DATA SHEET MICRONAS Edition June 24, 2004 6251-513-2DS HAL805 Programmable Linear Hall Effect Sensor MICRONAS HAL 805 DATA SHEET Contents Page Section Title 3 3 3 4 4 4 4 4 4 1. 1.1. 1.2. 1.3. 1.3.1. 1.4. 1.5. 1.6. 1.7. Introduction Major Applications Features Marking Code Special Marking of Prototype Parts Operating Junction Temperature Range (TJ) Hall Sensor Package Codes Solderability Pin Connections and Short Descriptions 5 5 7 9 9 10 2. 2.1. 2.2. 2.3. 2.3.1. 2.3.2. Functional Description General Function Digital Signal Processing and EEPROM Calibration Procedure General Procedure Calibration of the Angle Sensor 12 12 16 16 16 17 17 17 18 19 20 3. 3.1. 3.2. 3.3. 3.4. 3.4.1. 3.5. 3.6. 3.7. 3.8. 3.9. Specifications Outline Dimensions Dimensions of Sensitive Area Position of Sensitive Areas Absolute Maximum Ratings Storage and Shelf Life Recommended Operating Conditions Characteristics Magnetic Characteristics Open Circuit Detection Typical Characteristics 22 22 22 22 23 23 23 4. 4.1. 4.2. 4.3. 4.4. 4.5. 4.6. Application Notes Application Circuit Use of two HAL805 in Parallel Temperature Compensation Undervoltage Behavior Ambient Temperature EMC and ESD 24 24 24 26 27 28 28 5. 5.1. 5.2. 5.3. 5.4. 5.5. 5.6. Programming of the Sensor Definition of Programming Pulses Definition of the Telegram Telegram Codes Number Formats Register Information Programming Information 30 6. Data Sheet History 2 June 24, 2004; 6251-513-2DS Micronas HAL 805 DATA SHEET easily be done with a PC and the application kit from Micronas. Programmable Linear Hall Effect Sensor Release Note: Revision bars indicate significant changes to the previous edition. 1. Introduction The HAL805 is a recent member of the Micronas family of programmable linear Hall sensors. It offers opencircuit detection and individual programming of different sensors which are in parallel to the same supply voltage. The HAL805 is an universal magnetic field sensor with a linear output based on the Hall effect. The IC is designed and produced in sub-micron CMOS technology and can be used for angle or distance measurements if combined with a rotating or moving magnet. The major characteristics like magnetic field range, sensitivity, output quiescent voltage (output voltage at B = 0 mT), and output voltage range are programmable in a non-volatile memory. The sensor has a ratiometric output characteristic, which means that the output voltage is proportional to the magnetic flux and the supply voltage. The HAL805 features a temperature-compensated Hall plate with choppered offset compensation, an A/D converter, digital signal processing, a D/A converter with output driver, an EEPROM memory with redundancy and lock function for the calibration data, a serial interface for programming the EEPROM, and protection devices at all pins. The internal digital signal processing is of great benefit because analog offsets, temperature shifts, and mechanical stress do not degrade the sensor accuracy. The HAL805 is programmable by modulating the supply voltage. No additional programming pin is needed. The easy programmability allows a 2-point calibration by adjusting the output voltage directly to the input signal (like mechanical angle, distance, or current). Individual adjustment of each sensor during the customer's manufacturing process is possible. With this calibration procedure, the tolerances of the sensor, the magnet, and the mechanical positioning can be compensated in the final assembly. This offers a low-cost alternative for all applications that presently need mechanical adjustment or laser trimming for calibrating the system. In addition, the temperature compensation of the Hall IC can be fit to all common magnetic materials by programming first and second order temperature coefficients of the Hall sensor sensitivity. This enables operation over the full temperature range with high accuracy. The calculation of the individual sensor characteristics and the programming of the EEPROM memory can Micronas The sensor is designed for hostile industrial and automotive applications and operates with typically 5 V supply voltage in the ambient temperature range from -40 C up to 150 C. The HAL805 is available in the very small leaded packages TO92UT-1 and TO92UT-2. 1.1. Major Applications Due to the sensor's versatile programming characteristics, the HAL805 is the optimal system solution for applications such as: - contactless potentiometers, - angle sensors, - distance measurements, - magnetic field and current measurement. WARNING: DO NOT USE THESE SENSORS IN LIFESUPPORTING SYSTEMS, AVIATION, AND AEROSPACE APPLICATIONS. 1.2. Features - high-precision linear Hall effect sensor with ratiometric output and digital signal processing - multiple programmable magnetic characteristics in a non-volatile memory (EEPROM) with redundancy and lock function - open-circuit detection (ground and supply line break detection) - for programming an individual sensor within several sensors in parallel to the same supply voltage, a selection can be done via the output pin - temperature characteristics are programmable for matching all common magnetic materials - programmable clamping function - programming through a modulation of the supply voltage - operates from -40 C up to 150 C ambient temperature - operates from 4.5 V up to 5.5 V supply voltage in specification and functions up to 8.5 V - operates with static magnetic fields and dynamic magnetic fields up to 2 kHz June 24, 2004; 6251-513-2DS 3 HAL 805 DATA SHEET - overvoltage and reverse-voltage protection at all pins 1.5. Hall Sensor Package Codes - magnetic characteristics extremely robust against mechanical stress HALXXXPA-T Temperature Range: A or K Package: UT for TO92UT-1/-2 Type: 805 - short-circuit protected push-pull output - EMC and ESD optimized design Example: HAL805UT-K 1.3. Marking Code The HAL805 has a marking on the package surface (branded side). This marking includes the name of the sensor and the temperature range. Type HAL805 Temperature Range A K 805A 805K Type: 805 Package: TO92UT Temperature Range: TJ = -40C to +140C Hall sensors are available in a wide variety of packaging versions and quantities. For more detailed information, please refer to the brochure: "Hall Sensors: Ordering Codes, Packaging, Handling". 