CM200DU-34KA
APPLICATION
General purpose inverters & Servo controls, etc
MITSUBISHI IGBT MODULES
CM200DU-34KA
HIGH POWER SWITCHING USE
● IC ...................................................................200A
● VCES .......................................................... 1700V
● Insulated Type
● 2-elements in a pack
Feb. 2009
3-M6 NUTS
Tc measured point
4-φ6.5 MOUNTING HOLES
L A B E L
G1 G2
E2
E1
CM
C1
E2
C2E1
(8.25)
18.25
(18.5)
62
±0.25
80
110
93
±0.25
2.5
21.5
6156
1414
29
+1.0
–0.5
18718718
14
21 8.5
7.5
2.8
4
0.5
0.5
0.5
0.5
4
25 25
CIRCUIT DIAGRAM
C2E1
E2 C1
G2E2
E1
G1
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
Not Recommend
for New Design
2
Feb. 2009
ICES
IGES
Cies
Coes
Cres
QG
td(on)
tr
td(off)
tf
trr (
Note 1
)
Qrr (
Note 1
)
VEC(
Note 1
)
Rth(j-c)Q
Rth(j-c)R
Rth(c-f)
Rth(j-c’)Q
Gate-emitter threshold voltage
Collector-emitter saturation voltage
Thermal resistance*1
1700
±20
200
400
200
400
1100
–40 ~ +150
–40 ~ +125
3500
3.5 ~ 4.5
3.5 ~ 4.5
580
MITSUBISHI IGBT MODULES
CM200DU-34KA
HIGH POWER SWITCHING USE
V
V
W
°C
°C
Vrms
N • m
N • m
g
A
A
1
0.5
4.0
—
29
4.8
1.5
—
600
200
700
800
600
—
4.6
—
0.11
0.18
—
0.05✽3
mA
µA
nF
nC
µC
V
V
K/W
—
—
3.2
3.8
—
—
—
900
—
—
—
—
—
9.6
—
2.2
—
—
0.02
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
5.5 V
V
ns
47
ns
Collector cutoff current
Gate leakage current
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Reverse recovery time
Reverse recovery charge
Emitter-collector voltage
Contact thermal resistance
Thermal resistance
Symbol Parameter
VGE(th)
VCE(sat)
Note 1. IE, VEC, trr, Qrr & die/dt represent characteristics of the anti-parallel, emitter-collector free-wheel diode (FWDi).
2. Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tjmax rating.
3. Junction temperature (Tj) should not increase beyond 150°C.
4. Pulse width and repetition rate should be such as to cause negligible temperature rise.
*1 : Case temperature (Tc) measured point is indicated in OUTLINE DRAWING.
*2 : Typical value is measured by using thermally conductive grease of
λ
= 0.9[W/(m • K)].
*3 : If you use this value, Rth(f-a) should be measured just under the chips.
Collector-emitter voltage
Gate-emitter voltage
Maximum collector dissipation
Junction temperature
Storage temperature
Isolation voltage
Weight
G-E Short
C-E Short
TC = 25°C
Pulse (Note 2)
TC = 25°C
Pulse (Note 2)
TC = 25°C
Terminals to base plate, f = 60Hz, AC 1 minute
Main terminals M6 screw
Mounting M6 screw
Typical value
Symbol Parameter
Collector current
Emitter current
Torque strength
Conditions UnitRatings
VCES
VGES
IC
ICM
IE (
Note 1
)
IEM (
Note 1
)
PC (
Note 3
)
Tj
Tstg
Viso
—
Unit
Typ.
Limits
Min. Max.
