Semiconductor Components Industries, LLC, 2002
March, 2002 – Rev. 6 1Publication Order Number:
MUN5111T1/D
MUN5111T1 Series
Preferred Devices
Bias Resistor Transistor
PNP Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single
device and its external resistor bias network. The BRT (Bias Resistor
Transistor) contains a single transistor with a monolithic bias network
consisting of two resistors; a series base resistor and a base–emitter
resistor. The BRT eliminates these individual components by
integrating them into a single device. The use of a BRT can reduce
both system cost and board space. The device is housed in the
SC–70/SOT–323 package which is designed for low power surface
mount applications.
•Simplifies Circuit Design
•Reduces Board Space
•Reduces Component Count
•The SC–70/SOT–323 package can be soldered using wave or reflow.
The modified gull–winged leads absorb thermal stress during
soldering eliminating the possibility of damage to the die.
•Available in 8 mm embossed tape and reel
Use the Device Number to order the 7 inch/3000 unit reel.
Replace “T1” with “T3” in the Device Number to order
the 13 inch/10,000 unit reel.
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating Symbol Value Unit
Collector-Base Voltage VCBO 50 Vdc
Collector-Emitter Voltage VCEO 50 Vdc
Collector Current IC100 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation
TA = 25°C
Derate above 25°C
PD202 (Note 1)
310 (Note 2)
1.6 (Note 1)
2.5 (Note 2)
mW
°C/W
Thermal Resistance –
Junction-to-Ambient RθJA 618 (Note 1)
403 (Note 2) °C/W
Thermal Resistance –
Junction-to-Lead RθJL 280 (Note 1)
332 (Note 2) °C/W
Junction and Storage
Temperature Range TJ, Tstg –55 to +150 °C
1. FR–4 @ Minimum Pad
2. FR–4 @ 1.0 x 1.0 inch Pad
PNP SILICON
BIAS RESISTOR
TRANSISTORS
SC–70/SOT–323
CASE 419
STYLE 3
Preferred devices are recommended choices for future use
and best overall value.
3
2
1
PIN 3
COLLECTOR
(OUTPUT)
PIN 2
EMITTER
(GROUND)
PIN 1
BASE
(INPUT)
R1
R2
MARKING DIAGRAM
6x = Specific Device Code
x = (See Marking Table)
M = Date Code
6x M
DEVICE MARKING INFORMATION
See specific marking information in the device marking table
on page 2 of this data sheet.
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DEVICE MARKING AND RESISTOR VALUES