1.6. Solderability 1.3.1. Special Marking of Prototype Parts Package TO92UT-1/-2: according to IEC68-2-58 Prototype parts are coded with an underscore beneath the temperature range letter on each IC. They may be used for lab experiments and design-ins but are not intended to be used for qualification tests or as production parts. During soldering reflow processing and manual reworking, a component body temperature of 260 C should not be exceeded. 1.4. Operating Junction Temperature Range (TJ) Solderability is guaranteed for one year from the date code on the package. Solderability has been tested after storing the devices for 16 hours at 155 C. The wettability was more than 95%. The Hall sensors from Micronas are specified to the chip temperature (junction temperature TJ). 1.7. Pin Connections and Short Descriptions A: TJ = -40 C to +170 C K: TJ = -40 C to +140 C The relationship between ambient temperature (TA) and junction temperature is explained in Section 4.5. on page 23. Pin No. Pin Name Type Short Description 1 VDD IN Supply Voltage and Programming Pin 2 GND 3 OUT 1 Ground OUT Push Pull Output and Selection Pin VDD OUT 3 2 GND Fig. 1-1: Pin configuration 4 June 24, 2004; 6251-513-2DS Micronas HAL 805 DATA SHEET analog output is switched off during the communication. 2. Functional Description 2.1. General Function The external magnetic field component perpendicular to the branded side of the package generates a Hall voltage. The Hall IC is sensitive to magnetic north and south polarity. This voltage is converted to a digital value, processed in the Digital Signal Processing Unit (DSP) according to the settings of the EEPROM registers, converted to an analog voltage with ratiometric behavior, and stabilized by a push-pull output transistor stage. The function and the parameters for the DSP are explained in Section 2.2. on page 7. Several sensors in parallel to the same supply and ground line can be programmed individually. The selection of each sensor is done via its output pin. The open-circuit detection provides a defined output voltage if the VDD or GND line is broken. Internal temperature compensation circuitry and the choppered offset compensation enables operation over the full temperature range with minimal changes in accuracy and high offset stability. The circuitry also rejects offset shifts due to mechanical stress from the package. The non-volatile memory consists of redundant EEPROM cells. In addition, the sensor IC is equipped with devices for overvoltage and reverse-voltage protection at all pins. The setting of the LOCK register disables the programming of the EEPROM memory for all time. This register cannot be reset. VDD (V) As long as the LOCK register is not set, the output characteristic can be adjusted by programming the EEPROM registers. The IC is addressed by modulating the supply voltage (see Fig. 2-1). In the supply voltage range from 4.5 V up to 5.5 V, the sensor generates an analog output voltage. After detecting a command, the sensor reads or writes the memory and answers with a digital signal on the output pin. The HAL 805 VDD 8 VOUT (V) The HAL805 is a monolithic integrated circuit which provides an output voltage proportional to the magnetic flux through the Hall plate and proportional to the supply voltage (ratiometric behavior). 7 6 5 VDD OUT digital analog GND Fig. 2-1: Programming with VDD modulation VDD Internally stabilized Supply and Protection Devices Switched Hall Plate Temperature Dependent Bias Oscillator A/D Converter Digital Signal Processing Open Circuit Detection D/A Converter 100 OUT 10 k EEPROM Memory Supply Level Detection Analog Output Protection Devices Digital Output Lock Control GND Fig. 2-2: HAL805 block diagram Micronas June 24, 2004; 6251-513-2DS 5 HAL 805 DATA SHEET ADC-READOUT Register 14 bit Digital Output Digital Signal Processing A/D Converter TC TCSQ 6 bit 5 bit Digital Filter Multiplier Adder Limiter D/A Converter MODE Register RANGE FILTER 3 bit 3 bit SENSITIVITY VOQ CLAMPLOW CLAMPHIGH LOCKR 14 bit 11 bit 10 bit 11 bit 1 bit Micronas Registers EEPROM Memory Lock Control Fig. 2-3: Details of EEPROM and Digital Signal Processing Range = 30 mT Filter = 500 Hz V 5 Range = 100 mT Filter = 2 kHz V 5 Clamp-high = 4.5 V VOUT Clamp-high = 4 V 4 VOUT Sensitivity = 0.116 3 4 3 Sensitivity = -1.36 VOQ = 2.5 V VOQ = -0.5 V 2 2 1 1 Clamp-low = 1 V 0 -40 -20 Clamp-low = 0.5 V 0 20 0 -150 -100 -50 40 mT 50 100 150 mT B B Fig. 2-4: Example for output characteristics 6 0 Fig. 2-5: Example for output characteristics June 24, 2004; 6251-513-2DS Micronas HAL 805 DATA SHEET 2.2. Digital Signal Processing and EEPROM The DSP is the main part of this sensor and performs the signal conditioning. The parameters for the DSP are stored in the EEPROM registers. The details are shown in Fig. 2-3. Filter = 2 kHz 2000 1500 ADCREADOUT Terminology: 1000 SENSITIVITY: name of the register or register value Sensitivity: name of the parameter 500 The EEPROM registers consist of three groups: Group 1 contains the registers for the adaption of the sensor to the magnetic system: MODE for selecting the magnetic field range and filter frequency, TC and TCSQ for the temperature characteristics of the magnetic sensitivity. Group 2 contains the registers for defining the output characteristics: SENSITIVITY, VOQ, CLAMP-LOW, and CLAMP-HIGH. The output characteristic of the sensor is defined by these 4 parameters (see Fig. 2-4 and Fig. 2-5 for examples). - The parameter VOQ (Output Quiescent Voltage) corresponds to the output voltage at B = 0 mT. - The parameter Sensitivity defines the magnetic sensitivity: Sensitivity = -500 Range 150 mT -1000 Range 90 mT Range 60 mT -1500 Range 30 mT -2000 -200-150-100 -50 0 50 100 150 200 mT B Fig. 2-6: Typical ADC-READOUT versus magnetic field for filter = 2 kHz VOUT B - The output voltage can