MITSUBISHI MITSUBISHI SEMICONDUCTOR SEMICONDUCTOR <Application <Application Specific Specific Intelligent Intelligent Power Power Module> Module> PS11032 PS11032 FLAT-BASE FLAT-BASE TYPE TYPE INSULATED INSULATED TYPE TYPE PS11032 INTEGRATED FUNCTIONS AND FEATURES * Converter bridge for 3 phase AC-to-DC power conversion. * 3 phase IGBT inverter bridge configured by the latest 3rd. generation IGBT and diode technology. * Inverter output current capability I O (Note 1): Type Name Motor Rating IO (100%) IO (150%; 60sec) 2.25Arms PS11032 0.2 kW/200V AC 1.5Arms (Note 1) : The inverter output current is assumed to be sinusoidal and the peak current value of each of the 2, above loading cases is defined as : IOP = IO x TC < 100C INTEGRATED DRIVE, PROTECTION AND SYSTEM CONTROL FUNCTIONS: * P-Side IGBTs : Drive circuit, high-level-shift circuit, bootstrap circuit supply scheme for Single Control-Power-Source drive, and under voltage (UV) protection. * N-Side IGBTs : Drive circuit, DC-Link current sense and amplifier circuits for overcurrent protection, control-supply under-voltage protection (UV), and fault output (FO) signaling circuit. * Fault Output : N-side IGBT short circuit (SC), over-current (OC), and control supply under-voltage (UV). * Inverter Analog Current Sense : N-Side IGBT DC-Link Current Sense. * Input Interface : 5V CMOS/TTL compatible, Schmitt Trigger input, and Arm-Shoot-Through interlock protective function. APPLICATION Acoustic noise-less 0.2kW/200V AC Class 3 phase inverters, motor control applications, and motors with built-in small size inverter package PACKAGE OUTLINES 741 60 16.50.5 Terminals Assignment : 56 7 8 9 10 12 14 16 11 13 15 4 2.2 50.70.8 9 4.5 25 15 631 5 2-R 250.5 4.5 1.2 4 5.08 30 0.6 21 22 23 24 25 26 27 28 29 30.5 0.6 2-R 40 34 (25.7) 12 2 4 0.4 36 1. CBU+ 2. CBU- 3. CBV+ 4. CBV- 5. CBW+ 6. CBW- 7. VD 8. UP 9. VP 10. WP 11. UN 12. VN 13. WN 14. FO 15. Vamp 16. GND 21. P1 22. R 23. S 24. T 25. N1 26. P2 27. U 28. V 29. W 30. N2 4-R3 45.72 8.50.5 (69) 55.5 2 16.50.5 3.5 2 Type name,LotNo. (Fig. 1) Jan. 2000 MITSUBISHI SEMICONDUCTOR <Application Specific Intelligent Power Module> PS11032 FLAT-BASE TYPE INSULATED TYPE INTERNAL FUNCTIONS BLOCK DIAGRAM P1 R S T N1 P2 V(amp) +- Drive circuit V W Drive circuit Fo Circuit U UV Protection FO OC/SC Protection UP VP WP UN VN WN Input signal conditioning (Interlock circuit) VD Level shifter UV Protection N2 GND (Fig. 2) MAXIMUM RATINGS (Tj = 25C) INVERTER PART Symbol VCC Item Supply voltage Condition Applied between P2-N2 VCC(surge) Supply voltage (surge) Applied between P2-N2, Surge-value VP or VN Each output IGBT collector-emitter static voltage Applied between P2-U.V.W, U.V.W-N2 VP(S) or VN(S) Ic(Icp) Each output IGBT collector-emitter switching voltage Each output IGBT collector current Applied between P2-U.V.W, U.V.W-N2 TC = 25C, "( )" means IC peak value Ratings 450 Unit V 500 600 V V 600 V 4 (8) A Ratings 800 Unit V CONVERTER PART Symbol VRRM Item Condition Ea Repetitive peak reverse voltage Recommended AC input voltage 220 Vrms IO IFSM DC output current Surge (non-repetitive) forward current 3 rectifying circuit 1 cycle at 60Hz, peak value non-repetitive 10 100 A A I2t I2t for fusing Value for one cycle of surge current 42 A 2s CONTROL PART Ratings Unit VD, VDB VCIN Symbol Supply voltage Input signal voltage -0.5 ~ 20 -0.5 ~ +7.5 V V VFO IFO Fault output supply voltage -0.5 ~ +7.5 15 V mA 1 mA Iamp Item Fault output current DC-Link IGBT current signal Amp output current Jan. 2000 MITSUBISHI SEMICONDUCTOR <Application Specific Intelligent Power Module> PS11032 FLAT-BASE TYPE INSULATED TYPE TOTAL SYSTEM Symbol Tj Item Junction temperature Tstg TC Storage temperature Module case operating temperature VISO Isolation voltage -- Condition Ratings Unit (Note 