Preliminary Data Sheet
April 2004
AGR19180EF
180 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor
Introduction
The AGR19180EF is a 180 W, 28 V N-channel later-
ally diffused metal oxide semiconductor (LDMOS) RF
power field effect transistor (FET) suitable for
personal communication service (PCS) (1930 MHz—
1990 MHz), code division multiple access (CDMA),
global system for mobile communication
(GSM/EDGE), time division multiple access (TDMA),
and single-carrier or multicarrier class AB power
amplifier app lications.
Figure 1. AGR19180EF (flanged) Package
CDMA Features
■Typical two carrier CDMA performance:
VDD = 28 V, IDQ = 1600 mA, POUT = 38 W,
f1 = 1958.75 MHz, f2 = 1961.25 MHz, IS-95/97
CDMA pilot, sync, paging, traffic codes 8—13
(9 channels) 1.2288 MHz channel bandwidth (BW),
adjacent channel power ration (ACPR) measured
over a 30 kHz BW at f1 – 885 kHz, f2 + 885 kHz.
Distortion pr odu cts meas ured ove r 1.2288 MHz
chann el BW at f1 – 2.5 MHz, f2 + 2.5 MHz.
Peak/avg = 9.72 dB @ 0.01% probability on
CCDF:
— Output power: 38 W.
— Power gain: 14.5 dB.
— Efficiency: 26%.
— IM3: –33 dBc.
— ACPR: –48.5 dBc
— Return loss: –12 dB.
Device Performance Features
■High-reliability, gold-metalization process.
■Hot carrier injection (HCI) induced bias drift of <5%
over 20 years.
■Internally matched.
■High gain, efficiency, and linearity.
■Integrated ESD protection.
■Device can withstand a 10:1 voltage standing wave
ratio (VSWR) at 28 Vdc, 1960 MHz, 180 W output
power pulsed 4 µs at 10% duty.
■Large signal impedance parameters available.
ESD Rating*
* Alt hough electrostatic discharge (ESD) protection circuitry has
been designed into this device, proper precautions must be
taken to avoid exposure to ESD and electrical overstress (EOS)
during all handling, assembly, and test operations. Agere
employs both a human-body model (HBM) and a charged-device
model (CDM) qualification requirement in order to determine
ESD-susceptibility limits and protection design evaluation. ESD
voltage thresholds are dependent on the circuit p arameters used
in each of the models, as defined by JEDEC's JESD22-A114
(HBM) and JESD22-C101 (CDM ) standards.
Caution: MOS devices are susceptible to damage from electro-
static charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
375D–03, STYLE 1
AGR19180EF Minimum (V) Class
HBM 500 1B
MM 50 A
CDM 1000 4
2Agere Systems Inc.
180 W, 1930 M Hz —1990 MHz, PCS LDMOS RF Power Transistor April 2004
AGR19180EF Preliminary Data Sheet
Electrical Characteristics
Table 1. Thermal Characteristics
Table 2. Absolute Maximum Ratings*
* Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. These are absolute stress ratings only.
Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of the
data sheet. Exposure to absolute maximum ratings for extended periods can adversely af fect device reliability.
Recommended operating conditions apply unless otherwise specified: TC = 30 °C.
Table 3. d c Characteristics
Parameter Symbol Value Unit
Thermal Resistance, Junction to Case RθJC 0.35 °C/W
Parameter Symbol Value Unit
Drain-source Voltage VDSS 65 Vdc
Gate-source V oltage VGS –0.5, 15 Vdc
Tot al Dissipation at TC = 25 °CPD500 W
Der ate Ab ove 25 °C — 3W/°C
Operating Junction Temperature TJ200 °C
S torage Temperature Range TSTG –65, 150 °C
Parameter Symbol Min Typ Max Unit
Off Characteristics
Drain-source Breakdown Volt age (VGS =0, ID=300µA) V(BR)DSS 65 —— Vdc
Gate-source Leakage Current (VGS =5V, VDS =0V) IGSS ——6µAdc
Zero Gate Voltage Drain Leakage Current (VDS =28V, VGS =0V) IDSS ——18 µAdc
On Characteristics
Forward Transconductance (VDS =10V, ID=1A) GFS —12 — S
Gate Threshold Voltage (VDS =10V, ID=600µA) VGS(TH) ——3.0 Vdc
Gate Quiescent Voltage (VDS =28V, ID=2 x 800mA) VGS(Q) —3.8 —Vdc
Drain-source On-voltage (VGS =10V, ID=1A) VDS(ON) —0.08 —Vdc
Agere Systems Inc. 3
Preliminary Data Sheet AGR19180EF
April 2004 180 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor
Electrical Characateristics (continued)
Table 4. RF Characteristics
* N-CDMA, typical peak/average ratio of 9.72 dB at 0.01% CCDF, f1 = 1958.75 MHz, and f2 = 1961.25 MHz. VDD =28Vdc, IDQ = 2 x 800 mA,
and POUT = 38 W average.