be calculated as: VOUT Sensitivity x B + VOQ The output voltage range can be clamped by setting the registers CLAMP-LOW and CLAMP-HIGH in order to enable failure detection (such as short-circuits to VDD or GND and open connections). Group 3 contains the Micronas registers and LOCK for the locking of all registers. The Micronas registers are programmed and locked during production and are read-only for the customer. These registers are used for oscillator frequency trimming, A/D converter offset compensation, and several other special settings. An external magnetic field generates a Hall voltage on the Hall plate. The ADC converts the amplified positive or negative Hall voltage (operates with magnetic north and south poles at the branded side of the package) to a digital value. Positive values correspond to a magnetic north pole on the branded side of the package. The digital signal is filtered in the internal low-pass filter and is readable in the ADC-READOUT register. Depending on the programmable magnetic range of the Hall IC, the operating range of the A/D converter is from -30 mT...+30 mT up to -150 mT...+150 mT. Micronas 0 During further processing, the digital signal is multiplied with the sensitivity factor, added to the quiescent output voltage and limited according to the clamping voltage. The result is converted to an analog signal and stabilized by a push-pull output transistor stage. The ADC-READOUT at any given magnetic field depends on the programmed magnetic field range but also on the filter frequency. Fig. 2-6 shows the typical ADC-READOUT values for the different magnetic field ranges with the filter frequency set to 2 kHz. The relationship between the minimum and maximum ADCREADOUT values and the filter frequency setting is listed in the following table. Filter Frequency ADC-READOUT RANGE 80 Hz -3968...3967 160 Hz -1985...1985 500 Hz -5292...5290 1 kHz -2646...2645 2 kHz -1512...1511 June 24, 2004; 6251-513-2DS 7 HAL 805 DATA SHEET TC and TCSQ Note: During application design, it should be taken into consideration that the maximum and minimum ADC-READOUT is not exceeded during calibration and operation of the Hall IC. Consequently, the maximum and minimum magnetic fields that may occur in the operational range of a specific application should not saturate the A/D converter. Please note that the A/D converter saturates at magnetic fields well above, respectively below, the magnetic range limits. This large safety band between specified magnetic range and true operational range helps to avoid any saturation. Range The RANGE bits are the three lowest bits of the MODE register; they define the magnetic field range of the A/ D converter. Magnetic Field Range RANGE -30 mT...30 mT 0 -40 mT...40 mT 4 -60 mT...60 mT 5 -75 mT...75 mT 1 -80 mT...80 mT 6 -90 mT...90 mT 2 -100 mT...100 mT 7 -150 mT...150 mT 3 Sensitivity The SENSITIVITY register contains the parameter for the multiplier in the DSP. The Sensitivity is programmable between -4 and 4. For VDD = 5 V, the register can be changed in steps of 0.00049. Sensitivity = 1 corresponds to an increase of the output voltage by VDD if the ADC-READOUT increases by 2048. For all calculations, the digital value from the magnetic field of the A/D converter is used. This digital information is readable from the ADC-READOUT register. Sensitivity = VOUT * 2048 ADC-READOUT * VDD VOQ Filter The FILTER bits are the three highest bits of the MODE register; they define the -3 dB frequency of the digital low pass filter. 8 The temperature dependence of the magnetic sensitivity can be adapted to different magnetic materials in order to compensate for the change of the magnetic strength with temperature. The adaption is done by programming the TC (Temperature Coefficient) and the TCSQ registers (Quadratic Temperature Coefficient). Thereby, the slope and the curvature of the temperature dependence of the magnetic sensitivity can be matched to the magnet and the sensor assembly. As a result, the output voltage characteristic can be fixed over the full temperature range. The sensor can compensate for linear temperature coefficients ranging from about -3100 ppm/K up to 400 ppm/K and quadratic coefficients from about -5 ppm/K to 5 ppm/ K. Please refer to Section 4.3. on page 22 for the recommended settings for different linear temperature coefficients. The VOQ register contains the parameter for the adder in the DSP. VOQ is the output voltage without external magnetic field (B = 0 mT, respectively ADC-READOUT = 0) and programmable from -VDD up to VDD. For VDD = 5 V, the register can be changed in steps of 4.9 mV. -3 dB Frequency FILTER Note: If VOQ is programmed to a negative voltage, the maximum output voltage is limited to: 80 Hz 0 VOUTmax = VOQ + VDD 160 Hz 1 500 Hz 2 1 kHz 3 For calibration in the system environment, a 2-point adjustment procedure (see Section 2.3.) is recommended. The suitable Sensitivity and VOQ values for each sensor can be calculated individually by this procedure. 2 kHz 4 June 24, 2004; 6251-513-2DS Micronas HAL 805 DATA SHEET Clamping Voltage 2.3. Calibration Procedure The output voltage range can be clamped in order to detect failures like shorts to VDD or GND or an open circuit. 