B1
B2
E2
E2
C2E1
B2X
B1X E1
C1
50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: semi@sanrex.com
QCA200AA100
TRANSISTOR MODULE
UL;E76102（M）
QCA200AA100 is a dual Darlington power transistor module with has series-connected
high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast
recovery diode. The mounting base of the module is electrically isolated from
semiconductor elements for simple heatsink construction.
●IC=200A, VCEX=1000V
●Low saturation voltage for higher efficiency
●High DC current gain hFE
●Isolated monuting base
（Applications）
Motor Control（VVVF）, AC/DC Servo, UPS,
Switching Power Supply, Ultrasonic Application
■Maximum Ratings （Tj＝25℃unless otherwise specified）
■Electrical Characteristics
Symbol Item Conditions Ratings
QCA200AA100 Unit
VCBO Collector-Base Voltage Emitter open 1000 V
VCEX Collector-Emitter Voltage VBE＝−2V 1000 V
V
CEX（SUS）
Collector-Emitter Sustaning Voltage
IC＝40A，IB2＝−5A 1000 V
Emitterr-Base Voltage VVEBO Collector open 10
ICCollector Current 200 A
−ICReverse Collector Current 200 A
IBBase Current 10 A
PC
Collector-Emitter power dissipation
TC＝25℃1560 W
TjJunction Temperature −40 to 150 ℃
Tstg Storage Temperature −40 to 125 ℃
VISO Isolation Voltage(RMS) A.C. 1minute 2500 V
Mounting Torque（M6）Recommended Value 2.5
-
3.9（25
-
40）4.7（48）N･m
(㎏f･B)
Mass Typical Value 675 g
4ｰφ6.5
252531.5
3-M6
Tab＃110
t=0.5
27
34.5
NAMEPLATE
15
E2 B2B1 E1
93±0.2
90max.31max.
70±0.2
B2X B1X
113max
C2E1 E2 C
Unit：A
Symbol Item Conditions Ratings
Min. Max
4.00
500
75
2.5
3.5
3.0
15.0
3.0
1.8
0.08
0.35
Unit
ICBO Collector Cut-off Current VCB＝1000V Emitter open mA
IEBO Emitter Cut-off Current VEB＝10V Collector open mA
hFE D.C. Current Gain Ic＝200A，VCE＝2.8V 100
Ic＝200A，VCE＝5V
VCE(sat)
Collector-Emitter Sturation Voltage
Ic＝200A，IB＝4A V
VBE(sat)
Base-Emitter Saturation Voltage
Ic＝200A，IB＝4A V
μs
V
℃/W
ton On Time
Storage Time
Fall Tjme
tstg
tf
Vcc＝600V，Ic＝200A
IB1＝4A，IB2＝−4A
−Ic＝200A
Transistor part
Diode part
VECO
Rth(j-c)
Switching Time
Collector-Emitter Reverse Voltage
(Diode forward voltage drop)
Thermal Impedance
(Junction to case)
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SanRex
®
SanRex 50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: semi@sanrex.com
QCA200AA100
Tj 125℃
Tj 25℃
VCE 5V
VCE 2.8V
１０００
２０００
５００
２００
１００
５０
２０
２
１ ５ １０ ２０ ５０ １００２００ ５００
Typical
D.C.CurrentGain
CollectorCurrentIc（A）
DCCurrentGainhFE
v
BE
(sat)
v
CE
(sat)
Typical
Tj 125℃
IB4.0A
Tj 25℃
１０
１
５
２
１０
０
５
１０
０ ２ ５ １０
１ ２ ５ ２ ５
１０
２
SaturationCharacteristics
CollectorCurrentIc（A）
Collector-EmitterVoltageVＣＥ（V）
Base-EmitterVoltageVBE（V）
５
５
１０
3
２
２
５
１０
２
１０
１
２
１０
２ ２ ２５５ １０
３
Tj 25℃
50
μs
100
μs
200
μs
Non-Repetitive
Singlepulse
PulseWide
ForwardBiasSafeOperatingArea
Collector-EmitterVoltageVCE（V）
CollectorCurrentIc（A）
Tj 25℃
IB2 −8A
IB2 −4A
４００
３５０
３００
２５０
２００
１５０
１００
５０
０
０ ２００ ４００ ６００ ８００ １０００ １２００
ReverseBiasSafeOperatingArea
Collector-EmitterVoltageVCE（V）
CollectorCurrentIc（A）
１００
５０
０
０ ５０ １００ １５０
CollectorCurrentDeratingFactor
CaseTemperature（℃）
DeratingFactor（%）
SecondBreakdownLimit
ThermalLimit
Tj 125℃
Tj 25℃
５
２
１０
２
５
２
５
２
１０
１
１０
０
０ １ ２
ForwardVoltageofFreeWheelingDiode
Emitter-CollectorVoltageVECO（V）
CollectorReverseCurrent-Ic（A）
Typical
IB1 4A
IB2 −4A
Vcc 600V
Tj 25℃
ts
ton
tf
２
２
１０
１
１０
０
２
５
５
１０
-１
５
１００
０ ２００
CollectorCurrentVsSwitchingTime
CollectorCurrentIc（A）
SwitchingTimetontfts（μs）
200μec〜100msec
Maximum TransistorPart
100msec〜100sec
１０
-１
１０
-２
１０
-３
５
２
２
２
５
５
５ １０
-３ １０
-１
２ ５
１０
-１ ２
２
５ １０
０ １０
２
２ ５
５
５
１０
-２
１０
１
２
２
TransientThermalImpedance
Timet（sec）
TransientThermalImpedanceθj-c（℃/W）
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