DATA SH EET
Product specification
Supersedes data of 1998 Jul 09 1998 Oct 21
DISCRETE SEMICONDUCTORS
BFG480W
NPN wideband transistor
M3D124
1998 Oct 21 2
NXP Semiconductors Product specification
NPN wideband transistor BFG480W
FEATURES
High power gain
High efficiency
Low noise figure
High transition frequency
Emitter is thermal lead
Low feedback capacitance
Linear and non-linear oper ation.
APPLICATIONS
RF front end with high linearity system dema nds
(CDMA)
Common emitter class AB driver.
DESCRIPTION
NPN double polysilicon wideband transistor with buried
layer for low voltage applications in a 4-pin dual-emitter
SOT343R plastic package.
PINNING
PIN DESCRIPTION
1emitter
2base
3emitter
4 collector
Fig.1 Simplified outline SOT343R.
Marking code: P6.
handbook, halfpage
Top view
MSB842
21
43
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
VCEO collector-emitter voltage open base 4.5 V
ICcollector current (DC) 80 250 mA
Ptot total power dissipation Ts60 C360 mW
fTtransition frequenc y IC=80mA; V
CE = 2 V; f = 2 GHz; Tamb =25C21 GHz
Gmax maximum gain IC=80mA; V
CE = 2 V; f = 2 GHz; Tamb =25C16 dB
F noise figure IC=8mA; V
CE = 2 V; f = 2 GHz; S=opt 1.8 dB
Gppower gain Pulsed; class-AB; <1:2; t
p=5ms;
VCE = 3.6 V; f = 2 GHz; PL=100mW 13.5 dB
Ccollector efficiency Pulsed; class-AB; <1:2; t
p=5ms;
VCE = 3.6 V; f = 2 GHz; PL=100mW 45 %
CAUTION
This product is supplied in anti-s tatic packing to prevent damage caused by electros tatic discharge during transport
and handling.
1998 Oct 21 3
NXP Semiconductors Product specification
NPN wideband transistor BFG480W
LIMITING VALUES
In accordance with the Absolute Maximum Ra ting System (I EC 134).
Note
1. Ts is the temperature at the sold ering point of the emitter pins.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base volta ge open emitter 14.5 V
VCEO collector-emitter voltage open base 4.5 V
VEBO emitter-base voltage open collector 1V
ICcollector current (DC) 250 mA
Ptot total power dissipation Ts60 C; note 1; see Fig.2 360 mW
Tstg storage temperature 65 +150 C
Tjoperating junction temperature 150 C
Fig.2 Power derating curve.
handbook, halfpage
0 40 80 160
500
0
400
MGR623
Ts (°C)
Ptot
(mW)
120
300
200
100
THERMAL CHARACTE RISTI CS
SYMBOL PARAMETER VALUE UNIT
Rth j-s thermal resistance from junction to soldering point 250 K/W
1998 Oct 21 4
NXP Semiconductors Product specification
NPN wideband transistor BFG480W
CHARACTERISTICS
Tj=25C unless otherwise specified.
