AO6408
20V N-Channel MOSFET
Symbol
V
DS
V
GS
I
DM
T
J
, T
STG
Symbol Typ Max
47.5 62.5
74 110
R
θJL
37 40
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter Maximum Units
Drain-Source Voltage 20 V
Gate-Source Voltage ±12 V
AT
A
=70°C 7
Pulsed Drain Current
B
40
Continuous Drain
Current
A
T
A
=25°C I
D
8.8
T
A
=70°C 1.28 W
Power Dissipation T
A
=25°C P
D
2
Steady-State °C/W
Junction and Storage Temperature Range -55 to 150 °C
Thermal Characteristics
Maximum Junction-to-Lead
C
Steady-State °C/W
Parameter Units
Maximum Junction-to-Ambient
A
t ≤ 10s R
θJA
°C/W
Maximum Junction-to-Ambient
A
Features
VDS (V) = 20V
ID= 8.8A (VGS = 10V)
RDS(ON) < 18mΩ(VGS = 10V)
RDS(ON) < 20mΩ(VGS = 4.5V)
RDS(ON) < 25mΩ(VGS = 2.5V)
RDS(ON) < 32mΩ(VGS = 1.8V)
ESD Rating: 2000V HBM
ESD Protected
100% UIS Tested
100% Rg Tested
General Description
The AO6408 uses advanced trench technology to
provide excellent RDS(ON) and low gate charge. It offers
operation over a wide gate drive range from 1.8V to
12V. It is ESD protected. This device is suitable for use
as a load switch.
G
D
D
S
D
D
1
2
3
6
5
4
TSOP-6
Top View
G
D
S
Rev4: September 2010 www.aosmd.com Page 1 of 4
AO6408
Symbol Min Typ Max Units
BV
DSS
20 V
10
T
J
=55°C 25
I
GSS
±10 µA
BV
GSO
±12 V
V
GS(th)
0.5 0.75 1 V
I
D(ON)
40 A
14.4 18
T
J
=125°C 18.5 23
16 20 mΩ
20.5 25 mΩ
25.6 32 mΩ
g
FS
33 S
V
SD
0.72 1 V
I
S
3 A
C
iss
1810 2200 pF
C
oss
232 pF
C
rss
200 pF
R
g
1.6 2.2 Ω
Q
g
17.9 22 nC
Q
gs
1.5 nC
Q
gd
4.7 nC
t
D(on)
3.3 ns
t
r
5.9 ns
t
D(off)
44 ns
t
f
7.7 ns
t
rr
22 27 ns
Q
rr
9.8 nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
I
F
=8.8A, dI/dt=100A/µs
I
F
=8.8A, dI/dt=100A/µs
Electrical Characteristics (T
J
=25°C unless otherwise noted)
Parameter Conditions
STATIC PARAMETERS
Drain-Source Breakdown Voltage I
D
=250µA, V
GS
=0V
I
DSS
Zero Gate Voltage Drain Current V
DS
=16V, V
GS
=0V µA
Gate-Source leakage current V
DS
=0V, V
GS
=±10V
Gate Threshold Voltage V
DS
=V
GS
I
D
=250µA
V
DS
=0V, I
G
=±250uAGate-Source Breakdown Voltage
R
DS(ON)
Static Drain-Source On-Resistance
V
GS
=10V, I
D
=8.8A mΩ
V
GS
=4.5V, I
D
=8A
V
GS
=2.5V, I
D
=6A
V
GS
=1.8V, I
D
=4A
Forward Transconductance V
DS
=5V, I
D
=8.8A
Diode Forward Voltage I
S
=1A
On state drain current V
GS
=4.5V, V
DS
=5V
Reverse Transfer Capacitance
Turn-On Rise Time
Turn-Off DelayTime
Gate resistance V
GS
=0V, V
DS
=0V, f=1MHz
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Input Capacitance V
GS
=0V, V
DS
=10V, f=1MHz
Output Capacitance
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Turn-Off Fall Time
SWITCHING PARAMETERS
Total Gate Charge V
GS
=4.5V, V
DS
=10V, I
D
=8.8A
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime V
GS
=10V, V
DS
=10V, R
L
=1.1Ω,
R
GEN
=3Ω
A: The value of RθJA is measured with the device mounted on 1in2FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The
value in any a given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA
curve provides a single pulse rating. Rev3: August 2005
Rev4: September 2010 www.aosmd.com Page 2 of 4
AO6408
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
10
20
30
40
012345
ID(A)
VDS (Volts)
Fig 1: On-Region Characteristics
VGS=1.5V
2V2.5V 4.5V
10V
0
4
8
12
16
20
0 0.5 1 1.5 2 2.5
ID(A)
VGS(Volts)
Figure 2: Transfer Characteristics
0
10
20
30
40
0 5 10 15 20
RDS(ON) (mΩ
Ω
Ω
Ω)
ID(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
0.0 0.2 0.4 0.6 0.8 1.0 1.2
IS(A)
VSD (Volts)
Figure 6: Body-Diode Characteristics
25°C
125°C
0.8
1
1.2
1.4
1.6
0 25 50 75 100 125 150 175
Normalized On-Resistance
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
VGS=2.5V,6A
V
GS
=10V, 8.8A
VGS=4.5V, 8A
0
10
20
30
40
0246810
RDS(ON) (mΩ
Ω
Ω
Ω)
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
25°C
125°C
V
DS
=5V
VGS=2.5V
VGS=4.5V
VGS=10V
ID=6A
VGS=1.8V, 4A
VGS=1.8V
25°C
125
°
C
Rev4: September 2010 www.aosmd.com Page 3 of 4
AO6408
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
1
2
3
4
5
0 4 8 12 16 20
VGS (Volts)
Qg(nC)
Figure 7: Gate-Charge Characteristics
0
400
800
1200
1600
2000
2400
2800
0 5 10 15 20
Capacitance (pF)
VDS (Volts)
Figure 8: Capacitance Characteristics
Ciss
0
10
20
30
40
0.001 0.01 0.1 1 10 100 1000
Power (W)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-
to-Ambient (Note E)
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Zθ
θ
θ
θJA Normalized Transient
Thermal Resistance
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Coss C
0.1
1.0
10.0
100.0
0.1 1 10 100
ID(Amps)
VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
100
µ
s
10ms
1ms
0.1s
1s
10s
DC
RDS(ON)
limited
TJ(Max)=150°C
TA=25°C
10
µ
s
VDS=10V
ID=8.8A
Single Pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=62.5°C/W
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ(Max)=150°C
TA=25°C
Rev4: September 2010 www.aosmd.com Page 4 of 4