2.3.1. General Procedure The CLAMP-LOW register contains the parameter for the lower limit. The lower clamping voltage is programmable between 0 V and VDD/2. For VDD = 5 V, the register can be changed in steps of 2.44 mV. The CLAMP-HIGH register contains the parameter for the upper limit. The upper clamping voltage is programmable between 0 V and VDD. For VDD = 5 V, in steps of 2.44 mV. LOCKR By setting this 1-bit register, all registers will be locked, and the sensor will no longer respond to any supply voltage modulation. This bit is active after the first power-off and power-on sequence after setting the LOCK bit. For calibration in the system environment, the application kit from Micronas is recommended. It contains the hardware for the generation of the serial telegram for programming and the corresponding software for the input of the register values. In this section, programming of the sensor using this programming tool is explained. Please refer to Section 5. on page 24 for information about programming without this tool. For the individual calibration of each sensor in the customer application, a two point adjustment is recommended (see Fig. 2-7 for an example). When using the application kit, the calibration can be done in three steps: Step 1: Input of the registers which need not be adjusted individually The magnetic circuit, the magnetic material with its temperature characteristics, the filter frequency, and low and high clamping voltage are given for this application. Warning: This register cannot be reset! ADC-READOUT Therefore, the values of the following registers should be identical for all sensors of the customer application. This 14-bit register delivers the actual digital value of the applied magnetic field before the signal processing. This register can be read out and is the basis for the calibration procedure of the sensor in the system environment. - FILTER (according to the maximum signal frequency) - RANGE (according to the maximum magnetic field at the sensor position) - TC and TCSQ (depends on the material of the magnet and the other temperature dependencies of the application) - CLAMP-LOW and CLAMP-HIGH (according to the application requirements) Write the appropriate settings into the HAL805 registers. Micronas June 24, 2004; 6251-513-2DS 9 HAL 805 DATA SHEET Step 2: Calculation of VOQ and Sensitivity 2.3.2. Calibration of the Angle Sensor The calibration points 1 and 2 can be set inside the specified range. The corresponding values for VOUT1 and VOUT2 result from the application requirements. The following description explains the calibration procedure using an angle sensor as an example. The required output characteristic is shown in Fig. 2-7. Low clamping voltage VOUT1,2 High clamping voltage - the angle range is from -25 to 25 - temperature coefficient of the magnet: -500 ppm/K For highest accuracy of the sensor, calibration points near the minimum and maximum input signal are recommended. The difference of the output voltage between calibration point 1 and calibration point 2 should be more than 3.5 V. V 5 Set the system to calibration point 1 and read the register ADC-READOUT. The result is the value ADCREADOUT1. Clamp-high = 4.5 V Calibration point 1 VOUT Now, set the system to calibration point 2, read the register ADC-READOUT again, and get the value ADC-READOUT2. 3 With these values and the target values VOUT1 and VOUT2, for the calibration points 1 and 2, respectively, the values for Sensitivity and VOQ are calculated as: Sensitivity = VOUT1 - VOUT2 ADC-READOUT1 - ADC-READOUT2 * 4 2 2048 VDD 1 VOQ = VOUT1 - Clamp-low = 0.5 V ADC-READOUT1 * Sensitivity * VDD 2048 Calibration point 2 0 -30 This calculation has to be done individually for each sensor. Next, write the calculated values for Sensitivity and VOQ into the IC for adjusting the sensor. -20 -10 0 10 20 30 Angle Fig. 2-7: Example for output characteristics The sensor is now calibrated for the customer application. However, the programming can be changed again and again if necessary. Step 3: Locking the Sensor The last step is activating the LOCK function with the "LOCK" command. Please note that the LOCK function becomes effective after power-down and power-up of the Hall IC. The sensor is now locked and does not respond to any programming or reading commands. Warning: This register cannot be reset! 10 June 24, 2004; 6251-513-2DS Micronas HAL 805 DATA SHEET Step 1: Input of the registers which need not be adjusted individually The register values for the following registers are given for all applications: - FILTER Select the filter frequency: 500 Hz - RANGE Select the magnetic field range: 30 mT - TC For this magnetic material: 6 Software Calibration: Use the menu CALIBRATE from the PC software and enter the values 4.5 V for VOUT1 and 0.5 V for VOUT2. Set the system to calibration point 1 (angle 1 = -25), hit the button "Read ADC-Readout1", set the system to calibration point 2 (angle 2 = 25), hit the button "Read ADC-Readout2", and hit the button "Calculate". The software will then calculate the appropriate VOQ and Sensitivity. - TCSQ For this magnetic material: 14 This calculation has to be done individually for each sensor. Now, write the calculated values with the "write and store" command into the HAL805 for programming the sensor. - CLAMP-LOW For our example: 0.5 V Step 3: Locking the Sensor - CLAMP-HIGH For our example: 4.5 V Enter these values in the software, and use the "write and store" command for permanently writing the values in the registers. The last step is activating the LOCK function with the "LOCK" command. Please note that the LOCK function becomes effective after power-down and power-up of the Hall IC. The sensor is now locked and does not respond to any programming or reading commands. Step 2: Calculation of VOQ and Sensitivity Warning: This register cannot be reset! There are two ways to calculate the values for VOQ and Sensitivity. Manual Calculation: Set the system to calibration point 1 (angle 1 = -25) and read the register ADC-READOUT. For our example, the result is ADC-READOUT1 = -2500. Next, set the system to calibration point 2 (angle 2 = 25), and read the register ADC-READOUT again. For our example, the result is ADC-READOUT2 = +2350. With these measurements and the targets VOUT1 = 4.5 V and VOUT2 = 0.5 V, the values for Sensitivity and VOQ are calculated as Sensitivity = VOQ = 4.5 V - Micronas 4.5 V - 0.5 V -2500 - 2350 * 2048 = -0.3378 5V -2500 * (-0.3378) * 5 V = 2.438 V 2048 June 24, 2004; 6251-513-2DS 11 HAL 805 DATA SHEET 3. Specifications 3.1. Outline Dimensions Fig. 3-1: TO92UT-2: Plastic Transistor Standard UT package, 3 leads Weight approximately 0.12 g 12 June 24, 2004; 6251-513-2DS Micronas HAL 805 DATA SHEET Fig. 3-2: TO92UT-1: Plastic Transistor Standard UT package, 3 leads, spread Weight approximately 0.12 g Micronas June 24, 2004; 6251-513-2DS 13 HAL 805 