Notes
1. Gmax is the maximum power gain, if K > 1. If K < 1 then Gmax =MSG; seeFigs6,7and8.
2. ZS is optimized for noise; ZL is optimized for gain.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V(BR)CBO collector-base breakdown vo ltage IC=50A; IE=0 14.5 V
V(BR)CEO collector-emitter breakd own voltage IC=5mA; I
B=0 4.5 V
V(BR)EBO emitter-base break down voltage IE=100A; IC=0 1 V
ICBO collector-base leakage current VCE =5V; V
BE =0 70 nA
hFE DC current gain IC=80mA; V
CE = 2 V; see Fig.3 40 60 100
Cccollector capacitance IE=i
e=0; V
CB =2V; f=1MHz 1.4 pF
Ceemitter capacita nce IC=i
c=0; V
EB =0.5V; f=1MHz 2.2 pF
Cre feedback ca pacitance IC=0; V
CB = 2 V; f = 1 MHz;
see Fig.4 340 fF
fTtransition frequenc y IC=80mA; V
CE =2V; f=2GHz;
Tamb =25C; see Fig.5 21 GHz
Gmax maximum power gain; note 1 IC=80mA; V
CE =2V; f=2GHz;
Tamb =25C; seeFigs7and8 16 dB
insertion power gain IC=80mA; V
CE =2V; f=2GHz;
Tamb =25C; see Fig.8 12 dB
F noise figure IC=8mA; V
CE = 2 V; f = 900 MHz;
S=opt; see Fig.13 1.2 dB
IC=8mA; V
CE =2V; f=2GHz;
S=opt; see Fig.13 1.8 dB
PL1 output power at 1 dB gain
compression Class-AB; <1:2; t
p=5ms;
VCE =3.6V; I
CQ =1mA; f=2GHz 20 dBm
ITO third order inte rc ept point IC=80mA; V
CE =2V; f=2GHz;
ZS=Z
Sopt
; ZL=Z
Lopt
; note 2 28 dBm
S21 2
1998 Oct 21 5
NXP Semiconductors Product specification
NPN wideband transistor BFG480W
Fig.3 DC current gain as a fu nc tion of collector
current; ty pical values.
VCE =2V.
handbook, halfpage
0 50 100 150
100
0
80
MGR624
IC (mA)
hFE
60
40
20
IC=0; f=1MHz.
Fig.4 Feedback capacitance as a function of
collector-base voltage; typical valu es.
handbook, halfpage
0
800
400
600
200
015
MGR625
234
VCB (V)
Cre
(fF)
Fig.5 Transition frequency as a function of
collector current; typical values.
f=2GHz; V
CE =2V; T
amb =25C.
handbook, halfpage
30
20
10
0
MGR626
10 102103
IC (mA)
fT
(GHz)
f=900MHz; V
CE =2V.
Fig.6 Gain as a function of collec t or current;
typical values.
handbook, halfpage
0 40 80 160
30
10
0
20
MGR627
120 IC (mA)
gain
(dB) MSG
S21
Gmax
1998 Oct 21 6
NXP Semiconductors Product specification
NPN wideband transistor BFG480W
VCE =2V; f=2GHz.
Fig.7 Gain as a function of collec t or current;
typical values.
handbook, halfpage
0 40 80 160
20
0
16
MGR628
IC (mA)
gain
(dB)
120
12
8
4
S21
Gmax
IC=80mA; V
CE =2V.
Fig.8 Gain as a function of frequency;
typical values.
handbook, halfpage
50
010 102103104
MGR629
10
20
30
40
gain
(dB)
f (MHz)
MSG
S21
Gmax
1998 Oct 21 7
NXP Semiconductors Product specification
NPN wideband transistor BFG480W
Fig.9 Common emitter input reflection coefficient (S11); typical values.
IC=80mA; V
CE =2V; Z
o=50
handbook, full pagewidth
MGR630
0
0.2
0.6
0.4
0.8
1.0
1.0
5
2
1
0.5
0.2
0
0.2
0.5
1
2
5
0.2 0.5 1 2 5
180°
−135°
−90°
−45°
0°
45°
90°
135°
40 MHz
3 GHz
Fig.10 Common emitter forward transmission coeffici ent (S21); typical values.
IC=80mA; V
CE =2V.
handbook, full pagewidth
MGR631
25 20 15 10 5
180°
−135°
−90°
−45°
0°
45°
90°
135°
40 MHz
3 GHz
1998 Oct 21 8
NXP Semiconductors Product specification
NPN wideband transistor BFG480W
IC=80mA; V
CE =2V.
Fig.11 Common emitter reverse transmission coefficient (S12); typical values.
handbook, full pagewidth
MGR632
0.5 0.4 0.3 0.2 0.1
180°
−135°
−90°
−45°
0°
45°
90°
135°
40 MHz
3 GHz
Fig.12 Common emitter output reflection coefficient (S22); typical values.
