Planar and Mesa Beam Lead PIN Diodes a > Co = DSG64XX, DSM63XX Series Features @ Low Capacitance @ Low Resistance @ Fast Switching @ OxideNitride Passivated @ Stronger, Full Frame Design M@ High Voitage Description Alphas Silicon Planar and Mesa Beam Lead PIN diodes are surrounded by a glass frame for superior strength and electrical performance that surpasses the standard beam lead PINs. They are designed for low resistance, low capacitance and fast switching time. The oxidenitride passivation layers provide reliable operation and stable junction parameters that provide complete sealing of the junction permitting Electrical Specifications Low Capacitance Planar Beam Lead Diodes Maximum Ratings 65 to + 150 C 65 to + 200 C Operating Temperature: Storage Temperature: Power Dissipation (Derate 250 mW Linearly to Zero @ 175C): Typical Lead Strength: 8 Grams Pull use in assemblies with some degree of moisture sealing. A layer of glass provides increased mechanical strength. Alphas beam lead PIN diodes are ideal for microstrip or stripline circuits and for circuits requiring high isolation from a series mounted diode such as broad band multi-throw switches, phase shifters, limiters, attenuators and modulators. Reverse Recovery Capacitance Series Minority Carrier Time IF=20 mA, Breakdown Total @ 50 Volts, | Resistance @ 20 Lifetime VR=10V, Voltage @ 10 uA 1 MHz mA 100 MHz IF=10mA, IR=6mA 90% Recovery Outline Part (Voits) (pF) (Ohms) (ns) (ns) Drawing Number Number min typ typ max typ max typ typ max DSG6405 100 125 0.017 0.02 4.5 6.0 85 20 35 389-004 6-16 ALPHA INDUSTRIES, INC. * 20 SYLVAN ROAD, WOBURN, MA 01801 TEL: (617) 935-5150 FAX: {617} 824-4579Planar and Mesa Beam Lead PIN Diodes DSG64XX, DSM63XX Series Performance Data for DSG6405 100 E 10K E @ 10 = 1K SN E = = = BS | gS 5 1-= | $ 100 Oo = 2 = CD aa i p g = io w eo 0.1 + a 10 E sot ] tT | 0.25 0.50 0.75 1.00 1.25 0.1 1 10 100 Forward Voltage (V) Forward Bias Current (mA) Figure 1. Typical Forward Characteristics Figure 3. Typical RF Resistance vs. Forward Bias Current 0.08 | | 45- | | 40- 0.06 35| US 30- Cc 5 a 2. ~ o 20- (10 Volts) = 0.04 ge 1S go e 10 8 Ss 5 a s 0. 0.75 t- 0.60 0.02 AQ MHz - 0.45 Above 1 GHz | may =f 90 ferry t+ 0.15 0 TT rT 0 10 20 30 0 5 10 15 180 25 30 Reverse Voltage (Volts) Frequency (GHz) Figure 2. Typical Capacitance vs. Reverse Figure 4. Typical Insertion Loss and Isolation Bias Voltage Characteristics Electrical Specifications Planar Beam Lead Diodes Voltage Series Resistance Junction Breakdown (Ohms) (From Capacitance C, | RF Switching | Minority Carrier Outline Part @10mA Insertion Loss @ (pF) Time Ts Lifetime Typ. Drawing Number (min) 3 GHz, 50 mA)! (max) (max) (ns)? (ns) Number DSG6470-06 200 5.5 0.03 25 100 169-001 DSG6470-30 200 4.0 0.02 25 100 169-001 DSG6474-06 100 5.5 0.03 25 100 169-001 DSG6474-30 100 4.0 0.02 25 100 169-001 1. Total capacitance calculated from isolation at 9 GHz zero bias. Series resistance and capacitance are measured at microwave frequencies on a sample basis from each lot. All diodes are characterized for capacitance at -50 Volts, 1 MHz, and series resistance at 1 KHz, 50 mA, measurements which correlate well with microwave measurements. 