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HAL805

Programmable Linear

Hall Effect Sensor

Edition June 24, 2004

6251-513-2DS

DATA SHEET

MICRONAS

HAL 805 DATA SHEET

2June 24, 2004; 6251-513-2DS Micronas

Contents

Page Section Title

3 1. Introduction

3 1.1. Major Applications

31.2.Features

4 1.3. Marking Code

4 1.3.1. Special Marking of Prototype Parts

4 1.4. Operating Junction Temperature Range (TJ)

4 1.5. Hall Sensor Package Codes

4 1.6. Solderability

4 1.7. Pin Connections and Short Descriptions

5 2. Functional Description

5 2.1. General Function

7 2.2. Digital Signal Processing and EEPROM

9 2.3. Calibration Procedure

9 2.3.1. General Procedure

10 2.3.2. Calibration of the Angle Sensor

12 3. Specifications

12 3.1. Outline Dimensions

16 3.2. Dimensions of Sensitive Area

16 3.3. Position of Sensitive Areas

16 3.4. Absolute Maximum Ratings

17 3.4.1. Storage and Shelf Life

17 3.5. Recommended Operating Conditions

17 3.6. Characteristics

18 3.7. Magnetic Characteristics

19 3.8. Open Circuit Detection

20 3.9. Typical Characteristics

22 4. Application Notes

22 4.1. Application Circuit

22 4.2. Use of two HAL805 in Parallel

22 4.3. Temperature Compensation

23 4.4. Undervoltage Behavior

23 4.5. Ambient Temperature

23 4.6. EMC and ESD

24 5. Programming of the Sensor

24 5.1. Definition of Programming Pulses

24 5.2. Definition of the Telegram

26 5.3. Telegram Codes

27 5.4. Number Formats

28 5.5. Register Information

28 5.6. Programming Information

30 6. Data Sheet History

DATA SHEET HAL 805

Micronas June 24, 2004; 6251-513-2DS 3

Programmable Linear Hall Effect Sensor

Release Note: Revision bars indicate significant

changes to the previous edition.

1. Introduction

The HAL805 is a recent member of the Micronas fam-

ily of programmable linear Hall sensors. It offers open-

circuit detection and individual programming of differ-

ent sensors which are in parallel to the same supply

voltage.

The HAL805 is an universal magnetic field sensor with

a linear output based on the Hall effect. The IC is

designed and produced in sub-micron CMOS technol-

ogy and can be used for angle or distance measure-

ments if combined with a rotating or moving magnet.

The major characteristics like magnetic field range,

sensitivity, output quiescent voltage (output voltage at

B = 0 mT), and output voltage range are programma-

ble in a non-volatile memory. The sensor has a ratio-

metric output characteristic, which means that the out-

put voltage is proportional to the magnetic flux and the

supply voltage.

The HAL805 features a temperature-compensated

Hall plate with choppered offset compensation, an A/D

converter, digital signal processing, a D/A converter

with output driver, an EEPROM memory with redun-

dancy and lock function for the calibration data, a serial

interface for programming the EEPROM, and protec-

tion devices at all pins. The internal digital signal pro-

cessing is of great benefit because analog offsets,

temperature shifts, and mechanical stress do not

degrade the sensor accuracy.

The HAL805 is programmable by modulating the sup-

ply voltage. No additional programming pin is needed.

The easy programmability allows a 2-point calibration

by adjusting the output voltage directly to the input sig-

nal (like mechanical angle, distance, or current). Indi-

vidual adjustment of each sensor during the cus-

tomer’s manufacturing process is possible. With this

calibration procedure, the tolerances of the sensor, the

magnet, and the mechanical positioning can be com-

pensated in the final assembly. This offers a low-cost

alternative for all applications that presently need

mechanical adjustment or laser trimming for calibrating

the system.

In addition, the temperature compensation of the Hall

IC can be fit to all common magnetic materials by pro-

gramming first and second order temperature coeffi-

cients of the Hall sensor sensitivity. This enables oper-

ation over the full temperature range with high

accuracy.

The calculation of the individual sensor characteristics

and the programming of the EEPROM memory can

easily be done with a PC and the application kit from

Micronas.

The sensor is designed for hostile industrial and auto-

motive applications and operates with typically 5 V

supply voltage in the ambient temperature range from

−40 °C up to 150 °C. The HAL805 is available in the

very small leaded packages TO92UT-1 and TO92UT-2.

1.1. Major Applications

Due to the sensor’s versatile programming characteris-

tics, the HAL805 is the optimal system solution for

applications such as:

– contactless potentiometers,

– angle sensors,

– distance measurements,

– magnetic field and current measurement.

WARNING:

DO NOT USE THESE SENSORS IN LIFE-

SUPPORTING SYSTEMS, AVIATION, AND

AEROSPACE APPLICATIONS.

1.2. Features

– high-precision linear Hall effect sensor with

ratiometric output and digital signal processing

– multiple programmable magnetic characteristics in a

non-volatile memory (EEPROM) with redundancy

and lock function

– open-circuit detection (ground and supply line break

detection)

– for programming an individual sensor within several

sensors in parallel to the same supply voltage, a

selection can be done via the output pin

– temperature characteristics are programmable for

matching all common magnetic materials

– programmable clamping function

– programming through a modulation of the supply

voltage

– operates from −40 °C up to 150 °C

ambient temperature

– operates from 4.5 V up to 5.5 V supply voltage in

specification and functions up to 8.5 V

– operates with static magnetic fields and dynamic

magnetic fields up to 2 kHz

HAL 805 DATA SHEET

4June 24, 2004; 6251-513-2DS Micronas

– overvoltage and reverse-voltage protection at all

pins

– magnetic characteristics extremely robust against

mechanical stress

– short-circuit protected push-pull output

– EMC and ESD optimized design

1.3. Marking Code

The HAL805 has a marking on the package surface

(branded side). This marking includes the name of the

sensor and the temperature range.

1.3.1. Special Marking of Prototype Parts

Prototype parts are coded with an underscore beneath

the temperature range letter on each IC. They may be

used for lab experiments and design-ins but are not

intended to be used for qualification tests or as produc-

tion parts.

1.4. Operating Junction Temperature Range (TJ)

The Hall sensors from Micronas are specified to the

chip temperature (junction temperature TJ).

A: TJ = −40 °C to +170 °C

K: TJ = −40 °C to +140 °C

The relationship between ambient temperature (TA)

and junction temperature is explained in Section 4.5.

on page 23.

