HRD0103C Silicon Schottky Barrier Diode for Rectifying REJ03G0070-0100Z (Previous: ADE-208-1614) Rev.1.00 Aug.29.2003 Features * Low reverse voltage drop and suitable for high efficiency reverse current. * Super small Flat Package (SFP) is suitable for surface mount design. Ordering Information Type No. Laser Mark Package Code HRD0103C S6 SFP Pin Arrangement Cathode mark Mark 1 S6 2 1. Cathode 2. Anode Rev.1.00, Aug.29.2003, page 1 of 5 HRD0103C Absolute Maximum Ratings (Ta = 25C) Item Symbol 1 Value Unit Peak reverse voltage VRM * 30 V Reverse voltage VR 30 V 1 Average rectified current IO * 100 mA Peak forward surge current 300 mA Non-Repetitive peak forward surge current IFM IFSM *2 1 A Junction temperature Tj 125 C Storage temperature Tstg -55 to +125 C Notes: 1. See from Fig.3 to Fig.5. 2. 10 ms sine wave 1 pulse. Electrical Characteristics (Ta = 25C) Item Symbol Min Typ Max Unit Test Condition Forward voltage VF1 -- -- 0.4 V IF = 10 mA VF2 -- -- 0.6 Reverse current IR1 -- -- 0.1 IR2 -- -- 0.2 Capacitance C -- -- 8.0 pF VR = 0.5 V, f = 1 MHz Thermal resistance Rth(j-a) -- 600 -- C/W Polyimide board * Note: IF = 100 mA A VR = 5 V VR = 10 V 1. Polyimide board 3.0 1.5 0.8 20hx15wx0.8t 1.5 Unit: mm 2. Please do not use the soldering iron due to avoid high stress to the SFP package. Rev.1.00, Aug.29.2003, page 2 of 5 1 HRD0103C Main Characteristics 10-3 1.0 Pulse test Pulse test 10-4 Reverse current IR (A) Forward current IF (A) 10-1 Ta = 75C 10-2 Ta = 25C 10-3 -4 10 10 Ta = 50C 10-6 Ta = 25C 10-7 10-5 10-6 Ta = 75C -5 0 0.2 0.4 0.6 0.8 10-8 1.0 0 10 20 30 40 50 Forward voltage VF (V) Reverse voltage VR (V) Fig.1 Forward current vs. Forward voltage Fig.2 Reverse current vs. Reverse voltage 0.030 0.12 0A 0.10 t T t D=-- T Tj = 25C 0.08 Reverse power dissipation Pd (W) Forward power dissipation Pd (W) 0V D=1/6 sin(=180) D=1/3 D=1/2 DC 0.06 0.04 0.02 0 0 0.05 0.10 0.15 0.025 D=5/6 t T t D=-- T Tj = 125C 0.020 D=2/3 D=1/2 0.015 sin(=180) 0.010 0.005 0 0 10 20 30 40 Forward current IF (A) Reverse voltage VR (V) Fig3. Forward power dissipation vs. Forward current Fig4. Reverse power dissipation vs. Reverse voltage Rev.1.00, Aug.29.2003, page 3 of 5 HRD0103C Average rectified current IO (mA) 120 100 VR=VRRM/2 Tj =125C Rth(j-a)=600C/W DC 80 D=1/2 sin(=180) 60 D=1/3 D=1/6 40 20 0 -25 0 25 50 75 100 125 Ambient temperature Ta (C) Fig.5 Average rectified current vs. Ambient temperature Rev.1.00, Aug.29.2003, page 4 of 5 HRD0103C Package Dimensions As of January, 2003 1.0 0.10 0.13 0.05 1.4 0.10 0.5 - 0.55 0.3 0.05 0.6 0.05 Unit: mm Package Code JEDEC JEITA Mass (reference value) Rev.1.00, Aug.29.2003, page 5 of 5 SFP -- -- 0.0010 g Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. 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