—
Test conditions
MAXIMUM RATINGS (Tj = 25°C, unless otherwise specified)
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)
VCE = VCES, VGE = 0V
±VGE = VGES, VCE = 0V
Tj = 25°C
Tj = 125°C
VCC = 1000V, IC = 200A, VGE = 15V
VCC = 1000V, IC = 200A
VGE = ±15V
RG = 1.6Ω, Inductive load
IE = 200A
IE = 200A, VGE = 0V, Tj = 25°C
IE = 200A, VGE = 0V, Tj = 125°C
IGBT part (1/2 module)
FWDi part (1/2 module)
Case to heat sink, Thermal compound applied
*2
(1/2 module)
Case temperature measured point is just under the chips
IC = 20mA, VCE = 10V
IC = 200A, VGE = 15V
VCE = 10V
VGE = 0V
Not Recommend
for New Design
3
Feb. 2009
MITSUBISHI IGBT MODULES
CM200DU-34KA
HIGH POWER SWITCHING USE
0
400
200
300
100
0246810
OUTPUT CHARACTERISTICS
(TYPICAL)
COLLECTOR CURRENT IC (A)
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
Tj = 25°C11
12
10
9
8
VGE = 20V
15
14
048121620
TRANSFER CHARACTERISTICS
(TYPICAL)
COLLECTOR CURRENT (A)
GATE-EMITTER VOLTAGE V
GE
(V)
VCE = 10V
Tj = 25°C
Tj = 125°C
300
400
200
100
0
6
5
4
3
1
2
00 300200100 400
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER
SATURATION VOLTAGE V
CE (sat)
(V)
COLLECTOR CURRENT I
C
(A)
VGE = 15V
Tj = 25°C
Tj = 125°C
10
8
6
4
2
02068 12 1610 14 18
GATE-EMITTER VOLTAGE V
GE
(V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER
SATURATION VOLTAGE V
CE (sat)
(V)
Tj = 25°C
IC = 400A
IC = 200A
IC = 80A
10
0
2
3
5
7
10
1
2
3
5
7
10
2
10
3
2
3
5
7
12345
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
EMITTER CURRENT IE (A)
EMITTER-COLLECTOR VOLTAGE V
EC
(V)
Tj = 25°C
10
–1
10
–1
10
0
2
3
5
7
10
1
2
3
5
7
10
2
2
3
5
7
2
10
0
357 2
10
1
357 2
10
2
357
CAPACITANCE–VCE
CHARACTERISTICS
(TYPICAL)
CAPACITANCE C
ies
, C
oes
, C
res
(nF)
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
Cies
Coes
Cres
VGE = 0V
PERFORMANCE CURVES
Not Recommend
for New Design
4
Feb. 2009
MITSUBISHI IGBT MODULES
CM200DU-34KA
HIGH POWER SWITCHING USE
101102
57
103
23 57
102
2
3
5
7
103
2
3
5
7
104
2
3
5
7
101
23
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
SWITCHING TIMES (ns)
COLLECTOR CURRENT IC (A)
Conditions:
V
CC
= 1000V
V
GE
= ±15V
R
G
= 1.6Ω
T
j
= 125°C
Inductive load
t
d(off)
t
d(on)
t
f
t
r
101102
23 57
103
23 57
101
102
2
3
5
7
103
2
3
5
7
REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE
(TYPICAL)
EMITTER CURRENT I
E
(A)
REVERSE RECOVERY TIME trr (ns)
REVERSE RECOVERY CURRENT lrr (A)
t
rr
I
rr
Conditions:
V
CC
= 1000V
V
GE
= ±15V
R
G
= 1.6Ω
T
j
= 25°C
Inductive load
101
10–3
10
–5
10
–4
100
7
5
3
2
10–2
7
5
3
2
10–1
7
5
3
2
7
5
3
2
10
–3
23 57 23 57 23 57 23 57
10
1
10
–2
10
–1
10
0
10
–3
10–3
7
5
3
2
10–2
7
5
3
2
10–1
3
2
23 57 23 57
Single Pulse
T
C
= 25°C
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT part & FWDi part)
NORMALIZED TRANSIENT
THERMAL IMPEDANCE Zth (j–c) (ratio)
TIME (s)
IGBT part:
Per unit base = R
th(j–c)
= 0.11K/W
FWDi part:
Per unit base = R
th(j–c)
= 0.18K/W
0
4
8
16
12
20
0 200 600 1200400 1000800
GATE CHARGE
CHARACTERISTICS
(TYPICAL)
GATE-EMITTER VOLTAGE VGE (V)
GATE CHARGE QG (nC)
V
CC
= 800V
V
CC
= 1000V
I
C
= 200A
Not Recommend
for New Design