2) -20 ~ +125 C -- (Fig. 3) -40 ~ +125 -20 ~ +100 C C 2500 Vrms 0.98 ~ 1.47 N*m 60 Hz sinusoidal AC applied between all terminals and the base plate for 1 minute. Mounting screw: M4 Mounting torque (Note 2) : The indicated values are specified considering the safe operation of all the parts within the ASIPM. The max. ratings for the ASIPM power chips (IGBT & FWDi) is Tj < 150. CASE TEMPERATURE MEASUREMENT POINT TC (Fig. 3) THERMAL RESISTANCE Symbol Rth(jc) Q Rth(jc) F Rth(jc) FR Rth(cf) Condition Item Junction to case Thermal Resistance Contact Thermal Resistance Ratings Unit Inverter IGBT (1/6) Min. -- Typ. -- Max. 6.1 C/W Inverter FWDi (1/6) Converter Di (1/6) -- -- -- -- 6.1 4.8 C/W C/W Case to fin thermal, grease applied (1 Module) -- -- 0.074 C/W ELECTRICAL CHARACTERISTICS (Tj = 25C, VD = 15V, V DB = 15V unless otherwise noted) Symbol Item VEC Collector-emitter saturation voltage FWDi forward voltage VFR IRRM Converter diode voltage Converter diode reverse current VCE(sat) ton tc(on) Switching times toff tc(off) trr FWDi reverse recovery time Condition Tj = 25C, Input = ON, Ic = 4A, VD = VDB = 15V (Shunt voltage drop not included) Tj = 25C, -IC = 4A Tj = 25C, IFR = 5A VR = VRRM , Tj = 125C 1/2 Bridge inductive, Input = 5V 0V VCC = 300V, IC = 4A, Tj = 125C VD = 15V, VDB = 15V Note: ton, toff include delay time of the internal control circuit. Short circuit endurance @VCC 400V, Input = 5V 0V (One-Shot) (Output, Arm, and Load Short Circuit Modes) -20C Tj (start) 125C, 13.5V VD = VDB 16.5V Switching SOA @VCC 400V, Input = 5V 0V, Tj 125C IC < OC trip level, 13.5V VD = VDB 16.5V Ratings Units Min. Typ. Max. -- -- 2.9 V -- -- 2.9 V -- -- -- -- 1.5 8 V mA 0.3 -- 0.6 0.43 1.5 0.8 s s -- -- 1.6 0.5 2.5 1.2 s s -- 0.12 -- s * No destruction * FO output by protection operation * No destruction * No protecting operation * No FO output Jan. 2000 MITSUBISHI SEMICONDUCTOR <Application Specific Intelligent Power Module> PS11032 FLAT-BASE TYPE INSULATED TYPE ELECTRICAL CHARACTERISTICS (Tj = 25C, VD = 15V, V DB = 15V unless otherwise noted) Symbol Item Condition ID IDB Vth(on) Vth(off) Ri fPWM Circuit current (Average) Circuit current (Average) Input on threshold voltage Input off threshold voltage Input pull-up resistor PWM input frequency tdead Arm shoot-through blocking time tint Vamp(100%) Vamp(200%) Vamp(250%) Vamp(0) OC tOC SC tSC UVD UVDr UVDB UVDBr tdV tFO IFo(H) IFo(L) Input interlock sensing Inverter DC-Link IGBT current sense voltage output signal Inverter DC-Link IGBT current sense voltage output limit Over current trip level Over current delay time Short circuit trip level Short circuit delay time Trip level Reset level Supply circuit under Trip level voltage protection Reset level Delay time Fault output pulse width Tj = 25C, VD = 15V, Vin = 5V Tj = 25C, VD = VDB = 15V, Vin = 5V Fault output current Applied between input terminal-inside power supply T C 100C, Tj 125C Relates to corresponding inputs (Note 3) T C = -20C ~ +100C Relates to corresponding input (Fig. 6) IC = IOP(100%) VD = 15V Tj = 25C (Fig. 4) IC = IOP(200%) VD = 15V IC = IOP(250%) (Fig. 4) IC = 0A Tj = 25C (Fig. 5) Tj = 25C (Fig. 5) Tj = 25C (Fig. 5) Tj = 25C (Fig. 5) T C = Tj = 25C (Fig. 5) Tj = 25C (Note 4) Open collector output (Note 4) Min. -- -- 0.8 2.5 -- 1 Ratings Typ. -- -- 1.4 3.0 50 -- Max. 50 5 2.0 4.0 -- 15 2.2 -- -- s -- 1.5 3.0 5.0 -- 4.3 -- -- -- 11.0 11.5 10.1 10.6 -- 1.0 -- -- 100 2.0 4.0 -- 50 5.3 10 8.0 2 12.0 12.5 10.8 11.3 10 1.8 -- -- -- 2.5 5.0 -- 100 8.0 -- -- -- 13.0 13.5 11.6 12.1 -- -- 1 15 ns V V V mV A s A s V V V V s ms A mA Unit mA mA V V k kHz (Note 3) : The dead-time has to be set externally by the CPU; it is not part of the ASIPM internal functions. (Note 4) : Fault output signaling is given only when the internal OC, SC, & UV