Device Package Marking R1 (K) R2 (K) Shipping
MUN5111T1 SC–70/SOT–323 6A 10 10 3000/Tape & Reel
MUN5112T1 SC–70/SOT–323 6B 22 22 3000/Tape & Reel
MUN5113T1
MUN5113T3 SC–70/SOT–323 6C 47 47 3000/Tape & Reel
10,000/Tape & Reel
MUN5114T1 SC–70/SOT–323 6D 10 47 3000/Tape & Reel
MUN5115T1 (Note 3) SC–70/SOT–323 6E 10 ∞3000/Tape & Reel
MUN5116T1 (Note 3) SC–70/SOT–323 6F 4.7 ∞3000/Tape & Reel
MUN5130T1 (Note 3) SC–70/SOT–323 6G 1.0 1.0 3000/Tape & Reel
MUN5131T1 (Note 3) SC–70/SOT–323 6H 2.2 2.2 3000/Tape & Reel
MUN5132T1 (Note 3) SC–70/SOT–323 6J 4.7 4.7 3000/Tape & Reel
MUN5133T1 (Note 3) SC–70/SOT–323 6K 4.7 47 3000/Tape & Reel
MUN5134T1 (Note 3) SC–70/SOT–323 6L 22 47 3000/Tape & Reel
MUN5135T1 (Note 3) SC–70/SOT–323 6M 2.2 47 3000/Tape & Reel
MUN5136T1 SC–70/SOT–323 6N 100 100 3000/Tape & Reel
MUN5137T1 SC–70/SOT–323 6P 47 22 3000/Tape & Reel
3. New devices. Updated curves to follow in subsequent data sheets.
MUN5111T1 Series
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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–Base Cutoff Current (VCB = 50 V, IE = 0) ICBO – – 100 nAdc
Collector–Emitter Cutoff Current (VCE = 50 V, IB = 0) ICEO – – 500 nAdc
Emitter–Base Cutoff Current MUN5111T1
(VEB = 6.0 V, IC = 0) MUN5112T1
MUN5113T1
MUN5114T1
MUN5115T1
MUN5116T1
MUN5130T1
MUN5131T1
MUN5132T1
MUN5133T1
MUN5134T1
MUN5135T1
MUN5136T1
MUN5137T1
IEBO –
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
0.5
0.2
0.1
0.2
0.9
1.9
4.3
2.3
1.5
0.18
0.13
0.2
0.05
0.13
mAdc
Collector–Base Breakdown Voltage (IC = 10 µA, IE = 0) V(BR)CBO 50 – – Vdc
Collector–Emitter Breakdown Voltage (Note 4)
(IC = 2.0 mA, IB = 0) V(BR)CEO 50 – – Vdc
ON CHARACTERISTICS (Note 4)
DC Current Gain MUN5111T1
(VCE = 10 V, IC = 5.0 mA) MUN5112T1
MUN5113T1
MUN5114T1
MUN5115T1
MUN5116T1
MUN5130T1
MUN5131T1
MUN5132T1
MUN5133T1
MUN5134T1
MUN5135T1
MUN5136T1
MUN5137T1
hFE 35
60
80
80
160
160
3.0
8.0
15
80
80
80
80
80
60
100
140
140
250
250
5.0
15
27
140
130
140
150
140
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Collector–Emitter Saturation Voltage (IC = 10 mA, IE = 0.3 mA)
(IC = 10 mA, IB = 5 mA) MUN5130T1/MUN5131T1
(IC = 10 mA, IB = 1 mA) MUN5115T1/MUN5116T1/
MUN5132T1/MUN5133T1/MUN5134T1
VCE(sat) – – 0.25 Vdc
Output Voltage (on)
(VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kΩ) MUN5111T1
MUN5112T1
MUN5114T1
MUN5115T1
MUN5116T1
MUN5130T1
MUN5131T1
MUN5132T1
MUN5133T1
MUN5134T1
MUN5135T1
(VCC = 5.0 V, VB = 3.5 V, RL = 1.0 kΩ) MUN5113T1
(VCC = 5.0 V, VB = 5.5 V, RL = 1.0 kΩ) MUN5136T1
(VCC = 5.0 V, VB = 4.0 V, RL = 1.0 kΩ) MUN5137T1
VOL –
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
Vdc
4. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%
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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Typ Max Unit
Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kΩ)
(VCC = 5.0 V, VB = 0.050 V, RL = 1.0 kΩ) MUN5130T1
(VCC = 5.0 V, VB = 0.25 V, RL = 1.0 kΩ) MUN5115T1
MUN5116T1
MUN5131T1
MUN5132T1
VOH 4.9 – – Vdc
Input Resistor MUN5111T1
MUN5112T1
MUN5113T1
MUN5114T1
MUN5115T1
MUN5116T1
MUN5130T1
MUN5131T1
MUN5132T1
MUN5133T1
MUN5134T1
MUN5135T1
MUN5136T1
MUN5137T1
R1 7.0
15.4
32.9
7.0
7.0
3.3
0.7
1.5
3.3
3.3
15.4
1.54
70