2. Tg measured from PF transition, 90% to 10%, in series configuration. ALPHA INDUSTRIES, INC. * 20 SYLVAN ROAD, WOBURN, MA 01801 TEL: (617) 935-5150 * FAX: (617) 824-4579 6-1 7Planar and Mesa Beam Lead PIN Diodes DSG64XX, DSM63XX Series Performance Data for DSG6470/74 Series Figure 5, which is a typical application of a beam lead PIN diode, is a single pole doublethrow 1-18 GHz switch these diodes are mounted an Alumina, Duriod, or Teflon fiberglass 50 ohm microstrip circuits. Typical bonding methods include thermal compression bonding, parallel gap welding,and soldering. SPDT isolation curves are shown in Figure 6 and insertion loss in Figures 7 and 8. With proper transitions and bias circuits, VSWR is better than 2.0 to 1 through 18 GHz. Switching Considerations The typical minority carrier lifetime of the DSG6470 and DSG6474 diodes is 100 ns. With suitable drivers, the individual diodes can be switched from high impedance (off) to low Rs (on) in about 10 ns. . iod Beam Lead Pin Duriod Substrate 50 Ohm Glass Bead \ Connecting 50 Ohm Lead Transmission Line Figure 5. Typical SPDT Circuit Arrangement Beam Lead Pin Preferred Beam 0.005 j}>| / Lead Orientation a I WN Metal Conductor Duroid Figure 6. Typical Beam Lead Mounting Insertion 38 toss Isolate <J 36 32 ~@ 502 | 502 Isolation (dB) ~ nD a oO 8 LoL oO fet] 3 Qa of/F m qi o 0 I 0 2 4 6 8 10 12 14 16 18 Frequency (GHz) Figure 7. Isolation vs. Frequency, SPDT DSG6470, DSG6474 Series Isolation (dB) 0 10 50 100 Bias Current (mA) Figure 8. Diode Insertion Loss vs. Bias SPST, 18 GHz DSG6470, DSG6474 Series 6-18 ALPHA INDUSTRIES, ING. * 20 SYLVAN ROAD, WOBURN, MA 01801 TEL: (617) 935-5150 * FAX: (617) 624-4579; Planar and Mesa Beam Lead PIN Diodes DSG64XX, DSM63XX Series Power Handling for DGS64XX Beam lead diodes are not suitable for high power operation because of high internal thermal impedance of about 600C/Watt. 1.4 7 _ 12-4 502 > ey 1.0 @ 08- Yo S come | c & 72 an d-30 a 8 0.4 Le = "} -18 0.2 ' ! 0+ TO | 0 2 4 6 B 10 12 14 16 18 Frequency (GHz) Figure 9. Diode Insertion Loss vs. Frequency SPST, 50 mA Bias DSG6470, DSG6474 Series With maximum CW power dissipation of 250 mW, the DSG6470 and DSG6474 diodes are normally rated at 2 Watt CW with linear derating between 25C and 150C. Figure 10 presents data on CW power handling as a function of bias and frequency. 