01/2009
AWC6312R
HELP3TM PCS CDMA 3.4V/28dBm
Linear Power Amplier Module
Data Sheet - Rev 2.0
M9 Package
8 Pin 3 mm x 3 mm x 1 mm
Surface Mount Module
Figure 1: Block Diagram
FEATURES
• InGaP HBT Technology
• High Efciency:
40 % @ +28 dBm output
23 % @ +16 dBm output
• Low Quiescent Current: 8 mA
• Low Leakage Current in Shutdown Mode: <1 µA
• Internal Voltage Regulation (no need for DC/DC
Converter
• Optimized for a 50 Ω System
• Low Prole Miniature Surface Mount Package:
1 mm
• CDMA 1XRTT, 1xEV-DO Compliant
• RoHS-Compliant Package, 250 oC MSL-3
AWC6312R
APPLICATIONS
• CDMA/EVDO PCS-Band Wireless Handsets and
Data Devices
PRODUCT DESCRIPTION
The AWC6312R meets the increasing demands
for higher efciency and smaller footprint in CDMA
1X handsets. The AWC6312R uses ANADIGICS’
exclusive InGaP-Plus™ technology, which combines
HBT and pHEMT devices on the same die, to enable
state-of-the-art reliability, temperature stability, and
ruggedness. The AWC6312R is part of ANADIGICS’
High-Efficiency-at-Low-Power (HELP™) family of
CDMA power ampliers, which deliver low quiescent
currents and signicantly greater efciency without
a costly external DAC or DC-DC converter. Through
selectable bias modes, the AWC6312R achieves
optimal efficiency across different output power
levels, specically at low- and mid-range power levels
where the PA typically operates, thereby dramatically
increasing handset talk-time and standby-time. Its
built-in voltage regulator eliminates the need for
external voltage regulation components. The 3 mm x
3 mm x 1 mm surface mount package incorporates
matching networks optimized for output power,
efciency, and linearity in a 50 Ω system.
Bias Control
VBATT
VEN
RFIN RFOUT
GND
VMODE
1
7
5
8
6
GND at slug (pad)
3
4
2
VCC
GND
2Data Sheet - Rev 2.0
01/2009
AWC6312R
Figure 2: Pinout (X-ray Top View)
Table 1: Pin Description
VBATT
RFOUT
VEN
RFIN
VMODE
GND
VCC
GND
1
GND
2
8
7
GND
6
5
3
4
PIN NAME DESCRIPTION
1 VBATT Battery Voltage
2RFIN RF Input
3 VMODE Mode Control Voltage
4 VENABLE PA Enable Voltage
5GND Ground
6GND Ground
7RFOUT RF Output
8 VCC Supply Voltage
Data Sheet - Rev 2.0
01/2009
AWC6312R
3
ELECTRICAL CHARACTERISTICS
Table 2: Absolute Minimum and Maximum Ratings
Stresses in excess of the absolute ratings may cause permanent damage.
Functional operation is not implied under these conditions. Exposure
to absolute ratings for extended periods of time may adversely affect
reliability.
Table 3: Operating Ranges
The device may be operated safely over these conditions; however, parametric performance is guaranteed only
over the conditions dened in the electrical specications.
Notes:
(1) For operation at Vc c = +3.2 V, Po u t is derated by 0.5 dB.
PARAMETER MIN MAX UNIT
Supply Voltage (V
CC
and V
BATT
)0+5 V
Mode Control Voltage (V
MODE
)0+3.5 V
Enable Voltage (V
EN
)0+3.5 V
RF Input Power (P
IN
)-+10 dBm
Storage Temperature (T
STG
)-40 +150 °C
PARAMETER MIN TYP MAX UNIT COMMENTS
Operating Frequency (f) 1850 -1915 MHz
Supply Voltage (VCC and VBATT)+3.2 +3.4 +4.2 V POUT < 28.0 dBm
Enable Voltage (VEN)+2.2
0
+2.4
-
+3.1
+0.5 VPA "on"
PA "shut down"
Mode Control Voltage (VMODE)+2.2
0
+2.4
-
+3.1
+0.5 VLow Bias Mode
High Bias Mode
RF Output Power (POUT)27.5 (1) +28.0 -dBm
Case Temperature (TC)-30 -+85 °C
4Data Sheet - Rev 2.0
01/2009
AWC6312R
Table 4: Electrical Specications - CDMA Operation
(TC = +25 °C, VBATT = VCC = +3.4 V, VEN = +2.4 V, 50 Ω system, IS-95 uplink waveform)
Notes:
