BSC016N03LS G
OptiMOS™3 Power-MOSFET
Features
• Fast switching MOSFET for SMPS
• Optimized technology for DC/DC converters
• Qualified according to JEDEC1) for target applications
• N-channel
• Logic level
• Excellent gate charge x RDS(on) product (FOM)
• Very low on-resistance RDS(on)
• Superior thermal resistance
• Avalanche rated
• Pb-free plating; RoHS compliant;
• Halogen-free according to IEC61249-2-21
Maximum ratings, at Tj=25 °C, unless otherwise specified
Parameter Symbol Conditions Unit
Continuous drain current IDVGS=10 V, TC=25 °C 100 A
VGS=10 V, TC=100 °C 100
VGS=4.5 V, TC=25 °C 100
VGS=4.5 V,
TC=100 °C 100
VGS=10 V, TA=25 °C,
RthJA=50 K/W2) 32
Pulsed drain current3) ID,pulse TC=25 °C 400
Avalanche current, single pulse4) IAS TC=25 °C 50
Avalanche energy, single pulse EAS ID=50 A, RGS=25 Ω290 mJ
Reverse diode dv/dtdv/dt
ID=50 A, VDS=24 V,
di/dt=200 A/µs,
Tj,max=150 °C
6 kV/µs
Gate source voltage VGS ±20 V
Value
1) J-STD20 and JESD22
VDS 30 V
RDS(on),max 1.6 mΩ
ID100 A
Product Summary
PG-TDSON-8
Type Package Marking
BSC016N03LS G PG-TDSON-8 016N03LS
Rev. 1.28 page 1 2009-10-22
BSC016N03LS G
Maximum ratings, at Tj=25 °C, unless otherwise specified
Parameter Symbol Conditions Unit
Power dissipation Ptot TC=25 °C 125 W
TA=25 °C,
RthJA=50 K/W2) 2.5
Operating and storage temperature Tj, Tstg -55 ... 150 °C
IEC climatic category; DIN IEC 68-1 55/150/56
Parameter Symbol Conditions Unit
min. typ. max.
Thermal characteristics
Thermal resistance, junction - case RthJC bottom - - 1 K/W
top - - 18
Device on PCB RthJA 6 cm2 cooling area2) --50
Electrical characteristics, at Tj=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage V(BR)DSS VGS=0 V, ID=1 mA 30 - - V
Gate threshold voltage VGS(th) VDS=VGS, ID=250 µA 1 - 2.2
Zero gate voltage drain current IDSS
VDS=30 V, VGS=0 V,
Tj=25 °C - 0.1 1 µA
VDS=30 V, VGS=0 V,
Tj=125 °C - 10 100
Gate-source leakage current IGSS VGS=20 V, VDS=0 V - 10 100 nA
Drain-source on-state resistance RDS(on) VGS=4.5 V, ID=30 A - 1.8 2.3 mΩ
VGS=10 V, ID=30 A - 1.3 1.6
Gate resistance RG0.7 1.5 2.6 Ω
Transconductance gfs
|VDS|>2|ID|RDS(on)max,
ID=30 A 65 130 - S
3) See figure 3 for more detailed information
Value
Values
2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 1.28 page 2 2009-10-22
BSC016N03LS G
Parameter Symbol Conditions Unit
min. typ. max.
Dynamic characteristics
Input capacitance Ciss - 7600 10000 pF
Output capacitance Coss - 2600 3500
Reverse transfer capacitance Crss - 160 -
Turn-on delay time td(on) -13-ns
Rise time tr- 8.6 -
Turn-off delay time td(off) -51-
Fall time tf- 8.6 -
Gate Char
g
e Characteristics5)
Gate to source charge Qgs -2128nC
Gate charge at threshold Qg(th) -1216
Gate to drain charge Qgd -1017
Switching charge Qsw -1929
Gate charge total Qg-4763
Gate plateau voltage Vplateau - 2.8 - V
Gate charge total Qg
VDD=15 V, ID=30 A,
VGS=0 to 10 V - 98 131
Gate charge total, sync. FET Qg(sync)
VDS=0.1 V,
VGS=0 to 4.5 V -4155nC
Output charge Qoss VDD=15 V, VGS=0 V -6790
Reverse Diode
Diode continuous forward current IS- - 100 A
Diode pulse current IS,pulse - - 400
Diode forward voltage VSD
VGS=0 V, IF=30 A,
Tj=25 °C - 0.78 1.1 V
Reverse recovery charge Qrr
VR=15 V, IF=IS,
diF/dt=400 A/µs - - 30 nC