32.9
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
22
2.2
100
47
13
28.6
61.1
13
13
6.1
1.3
2.9
6.1
6.1
28.6
2.86
130
61.1
kΩ
Resistor Ratio MUN5111T1/MUN5112T1/MUN5113T1/
MUN5136T1
MUN5114T1
MUN5115T1/MUN5116T1
MUN5130T1/MUN5131T1/MUN5132T1
MUN5133T1
MUN5134T1
MUN5135T1
MUN5137T1
R1/R20.8
0.17
–
0.8
0.055
0.38
0.038
1.7
1.0
0.21
–
1.0
0.1
0.47
0.047
2.1
1.2
0.25
–
1.2
0.185
0.56
0.056
2.6
Figure 1. Derating Curve
250
200
150
100
50
0
-50 0 50 100 150
TA, AMBIENT TEMPERATURE (°C)
PD, POWER DISSIPATION (MILLIWATTS)
RθJA = 833°C/W
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TYPICAL ELECTRICAL CHARACTERISTICS – MUN5111T1
Vin, INPUT VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (mA) hFE, DC CURRENT GAIN (NORMALIZED)
Figure 2. VCE(sat) versus IC
100
10
1
0.1
0.01
0.001 0
Vin, INPUT VOLTAGE (VOLTS)
TA=-25°C
25°C
1 2 3 4 5 6 7 8 9 10
Figure 3. DC Current Gain
Figure 4. Output Capacitance Figure 5. Output Current versus Input Voltage
Figure 6. Input Voltage versus Output Current
0.01
20
IC, COLLECTOR CURRENT (mA)
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
0.1
1
0 40 50
1000
1 10 100
IC, COLLECTOR CURRENT (mA)
TA=75°C
-25°C
100
10
0
IC, COLLECTOR CURRENT (mA)
0.1
1
10
100
10 20 30 40 50
TA=-25°C
25°C
75°C
75°C
IC/IB = 10
50
010203040
4
3
1
2
VR, REVERSE BIAS VOLTAGE (VOLTS)
Cob , CAPACITANCE (pF)
0
TA=-25°C
25°C
75°C
25°C
VCE = 10 V
f = 1 MHz
lE = 0 V
TA = 25°C
VO = 5 V
VO = 0.2 V
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TYPICAL ELECTRICAL CHARACTERISTICS – MUN5112T1
Vin, INPUT VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (mA) hFE, DC CURRENT GAIN (NORMALIZED)
Figure 7. VCE(sat) versus ICFigure 8. DC Current Gain
1000
10
IC, COLLECTOR CURRENT (mA)
100
10
1100
Figure 9. Output Capacitance
IC, COLLECTOR CURRENT (mA)
0 10 20 30
VO = 0.2 V
TA=-25°C
75°C
100
10
1
0.1 40 50
Figure 10. Output Current versus Input Voltage
100
10
1
0.1
0.01
0.001 0 1 2 3 4
Vin, INPUT VOLTAGE (VOLTS)
5 6 7 8 9 10
Figure 11. Input Voltage versus Output Current
0.01
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
0.1
1
10
40
IC, COLLECTOR CURRENT (mA)
0 20 50
75°C
25°C
TA=-25°C
50
010203040
4
3
2
1
0
VR, REVERSE BIAS VOLTAGE (VOLTS)
Cob , CAPACITANCE (pF)
25°C
IC/IB = 10
25°C
-25°C
VCE = 10 V
TA=75°C
f = 1 MHz
lE = 0 V
TA = 25°C
75°C25°C
TA=-25°C
VO = 5 V
MUN5111T1 Series
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TYPICAL ELECTRICAL CHARACTERISTICS – MUN5113T1
Vin, INPUT VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (mA) hFE, DC CURRENT GAIN (NORMALIZED)
Figure 12. VCE(sat) versus IC
IC, COLLECTOR CURRENT (mA)
1
0.1
0.01 010203040
75°C
25°C
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
Figure 13. DC Current Gain
1000
100
10 1 10 100
IC, COLLECTOR CURRENT (mA)
-25°C
Figure 14. Output Capacitance Figure 15. Output Current versus Input Voltage
100
10
1
0.1
0.01
0.001 010
25°C
Vin, INPUT VOLTAGE (VOLTS)
-25°C
50
0 10203040
1
0.8
0.6
0.4
0.2
0
VR, REVERSE BIAS VOLTAGE (VOLTS)
Cob , CAPACITANCE (pF)
123456789
Figure 16. Input Voltage versus Output Current
100
10
1
0.1 0 10 20 30 40
IC, COLLECTOR CURRENT (mA)
TA=-25°C
25°C
75°C
50
IC/IB = 10
TA=-25°C25°C
TA=75°C
f = 1 MHz
lE = 0 V
TA = 25°C
VO = 5 V
TA=75°C
VO = 0.2 V