DATA SHEET Fig. 3-3: TO92UT-2: Dimensions ammopack inline 14 June 24, 2004; 6251-513-2DS Micronas HAL 805 DATA SHEET Fig. 3-4: TO92UT-1: Dimensions ammopack inline, spread Micronas June 24, 2004; 6251-513-2DS 15 HAL 805 DATA SHEET 3.2. Dimensions of Sensitive Area 0.25 mm x 0.25 mm 3.3. Position of Sensitive Areas TO92UT-1/-2 x center of the package y 1.5 mm nominal Bd 0.3 mm 3.4. Absolute Maximum Ratings Stresses beyond those listed in the "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only. Functional operation of the device at these conditions is not implied. Exposure to absolute maximum rating conditions for extended periods will affect device reliability. This device contains circuitry to protect the inputs and outputs against damage due to high static voltages or electric fields; however, it is advised that normal precautions be taken to avoid application of any voltage higher than absolute maximum-rated voltages to this circuit. All voltages listed are referenced to ground (GND). Symbol Parameter Pin No. Min. Max. Unit VDD Supply Voltage 1 -8.5 8.5 V VDD Supply Voltage 1 -14.41) 2) 14.41) 2) V -IDD Reverse Supply Current 1 - 501) mA VOUT Output Voltage 3 -55) -55) 8.53) 14.43) 2) V VOUT - VDD Excess of Output Voltage over Supply Voltage 3,1 - 2 V IOUT Continuous Output Current 3 -10 10 mA tSh Output Short Circuit Duration 3 - 10 min TJ Junction Temperature Range - -40 -40 1704) 150 C C NPROG Number of Programming Cycles - - 100 1) 2) 3) 4) 5) 16 as long as TJmax is not exceeded t < 10 min (VDDmin = -15 V for t < 1 min, VDDmax = 16 V for t < 1 min) as long as TJmax is not exceeded, output is not protected to external 14 V-line (or to -14 V) t < 1000h internal protection resistor = 100 June 24, 2004; 6251-513-2DS Micronas HAL 805 DATA SHEET 3.4.1. Storage and Shelf Life The permissible storage time (shelf life) of the sensors is unlimited, provided the sensors are stored at a maximum of 30 C and a maximum of 85% relative humidity. At these conditions, no Dry Pack is required. Solderability is guaranteed for one year from the date code on the package. Solderability has been tested after storing the devices for 16 hours at 155 C. The wettability was more than 95%. 3.5. Recommended Operating Conditions Functional operation of the device beyond those indicated in the "Recommended Operating Conditions/Characteristics" is not implied and may result in unpredictable behavior of the device and may reduce reliability and lifetime. All voltages listed are referenced to ground (GND). Symbol Parameter Pin No. Min. Typ. Max. Unit VDD Supply Voltage 1 4.5 5 5.5 V IOUT Continuous Output Current 3 -1 - 1 mA RL Load Resistor 3 4.5 - - k CL Load Capacitance 3 0.33 10 1000 nF 3.6. Characteristics at TJ = -40 C to +170 C, VDD = 4.5 V to 5.5 V, GND = 0 V after programming, at Recommended Operation Conditions if not otherwise specified in the column "Conditions". Typical Characteristics for TJ = 25 C and VDD = 5 V. Symbol Parameter Pin No. Min. Typ. Max. Unit Test Conditions IDD Supply Current over Temperature Range 1 - 7 10 mA VDDZ Overvoltage Protection at Supply 1 - 17.5 20 V IDD = 25 mA, TJ = 25 C, t = 20 ms VOZ Overvoltage Protection at Output 3 - 17 19.5 V IO = 10 mA, TJ = 25 C, t = 20 ms Resolution 3 - 12 - bit ratiometric to VDD1) INL Non-Linearity of Output Voltage over Temperature 3 -0.5 0 0.5 % % of supply voltage2) ER Ratiometric Error of Output over Temperature (Error in VOUT / VDD) 3 -0.5 0 0.5 % VOUT1 - VOUT2 > 2 V during calibration procedure Ratiometricy of Output over Temperature 3 99.95 100 100.05 % VOUT1 - VOUT2 > 2 V during calibration procedure 3 -400 0 400 ppm/k if TC and TCSQ suitable for the application V OUT ( V DD ) V OUT ( V DD = 5 V ) = ----------------------------- --------------------------------------------V DD 5V TK 1) 2) Variation of Linear Temperature Coefficient Output DAC full scale = 5 V ratiometric, Output DAC offset = 0 V, Output DAC LSB = VDD/4096 if more than 50% of the selected magnetic field range are used and the temperature compensation is suitable Micronas June 24, 2004; 6251-513-2DS 17 HAL 805 DATA SHEET Symbol Parameter Pin No. Min. Typ. Max. Unit Test Conditions VOUTCL Accuracy of Output Voltage at Clamping Low Voltage over Temperature Range 3 -45 0 45 mV RL = 4.7 k, VDD = 5 V VOUTCH Accuracy of Output Voltage at Clamping High Voltage over Temperature Range 3 -45 0 45 mV RL = 4.7 k, VDD = 5 V VOUTH Output High Voltage 3 4.65 4.8 - V VDD = 5 V, -1 mA IOUT 1mA VOUTL Output Low Voltage 3 - 0.2 0.35 V VDD = 5 V, -1 mA IOUT 1mA fADC Internal ADC Frequency over Temperature Range - 110 128 150 kHz VDD = 4.5 V to 8.5 V tr(O) Response Time of Output 3 - 5 4 2 1 10 8 4 2 ms ms ms ms 3 dB Filter frequency = 80 Hz 3 dB Filter frequency = 160 Hz 3 dB Filter frequency = 500 Hz 3 dB Filter frequency = 2 kHz CL = 10 nF, time from 10% to 90% of final output voltage for a steplike signal Bstep from 0 mT to Bmax td(O) Delay Time of Output 3 - 0.1 0.5 ms CL = 10 nF tPOD Power-Up Time (Time to reach stabilized Output Voltage) - - 6 5 3 2 11 9 5 3 ms ms ms ms 3 dB Filter frequency = 80 Hz 3 dB Filter frequency = 160 Hz 3 dB Filter frequency = 500 Hz 3 dB Filter frequency = 2 kHz CL = 10 nF, 90% of VOUT BW Small Signal Bandwidth (-3 dB) 3 - 2 - kHz BAC < 10 mT; 3 dB Filter frequency = 2 kHz VOUTn Noise Output Voltagepp 3 - 3 6 mV magnetic range = 90 mT1) 3 dB Filter frequency = 80 Hz Sensitivity 0.26 ROUT Output Resistance over Recommended Operating Range 3 - 1 10 VOUTLmax VOUT VOUTHmin RthJA TO92UT-1, TO92UT-2 Thermal Resistance Junction to Soldering Point - - 150 200 K/W 1) peak-to-peak value exceeded: 5% 3.7. Magnetic Characteristics at TJ = -40 C to +170 C, VDD = 4.5 V to 5.5 V, GND = 0 V after programming, at Recommended Operation Conditions if not otherwise specified in the column "Conditions". Typical Characteristics for TJ = 25 C and VDD = 5 V. Symbol Parameter Pin No. Min. Typ. Max. Unit Test Conditions BOffset Magnetic Offset 3 -0.5 0 0.5 mT B = 0 mT, IOUT = 0 mA, TJ = 25 C unadjusted sensor BOffset/T Magnetic Offset Change due to TJ -10 0 10 T/K