Parameter Symbol Min Typ Max Unit
Dynamic Characteristics
Reverse Transfer Capacitance
(VDS =28V, VGS =0, f=1.0MHz)
(Part is internally matched both on input and output.)
CRSS —4.0 —pF
Functional Tests (in Agere Systems Supplied Test Fixture)
Common-source Amplifier Power Gain
(VDD =28Vdc, POUT = 38 W average, two carrier N-CDMA,
IDQ = 1600 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz,
f2 = 1990 MHz)
GPS —14.5 —dB
Drain Effici enc y
(VDD =28Vdc, POUT = 38 W average, two carrier N-CDMA,
IDQ = 1600 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz,
f2 = 1990 MHz)
η—26 — %
Third-order Intermodulation Distortion*
(VDD =28Vdc, POUT = 38 W average, two carrier N-CDMA,
IDQ = 1600 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz,
f2 = 1990 MHz; IM3 measured in a 1.2288 MHz integration bandwidth
centered at f1 –2.5 MHz and f2 + 2.5 MHz, referenced to the carrier chan-
nel power)
IM3 —–33 —dBc
Adjacent Channel Power Ratio*
(VDD =28Vdc, POUT = 38 W average, two carrier N-CDMA,
IDQ = 1600 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz,
f2 = 1990 MHz; ACPR measured in a 30 kHz integration bandwidth cen-
tered at f1 – 885 kHz and f2 + 885 kHz, referenced to the carrier channel
power)
ACPR —–48.5 —dBc
Input Return Loss
(VDD =28Vdc, POUT = 38 W average, two carrier N-CDMA,
IDQ = 1600 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz,
f2 = 1990 MHz)
IRL —–12 —dB
Ruggedness
(VDD =28V, POUT = 180 W continuous wave (CW), IDQ =1600mA,
f = 1930 MHz, VSWR = 10:1 [all phase angles])
ΨNo degradation in output
power.
4Agere Systems Inc.
180 W, 1930 M Hz —1990 MHz, PCS LDMOS RF Power Transistor April 2004
AGR19180EF Preliminary Data Sheet
Test Circuit Illustrations
A. Schematic
B. Component Layout
Parts List:
■Microstrip line: Z1 0.500 in. x 0.067 in.; Z2, Z17 1.080 in. x 0.110 in.; Z3, Z16 0.210 in. x 0.067 in.; Z4, Z15 2.020 in. x 0.067 in.;
Z5, Z6 0.230 in. x 0.067 in.; Z7, Z8 0.455 in. x 0.700 in.; Z9, Z10 1.100 in. x 0.035 in.; Z11, Z12 0.475 in. x 0.740 in.;
Z13, Z14 0.100 in. x 0.067 in.; Z18 0.230 in. x 0.067 in.; Z19, Z20 0.490 in. x 0.050 in.; Z21, Z22 0.160 in. x 0.285 in.
■ATC® chip capacitor: C1, C2, C21, C22: 10 pF; C7, C14, C23, C30, C41, C42: 8.2 pF; C12, C13: 1000 pF.
■Kemet® t antalum capacitor: C27, C34: 10 µF, 35 V T491D; C4, C9, C37, C38: 1 µF, 50 V T491C.
■Kemet® chip capacitor: C5, C10, C18, C26, C33: 0.1 µF.