1.5. Hall Sensor Package Codes

Example: HAL805UT-K

→Type: 805

→Package: TO92UT

→Temperature Range: TJ = −40°C to +140°C

Hall sensors are available in a wide variety of packag-

ing versions and quantities. For more detailed informa-

tion, please refer to the brochure: “Hall Sensors:

Ordering Codes, Packaging, Handling”.

1.6. Solderability

Package TO92UT-1/-2: according to IEC68-2-58

During soldering reflow processing and manual

reworking, a component body temperature of 260 °C

should not be exceeded.

Solderability is guaranteed for one year from the date

code on the package. Solderability has been tested

after storing the devices for 16 hours at 155 °C. The

wettability was more than 95%.

1.7. Pin Connections and Short Descriptions

Fig. 1–1: Pin configuration

Type Temperature Range

A K

HAL805 805A 805K

No. Pin Name Type Short Description

DD IN Supply Voltage and

Programming Pin

2 GND Ground

3 OUT OUT Push Pull Output

and Selection Pin

HALXXXPA-T

Temperature Range: A or K

Package: UT for TO92UT-1/-2

Type: 805

VDD

OUT

GND

DATA SHEET HAL 805

Micronas June 24, 2004; 6251-513-2DS 5

2. Functional Description

2.1. General Function

The HAL805 is a monolithic integrated circuit which

provides an output voltage proportional to the mag-

netic flux through the Hall plate and proportional to the

supply voltage (ratiometric behavior).

The external magnetic field component perpendicular

to the branded side of the package generates a Hall

voltage. The Hall IC is sensitive to magnetic north and

south polarity. This voltage is converted to a digital

value, processed in the Digital Signal Processing Unit

(DSP) according to the settings of the EEPROM regis-

ters, converted to an analog voltage with ratiometric

behavior, and stabilized by a push-pull output transis-

tor stage. The function and the parameters for the DSP

are explained in Section 2.2. on page 7.

The setting of the LOCK register disables the program-

ming of the EEPROM memory for all time. This regis-

ter cannot be reset.

As long as the LOCK register is not set, the output

characteristic can be adjusted by programming the

EEPROM registers. The IC is addressed by modulat-

ing the supply voltage (see Fig. 2–1). In the supply

voltage range from 4.5 V up to 5.5 V, the sensor gen-

erates an analog output voltage. After detecting a

command, the sensor reads or writes the memory and

answers with a digital signal on the output pin. The

analog output is switched off during the communica-

tion.

Several sensors in parallel to the same supply and

ground line can be programmed individually. The

selection of each sensor is done via its output pin.

The open-circuit detection provides a defined output

voltage if the VDD or GND line is broken. Internal tem-

perature compensation circuitry and the choppered off-

set compensation enables operation over the full tem-

perature range with minimal changes in accuracy and

high offset stability. The circuitry also rejects offset

shifts due to mechanical stress from the package. The

non-volatile memory consists of redundant EEPROM

cells. In addition, the sensor IC is equipped with

devices for overvoltage and reverse-voltage protection

at all pins.

Fig. 2–1: Programming with VDD modulation

Fig. 2–2: HAL805 block diagram

VOUT (V)

VDD (V)

HAL

805

VDD GND

OUT analog

VDD

digital

Internally

Temperature

Oscillator

Switched 100 Ω

Digital D/A Analog OUT

VDD

GND

Supply EEPROM Memory

Lock Control

Digital

stabilized

Supply and

Protection

Devices

Dependent

Bias

Protection

Devices

Hall Plate Signal

Processing Converter Output

Level

Detection Output

A/D

Converter

10 kΩ

Open

Circuit

Detection

HAL 805 DATA SHEET

6June 24, 2004; 6251-513-2DS Micronas

Fig. 2–3: Details of EEPROM and Digital Signal Processing

MODE Register

FILTER

6 bit

TCSQ

5 bit

SENSI-

14 bit

VOQ

11 bit

CLAMP-

10 bit 11 bit

LOCKR

1 bit

3 bit

RANGE

3 bit

EEPROM Memory

A/D

Converter

Digital

Filter

Multiplier Adder Limiter D/A

Converter

Digital Signal Processing

ADC-READOUT Register

14 bit

Digital

Lock

Control

TIVITY LOW

CLAMP-

HIGH

Output

Micronas

Registers

–40 –20 0 20 40 mT

VOUT Clamp-high = 4 V

Sensitivity = 0.116

VOQ = 2.5 V

Clamp-low = 1 V

Range = 30 mT

Filter = 500 Hz

Fig. 2–4: Example for output characteristics

–150 –100 –50 0 50 100 150 mT

VOUT

Clamp-high = 4.5 V

Sensitivity = –1.36

VOQ = –0.5 V

Clamp-low = 0.5 V

Range = 100 mT

Filter = 2 kHz

Fig. 2–5: Example for output characteristics

DATA SHEET HAL 805

Micronas June 24, 2004; 6251-513-2DS 7

2.2. Digital Signal Processing and EEPROM

The DSP is the main part of this sensor and performs

the signal conditioning. The parameters for the DSP

are stored in the EEPROM registers. The details are

shown in Fig. 2–3.

Terminology:

SENSITIVITY: name of the register or register value

Sensitivity: name of the parameter

The EEPROM registers consist of three groups:

Group 1 contains the registers for the adaption of the

sensor to the magnetic system: MODE for selecting

the magnetic field range and filter frequency, TC and

TCSQ for the temperature characteristics of the mag-

netic sensitivity.

Group 2 contains the registers for defining the output

characteristics: SENSITIVITY, VOQ, CLAMP-LOW,

and CLAMP-HIGH. The output characteristic of the

sensor is defined by these 4 parameters (see Fig. 2–4

and Fig. 2–5 for examples).

–The parameter V

OQ (Output Quiescent Voltage)

corresponds to the output voltage at B = 0 mT.

– The parameter Sensitivity defines the magnetic sen-

sitivity:

– The output voltage can be calculated as:

The output voltage range can be clamped by setting

the registers CLAMP-LOW and CLAMP-HIGH in order

to enable failure detection (such as short-circuits to

VDD or GND and open connections).

Group 3 contains the Micronas registers and LOCK for

the locking of all registers. The Micronas registers are

programmed and locked during production and are

read-only for the customer. These registers are used

for oscillator frequency trimming, A/D converter offset

compensation, and several other special settings.

An external magnetic field generates a Hall voltage on

the Hall plate. The ADC converts the amplified positive

or negative Hall voltage (operates with magnetic north

and south poles at the branded side of the package) to

a digital value. Positive values correspond to a mag-

netic north pole on the branded side of the package.

The digital signal is filtered in the internal low-pass fil-

ter and is readable in the ADC-READOUT register.