B = 0 mT, IOUT = 0 mA 18 June 24, 2004; 6251-513-2DS Micronas HAL 805 DATA SHEET 3.8. Open Circuit Detection at TJ = -40 C to +170 C, Typical Characteristics for TJ = 25 C Symbol Parameter Pin No. Min. Typ. Max. Unit Test Conditions VOUT Output voltage at open VDD line 3 0 0 0.2 V VDD = 5 V RL = 10 k to GND VOUT Output voltage at open GND line 3 4.7 4.8 5 V VDD = 5 V RL = 10 k to GND Micronas June 24, 2004; 6251-513-2DS 19 HAL 805 DATA SHEET 3.9. Typical Characteristics mA 10 mA 20 TA = 25 C VDD = 5 V 15 IDD IDD 8 10 5 6 0 4 -5 -10 TA = -40 C 2 TA = 25 C -15 TA=150 C -20 -15 -10 -5 0 5 10 15 0 -1.5 -1.0 -0.5 20 V 0.0 0.5 1.0 1.5 mA IOUT VDD Fig. 3-5: Typical current consumption versus supply voltage Fig. 3-7: Typical current consumption versus output current dB 5 mA 10 VDD = 5 V 0 IDD VOUT 8 -3 -5 -10 6 -15 -20 4 -25 -30 2 -35 0 -50 0 50 100 150 -40 10 200 C 20 Filter: 500 Hz Filter: 2 kHz 100 1000 10000 Hz fsignal TA Fig. 3-6: Typical current consumption versus ambient temperature Filter: 80 Hz Filter: 160 Hz Fig. 3-8: Typical output voltage versus signal frequency June 24, 2004; 6251-513-2DS Micronas HAL 805 DATA SHEET % 1.0 mT 1.0 0.8 0.8 TC = 16, TCSQ = 8 TC = 0, BOffset ER 0.6 0.6 0.4 0.4 0.2 0.2 -0.0 -0.0 -0.2 -0.2 VOUT/VDD = 0.82 -0.4 TCSQ = 12 TC = -20, TCSQ = 12 -0.4 VOUT/VDD = 0.66 -0.6 VOUT/VDD = 0.5 -0.6 -0.8 VOUT/VDD = 0.34 -0.8 VOUT/VDD = 0.18 -1 4 5 6 7 -1 -50 8V 0 50 100 VDD 150 200 C TA Fig. 3-9: Typical ratiometric error versus supply voltage Fig. 3-11: Typical magnetic offset versus ambient temperature % 120 % 1.0 0.8 1/sensitivity 100 INL 0.6 0.4 80 0.2 60 -0.0 -0.2 40 -0.4 TC = 16, TCSQ = 8 TC = 0, 20 -0.6 TCSQ = 12 Range = 30 mT TC = -20, TCSQ = 12 -0.8 TC = -31, TCSQ = 0 0 -50 0 50 100 150 -1 -40 200 C TA Fig. 3-10: Typical 1/sensitivity versus ambient temperature Micronas -20 0 20 40 mT B Fig. 3-12: Typical nonlinearity versus magnetic field June 24, 2004; 6251-513-2DS 21 HAL 805 DATA SHEET 4. Application Notes 4.3. Temperature Compensation 4.1. Application Circuit The relationship between the temperature coefficient of the magnet and the corresponding TC and TCSQ codes for linear compensation is given in the following table. In addition to the linear change of the magnetic field with temperature, the curvature can be adjusted as well. For this purpose, other TC and TCSQ combinations are required which are not shown in the table. Please contact Micronas for more detailed information on this higher order temperature compensation. For EMC protection, it is recommended to connect one ceramic 4.7 nF capacitor each between ground and the supply voltage, respectively the output voltage pin. In addition, the input of the controller unit should be pulled-down with a 4.7 kOhm resistor and a ceramic 4.7 nF capacitor. Please note that during programming, the sensor will be supplied repeatedly with the programming voltage of 12.5 V for 100 ms. All components connected to the VDD line at this time must be able to resist this voltage. The HAL810, HAL815, and HAL805 contain the same temperature compensation circuits. If an optimal setting for the HAL810, HAL815 is already available, the same settings may be used for the HAL805. VDD Temperature Coefficient of Magnet (ppm/K) OUT C HAL805 4.7 nF 4.7 nF 4.7 nF Fig. 4-1: Recommended application circuit 4.2. Use of two HAL805 in Parallel Two different HAL805 sensors which are operated in parallel to the same supply and ground line can be programmed individually. In order to select the IC which should be programmed, both Hall ICs are inactivated by the "Deactivate" command on the common supply line. Then, the appropriate IC is activated by an "Activate" pulse on its output. Only the activated sensor will react to all following read, write, and program commands. If the second IC has to be programmed, the "Deactivate" command is sent again, and the second IC can be selected. 10 nF 4.7 nF 400 31 6 300 28 7 200 24 8 100 21 9 0 18 10 -50 17 10 -90 16 11 -130 15 11 -170 14 11 -200 13 12 -240 12 12 -280 11 12 -320 10 13 HAL 805 Sensor B -360 9 13 VDD -410 8 13 OUT A & Select A -450 7 13 -500 6 14 -550 5 14 -600 4 14 -650 3 14 -700 2 15 -750 1 15 OUT B & Select B 4.7 nF GND Fig. 4-2: Parallel operation of two HAL 805 22 TCSQ 4.7 k GND HAL 805 Sensor A TC June 24, 2004; 6251-513-2DS Micronas HAL 805 DATA SHEET Temperature Coefficient of Magnet (ppm/K) TC TCSQ 4.4. Undervoltage Behavior In a voltage range below 4.5 V to approximately 3.5 V, the operation of the HAL805 is typically given and predictable for the most sensors. Some of the parameters may be out of the specification. Below about 3.5 V, the digital processing is reset. If the supply voltage once again rises above about 3.5 V, a startup time of about 20 s elapses for the digital processing to occur. As long as the supply voltage is still above about 3.2 V, the analog output is kept at its last valid value ratiometric to VDD. Below about 3 V, the entire sensor will reset. -810 0 15 -860 -1 16 -910 -2 16 -960 -3 16 -1020 -4 17 -1070 -5 17 -1120 -6 17 -1180 -7 18 -1250 -8 18 -1320 -9 19 -1380 -10 19 -1430 -11 20 At static conditions and continuous operation, the following equation applies: -1500 -12 20 T = IDD * VDD * RthJA -1570 -13 20 -1640 -14 21 -1710 -15 21 For typical values, use the typical parameters. For worst case calculation, use the max. parameters for IDD and Rth, and the max. value for VDD from the application. -1780 -16 22 -1870 -17 22 -1950 -18 23 -2030 -19 23 For all sensors, the junction temperature TJ is specified. The maximum ambient temperature TAmax can be calculated as: -2100 -20 24 TAmax = TJmax -T -2180 -21 24 -2270 -22 25 -2420 -24 26 -2500 -25 27 -2600 -26 27 -2700 -27 28 -2800 -28 28 -2900 -29 29 -3000 -30 30 -3100 -31 31 4.5. Ambient Temperature Due to the internal power dissipation, the temperature on the silicon chip (junction temperature TJ) is higher than the temperature outside the package (ambient temperature TA). TJ = TA + T For VDD = 5.5 V, Rth = 200 K/W and IDD = 10 mA the temperature difference T = 11 K. 4.6. EMC and ESD The HAL805 is designed for a stabilized 5 V supply. Interferences and disturbances conducted along the 12 V onboard system (product standard ISO 7637 part 1) are not relevant for these applications. For applications with disturbances by capacitive or inductive coupling on the supply line or radiated disturbances, the application circuit shown in Fig. 4-1 is recommended. Applications with this arrangement passed the EMC tests according to the product standards ISO 7637 part 3 (Electrical transient transmission by capacitive or inductive coupling) and part 4 (Radiated disturbances). Please contact Micronas for the detailed investigation reports with the EMC and ESD results. Micronas June 24, 2004; 6251-513-2DS 23 HAL 805 DATA SHEET - Read a register (see Fig. 5-3) After evaluating this command, the sensor answers with the Acknowledge Bit, 14 Data Bits, and the Data Parity Bit on the output. 