■Sprague® tantalum surface-mount chip capacitor: C3, C8, C28, C29, C35, C36: 22 µF, 35 V.
■Vitramon® 1206 capacitor: C5, C12: 22000 pF.
■1206 size chip resistor: R1, R4: 4.7 kΩ; R2 , R 5 560 kΩ, R3, R6: 1.02 kΩ.
■Fair-Rite® ferrite bead: FB1, FB2: 2743019447.
■Taconic® ORCER RF-35: board material, 1 oz. copper, 30 mil thickness, εr = 3.5.
Figure 2. Test Circuit
DUT
R1
C3
R3
Z9
Z1 Z2
C23
RF INPUT
V
GG
V
DD
C12
FB1
C7
Z3 C1 Z5
Z4 C2 Z6 Z8
Z7
Z10
Z16C22Z14
Z12
Z15C21Z13
Z11
Z18Z17
RF OUTPUT
C24 C25 C26 C27
+
C30
V
DD
C33 C38 C34 C35
++
Z20
Z19
1A
1B
3
2A
2B
PINS:
1A. DRAIN
1B. DRAIN
2A. G ATE
2B. G ATE
3. SOURCE
R2
C4 C5 C6
R4
C8
R6
V
GS
C13
FB2
C14
R5
C9 C10 C11
C37 C28
+
C29
+
C36
+
C31 C32
C41
C42
Z22
Z21
R3
R2
C1
C7 C41
C5
R1
C4 FB1
C6 C12
C34
C30 C33
C32
C31 C38
C22
C8 R5
R4 C11
C10C9 C13
C14
R6 FB2
C42
C2
C3
C36C35
C27
C21
C25
C24 C37
C23 C26 C29C28
Agere Systems Inc. 5
Preliminary Data Sheet AGR19180EF
April 2004 180 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor
Typical Performance Characteristics
ZS = Test circuit impedance as measured from gate to gate, balanced configuration.
ZL = Test circuit impedance as measured from drain to drain, balanced configuration.
Figure 3. Series Equivalent Input and Output Impedances
MHz (f) ZS Ω
(Complex Source Impedance)ZL Ω
(Complex Optimum Load Impedance)
1930 (f1) 2.58 – j5.9 3.2 – j4.67
1960 (f2) 2.36 – j5.2 6 2.85 – j3.86
1990 (f3) 2.37 – j4.5 1 2.72 – j3.07
0.1
0.1
0.1
0.2
0.2
0.3
0.3
0.4
0.4
0.5
0.5
0.6
0.6
0.7
0.7
0.8
0.8
0.9
0.9
1.0 1.0
1.2
1.2
1.4
1.4
1.6
1.6
1.8
1.8
2.0
2.0
3.0
3.0
4.0
4.0
5.0
5.0
10
10
10
20
20
20
50
50
50
0.2
0.2
0.2
0.4
0.4
0.4
0.6
0.6
0.6
0.8
0
.8
0.8
1.0
1.0
-20
-30
-40
-50
-60
-70
-80
-90
-100
-110
-120
-130
-140
-150
-160
170
-170
180
±
90-90
-85
-80
-75
-70
-65
-60
-55
-50
-45
-40
-35
-30
-25
-20
-15
-10
0.04
0.05
0.06
0.07
0.08
0.09
0.1
0.11
0.12
0.13
0.14
0.15
0.16
0.17
0.18
0.19
0.2
0.21
0.22
0.23
0.23
0.24
0.24
0.25
0.25
0.26
0.26
0.27
0.27
0.28
0.29
0.3
0.31
0.32
0.33
0.34
0.35
0.36
0.37
0.38
0.39
0.4
0.41
0.42
0.43
0.44
0.45
0.46
0.47
0.48
0.48
0.49
0.49
0.0
0.0
A
N
G
L
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F
T
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M
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(
-
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/
Y
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)
RESISTANCE COMPONENT (R/Zo), OR CONDUCTANCE COMPONENT (G/Yo)
ZL
f3
f1
ZS
f3 f1
Z0 = 10 Ω
DUT
INPUT MATCH OUTPUT MATCH
–+
ZSZL
+ –
DRAIN (1)
SOURCE (3)
GATE (2)
6Agere Systems Inc.