Depending on the programmable magnetic range of

the Hall IC, the operating range of the A/D converter is

from −30 mT...+30 mT up to −150 mT...+150 mT.

During further processing, the digital signal is multi-

plied with the sensitivity factor, added to the quiescent

output voltage and limited according to the clamping

voltage. The result is converted to an analog signal

and stabilized by a push-pull output transistor stage.

The ADC-READOUT at any given magnetic field

depends on the programmed magnetic field range but

also on the filter frequency. Fig. 2–6 shows the typical

ADC-READOUT values for the different magnetic field

ranges with the filter frequency set to 2 kHz. The rela-

tionship between the minimum and maximum ADC-

READOUT values and the filter frequency setting is

listed in the following table.

∆VOUT

∆B

Sensitivity =

VOUT ∼ Sensitivity × B + VOQ

Filter Frequency ADC-READOUT RANGE

80 Hz −3968...3967

160 Hz −1985...1985

500 Hz −5292...5290

1 kHz −2646...2645

2 kHz −1512...1511

–2000

–1500

–1000

–500

500

1000

1500

2000

–200–150–100 –50 0 50 100 150 200 mT

ADC-

READOUT

Range 150 mT

Filter = 2 kHz

Range 90 mT

Range 60 mT

Range 30 mT

Fig. 2–6: Typical ADC-READOUT

versus magnetic field for filter = 2 kHz

HAL 805 DATA SHEET

8June 24, 2004; 6251-513-2DS Micronas

Note: During application design, it should be taken

into consideration that the maximum and mini-

mum ADC-READOUT is not exceeded during

calibration and operation of the Hall IC. Conse-

quently, the maximum and minimum magnetic

fields that may occur in the operational range

of a specific application should not saturate the

A/D converter. Please note that the A/D con-

verter saturates at magnetic fields well above,

respectively below, the magnetic range limits.

This large safety band between specified mag-

netic range and true operational range helps to

avoid any saturation.

Range

The RANGE bits are the three lowest bits of the MODE

D converter.

Filter

The FILTER bits are the three highest bits of the

MODE register; they define the −3 dB frequency of the

digital low pass filter.

TC and TCSQ

The temperature dependence of the magnetic sensitiv-

ity can be adapted to different magnetic materials in

order to compensate for the change of the magnetic

strength with temperature. The adaption is done by

programming the TC (Temperature Coefficient) and

the TCSQ registers (Quadratic Temperature Coeffi-

cient). Thereby, the slope and the curvature of the

temperature dependence of the magnetic sensitivity

can be matched to the magnet and the sensor assem-

bly. As a result, the output voltage characteristic can

be fixed over the full temperature range. The sensor

can compensate for linear temperature coefficients

ranging from about −3100 ppm/K up to 400 ppm/K and

quadratic coefficients from about −5 ppm/K² to 5 ppm/

K². Please refer to Section 4.3. on page 22 for the rec-

ommended settings for different linear temperature

coefficients.

Sensitivity

The SENSITIVITY register contains the parameter for

the multiplier in the DSP. The Sensitivity is program-

mable between −4 and 4. For VDD = 5 V, the register

can be changed in steps of 0.00049. Sensitivity = 1

corresponds to an increase of the output voltage by

VDD if the ADC-READOUT increases by 2048.

For all calculations, the digital value from the magnetic

field of the A/D converter is used. This digital informa-

tion is readable from the ADC-READOUT register.

VOQ

The VOQ register contains the parameter for the adder

in the DSP. VOQ is the output voltage without external

magnetic field (B = 0 mT, respectively ADC-READ-

OUT = 0) and programmable from −VDD up to VDD. For

VDD = 5 V, the register can be changed in steps of

4.9 mV.

Note: If VOQ is programmed to a negative voltage, the

maximum output voltage is limited to:

For calibration in the system environment, a 2-point

adjustment procedure (see Section 2.3.) is recom-

mended. The suitable Sensitivity and VOQ values for

each sensor can be calculated individually by this pro-

cedure.

Magnetic Field Range RANGE

−30 mT...30 mT 0

−40 mT...40 mT 4

−60 mT...60 mT 5

−75 mT...75 mT 1

−80 mT...80 mT 6

−90 mT...90 mT 2

−100 mT...100 mT 7

−150 mT...150 mT 3

−3 dB Frequency FILTER

80 Hz 0

160 Hz 1

500 Hz 2

1 kHz 3

2 kHz 4

∆VOUT * 2048

∆ADC-READOUT * VDD

Sensitivity =

VOUTmax = VOQ + VDD

DATA SHEET HAL 805

Micronas June 24, 2004; 6251-513-2DS 9

Clamping Voltage

The output voltage range can be clamped in order to

detect failures like shorts to VDD or GND or an open

circuit.

The CLAMP-LOW register contains the parameter for

the lower limit. The lower clamping voltage is program-

mable between 0 V and VDD/2. For VDD = 5 V, the reg-

ister can be changed in steps of 2.44 mV.

The CLAMP-HIGH register contains the parameter for

the upper limit. The upper clamping voltage is pro-

grammable between 0 V and VDD. For VDD = 5 V, in

steps of 2.44 mV.

LOCKR

By setting this 1-bit register, all registers will be locked,

and the sensor will no longer respond to any supply

voltage modulation. This bit is active after the first

power-off and power-on sequence after setting the

LOCK bit.

Warning: This register cannot be reset!

ADC-READOUT

This 14-bit register delivers the actual digital value of

the applied magnetic field before the signal process-

ing. This register can be read out and is the basis for

the calibration procedure of the sensor in the system

environment.

2.3. Calibration Procedure

2.3.1. General Procedure

For calibration in the system environment, the applica-

tion kit from Micronas is recommended. It contains the

hardware for the generation of the serial telegram for

programming and the corresponding software for the

input of the register values.

In this section, programming of the sensor using this

programming tool is explained. Please refer to

Section 5. on page 24 for information about program-

ming without this tool.

For the individual calibration of each sensor in the cus-

tomer application, a two point adjustment is recom-

mended (see Fig. 2–7 for an example). When using

the application kit, the calibration can be done in three

steps:

Step 1: Input of the registers which need not be

adjusted individually

The magnetic circuit, the magnetic material with its

temperature characteristics, the filter frequency, and

low and high clamping voltage are given for this appli-

cation.

Therefore, the values of the following registers should

be identical for all sensors of the customer application.

–FILTER

(according to the maximum signal frequency)

–RANGE

(according to the maximum magnetic field at the

sensor position)

– TC and TCSQ

(depends on the material of the magnet and the

other temperature dependencies of the application)

– CLAMP-LOW and CLAMP-HIGH

(according to the application requirements)

Write the appropriate settings into the HAL805 regis-

ters.

