DATA SH EET
Product specification
Supersedes data of April 1991 1997 Dec 05
DISCRETE SEMICONDUCTORS
BFR30; BFR31
N-channel field-effect transistors
1997 Dec 05 2
NXP Semiconductors Product specification
N-channel field-effect transistors BFR30; BFR31
DESCRIPTION
Planar epitaxial symmetrical jun ction N-channel
field-effect tra ns i stor in a plastic SOT23 packa ge.
APPLICATIONS
Low level general pu rp os e amplifiers in thick and
thin-film circuits.
PINNING - SOT23
Note
1. Drain and source are interchangeable.
PIN SYMBOL DESCRIPTION
1 d drain(1)
2 s source(1)
3ggate
CAUTION
This product is supplied in anti-static packing to prevent
damage caused by el ectrostatic discharge during
transport and ha nd lin g.
Fig.1 Simplified outline and symbol.
Marking codes:
BFR30: M1p.
BFR31: M2p.
handbook, halfpage
12
gd
s
3
Top view
MAM385
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VDS drain-source voltage 25 V
VGSO gate-sourc e voltage open drain 25 V
Ptot total power dissipation Tamb 40 C250 mW
IDSS drain current VGS =0; V
DS =10V
BFR30 4 10 mA
BFR31 1 5 mA
yfscommon-source transfer admittance ID=1mA; V
DS =10V; f=1kHz
BFR30 1 4 mS
BFR31 1.5 4.5 mS
1997 Dec 05 3
NXP Semiconductors Product specification
N-channel field-effect transistors BFR30; BFR31
LIMITING VALUES
In accordance with th e A bsolute Max i mum Rating Sys tem (IEC 134 ).
Note
1. Mounted on a ceramic substrate of 8 10 0.7 mm.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VDS drain-source voltage 25 V
VDGO drain-gate voltage open source 25 V
VGSO gate-sourc e v oltage open drain 25 V
IDdrain current 10 mA
IGforward gate current (DC) 5mA
Ptot total power dissipation Tamb 40 C; note 1; see Fig.2 250 mW
Tstg storage temperature 65 +150 C
Tjoperating junction temperature 150 C
Fig.2 Power derating curve.
handbook, halfpage
0Tamb (°C)
Ptot
(mW)
300
200
100
040 200
80 120 160
MDA245
THERMAL CHARACTE RISTI CS
Note
1. Mounted on a ceramic substrate of 8 10 0.7 mm.
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-a thermal resistance from junction to ambient note 1 430 K/W
1997 Dec 05 4
NXP Semiconductors Product specification
N-channel field-effect transistors BFR30; BFR31
CHARACTERISTICS
Tj=25C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
IGSS gate cut-off current VDS =0; V
GS =10 V 0.2 nA
IDSS drain current VGS =0; V
DS =10V
BFR30 4 10 mA
BFR31 1 5 mA
VGS gate-source voltage ID=1mA; V
DS =10V
BFR30 0.7 3V
BFR31 0 1.3 V
VGS gate-source voltage ID=50A; VDS =10V
BFR30 4V
BFR31 2V
VGSoff gate-source cut-o ff voltage ID=0.5nA; V
DS =10V
BFR30 5V
BFR31 2.5 V
yfscommon-source transfer admittance ID=1mA; V
DS =10V; f=1kHz;
Tamb =25C
BFR30 1 4 mS
BFR31 1.5 4.5 mS
yfscommon-source transfer admittance ID=200A; VDS =10V; f=1kHz;
Tamb =25C
BFR30 0.5 mS
BFR31 0.75 mS
yoscommon source output admittance ID=1mA; V
DS =10V; f=1kHz
BFR30 40 S
BFR31 25 S
yoscommon source output admittance ID=200A; VDS =10V; f=1kHz
BFR30 20 S
BFR31 15 S
Cis input capacitance VDS =10V; f=1MHz
ID=1mA 4pF
ID=0.2nA 4pF
Crs feedback ca pacitance VDS =10V; f=1MHz; T
amb =25C
ID=1mA 1.5 pF
ID=200A1.5 pF
Vnequivalent input noise voltage ID=200A; VDS =10V;
B=0.6to100Hz 0.5 V
1997 Dec 05 5
NXP Semiconductors Product specification
N-channel field-effect transistors BFR30; BFR31
Fig.3 Input characterist ics .
