PD - 97545 AUTOMOTIVE GRADE AUIRF2907Z HEXFET(R) Power MOSFET Features Advanced Process Technology Ultra Low On-Resistance 175C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * D G S V(BR)DSS 75V RDS(on) max. 4.5m ID (Silicon Limited) 170A ID (Package Limited) 75A D Description Specifically designed for Automotive applications, this HEXFET(R) Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. G D S TO-220AB AUIRF2907Z G D S Gate Drain Source Absolute Maximum Ratings Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25C, unless otherwise specified. Max. Units ID @ TC = 25C Continuous Drain Current, VGS @ 10V (Silicon Limited) Parameter 170 A ID @ TC = 100C Continuous Drain Current, VGS @ 10V (Silicon Limited) 120 ID @ TC = 25C Continuous Drain Current, VGS @ 10V (Package Limited) 75 IDM Pulsed Drain Current 680 PD @TC = 25C Maximum Power Dissipation 300 W Linear Derating Factor 2.0 20 W/C V 270 mJ c VGS EAS Gate-to-Source Voltage EAS (tested) Single Pulse Avalanche Energy Tested Value IAR Avalanche Current EAR Repetitive Avalanche Energy TJ Operating Junction and TSTG Storage Temperature Range Single Pulse Avalanche Energy (Thermally Limited) c i d h 690 See Fig.12a,12b,15,16 -55 to + 175 Soldering Temperature, for 10 seconds (1.6mm from case ) Mounting torque, 6-32 or M3 screw Thermal Resistance j Parameter RJC Junction-to-Case RCS Case-to-Sink, Flat, Greased Surface RJA Junction-to-Ambient A mJ C 300 10 lbf*in (1.1N*m) Typ. Max. Units --- 0.50 0.50 --- C/W --- 62 k HEXFET(R) is a registered trademark of International Rectifier. *Qualification standards can be found at http://www.irf.com/ www.irf.com 1 07/23/2010 AUIRF2907Z Static Electrical Characteristics @ TJ = 25C (unless otherwise specified) Parameter V(BR)DSS VDSS/TJ RDS(on) VGS(th) gfs IDSS IGSS Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. Typ. Max. Units 75 --- --- 2.0 180 --- --- --- --- --- 0.069 3.5 --- --- --- --- --- --- --- --- 4.5 4.0 --- 20 250 200 -200 Conditions V VGS = 0V, ID = 250A V/C Reference to 25C, ID = 1mA m VGS = 10V, ID = 75A V VDS = VGS, ID = 250A S VDS = 25V, ID = 75A A VDS = 75V, VGS = 0V VDS = 75V, VGS = 0V, TJ = 125C nA VGS = 20V VGS = -20V f Dynamic Electrical Characteristics @ TJ = 25C (unless otherwise specified) Parameter Qg Qgs Qgd td(on) tr td(off) tf LD Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Min. Typ. Max. Units --- --- --- --- --- --- --- --- 180 46 65 19 140 97 100 5.0 270 --- --- --- --- --- --- --- LS Internal Source Inductance --- 13 --- Ciss Coss Crss Coss Coss Coss eff. Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance --- --- --- --- --- --- 7500 970 510 3640 650 1020 --- --- --- --- --- --- nC ns nH Conditions ID = 75A VDS = 60V VGS = 10V VDD = 38V ID = 75A RG = 2.5 VGS = 10V Between lead, f f D 6mm (0.25in.) from package pF G S and center of die contact VGS = 0V VDS = 25V = 1.0MHz, See Fig. 5 VGS = 0V, VDS = 1.0V, = 1.0MHz VGS = 0V, VDS = 60V, = 1.0MHz VGS = 0V, VDS = 0V to 60V Diode Characteristics Parameter IS Continuous Source Current ISM (Body Diode) Pulsed Source Current VSD (Body Diode) Diode Forward Voltage trr Qrr ton Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time c Notes: Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11). Limited by TJmax, starting TJ = 25C, L=0.095mH, RG = 25, IAS = 75A, VGS =10V. Part not recommended for use above this value. ISD 75A, di/dt 340A/s, VDD V(BR)DSS, TJ 175C. Pulse width 1.0ms; duty cycle 2%. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS . 2 Min. Typ. Max. Units --- --- 75 A --- --- --- --- --- --- 41 59 680 1.3 61 89 Conditions MOSFET symbol V ns nC showing the integral reverse D G p-n junction diode. TJ = 25C, IS = 75A, VGS = 0V TJ = 25C, IF = 75A, VDD = 38V di/dt = 100A/s S f f Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance. This value determined from sample failure population, starting TJ = 25C, L=0.095mH, RG = 25, IAS = 75A, VGS =10V. R is measured at TJ of approximately 90C. TO-220 device will have an Rth of 0.45C/W. www.irf.com AUIRF2907Z Qualification Information Automotive (per AEC-Q101) Comments: This part number(s) passed Automotive qualification. IR's Industrial and Consumer qualification level is granted by extension of the higher Automotive level. Qualification Level Moisture Sensitivity Level Machine Model TO-220AB N/A Class M4 (425V) AEC-Q101-002 ESD Human Body Model Class H2 (4000V) AEC-Q101-001 Charged Device Model Class C4 (1000V) AEC-Q101-005 RoHS Compliant Yes Qualification standards can be found at International Rectifiers web site: http//www.irf.com/ Exceptions to AEC-Q101 requirements are noted in the qualification report. www.irf.com 3 AUIRF2907Z 1000 10000 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V 1000 BOTTOM TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP BOTTOM VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V 100 100 4.5V 10 4.5V 60s PULSE WIDTH 60s PULSE WIDTH Tj = 175C Tj = 25C 1 0.1 1 10 10 0.1 100 Fig 1. Typical Output Characteristics 100 200 Gfs, Forward Transconductance (S) ID, Drain-to-Source Current () 10 Fig 2. Typical Output Characteristics 1000 T J = 175C 100 10 T J = 25C 1 VDS = 25V 60s PULSE WIDTH 0.1 2 4 6 8 VGS, Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics 4 1 V DS, Drain-to-Source Voltage (V) V DS, Drain-to-Source Voltage (V) T J = 25C 150 T J = 175C 100 50 V DS = 10V 380s PULSE WIDTH 0 10 0 25 50 75 100 125 150 ID,Drain-to-Source Current (A) Fig 4. Typical Forward Transconductance vs. Drain Current www.irf.com nce AUIRF2907Z 100000 12.0 VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd VGS, Gate-to-Source Voltage (V) ID= 90A C, Capacitance(pF) C oss = C ds + C gd 10000 Ciss Coss Crss 1000 100 VDS= 60V VDS= 38V 10.0 VDS= 15V 8.0 6.0 4.0 2.0 0.0 1 10 100 0 VDS, Drain-to-Source Voltage (V) 100 150 200 QG Total Gate Charge (nC) Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage Fig 5. Typical Capacitance vs. Drain-to-Source Voltage 10000 ID, Drain-to-Source Current (A) 1000 ISD, Reverse Drain Current (A) 50 T J = 175C 100 TJ = 25C 10 OPERATION IN THIS AREA LIMITED BY R DS(on) 1000 100sec 1msec 100 Limited by package 10 10msec 1 Tc = 25C Tj = 175C Single Pulse VGS = 0V DC 0.1 1 0.0 0.5 1.0 1.5 2.0 VSD, Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage www.irf.com 2.5 1 10 100 VDS, Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area 5 AUIRF2907Z 180 160 RDS(on) , Drain-to-Source On Resistance (Normalized) 2.5 Limited By Package ID, Drain Current (A) 140 120 100 80 60 40 20 0 ID = 90A VGS = 10V 2.0 1.5 1.0 0.5 25 50 75 100 125 150 175 -60 -40 -20 0 T C , Case Temperature (C) 20 40 60 80 100 120 140 160 180 T J , Junction Temperature (C) Fig 10. Normalized On-Resistance vs. Temperature Fig 9. Maximum Drain Current vs. Case Temperature 1 Thermal Response ( Z thJC ) D = 0.50 0.20 0.10 0.1 R1 R1 0.05 J 0.02 0.01 0.01 J 1 R2 R2 C 1 2 2 Ri (C/W) i (sec) 0.279 0.000457 0.221 0.003019 Ci= i/Ri Ci i/Ri SINGLE PULSE ( THERMAL RESPONSE ) 0.001 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.0001 1E-006 1E-005 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 