HAL 805 DATA SHEET

10 June 24, 2004; 6251-513-2DS Micronas

Step 2: Calculation of VOQ and Sensitivity

The calibration points 1 and 2 can be set inside the

specified range. The corresponding values for VOUT1

and VOUT2 result from the application requirements.

For highest accuracy of the sensor, calibration points

near the minimum and maximum input signal are rec-

ommended. The difference of the output voltage

between calibration point 1 and calibration point 2

should be more than 3.5 V.

Set the system to calibration point 1 and read the reg-

ister ADC-READOUT. The result is the value ADC-

READOUT1.

Now, set the system to calibration point 2, read the

ADC-READOUT2.

With these values and the target values VOUT1 and

VOUT2, for the calibration points 1 and 2, respectively,

the values for Sensitivity and VOQ are calculated as:

This calculation has to be done individually for each

sensor.

Next, write the calculated values for Sensitivity and

VOQ into the IC for adjusting the sensor.

The sensor is now calibrated for the customer applica-

tion. However, the programming can be changed

again and again if necessary.

Step 3: Locking the Sensor

The last step is activating the LOCK function with the

“LOCK” command. Please note that the LOCK function

becomes effective after power-down and power-up of

the Hall IC. The sensor is now locked and does not

respond to any programming or reading commands.

Warning: This register cannot be reset!

2.3.2. Calibration of the Angle Sensor

The following description explains the calibration pro-

cedure using an angle sensor as an example. The

required output characteristic is shown in Fig. 2–7.

– the angle range is from −25° to 25°

– temperature coefficient of the magnet: −500 ppm/K

Low clamping voltage ≤ VOUT1,2 ≤ High clamping voltage

VOUT1 − VOUT2

ADC-READOUT1 − ADC-READOUT2

Sensitivity = VDD

2048

ADC-READOUT1 * Sensitivity * VDD

2048

VOQ = VOUT1 −

–30 –20 –10 0 10 20 30 °

Angle

OUT

Clamp-high = 4.5 V

Clamp-low = 0.5 V

Calibration point 2

Calibration point 1

Fig. 2–7: Example for output characteristics

DATA SHEET HAL 805

Micronas June 24, 2004; 6251-513-2DS 11

Step 1: Input of the registers which need not be

adjusted individually

The register values for the following registers are given

for all applications:

–FILTER

Select the filter frequency: 500 Hz

–RANGE

Select the magnetic field range: 30 mT

–TC

For this magnetic material: 6

–TCSQ

For this magnetic material: 14

– CLAMP-LOW

For our example: 0.5 V

– CLAMP-HIGH

For our example: 4.5 V

Enter these values in the software, and use the “write

and store” command for permanently writing the val-

ues in the registers.

Step 2: Calculation of VOQ and Sensitivity

There are two ways to calculate the values for VOQ

and Sensitivity.

Manual Calculation:

Set the system to calibration point 1 (angle 1 = −25°)

and read the register ADC-READOUT. For our exam-

ple, the result is ADC-READOUT1 = −2500.

Next, set the system to calibration point 2 (angle 2 =

25°), and read the register ADC-READOUT again. For

our example, the result is ADC-READOUT2 = +2350.

With these measurements and the targets VOUT1 =

4.5 V and VOUT2 = 0.5 V, the values for Sensitivity and

VOQ are calculated as

Software Calibration:

Use the menu CALIBRATE from the PC software and

enter the values 4.5 V for VOUT1 and 0.5 V for VOUT2.

Set the system to calibration point 1 (angle 1 = −25°),

hit the button “Read ADC-Readout1”, set the system to

calibration point 2 (angle 2 = 25°), hit the button “Read

ADC-Readout2”, and hit the button “Calculate”. The

software will then calculate the appropriate VOQ and

Sensitivity.

This calculation has to be done individually for each

sensor. Now, write the calculated values with the “write

and store” command into the HAL805 for program-

ming the sensor.

Step 3: Locking the Sensor

The last step is activating the LOCK function with the

“LOCK” command. Please note that the LOCK function

becomes effective after power-down and power-up of

the Hall IC. The sensor is now locked and does not

respond to any programming or reading commands.

Warning: This register cannot be reset!

4.5 V − 0.5 V

−2500 − 2350

Sensitivity = 5V

2048

*=−0.3378

VOQ = 4.5 V −2048

−2500 * (−0.3378) * 5 V = 2.438 V

HAL 805 DATA SHEET

12 June 24, 2004; 6251-513-2DS Micronas

3. Specifications

3.1. Outline Dimensions

Fig. 3–1:

TO92UT-2: Plastic Transistor Standard UT package, 3 leads

Weight approximately 0.12 g

DATA SHEET HAL 805

Micronas June 24, 2004; 6251-513-2DS 13

Fig. 3–2:

TO92UT-1: Plastic Transistor Standard UT package, 3 leads, spread

Weight approximately 0.12 g

HAL 805 DATA SHEET

14 June 24, 2004; 6251-513-2DS Micronas

Fig. 3–3:

TO92UT-2: Dimensions ammopack inline

DATA SHEET HAL 805

Micronas June 24, 2004; 6251-513-2DS 15

Fig. 3–4:

TO92UT-1: Dimensions ammopack inline, spread

HAL 805 DATA SHEET

16 June 24, 2004; 6251-513-2DS Micronas

3.2. Dimensions of Sensitive Area

0.25 mm x 0.25 mm

3.3. Position of Sensitive Areas

3.4. Absolute Maximum Ratings

Stresses beyond those listed in the “Absolute Maximum Ratings” may cause permanent damage to the device. This

is a stress rating only. Functional operation of the device at these conditions is not implied. Exposure to absolute

maximum rating conditions for extended periods will affect device reliability.

This device contains circuitry to protect the inputs and outputs against damage due to high static voltages or electric

fields; however, it is advised that normal precautions be taken to avoid application of any voltage higher than abso-

lute maximum-rated voltages to this circuit.

All voltages listed are referenced to ground (GND).

