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ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. FODM217 Series Single Channel, DC Sensing Input, Phototransistor Optocoupler In Half-Pitch Mini-Flat 4-Pin Package www.onsemi.com The FODM217 Series single channel, DC sensing input, optocoupler consists of one gallium arsenide (GaAs) infrared light emitting diode optically coupled to one phototransistor, in a compact, half-pitch, mini-flat, 4-pin package. The input-output isolation voltage, VISO, is rated at 3,750 VACRMS. Features * Current Transfer Ratio Ranges from 80 to 600% at IF = 5 mA, VCE = 5 V, TA = 25C - FODM217A - 80 to 160% - FODM217B - 130 to 260% - FODM217C - 200 to 400% - FODM217D - 300 to 600% * Safety and Regulatory Approvals: - UL1577, 3750 VACRMS for 1 min - DIN EN/IEC60747-5-5, 565 V Peak Working Insulation Voltage * Applicable to Infrared Ray Reflow, 260C SOP 4 PINS MARKING DIAGRAM Typical Applications * * * * * Primarily Suited for DC-DC Converters For Ground Loop Isolation, Signal to Noise Isolation Communications - Adapters, Chargers Consumer - Appliances, Set Top Boxes Industrial - Power Supplies, Motor Control, Programmable Logic Control 1. 2. 3. 4. 5. 6. F = Corporate Logo 217x = Device Number V = DIN EN/IEC60747-5-5 Option X = One-Digit Year Code YY = Digit Work Week R1 = Assembly Package Code PIN CONNECTIONS ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 9 of this data sheet. (c) Semiconductor Components Industries, LLC, 2016 January 2017 - Rev. P0 1 Publication Order Number: FODM217/D FODM217 Series SAFETY AND INSULATIONS RATING As per DIN EN/IEC 60747-5-5, this optocoupler is suitable for "safe electrical insulation" only within the safety limit data. Compliance with the safety ratings shall be ensured by means of protective circuits. Parameter Characteristics Installation Classifications per DIN VDE 0110/1.89 Table 1, For Rated Mains Voltage < 150 VRMS I-IV < 300 VRMS I-III Climatic Classification 55/110/21 Pollution Degree (DIN VDE 0110/1.89) 2 Comparative Tracking Index Symbol 175 Value Unit Input-to-Output Test Voltage, Method A, VIORM x 1.6 = VPR, Type and Sample Test with tm = 10 s, Partial Discharge < 5 pC 904 Vpeak Input-to-Output Test Voltage, Method B, VIORM x 1.875 = VPR, 100% Production Test with tm = 1 s, Partial Discharge < 5 pC 1060 Vpeak VIORM Maximum Working Insulation Voltage 565 Vpeak VIOTM Highest Allowable Over-Voltage 4,000 Vpeak External Creepage 5 mm External Clearance 5 mm VPR Parameter DTI Distance Through Insulation (Insulation Thickness) 0.4 mm TS Case Temperature (Note 1) 150 C Input Current (Note 1) 200 mA Output Power (Note 1) 300 mW > 109 IS,INPUT PS,OUTPUT RIO Insulation Resistance at TS, VIO = 500 V (Note 1) 1. Safety limit values - maximum values allowed in the event of a failure. www.onsemi.com 2 FODM217 Series ABSOLUTE MAXIMUM RATINGS (Note 2) TA = 25C unless otherwise specified. Symbol Parameter Value Units TSTG Storage Temperature -55 to +150 C TOPR Operating Temperature -55 to +110 C Junction Temperature -55 to +125 C 260 for 10 sec C TJ TSOL Lead Solder Temperature (Refer to Reflow Temperature Profile) Emitter IF(average) 50 mA Peak Forward Current (1 s pulse, 300 pps) 1 A Reverse Input Voltage 6 V Power Dissipation (Note 3) 70 mW Continuous Collector Current 50 mA VCEO Collector-Emitter Voltage 80 V VECO Emitter-Collector Voltage 7 V IF(peak) VR PDLED Continuous Forward Current Detector IC(average) P DC Collector Power Dissipation (Note 3) 150 mW 2. Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 3. Functional operation under these conditions is not implied. Permanent damage may occur if the device is subjected to conditions outside these ratings. www.onsemi.com 3 FODM217 Series TA = 25C unless otherwise specified Symbol Parameter Conditions Min. Typ. Max. Units 1.4 V 10 A 250 pF Emitter VF Forward Voltage IF = 20 mA IR Reverse Current VR = 4 V CT Terminal Capacitance V = 0 V, f = 1 kHz 1.2 30 Detector BVCEO BVECO ICEO Collector-Emitter Breakdown Voltage Emitter-Collector Breakdown Voltage Collector Dark Current IC = 0.1 mA, IF = 0 mA 80 V IE = 10 A, IF = 0 mA 7 V VCE = 50 V, IF = 0 mA 100 nA TRANSFER CHARACTERISTICS TA=25C unless otherwise specified Symbol Parameter Device CTRCE Current Transfer Ratio (collector-emitter) Conditions FODM217A IC Collector Current CTR(SAT) Saturated Current Transfer Ratio Collector Current IC(SAT) VCE(SAT) Collector-Emitter Saturation Voltage Min. Typ. Max. 80 160 130 260 FODM217C 200 400 FODM217D 300 600 4 30 FODM217B IF = 5 mA, VCE = 5 V Units % All IF = 5 mA, VCE = 5 V All IF = 8 mA, VCE = 0.4 V 60 % All IF = 8 mA, VCE = 0.4 V 4.8 mA All IF = 8 mA, IC = 2.4 mA mA 0.4 V Max. Units SWITCHING CHARACTERISTICS TA=25C unless otherwise specified Symbol tON Parameter Conditions Min. IC = 2 mA, VCE = 10 V, Turn On Time Typ. 3 s 3 s 2 s 3 s RL = 100 tOFF tR IC = 2 mA, VCE = 10 V, Turn Off Time RL = 100 Output Rise Time (10% -90%) IC = 2 mA, VCE = 10 V, RL = 100 tF Output Fall Time (90% -10%) IC = 2 mA, VCE = 10 V, RL = 100 ISOLATION CHARACTERISTICS Symbol Parameter VISO Input-Output Isolation Voltage RISO Isolation Resistance CISO Isolation Capacitance Conditions Min. Freq = 60 Hz, t = 1.0 min, II-O 10 A (Note 4,5) 3,750 VI-O = 500 V (Note 4) Frequency = 1 MHz Typ. Units VACRMS 5 x 1010 0.6 4. Device is considered a two terminal device: Pin 1 and 2 are shorted together and Pins 3 and 4 are shorted together. 5. 3,750 VACRMS for 1 minute duration is equivalent to 4,500 VACRMS for 1 second duration. www.onsemi.com 4 Max. 1.0 pF FODM217 Series -- Single Channel Phototransistor Optocoupler In Half-Pitch Small Outline SO4 Package ELECTRICAL CHARACTERISTICS FODM217 Series 160 PDLED - LED POWER DISSIPATION (mW) PDC - COLLECTOR POWER DISSIPATION (mW) TYPICAL CHARACTERISTICS 140 120 100 80 60 40 20 0 0 25 50 75 100 80 60 40 20 0 125 0 TA - AMBIENT TEMPERATURE (C) VF/TA - FORWARD VOLTAGE IF - FORWARD CURRENT (mA) 100 75C 110C -55C 25C 1 0.4 0.6 0.8 1.0 1.2 1.4 1.6 75 100 125 1.8 -2.4 -2.0 -1.6 -1.2 -0.8 -0.4 1 2.0 10 100 IF - FORWARD CURRENT (mA) VF - FORWARD VOLTAGE (V) Figure 3. Forward Current vs. Forward Voltage Figure 4. Forward Voltage Temperature Coefficient vs. Forward Current 5 50 IC - COLLECTOR CURRENT (mA) VCE - COLLECTOR-EMITTER VOLTAGE (V) 50 Figure 2. LED Power Dissipation vs. Ambient Temperature TEMPERATURE COEFFICIENT (mV/C) Figure 1. Collector Power Dissipation vs. Ambient Temperature 10 25 TA - AMBIENT TEMPERATURE (C) 0.5 mA 4 1 mA 3 mA 3 5 mA 7 mA 10 mA 2 1 0 40 30 IF = 5 mA 20 10 0 0 5 10 15 20 0 IF - FORWARD CURRENT (mA) 5 10 VCE - COLLECTOR-EMITTER VOLTAGE (V) Figure 5. Collector Emitter Voltage vs. Forward Current