BFR30.
VDS =10V; T
j=25C.
handbook, halfpage
−4
10
8
2
6
4
0−3−20
max
typ
min
VGS (V)
ID
(mA)
−1
MDA657
Fig.4 Output characteristics; typical values.
BFR30.
Tj=25C.
handbook, halfpage
010
10
0
2
4
6
8
2468
MDA658
VDS (V)
ID
(mA)
VGS = 0 V
−0.5
−1.0
−1.5
−2.0
Fig.5 Input characterist ics .
BFR31.
VDS =10V; T
j=25C.
handbook, halfpage
−50
5
0
1
2
3
4
−4−3−2−1
MDA659
max
typ
min
VGS (V)
ID
(mA)
Fig.6 Output characteristics; typical values.
BFR31.
Tj=25C.
handbook, halfpage
010
5
0
1
2
3
4
2468
MDA660
VDS (V)
ID
(mA)
VGS = 0 V
−0.2
−0.4
−0.6
−0.8
−1
−1.2
1997 Dec 05 6
NXP Semiconductors Product specification
N-channel field-effect transistors BFR30; BFR31
Fig.7 Drain current as a function of junction
temperature; typical values.
BFR30.
VDS =10V.
handbook, halfpage
25 50 75 125
ID
(mA)
6
4
2
0100
MDA661
Tj (°C)
VGS = 0 V
−0.5
−1.0
−1.5
−2.0
Fig.8 Drain current as a function of junction
temperature; typical values.
BFR31.
VDS =10V.
handbook, halfpage
−1
−1.2
25 50 75 125
ID
(mA)
6
4
2
0100
MDA662
Tj (°C)
−0.2
−0.4
−0.6
−0.8
VGS =
0 V
Fig.9 Gate cut-off current as a function of junction
temperature; typical values.
VGS =10 V; VDS =0.
handbook, halfpage
20010050
IGSS
(nA)
0 150 Tj (°C)
10
1
10−1
10−2
10−3
MDA656
Fig.10 Gate-source cut-off voltage as a function of
drain current; typical values.
ID= 0.5 nA; VDS =10V; V
GS =0; T
j=25C.
handbook, halfpage
010
−6
0
−2
−4
2IDSS (mA)
VGS(off)
(V)
468
MDA663
BFR31
BFR30
1997 Dec 05 7
NXP Semiconductors Product specification
N-channel field-effect transistors BFR30; BFR31
Fig.11 Common source transfer ad mittance as a
function of drain current; typical values.
VDS =10V; f=1kHz; T
amb =25C.
handbook, halfpage
0
7.5
5
2.5
02ID (mA)
46
MDA664
yfs
(mA/V)
BFR30
BFR31
Fig.12 Common source output admittance as a
function of drain c urrent; typical values.
VDS =10V; f=1kHz; T
amb =25C.
handbook, halfpage
0
75
50
25
02ID (mA)
46
BFR30
BFR31
MDA665
yos
(μA/V)
Fig.13 Common sou rc e output admittance as a
function of drain- source voltage;
typical values.
f=1kHz; T
amb =25C.
(1) ID=4mA. (2) ID=1mA.
handbook, halfpage
30
(2) BFR30
BFR31
01020
VDS (V)
104
103
102
10
MDA666
|yos|
(μA/V)
(1)
Fig.14 Input capacitance as a function of
gate-source v oltage ; typic al values.
VDS =10V; f=1MHz; T
amb =25C.
handbook, halfpage
0−5
5
0
1
2
3
4
−1−2−3
Cis
(pF)
VGS (V)
−4
MDA667
1997 Dec 05 8
NXP Semiconductors Product specification
N-channel field-effect transistors BFR30; BFR31
Fig.15 Feedback capacita nce as a function of
gate-source v oltage ; typic al values.