TO92UT-1/-2

x center of the package

y 1.5 mm nominal

Bd 0.3 mm

Symbol Parameter Pin No. Min. Max. Unit

VDD Supply Voltage 1 −8.5 8.5 V

VDD Supply Voltage 1 −14.41) 2) 14.41) 2) V

−IDD Reverse Supply Current 1 −501) mA

VOUT Output Voltage 3 −55)

−55) 8.53)

14.43) 2) V

VOUT − VDD Excess of Output Voltage

over Supply Voltage

3,1 −2V

IOUT Continuous Output Current 3 −10 10 mA

tSh Output Short Circuit Duration 3 −10 min

TJJunction Temperature Range −−40

−40 1704)

150 °C

°C

NPROG Number of Programming Cycles −−100

1) as long as TJmax is not exceeded

2) t < 10 min (VDDmin = −15 V for t < 1 min, VDDmax = 16 V for t < 1 min)

3) as long as TJmax is not exceeded, output is not protected to external 14 V-line (or to −14 V)

4) t < 1000h

5) internal protection resistor = 100 Ω

DATA SHEET HAL 805

Micronas June 24, 2004; 6251-513-2DS 17

3.4.1. Storage and Shelf Life

The permissible storage time (shelf life) of the sensors is unlimited, provided the sensors are stored at a maximum of

30 °C and a maximum of 85% relative humidity. At these conditions, no Dry Pack is required.

Solderability is guaranteed for one year from the date code on the package. Solderability has been tested after stor-

ing the devices for 16 hours at 155 °C. The wettability was more than 95%.

3.5. Recommended Operating Conditions

Functional operation of the device beyond those indicated in the “Recommended Operating Conditions/Characteris-

tics” is not implied and may result in unpredictable behavior of the device and may reduce reliability and lifetime.

All voltages listed are referenced to ground (GND).

3.6. Characteristics

at TJ = −40 °C to +170 °C, VDD = 4.5 V to 5.5 V, GND = 0 V after programming,

at Recommended Operation Conditions if not otherwise specified in the column “Conditions”.

Typical Characteristics for TJ = 25 °C and VDD = 5 V.

Symbol Parameter Pin No. Min. Typ. Max. Unit

VDD Supply Voltage 1 4.5 5 5.5 V

IOUT Continuous Output Current 3 −1−1mA

RLLoad Resistor 3 4.5 −−kΩ

CLLoad Capacitance 3 0.33 10 1000 nF

Symbol Parameter Pin No. Min. Typ. Max. Unit Test Conditions

IDD Supply Current

over Temperature Range 1−710mA

VDDZ Overvoltage Protection

at Supply 1−17.5 20 V IDD = 25 mA, TJ = 25 °C, t = 20 ms

VOZ Overvoltage Protection

at Output 3−17 19.5 V IO = 10 mA, TJ = 25 °C, t = 20 ms

Resolution 3 −12 −bit ratiometric to VDD1)

INL Non-Linearity of Output Voltage

over Temperature 3−0.5 0 0.5 % % of supply voltage2)

ERRatiometric Error of Output

over Temperature

(Error in VOUT / VDD)

3−0.5 0 0.5 %  VOUT1 - VOUT2 > 2V

during calibration procedure

Ratiometricy of Output

over Temperature 3 99.95 100 100.05 %  VOUT1 - VOUT2 > 2V

during calibration procedure

∆TKVariation of Linear Temperature

Coefficient 3−400 0 400 ppm/k if TC and TCSQ suitable for the

application

1) Output DAC full scale = 5 V ratiometric, Output DAC offset = 0 V, Output DAC LSB = VDD/4096

2) if more than 50% of the selected magnetic field range are used and the temperature compensation is suitable

VOUT VDD

()

VDD

----------------------------- VOUT VDD 5 V=()

5 V

---------------------------------------------

⁄=

HAL 805 DATA SHEET

18 June 24, 2004; 6251-513-2DS Micronas

3.7. Magnetic Characteristics

at TJ = −40 °C to +170 °C, VDD = 4.5 V to 5.5 V, GND = 0 V after programming,

at Recommended Operation Conditions if not otherwise specified in the column “Conditions”.

Typical Characteristics for TJ = 25 °C and VDD = 5 V.

∆VOUTCL Accuracy of Output Voltage at

Clamping Low Voltage over

Temperature Range

3−45 0 45 mV RL = 4.7 kΩ, VDD = 5 V

∆VOUTCH Accuracy of Output Voltage at

Clamping High Voltage over

Temperature Range

3−45 0 45 mV RL = 4.7 kΩ, VDD = 5 V

VOUTH Output High Voltage 3 4.65 4.8 −V V

DD = 5 V, −1 mA ≤ IOUT ≤ 1mA

VOUTL Output Low Voltage 3 −0.2 0.35 V VDD = 5 V, −1 mA ≤ IOUT ≤ 1mA

fADC Internal ADC Frequency over

Temperature Range −110 128 150 kHz VDD = 4.5 V to 8.5 V

tr(O) Response Time of Output 3 −5

3 dB Filter frequency = 80 Hz

3 dB Filter frequency = 160 Hz

3 dB Filter frequency = 500 Hz

3 dB Filter frequency = 2 kHz

CL = 10 nF, time from 10% to 90% of

final output voltage for a steplike

signal Bstep from 0 mT to Bmax

td(O) Delay Time of Output 3 −0.1 0.5 ms CL = 10 nF

tPOD Power-Up Time (Time to reach

stabilized Output Voltage) −−6

3 dB Filter frequency = 80 Hz

3 dB Filter frequency = 160 Hz

3 dB Filter frequency = 500 Hz

3 dB Filter frequency = 2 kHz

CL = 10 nF, 90% of VOUT

BW Small Signal Bandwidth (−3dB) 3 −2−kHz BAC < 10 mT;

3 dB Filter frequency = 2 kHz

VOUTn Noise Output Voltagepp 3−3 6 mV magnetic range = 90 mT1)