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TYPICAL ELECTRICAL CHARACTERISTICS – MUN5114T1
10
1
0.1 010 20 30 4050
100
10
10 246810
4.5
4
3.5
3
2.5
2
1.5
1
0.5
00 2 4 6 8101520253035404550
VR, REVERSE BIAS VOLTAGE (VOLTS)
Vin, INPUT VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (mA) hFE, DC CURRENT GAIN (NORMALIZED)
Figure 17. VCE(sat) versus IC
IC, COLLECTOR CURRENT (mA)
020406080
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
Figure 18. DC Current Gain
1 10 100
IC, COLLECTOR CURRENT (mA)
Figure 19. Output Capacitance Figure 20. Output Current versus Input Voltage
Vin, INPUT VOLTAGE (VOLTS)
Cob, CAPACITANCE (pF)
Figure 21. Input Voltage versus Output Current
IC, COLLECTOR CURRENT (mA)
1
0.1
0.01
0.001
-25°C
25°C
TA=75°C
VCE = 10 V
180
160
140
120
100
80
60
40
20
02 4 6 8 15 20 40 50 60 70 80 90
f = 1 MHz
lE = 0 V
TA = 25°C
LOAD
+12 V
Figure 22. Inexpensive, Unregulated Current Source
Typical Application
for PNP BRTs
25°C
IC/IB = 10 TA=-25°C
TA=75°C25°C
-25°C
VO = 5 V
VO = 0.2 V 25°C
TA=-25°C
75°C
75°C
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TYPICAL ELECTRICAL CHARACTERISTICS — MUN5132T1
–25°C
75°C25°C
–25°C
Figure 23. Maximum Collector Voltage versus
Collector Current Figure 24. DC Current Gain
Figure 25. Output Capacitance Figure 26. Output Current versus Input Voltage
Vin, INPUT VOLTAGE (VOLTS)VR, REVERSE BIAS VOLTAGE (VOLTS)
Figure 27. Input Voltage versus Output Current
IC, OUTPUT CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
1
0.1
35302520151050 IC, COLLECTOR CURRENT (mA) 120200
100
10
1
0.01
1000
VCE(sat), MAXIMUM COLLECTOR
VOLTAGE (VOLTS)
hFE, DC CURRENT GAIN
10
4
6050403020100
0
Cob, CAPACITANCE (pF)
1
2
5
7
100
6543210
0.01
1
10
IC, COLLECTOR CURRENT (mA)
10987
10
302520151050
0.1
1
454035 50
Vin, INPUT VOLTAGE (VOLTS)
75°C
25°C
75°C
25°C
75°C
25°C
40 60 80 100
3
6
8
9
0.1
–25°C
–25°C
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TYPICAL ELECTRICAL CHARACTERISTICS — MUN5136T1
75°C
25°C
–25°C
Figure 28. Maximum Collector Voltage versus
Collector Current Figure 29. DC Current Gain
Figure 30. Output Capacitance Figure 31. Output Current versus Input Voltage
Vin, INPUT VOLTAGE (VOLTS)VR, REVERSE BIAS VOLTAGE (VOLTS)
Figure 32. Input Voltage versus Output Current
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
1
0.1
76543210 IC, COLLECTOR CURRENT (mA) 100101
100
10
1
0.01
1000
VCE(sat), MAXIMUM COLLECTOR
VOLTAGE (VOLTS)
hFE, DC CURRENT GAIN (NORMALIZED)
1.2
0.6
6050403020100
0
Cob, CAPACITANCE (pF)
0.2
0.4
0.8
1.0
100
6543210
0.1
1
10
IC, COLLECTOR CURRENT (mA)
10987
100
121086420
1
10
181614 20
Vin, INPUT VOLTAGE (VOLTS)
IC/IB = 10
75°C
25°C
TA = –25°C
VCE = 10 V
75°C
25°C
TA = –25°C
VO = 5 V
VO = 0.2 V
75°C
25°CTA = –25°C
f = 1 MHz
IE = 0 V
TA = 25°C
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TYPICAL ELECTRICAL CHARACTERISTICS — MUN5137T1
Figure 33. Maximum Collector Voltage versus
Collector Current Figure 34. DC Current Gain
Figure 35. Output Capacitance Figure 36. Output Current versus Input Voltage
Vin, INPUT VOLTAGE (VOLTS)VR, REVERSE BIAS VOLTAGE (VOLTS)
Figure 37. Input Voltage versus Output Current
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
1
0.1
