GaN Wideband Transistor 28 V, 5 W
DC - 6 GHz
Rev. V1
NPTB00004A
1
1
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* Restrictions on Hazardous Substances, European Union Directive 2011/65/EU.
Ordering Information
Part Number Package
NPTB00004A bulk quantity
NPTB00004A-SMBPPR sample
Features
GaN on Si HEMT D-Mode Transistor
Suitable for linear and saturated applications
Tunable from DC - 6 GHz
28 V Operation
14.8 dB Gain @ 2.5 GHz
57 % Drain Efficiency @ 2.5 GHz
100 % RF Tested
Industry standard SOIC plastic package
RoHS* Compliant and 260°C reflow compatible
Description
The NPTB00004A GaN HEMT is a wideband
transistor optimized for DC - 6 GHz operation. This
device supports CW, pulsed, and linear operation
with output power levels to 5 W (37 dBm) in an
industry standard surface mount plastic package.
The NPTB00004A is ideally suited for defense
communications, land mobile radio, avionics,
wireless infrastructure, ISM applications and VHF/
UHF/L/S-band radar.
Pin Configuration
Functional Schematic
Pin No. Pin Name Function
1 N/C No Connection
2 RFIN / VG RF Input / Gate
3 RFIN / VG RF Input / Gate
4 N/C No Connection
5 N/C No Connection
6 RFOUT / VD RF Output / Drain
7 RFOUT / VD RF Output / Drain
8 N/C No Connection
9 Paddle1 Ground / Source
1. The exposed pad centered on the package bottom must be
connected to RF and DC ground. This path must also pro-
vide a low thermal resistance heat path.
9
1
2
3
8
7
6
45
6
RFOUT / VD
RFOUT / VD
N/C
RFIN / VG
RFIN / VG
N/C
N/C N/C
Paddle
GaN Wideband Transistor 28 V, 5 W
DC - 6 GHz
Rev. V1
NPTB00004A
2
2
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RF Electrical Specifications: TC = 25C, VDS = 28 V, IDQ = 50 mA
Parameter Test Conditions Symbol Min. Typ. Max. Units
Small Signal Gain CW, 2.5 GHz GSS - 16 - dB
Saturated Output Power CW, 2.5 GHz PSAT - 37.1 - dBm
Drain Efficiency at Saturation CW, 2.5 GHz SAT - 63.7 - %
Power Gain 2.5 GHz, POUT = 4 W GP 12.8 14.8 - dB
Drain Efficiency 2.5 GHz, POUT = 4 W 45 57 - %
Ruggedness: Output Mismatch All phase angles VSWR = 15:1, No Device Damage
DC Electrical Characteristics: TC = 25C
Parameter Test Conditions Symbol Min. Typ. Max. Units
Drain-Source Leakage Current VGS = -8 V, VDS = 100 V IDLK - - 2 mA
Gate-Source Leakage Current VGS = -8 V, VDS = 0 V IGLK - - 1 mA
Gate Threshold Voltage VDS = 28 V, ID = 2 mA VT -2.5 -1.6 -0.5 V
Gate Quiescent Voltage VDS = 28 V, ID = 50 mA VGSQ -2.1 -1.3 -0.3 V
On Resistance VDS = 2 V, ID = 15 mA RON - 1.6 -
Maximum Drain Current VDS = 7 V pulsed, pulse width 300 µs ID,MAX - 1.4 - A
GaN Wideband Transistor 28 V, 5 W
DC - 6 GHz
Rev. V1
NPTB00004A
3
3
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For further information and support please visit:
https://www.macom.com/support
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2. Exceeding any one or combination of these limits may cause permanent damage to this device.
3. MACOM does not recommend sustained operation near these survivability limits.
4. Operating at nominal conditions with TJ ≤ 200°C will ensure MTTF > 1 x 106 hours.
Parameter Absolute Maximum
Drain Source Voltage, VDS 100 V
Gate Source Voltage, VGS -10 to 3 V
Gate Current, IG 4 mA
Junction Temperature, TJ +200°C
Operating Temperature -40°C to +85°C
Storage Temperature -65°C to +150°C
5. Junction temperature (TJ) measured using IR Microscopy. Case temperature measured using thermocouple
embedded in heat-sink.
Parameter Test Conditions Symbol Typical Units
Thermal Resistance VDS = 28 V, TJ = 180°C RJC 15 °C/W
Thermal Characteristics5
Handling Procedures
Please observe the following precautions to avoid
damage:
Static Sensitivity
Gallium Nitride Circuits are sensitive to electrostatic
discharge (ESD) and can be damaged by static
electricity. Proper ESD control techniques should
be used when handling these HBM Class 1A
devices.