3 dB Filter frequency = 80 Hz

Sensitivity ≤ 0.26

ROUT Output Resistance over

Recommended Operating Range 3−110ΩVOUTLmax ≤ VOUT ≤ VOUTHmin

RthJA

TO92UT-1,

TO92UT-2

Thermal Resistance Junction to

Soldering Point −−150 200 K/W

1) peak-to-peak value exceeded: 5%

Symbol Parameter Pin No. Min. Typ. Max. Unit Test Conditions

BOffset Magnetic Offset 3 −0.5 0 0.5 mT B = 0 mT, IOUT = 0 mA, TJ = 25 °C

unadjusted sensor

∆BOffset/∆T Magnetic Offset Change

due to TJ

−10 0 10 µT/K B = 0 mT, IOUT = 0 mA

DATA SHEET HAL 805

Micronas June 24, 2004; 6251-513-2DS 19

3.8. Open Circuit Detection

at TJ = −40 °C to +170 °C, Typical Characteristics for TJ = 25 °C

Symbol Parameter Pin No. Min. Typ. Max. Unit Test Conditions

VOUT Output voltage

at open VDD line 3000.2VV

DD = 5 V

RL = 10 kΩ to GND

VOUT Output voltage at

open GND line 34.74.85VV

DD = 5 V

RL = 10 kΩ to GND

HAL 805 DATA SHEET

20 June 24, 2004; 6251-513-2DS Micronas

3.9. Typical Characteristics

–20

–15

–10

–5

–15 –10 –5 0 5 10 15 20 V

VDD

IDD

TA = –40 °C

TA = 25 °C

TA=150 °C

Fig. 3–5: Typical current consumption

versus supply voltage

–50 0 50 100 150 200 °C

IDD

VDD = 5 V

Fig. 3–6: Typical current consumption

versus ambient temperature

–1.5 –1.0 –0.5 0.0 0.5 1.0 1.5 mA

IOUT

IDD

TA = 25 °C

VDD = 5 V

Fig. 3–7: Typical current consumption

versus output current

–40

–35

–30

–25

–20

–15

–10

–5

10 100 1000 10000 Hz

fsignal

VOUT –3

Filter: 80 Hz

Filter: 160 Hz

Filter: 500 Hz

Filter: 2 kHz

Fig. 3–8: Typical output voltage

versus signal frequency

DATA SHEET HAL 805

Micronas June 24, 2004; 6251-513-2DS 21

–1

–0.8

–0.6

–0.4

–0.2

–0.0

0.2

0.4

0.6

0.8

1.0

45678

VDD

VOUT/VDD = 0.82

VOUT/VDD = 0.66

VOUT/VDD = 0.34

VOUT/VDD = 0.18

VOUT/VDD = 0.5

Fig. 3–9: Typical ratiometric error

versus supply voltage

100

120

–50 0 50 100 150 200°C

1/sensitivity

TC = 16, TCSQ = 8

TC = 0, TCSQ = 12

TC = –20, TCSQ = 12

TC = –31, TCSQ = 0

Fig. 3–10: Typical 1/sensitivity

versus ambient temperature

–1

–0.8

–0.6

–0.4

–0.2

–0.0

0.2

0.4

0.6

0.8

1.0

–50 0 50 100 150 200°C

BOffset

TC = 16, TCSQ = 8

TC = 0, TCSQ = 12

TC = –20, TCSQ = 12

Fig. 3–11: Typical magnetic offset

versus ambient temperature

–1

–0.8

–0.6

–0.4

–0.2

–0.0

0.2

0.4

0.6

0.8

1.0

–40 –20 0 20 40 mT

INL

Range = 30 mT

Fig. 3–12: Typical nonlinearity

versus magnetic field

HAL 805 DATA SHEET

22 June 24, 2004; 6251-513-2DS Micronas

4. Application Notes

4.1. Application Circuit

For EMC protection, it is recommended to connect one

ceramic 4.7 nF capacitor each between ground and

the supply voltage, respectively the output voltage pin.

In addition, the input of the controller unit should be

pulled-down with a 4.7 kOhm resistor and a ceramic

4.7 nF capacitor.

Please note that during programming, the sensor will

be supplied repeatedly with the programming voltage

of 12.5 V for 100 ms. All components connected to the

VDD line at this time must be able to resist this voltage.

Fig. 4–1: Recommended application circuit

4.2. Use of two HAL805 in Parallel

Two different HAL805 sensors which are operated in

parallel to the same supply and ground line can be

programmed individually. In order to select the IC

which should be programmed, both Hall ICs are inacti-

vated by the “Deactivate” command on the common

supply line. Then, the appropriate IC is activated by an

“Activate” pulse on its output. Only the activated sen-

sor will react to all following read, write, and program

commands. If the second IC has to be programmed,

the “Deactivate” command is sent again, and the sec-

ond IC can be selected.

Fig. 4–2: Parallel operation of two HAL 805

4.3. Temperature Compensation

The relationship between the temperature coefficient

of the magnet and the corresponding TC and TCSQ

codes for linear compensation is given in the following

table. In addition to the linear change of the magnetic

field with temperature, the curvature can be adjusted

as well. For this purpose, other TC and TCSQ combi-

nations are required which are not shown in the table.

Please contact Micronas for more detailed information

on this higher order temperature compensation.

The HAL810, HAL815, and HAL805 contain the same

temperature compensation circuits. If an optimal set-

ting for the HAL810, HAL815 is already available, the

same settings may be used for the HAL805.

OUT

VDD

GND

4.7 nF HAL805

4.7 kΩ

µC

4.7 nF 4.7 nF

HAL 805

GND

10 nF

HAL 805

4.7 nF 4.7 nF

Sensor A Sensor B

VDD

OUT B & Select B

OUT A & Select A

Temperature

Coefficient of

Magnet (ppm/K)

TC TCSQ

400 31 6

300 28 7

200 24 8

100 21 9

01810

−50 17 10

−90 16 11

−130 15 11

−170 14 11

−200 13 12

−240 12 12

−280 11 12

−320 10 13

−360 9 13

−410 8 13

−450 7 13

−500 6 14

−550 5 14

−600 4 14

−650 3 14

−700 2 15

−750 1 15

DATA SHEET HAL 805

Micronas June 24, 2004; 6251-513-2DS 23

4.4. Undervoltage Behavior

In a voltage range below 4.5 V to approximately 3.5 V,

the operation of the HAL805 is typically given and pre-

dictable for the most sensors. Some of the parameters

may be out of the specification. Below about 3.5 V, the

digital processing is reset. If the supply voltage once

again rises above about 3.5 V, a startup time of about

20 µs elapses for the digital processing to occur. As

long as the supply voltage is still above about 3.2 V,

the analog output is kept at its last valid value ratiomet-

ric to VDD. Below about 3 V, the entire sensor will reset.

4.5. Ambient Temperature

Due to the internal power dissipation, the temperature

on the silicon chip (junction temperature TJ) is higher

than the temperature outside the package (ambient

temperature TA).

TJ = TA + ∆T

At static conditions and continuous operation, the fol-

lowing equation applies:

∆T = IDD * VDD * RthJA

For typical values, use the typical parameters. For

worst case calculation, use the max. parameters for

IDD and Rth, and the max. value for VDD from the appli-

cation.

For VDD = 5.5 V, Rth = 200 K/W and IDD = 10 mA the

temperature difference ∆T = 11 K.

For all sensors, the junction temperature TJ is speci-

fied. The maximum ambient temperature TAmax can be

calculated as:

TAmax = TJmax −∆T

4.6. EMC and ESD

The HAL805 is designed for a stabilized 5 V supply.

