VUB160-16NOX
S1
U1/
W1
M1/O1
~A6
~E6
~K6
M10/O10
W
10
U
10
S/T
10
3~ Rectifier Bridge + Brake Unit
Standard Rectifier Module
Part number
VUB160-16NOX
Backside: isolated
Features / Advantages: Applications: Package:
● Package with DCB ceramic base plate
● Improved temperature and power cycling
● Planar passivated chips
● Very low forward voltage drop
● Very low leakage current
● X2PT - 2nd generation Xtreme light Punch Through
● Rugged X2PT design results in:
- short circuit rated for 10 µsec.
- very low gate charge
- low EMI
- square RBSOA @ 2x Ic
● Thin wafer technology combined with X2PT design
results in a competitive low VCE(sat) and low
thermal resistance
● 3~ Rectifier with brake unit
for drive inverters
V2-Pack
● Industry standard outline
● RoHS compliant
● Soldering pins for PCB mounting
● Height: 17 mm
● Base plate: DCB ceramic
● Reduced weight
● Advanced power cycling
● Isolation Voltage: V~
3600
The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and
the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The
information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns
the specific application of your product, please contact your local sales office.
Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact your local sales office.
Should you intend to use the product in aviation, in health or life endangering or life support applications, please notify. For any such application we urgently recommend
- to perform joint risk and quality assessments;
- the conclusion of quality agreements;
- to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures.
Terms and Conditions of Usage
RRM
1600
I 180
FSM
1100
DAV
V=V
A
A
=
=
I
3~
Rectifier
CES
1200
Brake
Chopper
I 250
CE(sat)
1.7
C25
V= V
A
V
=
=
V
IXYS reserves the right to change limits, conditions and dimensions. 20170503eData according to IEC 60747and per semiconductor unless otherwise specified
© 2017 IXYS all rights reserved
VUB160-16NOX
V = V
kA²s
kA²s
kA²s
kA²s
Symbol
Definition
Ratings
typ.
max.
I
R
V
IA
V
F
1.16
R0.6 K/W
R
min.
180
V
RSM
V
100T = 25°C
VJ
T = °C
VJ
mA2V = V
R
T = 25°C
VJ
I = A
F
V
T = °C
C
90
P
tot
205 WT = 25°C
C
RK/W0.2
60
1600
max. non-repetitive reverse blocking voltage
reverse current
forward voltage drop
total power dissipation
Conditions
Unit
1.55
T = 25°C
VJ
125
V
F0
V0.81T = °C
VJ
150
r
F
4.4 mΩ
V1.09T = °C
VJ
I = A
F
V
60
1.59
I = A
F
180
I = A
F
180
threshold voltage
slope resistance for power loss calculation only
µA
125
V
RRM
V1600
max. repetitive reverse blocking voltage
T = 25°C
VJ
C
J
37
junction capacitance
V = V;400 T = 25°Cf = 1 MHz
RVJ
pF
I
FSM
t = 10 ms; (50 Hz), sine T = 45°C
VJ
max. forward surge current
T = °C
VJ
150
I²t T = 45°C
value for fusing
T = °C150
V = 0 V
R
V = 0 V
R
V = 0 V
V = 0 V
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
VJ
R
VJ
R
T = °C
VJ
150
1.10
1.19
4.37
4.25
kA
kA
A
kA
935
1.01
6.05
5.89
1600
DAV
d =rectangular ⅓
bridge output current
thermal resistance junction to case
thJC
thermal resistance case to heatsink
thCH
Rectifier
1700
IXYS reserves the right to change limits, conditions and dimensions. 20170503eData according to IEC 60747and per semiconductor unless otherwise specified
© 2017 IXYS all rights reserved
VUB160-16NOX
T = 125°C
V
CES
V1200
collector emitter voltage
collector emitter saturation voltage
T = 25°C
collector current
A
250
A
C
VJ
Symbol
Definition
Ratings
typ.
max.
min.