Absolute Maximum Ratings2,3,4
GaN Wideband Transistor 28 V, 5 W
DC - 6 GHz
Rev. V1
NPTB00004A
4
4
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Frequency
(MHz) ZS
(Ω)
ZL
(Ω)
PSAT
(W)
GSS
(dB)
Drain Efficiency
@ PSAT (%)
900 6.1 + j15 72 + j36 7.0 23.0 68
2200 5.0 - j5.0 14 + j17 6.7 19.0 66
2700 5.0 - j10 13 + j12 6.7 17.0 62
5800 10 - j60 14 - j34 6.5 11.0 52
Load-Pull Performance: VDS = 28 V, IDQ = 50 mA, TC = 25°C
Reference Plane at Device Leads, CW Drain Efficiency and Output Power Tradeoff Impedance
Gain vs. Output Power Drain Efficiency vs. Output Power
Impedance Reference ZS and ZL vs. Frequency
ZSZL
5
10
15
20
25
15 20 25 30 35 40
900MHz
2200MHz
2700MHz
5800MHz
Gain (dB)
POUT (dBm)
0
10
20
30
40
50
60
70
15 20 25 30 35 40
900MHz
2200MHz
2700MHz
5800MHz
Drain Efficiency (%)
POUT (dBm)
GaN Wideband Transistor 28 V, 5 W
DC - 6 GHz
Rev. V1
NPTB00004A
5
5
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Parts measured on evaluation board (20-mil thick
RO4350). The PCB’s electrical and thermal ground
is provided using a standard-plated densely packed
via hole array (see recommended via pattern).
Matching is provided using a combination of
lumped elements and transmission lines as shown
in the simplified schematic above. Recommended
tuning solution component placement, transmission
lines, and details are shown on the next page.
Evaluation Board and Recommended Tuning Solution
2.5 GHz Narrowband Circuit
Description
Turning the device ON
1. Set VGS to the pinch-off (VP), typically -5 V.
2. Turn on VDS to nominal voltage (28 V).
3. Increase VGS until the IDS current is reached.
4. Apply RF power to desired level.
Turning the device OFF
1. Turn the RF power off.
2. Decrease VGS down to VP.
3. Decrease VDS down to 0 V.
4. Turn off VGS.
Bias Sequencing
Recommended Via Pattern (All dimensions shown as inches)
C13
2.7 pF
RFIN
C10
33 pF
C4
1000 pF
C3
0.01 mF
C2
0.1 mF
C1
1.0 mF
VGS VDS
C15
1.5 pF
C14
3.3 pF
RFOU T
C9
1000 pF
NPTB00004A
C6
1.0 mF
C7
0.1 mF
C8
0.01 mF
C12
2.4 pF
R1
200
C11
33 pF
R2
0.033
C5
100 mF
GaN Wideband Transistor 28 V, 5 W
DC - 6 GHz
Rev. V1
NPTB00004A
6
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Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
6
Reference Value Tolerance Manufacturer Part Number
C1, C6 1.0 µF 10% AVX 12101C105KAT2A
C2, C7 0.1 µF 10% Murata GRM188R72A104KA35D
C3, C8 0.01 µF 10% AVX 06031C103KAT2A
C4, C9 1000 pF 10% AVX 06031C102KAT2A
C5 100 µF 20% Panasonic ECE-V1JA101P
C10, C11 33 pF 5% ATC ATC600F330JT
C12 2.4 pF 5% ATC ATC600F2R4JT
C13 2.7 pF 5% ATC ATC600F2R7JT
C14 3.3 pF 5% ATC ATC600F3R3JT
C15 1.5 pF 5% ATC ATC600F1R5JT
R1 200 Ω 5% Panasonic ERJ-2GEJ201X
R2 0.33 Ω 1% Susumu RL1220S-R33-F
PCB Rogers RO4350, r = 3.5, 20 mil
Evaluation Board and Recommended Tuning Solution
2.5 GHz Narrowband Circuit
Parts list
GaN Wideband Transistor 28 V, 5 W
DC - 6 GHz
Rev. V1
NPTB00004A
7
7
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Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
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Typical Performance as measured in the 2.5 GHz evaluation board:
CW, VDS = 28 V, IDQ = 50 mA (unless noted)
Gain vs. Output Power over Temperature Drain Efficiency vs. Output Power over Temperature
Quiescent VGS vs. Temperature
0
10
20
30
40
50
60
15 20 25 30 35 40
+25°C
-40°C
+85°C
Drain Efficiency (%)
POUT (dBm)
11
12
13
14
15
16
17
18
15 20 25 30 35 40
+25°C
-40°C
+85°C
Gain (dB)
POUT (dBm)
-1.5
-1.4
-1.3
-1.2
-1.1
-50 -25 0 25 50 75 100
25mA
50mA
75mA
VGSQ (V)
Temperature (oC)
GaN Wideband Transistor 28 V, 5 W
DC - 6 GHz
Rev. V1
NPTB00004A
8
8
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For further information and support please visit:
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2-Tone IMD vs. Output Power
2-Tone IMD3 vs. Output Power vs. Quiescent Current 2-Tone Gain vs. Output Power vs. Quiescent Current
Typical 2-Tone Performance as measured in the 2.5 GHz evaluation board:
1 MHz Tone Spacing, VDS = 28 V, IDQ = 50 mA, TC = 25°C (unless noted)
12.0
13.0
14.0
15.0
16.0
17.0
18.0
0.1 1 10
17mA
25mA
50mA
75mA
100mA
Gain (dB)
POUT (W-PEP)