5. Programming of the Sensor 5.1. Definition of Programming Pulses The sensor is addressed by modulating a serial telegram on the supply voltage. The sensor answers with a serial telegram on the output pin. The bits in the serial telegram have a different bit time for the VDD-line and the output. The bit time for the VDD-line is defined through the length of the Sync Bit at the beginning of each telegram. The bit time for the output is defined through the Acknowledge Bit. A logical "0" is coded as no voltage change within the bit time. A logical "1" is coded as a voltage change between 50% and 80% of the bit time. After each bit, a voltage change occurs. - Programming the EEPROM cells (see Fig. 5-4) After evaluating this command, the sensor answers with the Acknowledge Bit. After the delay time tw, the supply voltage rises up to the programming voltage. - Activate a sensor (see Fig. 5-5) If more than one sensor is connected to the supply line, selection can be done by first deactivating all sensors. The output of all sensors will be pulled to ground by the internal 10 k resistors. With an Activate pulse on the appropriate output pin, an individual sensor can be selected. All following commands will only be accepted from the activated sensor. 5.2. Definition of the Telegram tr tf VDDH Each telegram starts with the Sync Bit (logical 0), 3 bits for the Command (COM), the Command Parity Bit (CP), 4 bits for the Address (ADR), and the Address Parity Bit (AP). tp0 logical 0 VDDL There are 4 kinds of telegrams: - Write a register (see Fig. 5-2) After the AP Bit, follow 14 Data Bits (DAT) and the Data Parity Bit (DP). If the telegram is valid and the command has been processed, the sensor answers with an Acknowledge Bit (logical 0) on the output. tp0 or tp1 VDDH tp0 logical 1 VDDL or tp0 tp1 Fig. 5-1: Definition of logical 0 and 1 bit Table 5-1: Telegram parameters Symbol Parameter Pin Min. Typ. Max. Unit VDDL Supply Voltage for Low Level during Programming 1 5 5.6 6 V VDDH Supply Voltage for High Level during Programming 1 6.8 8.0 8.5 V tr Rise time 1 0.05 ms tf Fall time 1 0.05 ms tp0 Bit time on VDD 1 1.7 1.75 1.8 ms tp0 is defined through the Sync Bit tpOUT Bit time on output pin 3 2 3 4 ms tpOUT is defined through the Acknowledge Bit tp1 Voltage Change for logical 1 1, 3 50 65 80 % % of tp0 or tpOUT VDDPROG Supply Voltage for Programming the EEPROM 1 12.4 12.5 12.6 V tPROG Programming Time for EEPROM 1 95 100 105 ms trp Rise time of programming voltage 1 0.2 0.5 1 ms 24 June 24, 2004; 6251-513-2DS Remarks Micronas HAL 805 DATA SHEET Table 5-1: Telegram parameters, continued Symbol Parameter Pin Min. tfp Fall time of programming voltage 1 0 tw Delay time of programming voltage after Acknowledge 1 0.5 Vact Voltage for an Activate pulse 3 tact Duration of an Activate pulse 3 Typ. Max. Unit 1 ms 0.7 1 ms 3 4 5 V 0.05 0.1 0.2 ms Remarks WRITE Sync COM CP ADR AP DAT DP VDD Acknowledge VOUT Fig. 5-2: Telegram for coding a Write command READ Sync COM CP ADR AP VDD Acknowledge DAT DP VOUT Fig. 5-3: Telegram for coding a Read command trp tPROG tfp VDDPROG ERASE, PROM, and LOCK Sync COM CP ADR AP VDD Acknowledge VOUT tw Fig. 5-4: Telegram for coding the EEPROM programming VACT tr tACT tf VOUT Fig. 5-5: Activate pulse Micronas June 24, 2004; 6251-513-2DS 25 HAL 805 DATA SHEET 5.3. Telegram Codes Data Bits (DAT) The 14 Data Bits contain the register information. Sync Bit Each telegram starts with the Sync Bit. This logical "0" pulse defines the exact timing for tp0. The registers use different number formats for the Data Bits. These formats are explained in Section 5.4. Command Bits (COM) In the Write command, the last bits are valid. If, for example, the TC register (6 bits) is written, only the last 6 bits are valid. The Command code contains 3 bits and is a binary number. Table 5-2 shows the available commands and the corresponding codes for the HAL805. In the Read command, the first bits are valid. If, for example, the TC register (6 bits) is read, only the first 6 bits are valid. Command Parity Bit (CP) Data Parity Bit (DP) This parity bit is "1" if the number of zeros within the 3 Command Bits is uneven. The parity bit is "0", if the number of zeros is even. This parity bit is "1" if the number of zeros within the binary number is even. The parity bit is "0" if the number of zeros is uneven. Address Bits (ADR) Acknowledge The Address code contains 4 bits and is a binary number. Table 5-3 shows the available addresses for the HAL805 registers. After each telegram, the output answers with the Acknowledge signal. This logical "0" pulse defines the exact timing for tpOUT. Address Parity Bit (AP) This parity bit is "1" if the number of zeros within the 4 Address bits is uneven. The parity bit is "0" if the number of zeros is even. Table 5-2: Available commands Command Code Explanation READ 2 read a register WRITE 3 write a register PROM 4 program all nonvolatile registers (except the lock bits) ERASE 5 erase all nonvolatile registers (except the lock bits) LOCK 7 lock the whole device and switch permanently to the analog-mode 26 June 24, 2004; 6251-513-2DS Micronas HAL 805 DATA SHEET 5.4. Number Formats Two-complementary