1. ACPRs and Efciency Limits at 1882.5 MHz only.
PARAMETER MIN TYP MAX UNIT COMMENTS
Gain 25
12
27
13.5
29
16 dB P
OUT
= +28 dBm, V
MODE1
= 0 V
P
OUT
= +16 dBm, V
MODE1
= +2.4 V
Adjacent Channel Power
at +1.25 MHz offset
Primary Channel BW = 1.23 MHz
Adjacent Channel BW = 30 kHz
-
-
-50
-55
-46.5
-47
dBc P
OUT
= +28 dBm, V
MODE1
= 0 V
P
OUT
= +16 dBm, V
MODE1
= +2.4 V
Adjacent Channel Power
at + 1.98 MHz offset
Primary Channel BW = 1.23 MHz
Adjacent Channel BW = 30 kHz
-
-
-58
-59
-54
-54 dBc P
OUT
= +28 dBm, V
MODE1
= 0 V
P
OUT
= +16 dBm, V
MODE1
= +2.4 V
Alternate Channel Power
at +2.25 MHz offset
Primary Channel BW = 1.23 MHz
Adjacent Channel BW = 30 kHz
-
-
-61
-62
-57
-57 dBc P
OUT
= +28 dBm, V
MODE1
= 0 V
P
OUT
= +16 dBm, V
MODE1
= +2.4 V
Power-Added Efficiency 37
20
40
23
-
-%P
OUT
= +28 dBm, V
MODE1
= 0 V
P
OUT
= +16 dBm, V
MODE1
= +2.4 V
Quiescent Current (Icq) - 8 13 mA through V
CC
pin, V
MODE1
= +2.4 V
Enable Current -0.3 0.8 mA through V
EN
pin, PA "on"
Mode Control Current -0.3 0.8 mA through V
MODE
pin, V
MODE1
= +2.4 V
Battery Current -2.5 5mA through V
BATT
pin, V
MODE1
= +2.4 V
Leakage Current -<1 5µA V
CC
= +4.2 V, V
EN
= 0 V,
V
MODE1
= 0 V
Noise in Receive Band
-
-
-
-135
-138
-142
-133
-135
-
dBm/Hz
dBm/Hz
dBm/Hz
1930 MHz to 1990 MHz, P
OUT
<
28dBm
1930 MHz to 1990 MHz, P
OUT
<
16 dBm
1575 + 1.023 MHz
Harmonics
2fo
3fo, 4fo
-
-
-41
-55
-30
-35 dBc
CW Measurement
V
MODE1
= 0V
Input Impedance - - 2:1 VSWR
Spurious Output Level
(all spurious outputs) - - -65 dBc
P
OUT
< +28 dBm
In-band load VSWR < 5:1
Out-of-band load VSWR < 10:1
Applies over all operating ranges
Load mismatch stress with no
permanent degradation or failure 8:1 - - VSWR Applies over full operating range
Data Sheet - Rev 2.0
01/2009
AWC6312R
5
APPLICATION INFORMATION
To ensure proper performance, refer to all related
Application Notes on the ANADIGICS web site:
http://www.anadigics.com
Shutdown Mode
The power amplier may be placed in a shutdown mode
by applying logic low levels (see Operating Ranges
table) to both the VENABLE and VMODE1 voltages.
Bias Modes
The power amplier may be placed in either a Low Bias
mode or a High Bias mode by applying the appropriate
Table 5: Bias Control
logic level (see Operating Ranges table) to the VMODE
pin. The Bias Control table lists the recommended
modes of operation for various applications.
Two operating modes are available to optimize current
consumption. High Bias/High Power operating mode
is for POUT levels > 16 dBm. At around 16 dBm output
power, the PA could be “Mode Switched” to Low power
mode for lowest quiescent current consumption.
Figure 3: Application Circuit
RF IN 2
1
6
7
8
5
4
3
V
ENABLE
RFIN
VMODE GND
GND
V
BATT VCC
RFOUT
VCC
VMODE
VBATT
C5
2.2µF
RF OUT
C2
0.01µF
C4
2.2 µF
VENABLE
C3
1000 pF
C6
15 pF
C1
1000 pF
GND
at slug
6Data Sheet - Rev 2.0
01/2009
AWC6312R
PACKAGE OUTLINE
Figure 4: M9 Package Outline - 8 Pin 3 mm x 3 mm x 1 mm Surface Mount Module
Figure 5: Branding Specication
6312R
LLLLNN
BBBBCC
Data Sheet - Rev 2.0
01/2009
AWC6312R
7
COMPONENT PACKAGING
Pin 1
Table 6: Tape & Reel Dimensions
Figure 6: Tape & Reel Packaging
PACKAGE TYPE TAPE WIDTH POCKET PITCH REEL CAPACITY MAX REEL DIA
3 mm x 3 mm x 1 mm 12 mm 4 mm 2500 7"
WARNING
ANADIGICS products are not intended for use in life support appliances, devices or systems. Use of an ANADIGICS product
in any such application without written consent is prohibited.
IMPORTANT NOTICE
ANADIGICS, Inc.
141 Mount Bethel Road
Warren, New Jersey 07059, U.S.A.
Tel: +1 (908) 668-5000
Fax: +1 (908) 668-5132
URL: http://www.anadigics.com
E-mail: Mktg@anadigics.com
ANADIGICS, Inc. reserves the right to make changes to its products or to discontinue any product at any time without notice.
The product specications contained in Advanced Product Information sheets and Preliminary Data Sheets are subject to
change prior to a product’s formal introduction. Information in Data Sheets have been carefully checked and are assumed
to be reliable; however, ANADIGICS assumes no responsibilities for inaccuracies. ANADIGICS strongly urges customers
to verify that the information they are using is current before placing orders.
Data Sheet - Rev 2.0
01/2009
8
AWC6312R
ORDERING INFORMATION
ORDER NUMBER TEMPERATURE
RANGE
PACKAGE
DESCRIPTION COMPONENT PACKAGING
AWC6312RM9Q7 -30 °C to +85 °C
RoHS Compliant 8 Pin
3mm x 3mm x 1mm
Surface Mount Module
Tape and Reel, 2500 pieces per Reel
AWC6312RM9P9 -30 °C to +85 °C
RoHS Compliant 8 Pin
3mm x 3mm x 1mm
Surface Mount Module
Partial Tape and Reel