-45
-40
-35
-30
-25
-20
-15
0.1 1 10
17mA
25mA
50mA
75mA
100mA
IMD (dBc)
POUT (W-PEP)
-60
-50
-40
-30
-20
-10
0.1 1 10
-IMD3
+IMD3
-IMD5
+IMD5
-IMD7
+IMD7
IMD (dBc)
POUT (W-PEP)
GaN Wideband Transistor 28 V, 5 W
DC - 6 GHz
Rev. V1
NPTB00004A
9
9
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For further information and support please visit:
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9
Evaluation Board and Recommended Tuning Solution
100-800 MHz BroadBand Circuit
Reference Value Tolerance Manufacturer Part Number
C1, C8 1.0 µF 10% AVX 12101C105KAT2A
C2, C7 0.1 µF 10% Murata GRM188R72A104KA35D
C3, C6, C10 0.01 µF 10% AVX 06031C103KAT2A
C4, C5, 1000 pF 10% AVX 06031C102KAT2A
C9 100 µF 20% Panasonic ECE-V1JA101P
C11, C14 240 pF 0.1 pF ATC ATC600F241F
C12 10 pF 0.1 pF ATC ATC600F100B
C13, C15 1.5 pF 5% ATC ATC600F1R5J
F1 Material 73 - Fair-Rite 2673000801
L1 100 nH 5% Coilcraft 0805CS-101XJ
L2 100 nH 5% Coilcraft 1812SMS-R10
L3, L5 5 nH 10% Coilcraft A02TKLJ
L4 2.5 nH 10% Coilcraft A01TKLJ
R1 300 Ω 5% Panasonic ERJ-14YJ301U
R2 0.33 Ω 1% Susumu RL1220S-R33-F
R3 470 Ω 1% Stackpole RHC2512FT470R
R4 10 Ω 5% Panasonic ERJ-14YJ100U
PCB Rogers RO4350, r=3.5, 0.020”
Parts list
GaN Wideband Transistor 28 V, 5 W
DC - 6 GHz
Rev. V1
NPTB00004A
10
10
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For further information and support please visit:
https://www.macom.com/support
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Performance vs. Frequency at POUT= PSAT Performance vs. Frequency at POUT = 36 dBm
Performance vs Output Power (f = 600 MHz) Small Signal s-parameters vs Frequency
Evaluation Board and Recommended Tuning Solution
100-800 MHz BroadBand Circuit
5
10
15
20
25
30
20
25
30
35
40
45
100 200 300 400 500 600 700 800
Gain
Drain Eff
Gain (dB)
Drain Efficiency (%)
Frequency (MHz)
11
12
13
14
15
16
0
10
20
30
40
50
15 20 25 30 35 40
Gain
Drain Eff
Gain (dB)
Drain Efficiency (%)
POUT (dBm)
C11
240 pF
RFIN
C4
1000 pF
C3
0.01 mF
C2
0.1 mF
C1
1.0 mF
VGS VDS
C14
240 pF
RFOUT
NPTB00004A
C8
1.0 mF
C7
0.1 mF
C6
0.01 mF
R1
300
R2
0.33
C9
100 mF
L1
100 nH
L2
100 nH
R3
470
C10
0.01 mF
C5
1000 pF
F1
L4
2.5 nH
L5
5.0 nH
C13
1.5 pF
C12
10 pF
R4
10
L3
5.0 nH C15
1.5 pF
10
15
20
25
30
-40
-30
-20
-10
0
100 200 300 400 500 600 700 800
s21
s11
s22
s21 (dB)
s11, s22 (dB)
Frequency (MHz)
GaN Wideband Transistor 28 V, 5 W
DC - 6 GHz
Rev. V1
NPTB00004A
11
11
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For further information and support please visit:
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11
SOIC 8-Lead Plastic Package†
† Meets JEDEC moisture sensitivity level 3 requirements.
Plating is Matte Sn.
All dimensions shown as inches [millimeters].
GaN Wideband Transistor 28 V, 5 W
DC - 6 GHz
Rev. V1
NPTB00004A
12
12
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
12
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products. These materials are provided by MACOM as a service to its customers and may be used for
informational purposes only. Except as provided in MACOM's Terms and Conditions of Sale for such products or
in any separate agreement related to this document, MACOM assumes no liability whatsoever. MACOM
assumes no responsibility for errors or omissions in these materials. MACOM may make changes to
specifications and product descriptions at any time, without notice. MACOM makes no commitment to update
the information and shall have no responsibility whatsoever for conflicts or incompatibilities arising from future
changes to its specifications and product descriptions. No license, express or implied, by estoppels or otherwise,
to any intellectual property rights is granted by this document.
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IMPLIED, RELATING TO SALE AND/OR USE OF MACOM PRODUCTS INCLUDING LIABILITY OR
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INCIDENTAL DAMAGES, MERCHANTABILITY, OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR
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WHICH MAY RESULT FROM THE USE OF THESE MATERIALS.
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