protection circuits are activated. The OC, SC and UV protection (and fault output) operate for the lower arms only. The OC and SC protection Fault output is given in a pulse format while that of UV protection is maintained throughout the duration of the under-voltage condition. RECOMMENDED OPERATING CONDITIONS Ratings Symbol Item Condition VCC VD VDB VD, VDB VCIN(ON) VCIN(OFF) tdead TC fPWM tXX Supply voltage Supply voltage Supply voltage Supply voltage ripple Input on voltage Input off voltage Arm shoot-through blocking time Module case operating temperature PWM Input frequency Allowable minimum input on-pulse width Applied across P2-N2 terminals Applied between VD-GND Applied between CBU+ & CBU-, CBV+ & CBV-, CBW+ & CBW- Applied between UP * VP * WP * UN * VN * WN and GND Relates to corresponding inputs TC 100C, Tj 125C Typ. 300 15.0 15.0 -- -- -- -- -- -- -- Max. 400 16.5 16.5 +1 0.8 5.0 -- 100 15 -- Unit V V V V/s V V s C kHz s Vamp 5 INVERTER DC-LINK IGBT CURRENT ANALOGUE SIGNALING OUTPUT (TYPICAL) Min. -- 13.5 13.5 -1 0 4.0 2.2 -- -- 1 VD = 15V Tj = 25C 4 Vamp (V) Vamp (200%) 3 2 Vamp (100%) 1 0 0 200 300 100 Actual Load Peak Current (%), (IC = IO 2) (Fig. 4) Jan. 2000 MITSUBISHI SEMICONDUCTOR <Application Specific Intelligent Power Module> PS11032 FLAT-BASE TYPE INSULATED TYPE CURRENT ABNORMALITY PROTECTIVE FUNCTIONS Protection is achieved by monitoring and filtering the N-side DC-Bus current. The over-current protection is activated (after allowing a filtering time of 10 s) when the line current reaches 250% of the rated load-current IO (rms). Similarly, the short circuit protection is activated (after allowing a filtering time of 2 s) when the line current reaches twice the rated collector-current (IC ). When a current trip-level is exceeded (OC or SC), all the N-side IGBTs are intercepted (turned OFF) and a fault-signal is output. After the fault-signal output duration (1.8 ms - typ.), the interception is Reset at the following OFF input signal. However, since the fault may be repetitive, it is recommended to stop the system after the fault-signal is received and check the fault. The trip-level settings described above are summarized in the following figure: Ic(A) Short circuit trip level SC Over current trip level OC Collector current 0 2 10 tw (s) (Fig. 5) ARM-SHOOT-THROUGH INTER-LOCK PROTECTIVE FUNCTION P-Side Input Signal : VCIN(p) ON a1 b4 a4 b1 N-Side Input Signal : VCIN(n) ON a3 b2 P-Side IGBT Gate : VGE(p) 0 N-Side IGBT Gate : VGE(n) a2 b3 0 (Fig. 6) Description: (1) During the ON-State of either of the upper-arm or the lower-arm IGBT, the inter-lock protection circuit blocks any erroneous ON pulses (resulting from input noise) from triggering the other arm IGBT and thus it prevents the arm-shoot-through situation. (2) When two ON-signals are received for both the upper and the lower arms, the signal received first will be passed to the IGBT and the second signal will be blocked. The second signal will be passed to its corresponding IGBT immediately after the first signal is OFF. Note: This protective function provides no fault signaling output. The Dead-Time has to be set using the micro-controller (CPU). Operation: a1. P-side normal ON-signal P-side IGBT gate turns ON. a2. N-side erroneous ON-signal N-side IGBT gate remains OFF. a3. While P-side ON-signal remains P-side IGBT gate remains ON. a4. N-side normal ON-signal N-side IGBT gate turns ON. RECOMMENDED I/O INTERFACE CIRCUIT b1. b2. b3. b4. N-side normal ON-signal N-side IGBT gate turns ON. Simultaneous ON-signals P-side IGBT gate remains OFF. N-side receives OFF-signal N-side IGBT gate turns OFF. Immediately after (b3) P-side IGBT gate turns ON. 5V 5V VD(15V) ASIPM 5.1k R CPU R UP,VP,WP,UN,VN,WN Fo 10k V(amp) 0.1nF 0.1nF GND(Logic) (Fig. 7) Jan. 2000