180 W, 1930 M Hz —1990 MHz, PCS LDMOS RF Power Transistor April 2004
AGR19180EF Preliminary Data Sheet
Typical Performance Characteristics (continued)
Figure 4. Two-Tone Power Gain versus Output Power
Figure 5. Third Order Intermodulation Distortion versus Output Power
12
13
14
15
16
17
18
1 10 100 1000
P o ut , O UT PUT PO W E R (WATTS ) PEP
Gps, POWER GAIN (dB)
Vdd = 28V
Center Frequency = 1960 MHz
Two-Tone Measurement, 100kHz Tone Spacing
Idq = 2000mA
Idq = 2400mA
Idq = 1600mA
I dq = 1 2 00m A
Idq = 800mA
-60
-50
-40
-30
-20
-10
1 10 100 1000
Pout, OUTPUT PO WER (WAT TS) PEP
IM3, THIRD ORDER INTE RMODULA TION DIS TOR TI ON
(dBc)
Vdd = 28V
C enter Freq uency = 1960 MHz
Two-Tone Measurement, 100kHz Tone Spacing
Idq = 2400mA
Idq = 800mA
Idq =1200mA
Idq =2000mA
Idq =1600mA
Agere Systems Inc. 7
Preliminary Data Sheet AGR19180EF
April 2004 180 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor
Typical Performance Characteristics (continued)
Figure 6. Intermodulation Distortion versus Output Power
Figure 7. Pulsed CW Output Power versus Input Power
-90
-80
-70
-60
-50
-40
-30
-20
-10
1 10 100 1000
Pou t , OUTPUT POWER (WATT S ) PEP
IMD, INTE RMODULATION DISTORT I ON (dBc)
V dd = 28V Idq = 1600mA
Center Freq uency = 1960 MHz
Two-Tone Measurement, 100kHz Tone Spacing
3rd Order
5th Order
7th Order
40
41
42
43
44
45
46
47
48
49
50
51
52
53
54
55
56
57
58
59
60
25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45
P in , IN PUT POWER (d Bm)
Pout, OUTPUT POWER (dBm)
Vdd = 28 Vdc, Idq = 1600 mA
Pulsed CW 4 msec (on ), 40 msec (off)
Center Frequency = 1960 MHz
P1d B = 53 d B m (199.77W)
P 3dB = 53. 88 dB m (244.3 4W)
8Agere Systems Inc.
180 W, 1930 M Hz —1990 MHz, PCS LDMOS RF Power Transistor April 2004
AGR19180EF Preliminary Data Sheet
Typical Performance Characteristics (continued)
Figure 8. Two-Carrier N-CDMA ACPR, IM3, Power Gain, Drain Efficiency versus Output Power
Figure 9. N-CDMA ACPR, Power Gain, Drain Efficiency versus Output Power
0
5
10
15
20
25
30
35
40
45
50
0 20406080100
Pout, OUTPUT POWER (WATTS) Avg.
Gps, POWER GAIN (dBm), EFFICIENCY (%)
-100
-90
-80
-70
-60
-50
-40
-30
-20
-10
0
IRL, RETURN LOSS (dB), IM3 (dBc), ACPR (dBc)
Gps
ACPR
IM3
IRL
Efficiency
Vdd = 28 Vdc, Idq = 1600 mA
f 1 = 1958.75 MHz, f2 = 19 61. 25 MHz
2-Car rier N-CDMA
IS–95 CDMA (P ilot , Syn c, Paging, Traffic Codes 8 Through 13)
1.2288 MHz Ch an nel Bandwidth Carrier.
9.72 dB Peak/Avg. Ratio @ 0.01% Probability (CCDF)
Chann el Spacing (Bandwidth )
ACPR: 885 kHz (30 kHz ), IM3: 2 .5 MHz (1.2288 MHz)
0
5
10
15
20
25
30
35
40
45
50
0 20 40 60 80 100
Pout, OU TPUT POWER ( WATTS), A VG.