5) See figure 16 for gate charge parameter definition
4) See figure 13 for more detailed information
TC=25 °C
Values
VGS=0 V, VDS=15 V,
f=1 MHz
VDD=15 V, VGS=10 V,
ID=30 A, RG=1.6 Ω
VDD=15 V, ID=30 A,
VGS=0 to 4.5 V
Rev. 1.28 page 3 2009-10-22
BSC016N03LS G
1 Power dissipation 2 Drain current
Ptot=f(TC)ID=f(TC); VGS≥10 V
3 Safe operating area 4 Max. transient thermal impedance
ID=f(VDS); TC=25 °C; D=0 ZthJC=f(tp)
parameter: tpparameter: D=tp/T
1 µs
10 µs
100 µs
1 ms
10 ms
DC
102
101
100
10-1
103
102
101
100
10-1
VDS [V]
ID [A]
limited by on-state
resistance
single pulse
0.01
0.02
0.05
0.1
0.2
0.5
100
10-1
10-2
10-3
10-4
10-5
10-6
0.01
0.1
1
10
0000001
tp [s]
ZthJC [K/W]
0
20
40
60
80
100
120
140
0 40 80 120 160
TC [°C]
Ptot [W]
0
20
40
60
80
100
120
0 40 80 120 160
TC [°C]
ID [A]
Rev. 1.28 page 4 2009-10-22
BSC016N03LS G
5 Typ. output characteristics 6 Typ. drain-source on resistance
ID=f(VDS); Tj=25 °C RDS(on)=f(ID); Tj=25 °C
parameter: VGS parameter: VGS
7 Typ. transfer characteristics 8 Typ. forward transconductance
ID=f(VGS); |VDS|>2|ID|RDS(on)max gfs=f(ID); Tj=25 °C
parameter: Tj
3 V
3.2 V
3.5 V
4 V
4.5 V
5 V
10 V
11.5 V
0
1
2
3
4
5
0 1020304050
ID [A]
RDS(on) [mΩ]
25 °C
150 °C
0
40
80
120
160
200
012345
VGS [V]
ID [A]
0
50
100
150
200
250
300
0 40 80 120 160
ID [A]
gfs [S]
2.8 V
3 V
3.2 V
3.5 V
4 V
4.5 V
5 V
10 V
0
50
100
150
200
250
300
0123
VDS [V]
ID [A]
Rev. 1.28 page 5 2009-10-22
BSC016N03LS G
9 Drain-source on-state resistance 10 Typ. gate threshold voltage
RDS(on)=f(Tj); ID=30 A; VGS=10 V VGS(th)=f(Tj); VGS=VDS; ID=250 µA
11 Typ. capacitances 12 Forward characteristics of reverse diode
C=f(VDS); VGS=0 V; f=1 MHz IF=f(VSD)
parameter: Tj
typ
98 %
0
0.5
1
1.5
2
2.5
3
-60 -20 20 60 100 140 180
Tj [°C]
RDS(on) [mΩ]
0
0.5
1
1.5
2
2.5
-60 -20 20 60 100 140 180
Tj [°C]
VGS(th) [V]
Ciss
Coss
Crss
104
103
102
10110
100
1000
10000
0 5 10 15 20 25 30
VDS [V]
C [pF]
25 °C
150 °C
25 °C, 98%
150 °C, 98%
1
10
100
1000
0.0 0.5 1.0 1.5 2.0
VSD [V]
IF [A]
Rev. 1.28 page 6 2009-10-22
BSC016N03LS G
13 Avalanche characteristics 14 Typ. gate charge
IAS=f(tAV); RGS=25 ΩVGS=f(Qgate); ID=30 A pulsed
parameter: Tj(start) parameter: VDD
15 Drain-source breakdown voltage 16 Gate charge waveforms
VBR(DSS)=f(Tj); ID=1 mA
20
22
24
26
28
30
32
34
-60 -20 20 60 100 140 180
Tj [°C]
VBR(DSS) [V]
V
GS
Q
gate
V
gs(th)
Q
g(th)
Q
gs
Q
gd
Q
sw
Q
g
25 °C
100 °C
125 °C
1
10
100
1 10 100 1000
tAV [µs]
IAV [A]
6 V
15 V
24 V
0
2
4
6
8
10
12
0 40 80 120
Qgate [nC]
VGS [V]
Rev. 1.28 page 7 2009-10-22
BSC016N03LS G
Package Outline PG-TDSON-8
PG-TDSON-8: Outline
Rev. 1.28 page 8 2009-10-22
BSC016N03LS G
Package Outline
PG-TDSON-8: Tape
Dimensions in mm
Rev. 1.28 page 9 2009-10-22
BSC016N03LS G
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2007 Infineon Technologies AG
All Rights Reserved.
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conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
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For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office
(www.infineon.com).
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Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
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Rev. 1.28 page 10 2009-10-22
