CDD320
Diode-Diode Modules
Type
CDD320N08
CDD320N12
CDD320N14
CDD320N16
CDD320N18
VRRM
V
800
1200
1400
1600
1800
VRSM
V
900
1300
1500
1700
1900
Dimensions in mm (1mm=0.0394")
Symbol Test Conditions Maximum Ratings Unit
IFRMS
IFAVM TVJ=TVJM
TC=100oC; 180o sine 480
320 A
TVJ=45oC t=10ms (50Hz), sine
VR=0 t=8.3ms (60Hz), sine
TVJ=TVJM t=10ms(50Hz), sine
VR=0 t=8.3ms(60Hz), sine
11500
12200
9600
10200
A
IFSM
TVJ=45oC t=10ms (50Hz), sine
VR=0 t=8.3ms (60Hz), sine
TVJ=TVJM t=10ms(50Hz), sine
VR=0 t=8.3ms(60Hz), sine
662000
620000
460000
430000
A2s
TVJ
TVJM
Tstg
-40...+150
150
-40...+125
oC
VISOL 50/60Hz, RMS t=1min
IISOL<1mA t=1s 3000
3600 V~
MdMounting torque (M5)
Terminal connection torque (M8)
_
2.5-5/22-24
12-15/106-132 Nm/lb.in.
Weight 320 g
1
3
312
i2dt
Typical including screws
2
DEECorp.
http://store.iiic.cc/
CDD320
Diode-Diode Modules
ADVANTAGES
* Space and weight savings
* Simple mounting
* Improved temperature and power
cycling
* Reduced protection circuits
APPLICATIONS
* Supplies for DC power equipment
* DC supply for PWM inverter
* Field supply for DC motors
* Battery DC power supplies
Symbol Test Conditions Characteristic Values Unit
V
VFIF=600A; TVJ=25oC 1.2
VTO For power-loss calculations only 0.75 V
rT0.63 m
IRRM TVJ=TVJM; VR=VRRM 40 mA
TVJ=TVJM
per diode; DC current
per module
RthJC 0.129
0.065 K/W
per diode; DC current
per module
RthJK 0.169
0.0845 K/W
dSCreepage distance on surface 12.7 mm
dAStrike distance through air 9.6 mm
aMaximum allowable acceleration 50 m/s2
uC
QSTVJ=125oC; IF=400A; -di/dt=50A/us 760
IRM 275 A
FEATURES
* International standard package
* Direct copper bonded Al2O3-ceramic
base plate
* Planar passivated chips
* Isolation voltage 3600 V~
* UL registered, E 72873
DEECorp.
http://store.iiic.cc/
CDD320
Diode-Diode Modules
Fig. 3 Power dissipation versus
forward current and ambient
temperature (per diode)
Fig. 4 Single phase rectifier bridge:
Power dissipation versus direct
output current and ambient
temperature
R = resistive load
L = inductive load
Fig. 1 Surge overload current
IFSM: Crest value, t: duration Fig. 2 i2dt versus time (1-10 ms) Fig. 2a Maximum forward current
at case temperature
DEECorp.
http://store.iiic.cc/
CDD320
Diode-Diode Modules
Fig. 5 Three phase rectifier bridge:
Power dissipation versus direct
output current and ambient
temperature
Fig. 6 Transient thermal impedance
junction to case (per diode)
Fig. 7 Transient thermal impedance
junction to heatsink (per diode)
RthJK for various conduction angles d:
d RthJK (K/W)
DC 0.169
180oC0.171
120oC0.172
60oC0.172
30oC0.173
Constants for ZthJK calculation:
iR
thi (K/W) ti (s)
1 0.0035 0.0099
2 0.0165 0.168
3 0.1091 0.456
4 0.04 1.36
RthJC for various conduction angles d:
d RthJC (K/W)
DC 0.129
180oC0.131
120oC0.132
60oC0.132
30oC0.133
Constants for ZthJC calculation:
iR
thi (K/W) ti (s)
1 0.0035 0.0099
2 0.0165 0.168
3 0.1091 0.456
10-3 10-2 10-1 100101102
0.00
0.05
0.10
0.15
0.20
10-3 10-2 10-1 100101102
0.00
0.05
0.10
0.15
ts
ZthJK
K/W
ts
ZthJC
K/W
30°
DC
0
0
30°
DC
DEECorp.
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