GPS, POWER GAI N, EFFI CIENCY ( %)
-100
-90
-80
-70
-60
-50
-40
-30
-20
-10
0
AD JACE NT CHANNE L POWE R RAT I O ( d Bc)
Gps
Vdd = 28 Vdc , Idq = 1600 mA
f = 1990 MHz Ban dwidth = 1.2288 MHz
Channel Spacing ( Channe l B andwidth)
885 kHz (30 kHz), 1.25 MHz (12.5 kHz)
2.25 MHz (1MH z)
CDMA 9 Channel Forw ard
Pilot: 0, Pagin g: 1, Tr affic: 8-13, Si nc: 32
Efficiency
885 kHz (30 kHz)
1.25 MHz (12.5 kHz)
2 .25 MH z ( 1MHz)
Agere Systems Inc. 9
Preliminary Data Sheet AGR19180EF
April 2004 180 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor
Package Dimensions
All dimensions are in inches. Tolerances are ±0.005 in. unless specified.
Label Notes:
■M before the part number denotes model program. X before the part number denotes engineering prototype.
■The last two letters of the part number denote wafer technology and package type.
■YYWWLL is the date code including place of manufacture: year year work week (YYWW), LL = location (AL = Allentown, PA; T = Thailand).
XXXXX = five-digit wafer lot number.
■ZZZZZZZ = seven-digit assembly lot number on production parts.
■ZZZZZZZZZ ZZZ = 12-digit (five-digit lot, two-digit wafer, and five-digit serial number) on models and engineering prototypes.
PINS:
1A. DRAIN
1B. DRAIN
2A. GATE
2B. GATE
3. SOURCE
1A 1B
2A 2B
3
AGERE
AGR19K180U
YYWWLL XXXXX
ZZZZZZZ
AGERE
AGR19180XF
YYWWLL XXXXX
ZZZZZZZ
180 W, 1930 M Hz —1990 MHz, PCS LDMOS RF Power Transistor April 2004
AGR19180EF Preliminary Data Sheet
ATC is a registered trademark of American Technical Ceramics Corp.
Kemet is a registered trademark of KRC Trade Corporation.
Vitramon is a registered trademark of Vitramon Incorporated.
Sprague is a registered trademark of Sprague Electric Company Corporation.
Murata is a registered trademark of Murata Electronics North America, Inc.
Johanson and Giga-Trim are registered trademarks of Johanson Manufacturing Corporation.
Fair-Rite is a registered trademark of Fair-Rite Products Corporation.
Taconic is a registered trademark of Tonoga Limited DBA Taconic Plastics Ltd.
Copyright © 2004 Agere Systems Inc.
All Rights Reserved
April 2004
DS04-162RFPP (Replaces D S04-080R FPP)
For additional information, contact your Agere Systems Account Manager or the following:
INTERNET: http://www.agere.com
E-MAIL: docmaster@agere.com
N. AMERICA: Agere Systems Inc., Lehigh Valley Central Campus, Room 10A-301C, 1110 American Parkway NE, Allentown, PA 18109-9138
1-800-372-2447, FAX 610-712-4106 (In CANADA: 1-800-553-2448, FAX 610 - 712-41 06)
ASIA: Agere Systems Hong Kong Ltd., Suites 3201 & 3210-12, 32/F, Tower 2, The Gateway, Harbour City, Kowloon
Tel. (852) 3129-2000, FAX (852) 3129-2020
CHINA: (86) 21-5 4614688 (Shanghai), (86) 755- 25 881122 (Shenzhen)
JAPAN: (81) 3-5421-1600 (Tokyo), KOREA: (82) 2-767-18 50 (Seoul), SINGAPORE: (65) 6778-8 833, TAIWAN: (886) 2-2725-5858 (Taipei)
EUROPE: Tel. (44) 1344 296 400
Agere Systems Inc. reserves the right to make changes to the product(s) or information contained herein without notice. No liability is assumed as a result of their use or application.
Agere is a registered trademark of Agere Systems Inc. Agere Systems and the Agere logo are trademarks of Agere Systems Inc.
RF Power Product Information
For product and application information, please visit our website: http://www.agere.com/rfpower.