6 www.irf.com 1 AUIRF2907Z EAS , Single Pulse Avalanche Energy (mJ) 1200 15V ID TOP 9.0A 13A BOTTOM 75A 1000 DRIVER L VDS D.U.T RG + V - DD IAS 20V VGS tp A 0.01 Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS 800 600 400 200 0 tp 25 50 75 100 125 150 175 Starting T J , Junction Temperature (C) I AS Fig 12c. Maximum Avalanche Energy vs. Drain Current Fig 12b. Unclamped Inductive Waveforms QG 10 V QGS QGD VG Charge Fig 13a. Basic Gate Charge Waveform VGS(th) Gate threshold Voltage (V) 4.0 3.5 3.0 2.5 ID = 250A 2.0 1.5 L DUT 0 1K VCC 1.0 -75 -50 -25 0 25 50 75 100 125 150 175 200 T J , Temperature ( C ) Fig 14. Threshold Voltage vs. Temperature Fig 13b. Gate Charge Test Circuit www.irf.com 7 AUIRF2907Z 100 Avalanche Current (A) 0.01 Duty Cycle = Single Pulse Allowed avalanche Current vs avalanche pulsewidth, tav assuming Tj = 25C due to avalanche losses 0.05 0.10 10 1 0.1 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 tav (sec) Fig 15. Typical Avalanche Current Vs.Pulsewidth EAR , Avalanche Energy (mJ) 300 TOP Single Pulse BOTTOM 1% Duty Cycle ID = 75A 250 200 150 100 50 0 25 50 75 100 125 150 Starting T J , Junction Temperature (C) Fig 16. Maximum Avalanche Energy vs. Temperature 8 175 Notes on Repetitive Avalanche Curves , Figures 15, 16: (For further info, see AN-1005 at www.irf.com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of T jmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long asT jmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 12a, 12b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25C in Figure 15, 16). tav = Average time in avalanche. D = Duty cycle in avalanche = tav *f ZthJC(D, tav ) = Transient thermal resistance, see figure 11) PD (ave) = 1/2 ( 1.3*BV*Iav) = DT/ ZthJC Iav = 2DT/ [1.3*BV*Zth] EAS (AR) = PD (ave)*tav www.irf.com AUIRF2907Z D.U.T Driver Gate Drive + - P.W. + * D.U.T. ISD Waveform Reverse Recovery Current + RG V DD * dv/dt controlled by RG * Driver same type as D.U.T. * I SD controlled by Duty Factor "D" * D.U.T. - Device Under Test P.W. Period VGS=10V Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer - D= Period + Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage - Body Diode VDD Forward Drop Inductor Curent Ripple 5% * ISD VGS = 5V for Logic Level Devices Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET(R) Power MOSFETs V DS V GS RG RD D.U.T. + -V DD 10V Pulse Width 1 s Duty Factor 0.1 % Fig 18a. Switching Time Test Circuit VDS 90% 10% VGS td(on) tr t d(off) tf Fig 18b. Switching Time Waveforms www.irf.com 9 AUIRF2907Z TO-220AB Package Outline Dimensions are shown in millimeters (inches) TO-220AB Part Marking Information Part Number AUIRF2907Z YWWA IR Logo XX or Date Code Y= Year WW= Work Week A= Automotive, LeadFree XX Lot Code TO-220AB packages are not recommended for Surface Mount Application. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 10 www.irf.com AUIRF2907Z Ordering Information Base part AUIRF2907Z www.irf.com Package Type TO-220 Standard Pack Form Tube Complete Part Number Quantity 50 AUIRF2907Z 11 AUIRF2907Z IMPORTANT NOTICE Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or services without notice. Part numbers designated with the "AU" prefix follow automotive industry and / or customer specific requirements with regards to product discontinuance and process change notification. All products are sold subject to IR's terms and conditions of sale supplied at the time of order acknowledgment. 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