Interferences and disturbances conducted along the

12 V onboard system (product standard ISO 7637

part 1) are not relevant for these applications.

For applications with disturbances by capacitive or

inductive coupling on the supply line or radiated distur-

bances, the application circuit shown in Fig. 4–1 is rec-

ommended. Applications with this arrangement

passed the EMC tests according to the product stan-

dards ISO 7637 part 3 (Electrical transient transmis-

sion by capacitive or inductive coupling) and part 4

(Radiated disturbances).

Please contact Micronas for the detailed investigation

reports with the EMC and ESD results.

−810 0 15

−860 −116

−910 −216

−960 −316

−1020 −417

−1070 −517

−1120 −617

−1180 −718

−1250 −818

−1320 −919

−1380 −10 19

−1430 −11 20

−1500 −12 20

−1570 −13 20

−1640 −14 21

−1710 −15 21

−1780 −16 22

−1870 −17 22

−1950 −18 23

−2030 −19 23

−2100 −20 24

−2180 −21 24

−2270 −22 25

−2420 −24 26

−2500 −25 27

−2600 −26 27

−2700 −27 28

−2800 −28 28

−2900 −29 29

−3000 −30 30

−3100 −31 31

Temperature

Coefficient of

Magnet (ppm/K)

TC TCSQ

HAL 805 DATA SHEET

24 June 24, 2004; 6251-513-2DS Micronas

5. Programming of the Sensor

5.1. Definition of Programming Pulses

The sensor is addressed by modulating a serial tele-

gram on the supply voltage. The sensor answers with a

serial telegram on the output pin.

The bits in the serial telegram have a different bit time

for the VDD-line and the output. The bit time for the

VDD-line is defined through the length of the Sync Bit

at the beginning of each telegram. The bit time for the

output is defined through the Acknowledge Bit.

A logical “0” is coded as no voltage change within the

bit time. A logical “1” is coded as a voltage change

between 50% and 80% of the bit time. After each bit, a

voltage change occurs.

5.2. Definition of the Telegram

Each telegram starts with the Sync Bit (logical 0), 3

bits for the Command (COM), the Command Parity Bit

(CP), 4 bits for the Address (ADR), and the Address

Parity Bit (AP).

There are 4 kinds of telegrams:

– Write a register (see Fig. 5–2)

After the AP Bit, follow 14 Data Bits (DAT) and the

Data Parity Bit (DP). If the telegram is valid and the

command has been processed, the sensor answers

with an Acknowledge Bit (logical 0) on the output.

– Read a register (see Fig. 5–3)

After evaluating this command, the sensor answers

with the Acknowledge Bit, 14 Data Bits, and the

Data Parity Bit on the output.

– Programming the EEPROM cells (see Fig. 5–4)

After evaluating this command, the sensor answers

with the Acknowledge Bit. After the delay time tw,

the supply voltage rises up to the programming volt-

age.

– Activate a sensor (see Fig. 5–5)

If more than one sensor is connected to the supply

line, selection can be done by first deactivating all

sensors. The output of all sensors will be pulled to

ground by the internal 10 kΩ resistors. With an Acti-

vate pulse on the appropriate output pin, an individ-

ual sensor can be selected. All following commands

will only be accepted from the activated sensor.

Fig. 5–1: Definition of logical 0 and 1 bit

trtf

tp0 tp0

logical 0

VDDH

VDDL

tp0

logical 1

VDDH

VDDL

or tp0

tp1

Table 5–1: Telegram parameters

Symbol Parameter Pin Min. Typ. Max. Unit Remarks

VDDL Supply Voltage for Low Level

during Programming 155.66V

VDDH Supply Voltage for High Level

during Programming 1 6.8 8.0 8.5 V

trRise time 1 0.05 ms

tfFall time 1 0.05 ms

tp0 Bit time on VDD 1 1.7 1.75 1.8 ms tp0 is defined through the Sync Bit

tpOUT Bit time on output pin 3234mst

pOUT is defined through the

Acknowledge Bit

tp1 Voltage Change for logical 1 1, 3 50 65 80 % % of tp0 or tpOUT

VDDPROG Supply Voltage for

Programming the EEPROM 1 12.4 12.5 12.6 V

tPROG Programming Time for EEPROM 1 95 100 105 ms

trp Rise time of programming voltage 1 0.2 0.5 1 ms

DATA SHEET HAL 805

Micronas June 24, 2004; 6251-513-2DS 25

Fig. 5–2: Telegram for coding a Write command

Fig. 5–3: Telegram for coding a Read command

Fig. 5–4: Telegram for coding the EEPROM programming

Fig. 5–5: Activate pulse

tfp Fall time of programming voltage 1 0 1 ms

twDelay time of programming voltage

after Acknowledge 10.50.71ms

Vact Voltage for an Activate pulse 3345V

tact Duration of an Activate pulse 3 0.05 0.1 0.2 ms

Table 5–1: Telegram parameters, continued

Symbol Parameter Pin Min. Typ. Max. Unit Remarks

Sync COM CP ADR AP DAT DP

Acknowledge

VDD

VOUT

WRITE

Sync COM CP ADR AP

DAT DPAcknowledge

VDD

VOUT

READ

Sync COM CP ADR AP

tPROG

Acknowledge

VDD

VOUT

ERASE, PROM, and LOCK

trp tfp

VDDPROG

tACT

VOUT

trtf

VACT

HAL 805 DATA SHEET

26 June 24, 2004; 6251-513-2DS Micronas

5.3. Telegram Codes

Sync Bit

Each telegram starts with the Sync Bit. This logical “0”

pulse defines the exact timing for tp0.

Command Bits (COM)

The Command code contains 3 bits and is a binary

number. Table 5–2 shows the available commands and

the corresponding codes for the HAL805.

Command Parity Bit (CP)

This parity bit is “1” if the number of zeros within the 3

Command Bits is uneven. The parity bit is “0”, if the

number of zeros is even.

Address Bits (ADR)

The Address code contains 4 bits and is a binary num-

ber. Table 5–3 shows the available addresses for the

HAL805 registers.

Address Parity Bit (AP)

This parity bit is “1” if the number of zeros within the 4

Address bits is uneven. The parity bit is “0” if the num-

ber of zeros is even.

Data Bits (DAT)

The 14 Data Bits contain the register information.

The registers use different number formats for the Data

Bits. These formats are explained in Section 5.4.

In the Write command, the last bits are valid. If, for

example, the TC register (6 bits) is written, only the last

6 bits are valid.

In the Read command, the first bits are valid. If, for

example, the TC register (6 bits) is read, only the first 6

bits are valid.