VDS =10V; f=1MHz; T
amb =25C.
handbook, halfpage
0−5
−1
0
−0.2
−0.4
−0.6
−0.8
−1−2−3
Crs
(pF)
VGS (V)
−4
MDA668
Fig.16 Equivalent noise voltage source as a functio n of fr equency; typical values.
VDS =10V; T
amb =25C.
(1) BFR31; ID=1mA.
(2) BFR30; ID=4mA.
handbook, full pagewidth
10
4
10
3
10
2
10
1
10 10
2
10
3
10
4
f (Hz)
10
5
10
6
MDA669
(1)
(2)
e
n
(nV/ Hz)
1997 Dec 05 9
NXP Semiconductors Product specification
N-channel field-effect transistors BFR30; BFR31
Fig.17 Equivalent noise curr ent source as a func tion of frequency; typica l values.
handbook, full pagewidth
10
4
10
3
10
2
10
1
10 10
2
10
3
10
4
f (Hz)
10
5
10
6
MDA670
i
n
(fA/ Hz)
(1)
(2)
VDS =10V; T
amb =25C.
(1) BFR31; ID=1mA.
(2) BFR30; ID=4mA.
1997 Dec 05 10
NXP Semiconductors Product specification
N-channel field-effect transistors BFR30; BFR31
PACKAGE OUTLINE
UNIT A1
max. bpcDE e1HELpQwv
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
04-11-04
06-03-16
IEC JEDEC JEITA
mm 0.1 0.48
0.38 0.15
0.09 3.0
2.8 1.4
1.2 0.95
e
1.9 2.5
2.1 0.55
0.45 0.1
0.2
DIMENSIONS (mm are the original dimensions)
0.45
0.15
SOT23 TO-236AB
bp
D
e1
e
A
A1
Lp
Q
detail X
HE
E
wM
vMA
B
AB
0 1 2 mm
scale
A
1.1
0.9
c
X
12
3
Plastic surface-mounted package; 3 leads SOT23
1997 Dec 05 11
NXP Semiconductors Product specification
N-channel field-effect transistors BFR30; BFR31
DATA SHEET STATUS
Notes
1. Please consult the most rec ently issued document before initiating or completing a design.
2. The product s tatus of device(s) described in this document may have changed since this document was pub lished
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DOCUMENT
STATUS(1) PRODUCT
STATUS(2) DEFINITION
Objective data sheet Development This document contains data from the objective specification for product
development.
Preliminary data sheet Qualification This document contains data from the preliminary specification.
Product data sheet Production This document contains the prod uc t specification.
DEFINITIONS
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provided in a Product data she et shall define the
specification of the product as agre ed between NXP
Semiconductors and its custo m er, unless NXP
Semiconductors and cus to mer have explicitly agreed
otherwise in writing. In no event however, shall an
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product is deemed to offer functions and qualities beyond
those described in the Product data sh eet.
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However, NXP Semiconduc tors does not give any
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Applications Applications that are described herein for
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associated with their ap plications and products.
1997 Dec 05 12
NXP Semiconductors Product specification
N-channel field-effect transistors BFR30; BFR31
NXP Semiconductors does not accept any liability related
to any default, damage, cost s or problem which is based
on any weakness or default in the customer’s applications
or products, or the applic ation or use by customer’s th ird
party customer(s). Customer is responsible for doing all
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the application or use by cust omer’s third party
customer(s). NXP does not accept any liability in this
respect.
Limiting values Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) will cause permanent damage to
the device. Limiting values are stress ratings only and
(proper) operat ion of the device at these or any othe r
conditions above those given in the Recommended
operating conditions section (if present) or the
Characteristics sections of this document is not warranted.
Constant or repeated exposure to limiting values will
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© NXP B.V. 2010
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this documen t d oes not fo rm p ar t o f an y q uot ation or co ntract, is believed to be accurate a nd re liable and may be changed
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This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimer s. No cha ng es were made to the technic al content, except for package outline
drawings which were updated to the latest version.
Printed in The Netherlands R77/02/pp13 Date of release: 1997 Dec 05