5000 0.4V/ 0.1V 2000 ~ @ 1000 = Y 10% increase in a = 500- small signal in- YA = sertion loss when = 200 -| NX biased at 50 mA. to s | 5 100 10% decreasein -+ a 7 small signal inser- _| tion loss when 3 50 biased at -1V/-4V. | 20 | re 0.10205 10 20 50 10 20 Frequency (GHz) Figure 10. Typical Series Switch Behavior at Room Temperature and Biased at 50ma/1V/ 4V DSG6470, DSG6474 Series For pulsed operation, the total RF plus bias voltage must not exceed the rated breakdown. Alpha has made high power tests at 1 GHz with 1us pulses, 0.001 duty, with 200V diodes. With 50 mA forward bias, there is no increase in insertion loss over the 0 dBm level with a peak power input of 50 watts. In the open state, reverse bias voltage is required to keep the diode from rectifying, with resultant decrease in isolation and possible failure. Figure 11 shows allowed peak power versus reverse bias at 1 GHz. At this frequency, the required reverse voltage is almost equal to the peak RF voltage; at high frequency, the bias can be reduced somewhat. Experimentation is necessary. 100 50Q > 50Q > 80 L s 60 60| = : = 40 rs] o 2077 On pr nn 0 10 50 100 Reverse Bias (Volts) Figure 11. Peak Power Handling, SPST, 1 GHz DSG6470, DSG6474 Series ALPHA INDUSTRIES, INC. * 20 SYLVAN ROAD, WOBURN, MA 01801 TEL: (617) 935-5150 * FAX: (617) 824-4579 6-19Planar and Mesa Beam Lead PIN Diodes DSG64XX, DSM63XX Series Mesa Beam Lead Diode Specifications Series Resistance (Ohms) CLT Voltage Breakdown Capacitance Total IF=1t0mA, Outline Part @IR<10mA 50 Volts, 1MHz 50 mA, 10 mA, IR=6mA Drawing Number (Volts) max (pF) max 100 MHz max | 100 MHz typ (ns) typ Number Fast Beam Lead Pin Diodes DSM6380-06 100 0.03 3.5 4.0 40 389-003 DSM6380-12 100 0.04 3.0 3.5 50 383-003 DSM6380-30 100 0.025 4.0 45 40 389-003 DSM6381-06 150 0.03 4.0 45 60 389-003 DSM6381-12 150 0.04 3.5 4.0 80 389-003 DSM6381-30 150 0.025 45 5.0 50 389-003 UltraFast Beam Lead PIN Diodes DSM6340 80 0.025 3.0 3.8 30 389-003 DSM6341 BO 0.035 2.5 3.5 30 389-003 Low-Loss Ultra-Fast Beam Lead PIN Diodes DSM6361 60 0.0251 3.52 _ 25 389-003 DSM6362 60 0.0451 3.02 _ 30 389-003 1. Capacitance Total @ 10 Volts, 1 MHz, pF, Max. 2. Series Resistance @ 10 mA, Ohms, Max., 100 MHz. Voltage Switching Breakdown @ 10uA, | Series Resistance | Capacitance Total Lifetime Time Video Outline Part Reverse Current @ 50 MHz, 50 mA @ -10V, 1 MHz (ns) (ns) Recovery | Drawing Number ; Time (ns)? | Number min typ typ max typ | max typ! typ? (ns) Ultra Low Resistance High~Speed Beam Lead PIN Diodes DSM6355 50 80 1.5 2.0 0.07 0.08 40 10 389-003 DSM6356 30 50 1.2 1.5 0.12 0.15 30 383-003 1, IF=10mA, !=6mA, recovery to 3 mA. 2. Video recovery time at 2 GHz from IF=10mA to Vpy=10V, from 100% to 10% in series configuration. Video reverse recovery time from IF=10mA to IR=2mA, with Va=10mvV. Time (ns) 0 5 0.3 1.0 3 10 30 100 300 [CC T I 1 5 Mesa Beam ead pnvention | eam Lea Attenuation (dB) 3 a r 20 2 Vr = 40 Volts Figure 12. Switching Time Data 6-20 ALPHA INDUSTRIES, INC. * 20 SYLVAN ROAD, WOBURN, MA 01801 TEL: (617) 935-5150 * FAX: (617) 824-4579Planar and Mesa Beam Lead PIN Diodes DSG64XX, DSM63XX Series Performance Data for DSG6380 and 81 