BSS138N
SIPMOS® Small-Signal-Transistor
Features
• N-channel
• Enhancement mode
• Logic level
• dv/dt rated
Maximum ratings, at Tj=25 °C, unless otherwise specified
Parameter Symbol Conditions Unit
Continuous drain current IDTA=25 °C 0.23 A
TA=70 °C 0.18
Pulsed drain current ID,pulse TA=25 °C 0.92
Reverse diode dv/dtdv/dt
ID=0.23 A, VDS=48 V,
di/dt=200 A/µs,
Tj,max=150 °C
6 kV/µs
Gate source voltage VGS ±20 V
ESD sensitivity (HBM) as per
MIL-STD 883 Class 1
Power dissipation Ptot TA=25 °C 0.36 W
Operating and storage temperature Tj, Tstg -55 ... 150 °C
IEC climatic category; DIN IEC 68-1 55/150/56
Value
VDS 60 V
RDS(on),max 3.5 Ω
ID 0.23 A
Product Summary
SOT-23
Type Package Ordering Code Tape and Reel Information Marking
BSS138N SOT-23 Q67042-S4184 E6327: 3000 pcs/reel SKs
BSS138N SOT-23 Q67042-S4190 E6433: 10000 pcs/reel SKs
Rev. 2.1 page 1 2004-04-15
BSS138N
Parameter Symbol Conditions Unit
min. typ. max.
Thermal characteristics
Thermal resistance,
junction - minimal footprint RthJA - - 350 K/W
Electrical characteristics, at Tj=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage V(BR)DSS VGS= 0 V, ID=250 µA 60 - - V
Gate threshold voltage VGS(th) VGS=V DS, ID=26 µA 0.6 1.0 1.4
Drain-source leakage current ID (off)
VDS=60 V,
VGS=0 V, Tj=25 °C - - 0.1 µA
VDS=60 V,
VGS=0 V, Tj=150 °C - 10 100
Gate-source leakage current IGSS VGS=20 V, VDS=0 V - 1 10 nA
Drain-source on-state resistance RDS(on) VGS=4.5 V, ID=0.03 A - 3.3 4.0 Ω
VGS=4.5 V, ID=0.19 A - 3.5 6.0
VGS=10 V, ID=0.23 A - 2.2 3.5
Transconductance gfs
|VDS|>2|ID|RDS(on)max,
ID=0.18 A 0.1 0.2 - S
Values
Rev. 2.1 page 2 2004-04-15
BSS138N
Parameter Symbol Conditions Unit
min. typ. max.
D
y
namic characteristics
Input capacitance Ciss -3243pF
Output capacitance Coss - 7.2 10
Reverse transfer capacitance Crss - 2.8 4.2
Turn-on delay time td(on) - 2.3 3.5 ns
Rise time tr- 3.0 4.5
Turn-off delay time td(off) - 6.7 10
Fall time tf- 8.2 12
Gate Charge Characteristics
Gate to source charge Qgs - 0.10 0.14 nC
Gate to drain charge Qgd - 0.3 0.4
Gate charge total Qg- 1.0 1.4
Gate plateau voltage Vplateau - 3.3 - V
Reverse Diode
Diode continous forward current IS- - 0.23 A
Diode pulse current IS,pulse - - 0.92
Diode forward voltage VSD
VGS=0 V, IF=0.23 A,
Tj=25 °C - 0.83 1.2 V
Reverse recovery time trr - 9.1 14.5 ns
Reverse recovery charge Qrr - 3.3 5 nC
VR=30 V, IF=0.23 A,
diF/dt=100 A/µs
TA=25 °C
Values
VGS=0 V, VDS=25 V,
f=1 MHz
VDD=30 V, VGS=10 V,
ID=0.23 A, RG=6 Ω
VDD=48 V, ID=0.23 A,
VGS=0 to 10 V
Rev. 2.1 page 3 2004-04-15
BSS138N