35302520151050 IC, COLLECTOR CURRENT (mA) 100101
100
10
0.01
1000
VCE(sat), MAXIMUM COLLECTOR
VOLTAGE (VOLTS)
hFE, DC CURRENT GAIN (NORMALIZED)
1.4
0.6
6050403020100
0
Cob, CAPACITANCE (pF)
0.2
0.4
0.8
1.0
100
6543210
0.001
1
10
IC, COLLECTOR CURRENT (mA)
11987
100
151050
1
10
20 25
Vin, INPUT VOLTAGE (VOLTS)
504540
0.1
0.01
10
1.2 f = 1 MHz
IE = 0 V
TA = 25°C
75°C
25°C
TA = –25°C
VO = 5 V
75°C
25°C
TA = –25°C
VO = 0.2 V
75°C
25°C
TA = –25°C
IC/IB = 10 VCE = 10 V
75°C
25°C
TA = –25°C
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PD = TJ(max) – TA
RθJA
PD = 150°C – 25°C
0.625°C/W = 200 milliwatts
•The soldering temperature and time should not exceed
260°C for more than 10 seconds.
•When shifting from preheating to soldering, the
maximum temperature gradient should be 5°C or less.
•After soldering has been completed, the device should
be allowed to cool naturally for at least three minutes.
Gradual cooling should be used as the use of forced
cooling will increase the temperature gradient and
result in latent failure due to mechanical stress.
•Mechanical stress or shock should not be applied dur-
ing cooling
* Soldering a device without preheating can cause exces-
sive thermal shock and stress which can result in damage
to the device.
INFORMATION FOR USING THE SC–70/SOT–323 SURFACE MOUNT PACKAGE
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS
Surface mount board layout is a critical portion of the total
design. The footprint for the semiconductor packages must
be the correct size to insure proper solder connection
SC–70/SOT–323 POWER DISSIPATION
The power dissipation of the SC–70/SOT–323 is a func-
tion of the pad size. This can vary from the minimum pad
size for soldering to the pad size given for maximum power
dissipation. Power dissipation for a surface mount device
is determined by TJ(max), the maximum rated junction tem-
perature of the die, RθJA, the thermal resistance from the
device junction to ambient; and the operating temperature,
TA. Using the values provided on the data sheet, PD can be
calculated as follows.
The values for the equation are found in the maximum
ratings table on the data sheet. Substituting these values into
the equation for an ambient temperature TA of 25°C, one
can calculate the power dissipation of the device which in
this case is 200 milliwatts.
The 0.625°C/W assumes the use of the recommended
footprint on a glass epoxy printed circuit board to achieve
a power dissipation of 200 milliwatts. Another alternative
would be to use a ceramic substrate or an aluminum core
board such as Thermal Clad. Using a board material such
as Thermal Clad, a higher power dissipation of 300 milli-
watts can be achieved using the same footprint.
interface between the board and the package. With the
correct pad geometry, the packages will self align when
subjected to a solder reflow process.
SOLDERING PRECAUTIONS
The melting temperature of solder is higher than the rated
temperature of the device. When the entire device is heated
to a high temperature, failure to complete soldering within
a short time could result in device failure. Therefore, the
following items should always be observed in order to
minimize the thermal stress to which the devices are
subjected.