IC=80mA; V
CE =2V; Z
o=50
handbook, full pagewidth
MGR633
0
0.2
0.6
0.4
0.8
1.0
1.0
5
2
1
0.5
0.2
0
0.2
0.5
1
2
5
0.2 0.5 1 2 5
180°
−135°
−90°
−45°
0°
45°
90°
135°
40 MHz
3 GHz
1998 Oct 21 9
NXP Semiconductors Product specification
NPN wideband transistor BFG480W
Noise data
VCE = 2 V; typical values.
f
(MHz) IC
(mA) Fmin
(dB) mag angle rn
()
900 2 1.1 0.41 96.1 0.21
4 1.1 0.31 106.6 0.14
6 1.2 0.27 118.4 0.12
8 1.2 0.26 131.7 0.10
10 1.3 0.28 143.2 0.10
20 1.6 0.39 166.2 0.07
40 2.0 0.49 176.0 0.07
60 2.3 0.57 179.5 0.07
80 2.9 0.45 177.3 0.18
2000 2 2.4 0.57 171.9 0.09
4 2.0 0.49 178.9 0.08
61.80.46175.7 0.09
81.80.44171.7 0.09
10 1.8 0.43 168.4 0.09
12 1.8 0.44 165.3 0.10
14 1.8 0.44 163.7 0.10
20 1.9 0.46 158.3 0.11
40 2.3 0.52 150.2 0.14
60 2.6 0.56 147.7 0.18
80 2.8 0.60 146.1 0.22
Fig.13 Minimum noise figure as a function of
collector current; typical values.
VCE =2V.
handbook, halfpage
02040 80
4
3
1
0
2
MGR634
IC (mA)
Fmin
(dB)
60
900 MHz
2 GHz
APPLICATION INFORMATION
RF performance at Ts60 C in a common emitter test circuit (see Figs 18 and 19).
MODE OF OPERATION f
(GHz) VCE
(V) ICQ
(mA) PL
(mW) Gp
(dB) C
(%)
Pulsed; class-AB; <1:2; t
p= 5 ms 2 3.6 1 100 typ. 13.5 typ. 45
1998 Oct 21 10
NXP Semiconductors Product specification
NPN wideband transistor BFG480W
Fig.14 Power gain and collector efficiency as a
function of load power; typica l v alues.
Pulsed, class-AB operation; <1;2; t
p=5ms.
f=2GHz; V
CE = 2.4 V; ICQ = 1 mA; tuned at PL=100mW.
handbook, halfpage
10 14 18 26
16
12
4
0
8
MGR635
PL (dBm)
Gp
(dB) Gp
80
60
20
0
40
22
ηC
(%)
ηC
Fig.15 Power gain and collector efficiency as a
function of load power; typica l v alues.
Pulsed, class-AB operation; <1;2; t
p=5ms.
f=2GHz; V
CE = 3.6 V; ICQ = 1 mA; tuned at PL=100mW.
handbook, halfpage
10 14 18 26
16
12
4
0
8
MGR636
PL (dBm)
Gp
(dB) Gp
80
60
20
0
40
22
ηC
(%)
ηC
Fig.16 Input impe da n ce as function of frequenc y
(series components); typical values.
VCE =3.6V; I
CQ =1mA; P
L=100mW; T
s60 C.
handbook, halfpage
1.8 1.85 1.9 2
10
0
8
MGR637
1.95
6
4
2
Zi
(Ω)
f (GHz)
ri
xi
Fig.17 Load impedanc e as a function of frequency
(series components); typical values.
VCE =3.6V; I
CQ =1mA; P
L=100mW; T
s60 C.
handbook, halfpage
1.8 1.85 1.9 2
30
0
MGR638
1.95
20
10
ZL
(Ω)
f (GHz)
RL
XL
1998 Oct 21 11
NXP Semiconductors Product specification
NPN wideband transistor BFG480W
Fig.18 Common emitter test circuit for class -AB op eration at 2 GHz.
handbook, full pagewidth
MGM221
VCVS
R1
TR1
L1
L4
L5
C4
C2
DUT
R2
C3
C1
RF input
50 Ω
RF output
50 Ω
L2
L3
C6
R3 C7
C5
List of components used in test circuit (see Figs 18 and 19)
Notes
1. American Technical Ceramics type 100A or capa citor of same quality.
2. The striplines ar e on a double copper-clad printed-circui t boa rd w i th PTFE fibre-glass dielectric (r=6.15,
tan = 0.0019); thickness 0.64 mm, copper cladding = 35 m.
COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE No.