Figure 6. Collector Current vs. Collector-Emitter Voltage www.onsemi.com 5 FODM217 Series 50 0.1 IC - COLLECTOR CURRENT (A) IC - COLLECTOR CURRENT (mA) 10 V 40 30 IF = 5 mA 20 10 0 0.0 0.5 1.0 VCE = 0.4 V 0.01 0.001 0.0001 0.0001 0.001 VCE - COLLECTOR-EMITTER VOLTAGE (V) 1E-6 VCE = 48 V 24 V 1E-8 5V 10 V 1E-10 1E-11 -25 0 25 50 75 1000 100 10 V 5V VCE = 0.4 V 100 10 0.0001 0.001 TA - AMBIENT TEMPERATURE (C) IC - COLLECTOR CURRENT (mA) 100 0.16 SATURATION VOLTAGE (V) VCE(SAT) - COLLECTOR-EMITTER 0.1 Figure 10. Current Transfer Ratio vs. Forward Current 0.18 0.14 0.12 IF = 8 mA IC = 2.4 mA 0.08 IF = 1 mA 0.06 IC = 0.2 mA 0.04 IF = 20 mA 0.02 IC = 1 mA 0.00 -25 0.01 IF - FORWARD CURRENT (A) Figure 9. Collector Dark Current vs. Ambient Temperature 0.10 0.1 Figure 8. Collector Current vs. Forward Current CTR - CURRENT TRANSFER RATIO (%) ICEO - COLLECTOR DARK CURRENT (A) 1E-5 1E-9 0.01 IF - FORWARD CURRENT (mA) Figure 7. Collector Current vs. Small Collector-Emittter Voltage 1E-7 5V 0 25 50 75 20 mA 10 mA 10 1 1 mA IF = 0.5 mA 0.1 -25 100 5 mA TA - AMBIENT TEMPERATURE (C) 0 25 50 75 100 TA - AMBIENT TEMPERATURE (C) Figure 11. Collector-Emitter Saturation vs. Ambient Temperature Figure 12. Collector Current vs. Ambient Temperature www.onsemi.com 6 FODM217 Series 1000 100 VCC = 10 V TA = 25 C IC = 2 mA tOFF t - SWITCHING TIME (s) t - SWITCHING TIME (s) VCC = 5 V IF = 16 mA 100 tF 10 tON 1 RL = 100 tON tOFF 10 tR tF tR 0.1 1 10 1 -25 100 0 RL - LOAD RESISTANCE (k) 25 50 75 100 TA - AMBIENT TEMPERATURE (C) Figure 13. Switching Time vs. Load Resistance Figure 14. Switching Time vs. Ambient Temperature TEST CIRCUIT VCC RL 1 4 VO IF tR tF VO 90% IF Monitor 2 3 10% RM tON Figure 15. Test Circuit for Switching Time www.onsemi.com 7 tOFF FODM217 Series REFLOW PROFILE Profile Freature Pb-Free Assembly Profile Temperature Min. (Tsmin) 150C Temperature Max. (Tsmax) 200C Time (tS) from (Tsmin to Tsmax) 60-120 seconds Ramp-up Rate (tL to tP) 3C/second max. Liquidous Temperature (TL) 217C Time (tL) Maintained Above (TL) 60-150 seconds 260C +0C / -5C Peak Body Package Temperature Time (tP) within 5C of 260C 30 seconds Ramp-down Rate (TP to TL) 6C/second max. Time 25C to Peak Temperature 8 minutes max. Figure 36. Reflow Profile www.onsemi.com 8 FODM217 Series ORDERING INFORMATION (Note 6) Part Number Package Packing Method FODM217A SOP 4-Pin Tube (100 units) FODM217AR2 SOP 4-Pin Tape and Reel (3000 units) FODM217AV SOP 4-Pin, DIN EN/IEC60747-5-5 Option (pending approval) Tube (100 units) FODM217AR2V SOP 4-Pin, DIN EN/IEC60747-5-5 Option (pending approval) Tape and Reel (3000 units) 6. The product orderable part number system listed in this table also applies to the FODM217B, FODM217C, and FODM217D products. www.onsemi.com 9 1.270.25 3 4 0.61 7.87 4.83 4.400.20 1.27 1.52 1 2 0.400.10 TOP VIEW LAND PATTERN RECOMMENDATION 2.600.30 5.440.30 0.250.05 2.000.20 0.10.10 DETAIL A SIDE VIEW FRONT VIEW GAGE PLANE 4 MIN 0.5 SEATING PLANE 1.300.30 DETAIL A 70.45 NOTES: A. NO INDUSTRY STANDARD APPLIES TO THIS PACKAGE B. ALL DIMENSIONS ARE IN MILLIMETERS C. DIMENSIONS DO NOT INCLUDE MOLD FLASH OR BURRS D. DRAWING FILENAME: MKT-MFP04DrevA 0.127 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. "Typical" parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 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