NEC NPN SILICON TRANSISTOR ELECTRON DEVICE 2SC2 O 00 DESCRIPTION The 2SC2000 is designed for use in AM/RF stage of CAR RADIO j and general purpose applications. PACKAGE DIMENSIONS : in millimeters (inches) : FEATURES High Electrostatic-Discharge -Resistant (E-B reverse bias) 52 MAX ESDR 1: TYP. 500 V (C=1 000 pF) (0.204 MAX.) ESDR 2: TYP. 1600 V (C=100 pF} @ Low f7, Ce-ryy and NF. _ fr: TYP. 70 MHz (Vce =6.0 V, Ie =1.0 mA) 23 Ce'th'b: TYP.6.0 ps (Veg=6.0 V, Ie =-10 mA, i #=31.9 MHz) 3 NF: TYP. 3.0dB (VcE =6.0 V, Ic =1.0 mA, O45 : f= 1.0 MHz, Rg =500 2) TIC (0018) ZZ ABSOLUTE MAXIMUM RATINGS | fs 23 ag : . 254 lt U =o t i Maximum Temperatures (0.10) re Storage Temperature ..............2:. 5 to +150 C az Pm Ss _ Junction Temperature ............. +150 C Maximum xs Maximum Power Dissipation (Ta=25 C) 1 2 3 ; =3 Total Power Dissipation .................. 600 mW ws 2 Maximum Voltages and Currents (Ta= 25 C) 1. EMITTER Eas :sc-asa| 3 Vepo Collector to Base Voltage ............ 60 Vv 2.COLLECTOR JEDEC: TO-92 . 3. BASE tec : PA33 Vceo Collector to Emitter Voltage.......... 50 OV Vego Emitter to Base Voltage ............. 50 6 6V Ie Collector Current.................. 200 mA : Ip Base Current ..... 0.0... 0.20. c eee 20 mA 4 ELECTRICAL CHARACTERISTICS (Ta=25 C) SYMBOL CHARACTERISTIC MIN. TYP. MAX. UNIT TEST CONDITIONS hee DC Current Gain 40 90 180 - VcE =6.0 V, tc=1.0 mA Cob Output Capacitance 3.7 4.5 pF Vcp=6.0 V, Ile =0, f=1.0 MHz ft Gain Bandwidth Product 40 70 MHz Vce=6.0 V, Ip=-1.0 mA NF Noise Figure 3.0 de ace 500 04 pie ESDR Electrostatic-Discharge -Resistant 500 Vv See Test Circuit ICBO Collector Cutoff Current 100 nA Veg =60 V, ie=0 1EBO Emitter Cutoff Current 100 nA Vep=5.0 V, Ic=0 VBE Base to Emitter Voltage 600 650 700 mV Vce=6.0 V, lc=1.0 mA VCE(sat) Collector Saturation Voltage 110 300 mv i=100 mA, ip=10 mA VBE(sat) Base Saturation Voltage. 0.85 1.5 Vv I=100 mA, |g=10 mA Cethhb Coliector to Base Time Constant 6.0 15 ps Vcp=6.0 V, Ile=-10 mA f=31.9 MHz Classification of hee Rank M | L K Range 40 80 | 60-120 | 90~ 180 hee Test Conditions : Voce =6.0 V, Ic =1.0 mA