C1, C5 multilayer ceramic chip capacitor; note 1 24 pF
C2, C4 multilayer ceramic chip capacitor; note 1 2 pF
C3, C6 multilayer ceramic chip capacitor, note 1 15 pF
C7 multilayer ceramic chip capacitor; note 1 1 nF
L1, L4 stripline; note 2 100 18 x 0.2 mm
L2 stripline; note 2 50 5x0.8mm
L3 stripline; note 2 50 6x0.8mm
L5 Grade 4S2 Ferro xc ube chip bead 4330 030 36300
R1 metal film resistor 220 ; 0.4 W
R2, R3 metal film resistor 10 ; 0.4 W
TR1 NPN transistor BC817 9335 895 20215
1998 Oct 21 12
NXP Semiconductors Product specification
NPN wideband transistor BFG480W
Fig.19 Printed-circuit board and compo ne nt layout for 2 GHz class-AB test circuit in Fig.18.
Dimensions in mm.
The components are situated on one side of the copper-clad PTFE fibre-glass board, the other side is unetched and serves as a ground plane.
Earth connections from the component side to the ground plane are made by through metallization.
handbook, full pagewidth
MBK827
45
35
C4
C6
C7R3
R2
R1
TR1
C5
L3
L4
L5
output
C2
L1
L2
input
C1
C3
DUT
VCVS
1998 Oct 21 13
NXP Semiconductors Product specification
NPN wideband transistor BFG480W
PACKAGE OUTLINE
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC EIAJ
SOT343R
D
A
A1
Lp
Q
detail X
c
HE
E
vMA
AB
0 1 2 mm
scale
X
21
43
Plastic surface-mounted package; reverse pinning; 4 leads SOT343R
wMB
97-05-21
06-03-16
bp
UNIT A1
max bpcD E
b1HELpQwv
mm 0.1
1.1
0.8 0.4
0.3 0.25
0.10
0.7
0.5 2.2
1.8 1.35
1.15
e
2.2
2.0
1.3
e1
0.2
y
0.10.21.15
DIMENSIONS (mm are the original dimensions)
0.45
0.15 0.23
0.13
e1
A
e
y
b1
1998 Oct 21 14
NXP Semiconductors Product specification
NPN wideband transistor BFG480W
DATA SHEET STATUS
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The produc t status of devi ce(s) described in this document may have changed since this docu ment was published
and may differ in case of multiple devices. The latest product status information is available on th e Internet at
URL http://www.nxp.com.
DOCUMENT
STATUS(1) PRODUCT
STATUS(2) DEFINITION
Objective data sheet Development This document contains data from the objective specification for produc t
development.
Preliminary data sheet Qualification This document contains data from the preliminary specification.
Product data sheet Production This document contains the pr oduct specification.
DEFINITIONS
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provided in a Product data she et shall define the
specification of the product as agreed between NXP
Semiconductors and its custo m er, unless NXP
Semiconductors and cus to mer have explicitly agreed
otherwise in writing. In no event however, shall an
agreement be valid in which th e NXP Semiconductors
product is deemed to offer functions and qualities beyond
those described in the Product data sheet.
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reserves the right to make changes to information
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Applications Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
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Customers are responsible for the design and operation of
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party customer(s). Customers should provide appropriate
design and opera ting safeguards to minimi ze the ris ks
associated with their ap plications and pr oducts.
1998 Oct 21 15
NXP Semiconductors Product specification
NPN wideband transistor BFG480W
NXP Semiconductors does not accept any liability related
to any default, damage, cost s or problem which is based
on any weakness or default in the customer’s applications
or products, or the applic ation or use by customer’s third
party customer(s). Customer is responsible for doing all
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customer(s). NXP does not accept any liability in this
respect.
Limiting values Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) will cause permanent damage to
the device. Limiting values are stress ra tings only and
(proper) operat ion of the device at these or any other
conditions above those given in the Recommende d
operating conditions section (if present) or the
Characteristics sections of this document is not warranted.
Constant or repeated exposure to limiting values will
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reliability of the device.
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Semiconductors products are sold subject to the genera l
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Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
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Printed in The Netherlands R77/03/pp16 Date of release: 1998 Oct 21
