Single Phase Rectifier Bridge PSB 25 IdAV VRRM = 21 A = 800-1800 V Preliminary Data Sheet VRSM VDSM (V) 800 1200 1400 1600 1800 VRRM VDRM (V) 800 1200 1400 1600 1800 Type PSB PSB PSB PSB PSB + ~ ~ 25/08 25/12 25/14 25/16 25/18 - Symbol Test Conditions IdAV IdAVM IFSM TC = 85 C, (per module) 17 A TC = 63 C, (per module) 21 A TVJ = 45 C t = 10 ms (50 Hz), sine 380 A VR = 0 t = 8.3 ms (60 Hz), sine 440 A TVJ = TVJM t = 10 ms (50 Hz), sine 360 A VR = 0 t = 8.3 ms (60 Hz), sine 400 A TVJ = 45 C t = 10 ms (50 Hz), sine 725 As VR = 0 t = 8.3 ms (60 Hz), sine 800 As TVJ = TVJM t = 10 ms (50 Hz), sine 650 As VR = 0 t = 8.3 ms (60 Hz), sine 650 As -40... + 150 150 C C -40... + 150 C 50/60 Hz, RMS t = 1 min 2500 V IISOL 1 mA 3000 i2 dt TVJ TVJM Tstg VISOL Md Maximum Ratings t=1s Mounting torque (M5) (10-32 UNF) V 2 Nm 18 20 lb.in. g Weight typ. Symbol Test Conditions IR VR = VRRM, TVJ = TVJM 0.3 mA VR = VRRM, TVJ = 25C 5 mA IF = 150 A, 2.2 V For power-loss calculations only 0.85 V 12 m per diode; DC per module per diode; DC 8.2 2.05 9.4 K/W K/W K/W per module 2.35 K/W Creeping distance on surface Creeping distance in air Max. allowable acceleration 12.7 9.4 50 mm mm m/s VF VTO rT RthJC RthJK ds dA a Characteristic Value TVJ = 25 C Features * * * * * * Package with 1/4" fast-on terminals Isolation voltage 3000 V Planar glass passivated chips Blocking voltage up to 1800 V Low forward voltage drop UL registered E 148688 Applications * * * * Supplies for DC power equipment Input rectifier for PWM inverter Battery DC power supplies Field supply for DC motors Advantages * * * Easy to mount with one screw Space and weight savings Improved temperature and power cycling capability Package style and outline Dimensions in mm (1mm = 0.0394") Data according to IEC 60747 refer to a single diode unless otherwise stated POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 2001 POWERSEM reserves the right to change limits, test conditions and dimensions http://store.iiic.cc/ I F(OV) -----I FSM 30 I FSM (A) TVJ=45C TVJ=150C A 25 380 1.6 T=150C 10 3 2 As 340 1.4 20 TVJ=45C 1.2 TVJ=150C 15 1 0 V RRM 10 0.8 1/2 V RRM 5 0.6 IF 1 V RRM T=25C 0 VF 1 V 10 Fig. 1 Forward current versus 0 10 1 t[ms] 10 2 10 3 Fig. 2 Surge overload current per diode IFSM: Crest value. t: duration voltage drop per diode 50 [W] 10 0.4 1.5 50 TC PSB 25 0.45-0.05 = RTHCA [K/W] 0.95 40 30 1.95 20 3.95 DC sin.180 rec.120 rec.60 rec.30 10 PVTOT 0 20 IFAVM 9.95 0 [A] Tamb 50 100 [K] 55 60 65 70 75 80 85 90 95 100 105 110 115 120 125 130 135 140 145 C 150 2 1 2 4 t [ms] 6 10 Fig. 3 i2dt versus time (1-10ms) per diode (or thyristor) 30 DC sin.180 rec.120 rec.60 rec.30 [A] 20 10 IdAV 0 50 100 TC(C) 150 200 150 Fig. 4 Power dissipation versus direct output current and ambient temperature Fig.5 Maximum forward current at case temperature 10 Z thJK Z thJC 8 K/W 6 4 2 Z th 0.01 0.1 1 10 t[s] Fig. 6 Transient thermal impedance per diode (or thyristor), calculated POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 2001 POWERSEM reserves the right to change limits, test conditions and dimensions http://store.iiic.cc/