100 E 45- FE 40- 10 / 35-] | z= E / 200 \_ = 25- 5 1 -e a oo > 5 E 3 (10 Volts) _ = - ~~ 10- ao O04 [ S 5 S ge CE sO + 0.75 B 5 ji 2 |osmese1-3 toma) [ 2:60 5 3 C G (OMA) | O45 c 10.01 = | o30 2 FE 13 8 F DSM6380-34 | 0.15 @ 0.001 | - iH . | = 0 2 4 6 8 10 0 5 10 15 180 25 30 Forward Voltage (V) Frequency (GHz) Figure 13. Typical Forward Characteristics of Figure 15. Typical Isolation and Insertion Loss the DSM6380 Series Characteristics of the DSM6380/638130 100 += 20 E | : [- | c F419 NN | s 15 FE _[DSM6381-00 Sos 2 - DSM6380-3 G . Ss 0.04 ey -k __ 0.03 ze - 0.02 0.01 - 1 0 10 20 30 1 1 10 100 Reverse Voltage (Volts) Forward Bias Current (mA) Figure 14. Typical Capacitance vs. Reverse Figure 16. Typical RF Resistance vs. Forward Voltage for DSM638030 Bias Current for DSM6380/81-30 ALPHA INDUSTRIES, INC. * 20 SYLVAN ROAD, WOBURN, MA 01801 TEL: (617) 935-5150 + FAX: (617) 824-4579 6-21Planar and Mesa Beam Lead PIN Diodes ; DSG64XX, DSM63XX Series Performance Data for DSG6340/41 and 61 45- 20. 40- | 35- 30| \_ _ 25 _ 20+ a < 15 OQ 15- (10 Volts) ~ 2 = 104 S 0.06 2 F ~ 8 0.05 3 0 0.75 8 & 04 9 L 0.60 5 6 4 2 DSM6340 fiom) | yas 0.03 Jer l vans 0. a F 080% 1p, Above | DSM6361 y 0.15 2 : TT o 5 10 15 180 25 30 0 10 20 30 Frequency (GHz) Reverse Voltage (Volts) Figure 17. Typical Isolation and Insertion Loss Figure 19. Typical Capacitance vs. Reverse Characteristics of the DSM6340 and DSM6361 Voltage for DSM6340 100 = 20 E & 15 = 10 | g g Sa DSM6361 & 0.06 goOO& SS 8 0.05 @ [~ s 0.04 C1 0.03 iF E 0.02 = - 0.01 Above 1 L_ /-+ 1 0 10 20 30 1 1 10 100 Reverse Voltage (Volts) Forward Bias Current (mA) Figure 18. Typical Capacitance vs. Reverse Figure 20. Typical RF Resistance vs. Forward Voltage for DSM6361 Bias Current for DSM6361, and DSM6341 ALPHA INDUSTRIES, INC. * 20 SYLVAN ROAD, WOBURN, MA 01801 6-22 TEL: (617) 935-5150 * FAX: (617) 824-4579Performance Data for DSM6355 and DSM6356 100 : LY 10 + } ae ech = F | psme63s5/, 5 1 - 5 OE 5, I 5 // } DSM6356 LEI TTT 0.01 y 0,001 [ 0.2 0.4 0.6 0.8 1.0 Forward Voltage (V) o- Figure 21. Typical Forward Characteristics 100 = : | EK | | Ft : 19 4s g DSM6355 c io 3 - Pe el 3 1 _ rc -E L Ec TE 1! 1 1 10 100 Forward Bias Current (mA) Figure 22. Typical RF Resistance vs. Forward Bias Current Planar and Mesa Beam Lead PIN Diodes DSG64XX, DSM63XX Series 0.20 {| sf oon 0.15 -}- : g > | \. psmesse | 8 1 MHz i 8 \e ~ | Q ' | | w fy | ' | Oo NG Loy 0.10 N\ | i ~ No Masss | - | MHz 0.07 | = Above 1 GHz ! ' 10 20 30 Reverse Voltage (Volts) Figure 23. Typical Capacitance vs. Reverse Voltage Outline Drawing 389-004 0.905 /0.13 ma) f/ 9.00340: 08 (O. 26mm) 0.011 { WLLL 4 0007/0. 018 mr 0. o00e0.005") 2-PLCS. (CO. 13mm) 0.00S | Lot Lo. o1150. 292 t | | J [0.0080 3: 303m") 1) mm) e014 2-PLCS, 0, 36mm) be aX. .030 (0.76 3 02? = (0168 nn) ALPHA INDUSTRIES, INC. * 20 SYLVAN ROAD, WOBURN, MA 01801 TEL: (617) 935-5150 * FAX: (617) 824-4579 6-23