1 Power dissipation 2 Drain current
Ptot=f(TA)ID=f(TA); VGS≥10 V
3 Safe operation area 4 Max. transient thermal impedance
ID=f(VDS); TA=25 °C; D=0 ZthJA=f(tp)
parameter: tpparameter: D=tp/T
100 ms
10 µs
100 µs
1 ms
10 ms
DC
101
100
10-1
10-2
10-3
1 10 100
VDS [V]
ID [A]
limited by on-state
resistance
single pulse
0.01
0.02
0.05
0.1
0.2
0.5
101
100
10-1
10-2
10-3
10-4
10-5
103
102
101
100
tp [s]
ZthJA [K/W]
0
0.1
0.2
0.3
0.4
0 40 80 120 160
TA [°C]
Ptot [W]
0
0.05
0.1
0.15
0.2
0.25
0 40 80 120 160
TA [°C]
ID [A]
Rev. 2.1 page 4 2004-04-15
BSS138N
5 Typ. output characteristics 6 Typ. drain-source on resistance
ID=f(VDS); Tj=25 °C RDS(on)=f(ID); Tj=25 °C
parameter: VGS parameter: VGS
7 Typ. transfer characteristics 8 Typ. forward transconductance
ID=f(VGS); |VDS|>2|ID|RDS(on)max gfs=f(ID); Tj=25 °C
2.9 V 3.2 V 3.5 V 4 V
4.5 V
5 V
7 V
10 V
0
2
4
6
8
10
0 0.1 0.2 0.3 0.4 0.5
ID [A]
RDS(on) [Ω]
0
0.1
0.2
0.3
0.4
0.5
0.6
012345
VGS [V]
ID [A]
0
0.05
0.1
0.15
0.2
0.25
0.3
0.35
0.4
0.00 0.10 0.20 0.30 0.40
ID [A]
gfs [S]
2.9 V
3.2 V
3.5 V
4 V
4.5 V
5 V7 V
10 V
0
0.1
0.2
0.3
0.4
0.5
0.6
012345
VDS [V]
ID [A]
Rev. 2.1 page 5 2004-04-15
BSS138N
9 Drain-source on-state resistance 10 Typ. gate threshold voltage
RDS(on)=f(Tj); ID=0.23 A; VGS=10 V VGS(th)=f(Tj); VDS=VGS; ID=26 µA
parameter: ID
11 Typ. capacitances 12 Forward characteristics of reverse diode
C=f(VDS); VGS=0 V; f=1 MHz; Tj=25°C IF=f(VSD)
parameter: Tj
typ
98 %
0
2
4
6
8
-60 -20 20 60 100 140
Tj [°C]
RDS(on) [Ω]
typ
98 %
2 %
-0.4
0
0.4
0.8
1.2
1.6
2
-60 -20 20 60 100 140
Tj [°C]
VGS(th) [V]
Ciss
Coss
Crss
102
101
100
0102030
VDS [V]
C [pF]
25 °C
150 °C
25 °C, 98%
150 °C, 98%
100
10-1
10-2
10-3
0 0.4 0.8 1.2 1.6 2 2.4
VSD [V]
IF [A]
Rev. 2.1 page 6 2004-04-15
BSS138N
13 Typ. gate charge 14 Drain-source breakdown voltage
VGS=f(Qgate); ID=0.23 A pulsed VBR(DSS)=f(Tj); ID=250 µA
parameter: VDD
50
55
60
65
70
-60 -20 20 60 100 140 180
Tj [°C]
VBR(DSS) [V]
12 V
30 V
48 V
0
2
4
6
8
10
12
0 0.2 0.4 0.6 0.8 1
Qgate [nC]
VGS [V]
Rev. 2.1 page 7 2004-04-15
BSS138N
Packa
g
e Outline:
Footprint: Packaging:
Rev. 2.1 page 8 2004-04-15
BSS138N
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Infineon Technologies AG
Bereich Kommunikation
St.-Martin-Straße 53
D-81541 München
©
Infineon Technologies AG 1999
All Rights Reserved.
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For information on the types in question, please contact your nearest Infineon Technologies office.
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Rev. 2.1 page 9 2004-04-15
