SCHOTTKY BARRIER RECTIFIER
Surface Mount Power Package
Employs the Schottky Barrier principle in a large area
metal-to-silicon power diode. State-of-the-art geometry
features epitaxial construction with oxide passivation
and metal overlay contact. Ideally suited for low voltage,
high frequency rectification, or as free wheeling and
polarity protection diodes, in surface mount applications
where compact size and weight are critical to the
system.
FEATURES :
* Very Low Forward Voltage Drop
* Small Compact Surface Mountable Package
* Highly Stable Oxide Passivated Junction
* Guardring for Stress Protection
* Case : SMB Molded plastic
* Lead : Lead Formed for Surface Mount
* Polarity : Color band denotes cathode end
* Mounting position : Any
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
C ambient temperature unless otherwise specified
Hz, resistive or inductive load
For capacitive load, derate current by
SYMBOL VALUE UNIT
Maximum Repetitive Reverse Voltage VRRM 40 V
Maximum Working Peak Reverse Voltage VRWM 40 V
Maximum DC Blocking Voltage VDC 40 V
Maximum Average Rectified Forward Current (TL = 115°C) IF(AV) 1.0 A
Non-repetitive Peak Surge Current
(Surge applied at rated load conditions half wave, single phase) IFSM 40 A
Maximum Instantaneous Forward Voltage (Note 1)
(IF = 1.0 A, TJ = 25°C) VF0.60 V
Maximum Instantaneous Reverse Current (Note1) TJ = 25°C 1.0 mA
TJ = 100°C 10 mA
Thermal Resistance - Junction to Lead (TL = 25°C) RθJL 12 °C/W
Operating Junction Temperature TJ - 65 to +125 °C
Note: (1) Pulse Test : Pulse Width = 300µs Duty Cycle ≤ 2%
Page 1 of 2 Rev. 03 : November 9, 2005
RATING
IR
0.22 ±0.07
2.0 ±0.1
5.4 ±0.15
2.3 ±0.2
4.8 ±0.15
3.6 ±0.15
SMB (DO-214AA)
1.1 ±0.3
Dimensions in millimeter