Conditions
Unit
175
V
V
CE(sat)
total power dissipation
695 W
collector emitter leakage current
7.5 V
turn-on delay time
220 ns
t
reverse bias safe operating area
A
V
GES
V±20
V
GEM
max. transient gate emitter voltage
T = °C
C
V
P
tot
gate emitter threshold voltage
RBSOA
450
±30
T = 125°C
T = 125°C
VJ
V
max. DC gate voltage
I
C25
I
C
T = 25°C
VJ
I = A; V = 15 V
C GE
T = 25°C
VJ
V
GE(th)
I
CES
I = mA; V = V
C GE CE
V = V ; V = 0 V
CE CES GE
I
GES
T = 25°C
VJ
gate emitter leakage current
V = ±20 V
GE
2.1
1.9
6.86
mA
0.1 mA
0.1
500
G(on)
total gate charge
V = V; V = 15 V; I = A
CE
Q
GE C
510 nC
t
t
t
E
E
d(on)
r
d(off)
f
on
off
100 ns
400 ns
220 ns
21.5 mJ
17 mJ
current rise time
turn-off delay time
current fall time
turn-on energy per pulse
turn-off energy per pulse
inductive load
V = V; I = A
V = ±15 V; R = Ω
CE C
GE G
V = ±15 V; R = Ω
GE G
V = V
CEK
1200
short circuit safe operating area
µs
SCSOA
10T = 125°C
VJ
V = V; V = ±15 V
CE GE
short circuit duration
t
short circuit current
I
SC
SC
R = Ω; non-repetitive
G
650 A
R
thJC
thermal resistance junction to case
0.10
K/W
V
RRM
V1200
max. repetitive reverse voltage
T = 25°C
VJ
T = 25°C
forward current
A
48
A
C
32
T = °C
C
I
F25
I
F
T = 25°C
forward voltage
V
2.75
V
VJ
1.60T = 125°C
VJ
V
F
I = A
F
T = 25°C
reverse current
mA
0.25
mA
VJ
1T = 125°C
VJ
I
RR RRM
T = 125°C
VJ
Q
I
t
rr
RM
rr
6µC
50 A
350 ns
reverse recovery charge
max. reverse recovery current
reverse recovery time
V =
-di /dt = A/µs
I = A
F
F
E
rec
2 mJ
reverse recovery energy
R
R
thJC
thermal resistance junction to case
0.9 K/W
V = V
T = 25°C
C
T = 25°C
VJ
T = 125°C
VJ
VJ
150
6
150
150
30
30
1.2
1.2
1.2
600
900
900
600
I
CM
1.7
R
thCH
thermal resistance case to heatsink
0.16
K/W
0.3
R
thCH
thermal resistance case to heatsink
K/W
Brake IGBT + Diode
Brake Diode
600 V
80
80
80
80
nA
V = V
CEK
1200
IXYS reserves the right to change limits, conditions and dimensions. 20170503eData according to IEC 60747and per semiconductor unless otherwise specified
© 2017 IXYS all rights reserved
VUB160-16NOX
Ratings
UL Date code Prod. Index
Part Number
yywwAA
Lot.No: xxxxxx
Data Matrix: Typ (1-19), DC+Prod.Index (20-25), FKT# (26-31)
leer (33), lfd.# (33-36)
Package
T
op
°C
M
D
Nm2.5
mounting torque
2
T
VJ
°C150
virtual junction temperature
-40
Weight g76
Symbol
Definition
typ.
max.
min.
Conditions
operation temperature
Unit
VV
t = 1 second
V
t = 1 minute
isolation voltage
mm
mm
6.0
12.0
d
Spp/App
creepage distance on surface | striking distance through air
d
Spb/Apb
terminal to backside
I
RMS
RMS current
100 A
per terminal
125-40
terminal to terminal
V2-Pack
Similar Part Package Voltage class
VUB160-16NOXT V2-Pack 1600
Delivery Mode Quantity Code No.Ordering Number Marking on ProductOrdering
50/60 Hz, RMS; I ≤ 1 mA
ISOL
VUB160-16NOX 521713Box 6VUB160-16NOXStandard
3600
ISOL
T
stg
°C125
storage temperature
-40
3000
threshold voltage
V0.81
mΩ
V
0 max
R
0 max
slope resistance *
3.2
1.1
13.8
1.31
8
Equivalent Circuits for Simulation
T =
VJ
I
V
0
R
0
Rectifier Brake
IGBT +
Brake
Diode
150 °C
* on die level
IXYS reserves the right to change limits, conditions and dimensions. 20170503eData according to IEC 60747and per semiconductor unless otherwise specified
© 2017 IXYS all rights reserved
VUB160-16NOX
Marking
Remarks:
EJOT PT® self-tapping screws of the dimension K25 are
recommended for the mechanical connection between module
and PCB. Choose the right length according to your board
thickness at a maximum depth of 6 mm of the module holes.
The recommended mounting torque is 1.5 Nm.