number: The most significant bit is given as first, the least significant bit as last digit. The first digit of positive numbers is "0", the rest of the number is a binary number. Negative numbers start with "1". In order to calculate the absolute value of the number, calculate the complement of the remaining digits and add "1". Example: 101001 represents 41 decimal. Example: Binary number: 0101001 represents +41 decimal 1010111 represents -41 decimal Signed binary number: The first digit represents the sign of the following binary number (1 for negative, 0 for positive sign). Example: 0101001 represents +41 decimal 1101001 represents -41 decimal Table 5-3: Available register addresses Register Code Data Bits Format Customer Remark CLAMP-LOW 1 10 binary read/write/program Low clamping voltage CLAMP-HIGH 2 11 binary read/write/program High clamping voltage VOQ 3 11 two compl. binary read/write/program SENSITIVITY 4 14 signed binary read/write/program MODE 5 6 binary read/write/program Range and filter settings LOCKR 6 1 binary lock Lock Bit ADC-READOUT 7 14 two compl. binary read TC 11 6 signed binary read/write/program TCSQ 12 5 binary read/write/program DEACTIVATE 15 12 binary write Deactivate the sensor Micronas registers (read only for customers) Register Code Data Bits Format Remark OFFSET 8 5 two compl. binary ADC offset adjustment FOSCAD 9 5 binary Oscillator frequency adjustment SPECIAL 13 8 Micronas special settings June 24, 2004; 6251-513-2DS 27 HAL 805 DATA SHEET ADC-READOUT 5.5. Register Information - This register is read only. - The register range is from -8192 up to 8191. CLAMP-LOW - The register range is from 0 up to 1023. DEACTIVATE - The register value is calculated by: CLAMP-LOW = Low Clamping Voltage VDD * 2048 - This register can only be written. - The register has to be written with 2063 decimal (80F hexadecimal) for the deactivation. - The sensor can be reset with an Activate pulse on the output pin or by switching off and on the supply voltage. CLAMP-HIGH - The register range is from 0 up to 2047. - The register value is calculated by: CLAMP-HIGH = High Clamping Voltage VDD 5.6. Programming Information * 2048 VOQ - The register range is from -1024 up to 1023. - The register value is calculated by: VOQ = VOQ VDD * 1024 If the content of any register (except the lock registers) is to be changed, the desired value must first be written into the corresponding RAM register. Before reading out the RAM register again, the register value must be permanently stored in the EEPROM. Permanently storing a value in the EEPROM is done by first sending an ERASE command followed by sending a PROM command. The address within the ERASE and PROM commands is not important. ERASE and PROM act on all registers in parallel. If all HAL805 registers are to be changed, all writing commands can be sent one after the other, followed by sending one ERASE and PROM command at the end. SENSITIVITY - The register range is from -8192 up to 8191. During all communication sequences, the customer has to check if the communication with the sensor was successful. This means that the acknowledge and the parity bits sent by the sensor have to be checked by the customer. If the Micronas programmer board is used, the customer has to check the error flags sent from the programmer board. - The register value is calculated by: SENSITIVITY = Sensitivity * 2048 TC and TCSQ - The TC register range is from -31 up to 31. - The TCSQ register range is from 0 up to 31. Please refer Section 4.2. on page 22 for the recommended values. MODE - The register range is from 0 up to 63 and contains the settings for FILTER and RANGE: MODE = FILTER * 8 + RANGE Note: For production and qualification tests, it is recommended to set the LOCK bit after final adjustment and programming of HAL805. The LOCK function is active after the next power-up of the sensor. Micronas also recommends sending an additional ERASE command after sending the LOCK command. The success of the Lock Process should be checked by reading at least one sensor register after locking and/or by an analog check of the sensors output signal. Electrostatic Discharges (ESD) may disturb the programming pulses. Please take precautions against ESD. Please refer Section 2.2. on page 7 for the available FILTER and RANGE values. 28 June 24, 2004; 6251-513-2DS Micronas HAL 805 DATA SHEET Micronas June 24, 2004; 6251-513-2DS 29 HAL 805 DATA SHEET 6. Data Sheet History 1. Data Sheet: "HAL 805 Programmable Linear Hall Effect Sensor", Aug. 16, 2002, 6251-513-1DS. First release of the data sheet. 2. Data Sheet: "HAL 805 Programmable Linear Hall Effect Sensor", June 24, 2004, 6251-513-2DS. Second release of the data sheet. Major changes: - new package diagram for TO92UT-1 - package diagram for TO92UT-2 added - ammopack diagrams for TO92UT-1/-2 added Micronas GmbH Hans-Bunte-Strasse 19 D-79108 Freiburg (Germany) P.O. Box 840 D-79008 Freiburg (Germany) Tel. +49-761-517-0 Fax +49-761-517-2174 E-mail: docservice@micronas.com Internet: www.micronas.com Printed in Germany Order No. 6251-513-2DS 30 All information and data contained in this data sheet are without any commitment, are not to be considered as an offer for conclusion of a contract, nor shall they be construed as to create any liability. Any new issue of this data sheet invalidates previous issues. Product availability and delivery are exclusively subject to our respective order confirmation form; the same applies to orders based on development samples delivered. By this publication, Micronas GmbH does not assume responsibility for patent infringements or other rights of third parties which may result from its use. Further, Micronas GmbH reserves the right to revise this publication and to make changes to its content, at any time, without obligation to notify any person or entity of such revisions or changes. No part of this publication may be reproduced, photocopied, stored on a retrieval system, or transmitted without the express written consent of Micronas GmbH. June 24, 2004; 6251-513-2DS Micronas