•Always preheat the device.
•The delta temperature between the preheat and
soldering should be 100°C or less.*
•When preheating and soldering, the temperature of the
leads and the case must not exceed the maximum
temperature ratings as shown on the data sheet. When
using infrared heating with the reflow soldering
method, the difference should be a maximum of 10°C.
mm
inches
0.035
0.9
0.075
0.7
1.9
0.028
0.65
0.025
0.65
0.025
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STEP 1
PREHEAT
ZONE 1
RAMP"
STEP 2
VENT
SOAK"
STEP 3
HEATING
ZONES 2 & 5
RAMP"
STEP 4
HEATING
ZONES 3 & 6
SOAK"
STEP 5
HEATING
ZONES 4 & 7
SPIKE"
STEP 6
VENT
STEP 7
COOLING
200°C
150°C
100°C
50°C
TIME (3 TO 7 MINUTES TOTAL) TMAX
SOLDER IS LIQUID FOR
40 TO 80 SECONDS
(DEPENDING ON
MASS OF ASSEMBLY)
205° TO 219°C
PEAK AT
SOLDER JOINT
DESIRED CURVE FOR LOW
MASS ASSEMBLIES
100°C
150°C
160°C
140°C
Figure 38. Typical Solder Heating Profile
DESIRED CURVE FOR HIGH
MASS ASSEMBLIES
170°C
For any given circuit board, there will be a group of
control settings that will give the desired heat pattern. The
operator must set temperatures for several heating zones,
and a figure for belt speed. Taken together, these control
settings make up a heating “profile” for that particular
circuit board. On machines controlled by a computer, the
computer remembers these profiles from one operating
session t o the next. Figure 7 shows a typical heating profile
for use when soldering a surface mount device to a printed
circuit board. This profile will vary among soldering
systems but it is a good starting point. Factors that can
affect the profile include the type of soldering system in
use, density and types of components on the board, type of
solder used, and the type of board or substrate material
being used. This profile shows temperature versus time.
SOLDER STENCIL GUIDELINES
Prior to placing surface mount components onto a printed
circuit board, solder paste must be applied to the pads. A
solder stencil is required to screen the optimum amount of
solder paste onto the footprint. The stencil is made of brass
or stainless steel with a typical thickness of 0.008 inches.
The stencil opening size for the surface mounted package
should be the same as the pad size on the printed circuit
board, i.e., a 1:1 registration.
TYPICAL SOLDER HEATING PROFILE
The line on the graph shows the actual temperature that
might be experienced on the surface of a test board at or
near a central solder joint. The two profiles are based on a
high density and a low density board. The Vitronics
SMD310 convection/infrared reflow soldering system was
used to generate this profile. The type of solder used was
62/36/2 Tin Lead Silver with a melting point between
177–189°C. When this type of furnace is used for solder
reflow work, the circuit boards and solder joints tend to
heat first. The components on the board are then heated by
conduction. The circuit board, because i t has a lar ge surface
area, absorbs the thermal energy more efficiently, then
distributes this energy to the components. Because of this
effect, the main body of a component may be up to 30
degrees cooler than the adjacent solder joints.
MUN5111T1 Series
http://onsemi.com
14
PACKAGE DIMENSIONS
SC–70/SOT–323
CASE 419–04
ISSUE L
STYLE 3:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
CN
AL
D
G
SB
H
J
K
3
12
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.071 0.087 1.80 2.20
B0.045 0.053 1.15 1.35
C0.032 0.040 0.80 1.00
D0.012 0.016 0.30 0.40
G0.047 0.055 1.20 1.40
H0.000 0.004 0.00 0.10
J0.004 0.010 0.10 0.25
K0.017 REF 0.425 REF
L0.026 BSC 0.650 BSC
N0.028 REF 0.700 REF
S0.079 0.095 2.00 2.40
0.05 (0.002)
MUN5111T1 Series
http://onsemi.com
15
Notes
MUN5111T1 Series
http://onsemi.com
16
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