S1
U1/
W1
M1/O1
~A6
~E6
~K6
M10/O10
W
10
U
10
S/T
10
Outlines V2-Pack
IXYS reserves the right to change limits, conditions and dimensions. 20170503eData according to IEC 60747and per semiconductor unless otherwise specified
© 2017 IXYS all rights reserved
VUB160-16NOX
0.001 0.01 0.1 1
400
500
600
700
800
900
2 3 4 5 6 7 8 9 011
10
3
10
4
0 10 20 30 40 50 60 70
0
20
40
60
80
0 20 40 60 80 100 120 140 160
1 10 100 1000 10000
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0 25 50 75 100 125 150
0
20
40
60
80
100
120
140
50Hz, 80% V
RRM
0.0 0.5 1.0 1.5 2.0
0
50
100
150
2
00
T
VJ
= 45°C
T
VJ
= 150°C
T
VJ
= 45°C
T
VJ
= 150°C
T
VJ
= 125°C
T
VJ
= 25°C
I
2
t
[A
2
s]
I
FSM
[A]
t [s]
I
F
[
A]
VF[V] t [ms]
P
tot
[
W]
I
F(AV)M
[A] T
amb
[°C]
I
dAV
[A]
T
C
[°C]
t [s]
Z
thJC
[
K/W]
R
thA
:
0.1 K/W
0.3 K/W
0.6 K/W
1.0 K/W
1.5 K/W
2.5 K/W
DC =
1
0.5
0.4
0.33
0.17
0.08
Fig. 1 Forward current vs.
voltage drop per diode
Fig. 2 Surge overload current
vs. time per diode
Fig. 3 I
2
t vs. time per diode
Fig. 4 Power dissipation vs. forward current
and ambient temperature per diode
Fig. 5 Max. forward current vs.
case temperature per diode
Fig. 6 Transient thermal impedance junction to case vs. time per diode
DC =
1
0.5
0.4
0.33
0.17
0.08
Constants for Z
thJC
calculation:
i R
th
(K/W) t
i
(s)
1 0.040 0.004
2 0.003 0.010
3 0.140 0.030
4 0.120 0.300
5 0.197 0.080
Rectifier
IXYS reserves the right to change limits, conditions and dimensions. 20170503eData according to IEC 60747and per semiconductor unless otherwise specified
© 2017 IXYS all rights reserved
VUB160-16NOX
0.001 0.01 0.1 1 10
0.01
0.1
1
0.0 0.5 1.0 1.5 2.0 2.5
0
10
20
30
40
50
60
6 7 8 9 10 11 12 13
0
100
200
300
I
C
[A]
t
[ns]
V
F
[V]
t [s]
Z
thJC
[K/W]
Fig.2 Typ. output characteristics
IGBT
Fig. 3 Typ. transfer charact.
IGBT
Fig. 6 Typ. forward characteristics
Diode
Fig. 9 Transient thermal
resistance junction to case
0.0 0.5 1.0 1.5 2.0 2.5 3.0
0
100
200
300
I
C
[A]
V
CE
[V]
Fig.1 Output characteristics IGBT
0 1 2 3 4
0
100
200
300
I
C
[A]
V
CE
[V] V
GE
[V]
0 4 8 12 16 20 24
0.0
0.5
1.0
1.5
2.0
2.5
0
25
50
75
100
125
0 10 20 30 40 50 60
0
20
40
60
80
0
2
4
6
8
I
F
[A]
I
rr
E
rec
E
rec
[mJ]
R
G
[]
Fig. 7 Typ. reverse recovery
c
h
a
r
a
c
t
e
r
i
s
t
i
c
s
D
i
o
d
e
Fig. 8 Typ. reverse recovery
characteristics Diode
0 100 200 300
0
10
20
30
40
0
200
400
600
800
E
off
[mJ]
I
C
[A]
Fig. 5 Typ. turn-off energy & switch.
times vs. collector current
0 100 200 300
0
100
200
300
400
0
20
40
60
80
E
on
[
mJ]
I
C
[A]
t
d(on)
E
on
Fig. 4 Typ. turn-on energy & switch.
times vs. collector current
t
r
t
r
[ns]
E
rec
[
mJ]
I
rr
[A] I
rr
[A]
25°C
125°C
9 V
11 V
13 V
25°C
125°C
E
off
t
f
t
d(off)
I
F
[A]
25°C
125°C
E
rec
I
rr
V
CE
= 20 V
V
GE
= 19 V
17 V
15 V
T
VJ
= 125°C
V
R
= 600 V
I
F
= 30 A
Diode
IGBT
T
VJ
= 125°C
R
G
= 1.2
V
R
= 600 V
T
VJ
= 125°C
V
GE
= 15 V
R
G
= 1.2
V
CE
= 600 V
V
GE
= ±15 V
T
VJ
= 125°C
R
G
= 1.2
V
CE
= 600 V
V
GE
= ±15 V
T
VJ
= 125°C
Diode
R
i
t
i
0.092 0.002
0.067 0.030
0.155 0.030
0.086 0.080
IGBT
R
i
t
i
0.020 0.006
0.003 0.007
0.040 0.030
0.097 0.250
Brake IGBT + Diode
IXYS reserves the right to change limits, conditions and dimensions. 20170503eData according to IEC 60747and per semiconductor unless otherwise specified
© 2017 IXYS all rights reserved