Data Parity Bit (DP)

This parity bit is “1” if the number of zeros within the

binary number is even. The parity bit is “0” if the num-

ber of zeros is uneven.

Acknowledge

After each telegram, the output answers with the

Acknowledge signal. This logical “0” pulse defines the

exact timing for tpOUT

Table 5–2: Available commands

Command Code Explanation

READ 2 read a register

WRITE 3 write a register

PROM 4 program all nonvolatile registers (except the lock bits)

ERASE 5 erase all nonvolatile registers (except the lock bits)

LOCK 7 lock the whole device and switch permanently to the analog-mode

DATA SHEET HAL 805

Micronas June 24, 2004; 6251-513-2DS 27

5.4. Number Formats

Binary number:

The most significant bit is given as first, the least signif-

icant bit as last digit.

Example: 101001 represents 41 decimal.

Signed binary number:

The first digit represents the sign of the following

binary number (1 for negative, 0 for positive sign).

Example: 0101001 represents +41 decimal

1101001 represents −41 decimal

Two-complementary number:

The first digit of positive numbers is “0”, the rest of the

number is a binary number. Negative numbers start

with “1”. In order to calculate the absolute value of the

number, calculate the complement of the remaining

digits and add “1”.

Example: 0101001 represents +41 decimal

1010111 represents −41 decimal

Micronas registers (read only for customers)

Table 5–3: Available register addresses

Bits Format Customer Remark

CLAMP-LOW 1 10 binary read/write/program Low clamping voltage

CLAMP-HIGH 2 11 binary read/write/program High clamping voltage

VOQ 3 11 two compl.

binary read/write/program

SENSITIVITY 4 14 signed binary read/write/program

MODE 5 6 binary read/write/program Range and filter settings

LOCKR 6 1 binary lock Lock Bit

ADC-READOUT 7 14 two compl.

binary

read

TC 11 6 signed binary read/write/program

TCSQ 12 5 binary read/write/program

DEACTIVATE 15 12 binary write Deactivate the sensor

Bits Format Remark

OFFSET 8 5 two compl. binary ADC offset adjustment

FOSCAD 9 5 binary Oscillator frequency adjustment

SPECIAL 13 8 special settings

HAL 805 DATA SHEET

28 June 24, 2004; 6251-513-2DS Micronas

5.5. Register Information

CLAMP-LOW

– The register range is from 0 up to 1023.

– The register value is calculated by:

CLAMP-HIGH

– The register range is from 0 up to 2047.

– The register value is calculated by:

VOQ

– The register range is from −1024 up to 1023.

– The register value is calculated by:

SENSITIVITY

– The register range is from −8192 up to 8191.

– The register value is calculated by:

TC and TCSQ

– The TC register range is from −31 up to 31.

– The TCSQ register range is from 0 up to 31.

Please refer Section 4.2. on page 22 for the recom-

mended values.

MODE

– The register range is from 0 up to 63 and contains

the settings for FILTER and RANGE:

Please refer Section 2.2. on page 7 for the available

FILTER and RANGE values.

ADC-READOUT

– This register is read only.

– The register range is from −8192 up to 8191.

DEACTIVATE

– This register can only be written.

– The register has to be written with 2063 decimal

(80F hexadecimal) for the deactivation.

– The sensor can be reset with an Activate pulse on

the output pin or by switching off and on the supply

voltage.

5.6. Programming Information

If the content of any register (except the lock registers)

is to be changed, the desired value must first be writ-

ten into the corresponding RAM register. Before read-

ing out the RAM register again, the register value must

be permanently stored in the EEPROM.

Permanently storing a value in the EEPROM is done

by first sending an ERASE command followed by

sending a PROM command. The address within the

ERASE and PROM commands is not important.

ERASE and PROM act on all registers in parallel.

If all HAL805 registers are to be changed, all writing

commands can be sent one after the other, followed by

sending one ERASE and PROM command at the end.

During all communication sequences, the customer

has to check if the communication with the sensor was

successful. This means that the acknowledge and the

parity bits sent by the sensor have to be checked by

the customer. If the Micronas programmer board is

used, the customer has to check the error flags sent

from the programmer board.

Note: For production and qualification tests, it is rec-

ommended to set the LOCK bit after final adjust-

ment and programming of HAL805. The LOCK

function is active after the next power-up of the

sensor. Micronas also recommends sending an

additional ERASE command after sending the

LOCK command.

The success of the Lock Process should be

checked by reading at least one sensor register

after locking and/or by an analog check of the

sensors output signal.

Electrostatic Discharges (ESD) may disturb the

programming pulses. Please take precautions

against ESD.

Low Clamping Voltage

VDD * 2048CLAMP-LOW =

High Clamping Voltage

VDD * 2048CLAMP-HIGH =

VOQ

VDD * 1024VOQ =

Sensitivity * 2048SENSITIVITY =

MODE = FILTER * 8 + RANGE

DATA SHEET HAL 805

Micronas June 24, 2004; 6251-513-2DS 29

All information and data contained in this data sheet are without any

commitment, are not to be considered as an offer for conclusion of a

contract, nor shall they be construed as to create any liability. Any new

issue of this data sheet invalidates previous issues. Product availability

and delivery are exclusively subject to our respective order confirmation

form; the same applies to orders based on development samples deliv-

ered. By this publication, Micronas GmbH does not assume responsibil-

ity for patent infringements or other rights of third parties which may

result from its use.

Further, Micronas GmbH reserves the right to revise this publication

and to make changes to its content, at any time, without obligation to

notify any person or entity of such revisions or changes.

No part of this publication may be reproduced, photocopied, stored on a

retrieval system, or transmitted without the express written consent of

Micronas GmbH.

HAL 805 DATA SHEET

30 June 24, 2004; 6251-513-2DS Micronas

Micronas GmbH

Hans-Bunte-Strasse 19

D-79108 Freiburg (Germany)

P.O. Box 840

D-79008 Freiburg (Germany)

Tel. +49-761-517-0

Fax +49-761-517-2174

E-mail: docservice@micronas.com

Internet: www.micronas.com

Printed in Germany

Order No. 6251-513-2DS

6. Data Sheet History

1. Data Sheet: “HAL 805 Programmable Linear Hall

Effect Sensor”, Aug. 16, 2002, 6251-513-1DS. First

release of the data sheet.

2. Data Sheet: “HAL 805 Programmable Linear Hall

Effect Sensor”, June 24, 2004, 6251-513-2DS. Sec-

ond release of the data sheet. Major changes:

– new package diagram for TO92UT-1

– package diagram for TO92UT-2 added

– ammopack diagrams for TO92UT-1/-2 added