AO3404A N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO3404A uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. VDS (V) = 30V ID = 5.8A RDS(ON) < 25m RDS(ON) < 35m (VGS = 10V) (VGS = 10V) (VGS = 4.5V) SOT23 Top View Bottom View D D D G S G S S G Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current A,F VGS TA=25C TA=70C TA=25C Junction and Storage Temperature Range Maximum Junction-to-Lead C Rev.5.0: June 2015 20 V ID 4.9 IDM 64 W 0.9 TJ, TSTG -55 to 150 Symbol t 10s Steady-State Steady-State A 1.4 PD TA=70C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Units V 5.8 Pulsed Drain Current B Power Dissipation Maximum 30 RJA RJL www.aosmd.com Typ 65 85 63 C Max 90 125 80 Units C/W C/W C/W Page 1 of 4 Electrical Characteristics (T J=25C unless otherwise noted) Parameter Symbol STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS Conditions Min ID=250A, VGS=0V IGSS Gate-Body leakage current VDS=0V, VGS= 20V VGS(th) Gate Threshold Voltage VDS=VGS ID=250A 1.5 ID(ON) On state drain current VGS=4.5V, VDS=5V 64 RDS(ON) Static Drain-Source On-Resistance gFS Forward Transconductance VDS=5V, ID=5.8A VSD Diode Forward Voltage IS=1A, VGS=0V IS Maximum Body-Diode Continuous Current TJ=125C Gate resistance 2.1 100 nA 2.6 V A 18.4 25 26.2 36 24.5 35 m m 22 0.75 DYNAMIC PARAMETERS Ciss Input Capacitance Rg A 5 VGS=4.5V, ID=4.8A Output Capacitance V TJ=55C VGS=10V, ID=5.8A Reverse Transfer Capacitance Units 1 Zero Gate Voltage Drain Current Crss Max 30 VDS=30V, VGS=0V IDSS Coss Typ 373 VGS=0V, VDS=15V, f=1MHz S 1 V 2.5 A 448 pF 67 pF 41 pF 1.8 2.8 SWITCHING PARAMETERS Qg(10V) Total Gate Charge 7.1 11 nC Qg(4.5V) Total Gate Charge 3.3 nC 1.4 nC 1.7 nC Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Qrr VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=15V, ID=5.8A 0.9 4.5 6.5 ns VGS=10V, VDS=15V, RL=2.6, RGEN=3 2.4 ns 14.8 ns IF=5.8A, di/dt=100A/s 10.5 Body Diode Reverse Recovery Charge IF=5.8A, di/dt=100A/s 4.5 Body Diode Reverse Recovery Time 2.5 ns 12.6 ns nC A: The value of R JA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The value in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead R JL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The SOA curve provides a single pulse rating. F.The current rating is based on the t 10s thermal resistance rating. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.5.0: June 2015 www.aosmd.com Page 2 of 4 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 60 15 10V VDS=5V 6V 50 VDS=5V 12 9 4.5V ID (A) ID (A) 40 30 20 125C 6 125C VGS=3.5V 10 0 25C 0 0 1 2 3 4 5 1.5 2 VDS (Volts) Figure 1: On-Region Characteristics 2.5 3 373 67 41 VGS=10V 1.2 Id=5.8A Normalized On-Resistance 1.8 38 3.5 4 4.5 VGS (Volts) Figure 2: Transfer Characteristics 45 RDS(ON) (m) 25C 3 VGS=4.5V 31 24 17 VGS=10V 10 1.6 448 1.8 1.4 1.2 VGS=4.5V Id=4.8A 1 0.8 0.6 0 5 10 15 20 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 100 125 12.6 150 10.5 4.5 Temperature (C) 75 175 Figure 4: On-Resistance vs. Junction Temperature 60 1.0E+01 ID=5.8A 1.0E+00 1.0E-01 40 125C IS (A) RDS(ON) (m) 50 30 125C 1.0E-02 25C 1.0E-03 20 FUNCTIONS AND RELIABILITY WITHOUT NOTICE. 25C 10 2 4 6 8 1.0E-04 10 1.0E-05 0.0 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Rev.5.0: June 2015 www.aosmd.com 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics Page 3 of 4 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 600 10 VDS=15V ID=5.8A 500 Capacitance (pF) VGS (Volts) 8 6 4 Ciss 400 300 Coss 200 2 100 0 0 2 4 6 Crss 0 8 0 Qg (nC) Figure 7: Gate-Charge Characteristics 100.0 5 10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 30 30 10s TJ(Max)=150C TA=25C RDS(ON) limited 100s 1.0 1ms 10ms 0.1 0.0 0.01 0.1 20 10 0.1s DC TJ(Max)=150C TA=25C Power (W) ID (Amps) 10.0 10s 1 10 0 0.001 100 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) ZJA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=125C/W 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 T 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Rev.5.0: June 2015 www.aosmd.com Page 4 of 4