GHz TECHNOL OGY INC . R E SERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz R E C OMMENDS THA T BEFORE
THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS, THAT THE
PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
GHz Techn ology In c. 3000 Oakmead Village Drive, San t a Clar a, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120
TPR 400
400 Watts, 50 Volts, Pulsed
Avionics 1030 - 1090 MHz
GENERAL DESCRIPTION CASE OUTLINE
The TPR 400 is a high power COMMON BASE bipolar tr ansi st or. It is
designed for pulsed systems in the frequency band 1030-1090 MHz. The
device has gold thin-film metallization for proven highest MTTF. The
transi st or includes input pr ematch for broadband ca pability. Low thermal
resistance package reduces junction temperatur e, ext ends l i fe.
55CX, STYLE 1
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissi pat i on @ 25 C 875 Watts
o2
Maximum Voltage and Current
BVces Collector to Base Voltage 55 Volts
BVebo Emitter to Base Voltage 4.0 Volts
Ic Collector Current 30 Amps
Ma ximu m T empe r atu res
Storage Temperature - 65 to + 150 C
o
Operating Junction Temperature + 200 C
o
ELECTRICAL CHARACTERISTICS @ 25 C
O
SYMB O L CHARACTE RIST ICS TEST CONDITIONS MIN TY P MAX UNITS
Pout
Pin
Pg
ηc
VSWR
Power Out F = 1030-1090 MHz 400 Watts
Power Input Vcc = 50 Volts 75 Watts
Power Gai n 7.27 dB
Col lector Effici ency 40 %
Load Mismatch Toleran ce 20:1
PW = 10 µsec
DF = 1%
F = 1090 MHz
BVebo
BVces
hFE
θjc2
Emitter to Base Breakdown Ie = 20 mA 4.0 Volts
Collector to Emitter Breakdown Ic = 25 mA 55 Volts
DC - Current Gain Ic = 2.5 A, Vce = 5 V 10 100
Therma l Resis tance 0.2 C/W
o
Note 1: At rated output power and pulse con ditions
2: At rated pulse condition s
Issue B, February 1998
