1N6675UR-1 - 1N6677UR-1 plus CDLL0.5A20 - CDLL0.5A40 Available on commercial versions 200 and 500 mA Schottky Barrier Rectifier Qualified per MIL-PRF-19500/610 Qualified Levels*: JAN, JANTX, JANTXV and JANS DESCRIPTION The 1N6675UR-1 through 1N6677UR-1 series of Schottky barrier rectifiers provides a selection of 200 or 500 mA ratiings in surface mount, hard glass DO-213AA MELF package. The 1N6677UR-1 is also available in JAN, JANTX, JANTXV, and JANS military qualifications. DO-213AA MELF Package Important: For the latest information, visit our website http://www.microsemi.com. FEATURES * * * * * * JEDEC registered 1N6675 through 1N6677 number series. Hermetically sealed. Metallurgically bonded. Double plug construction. *JAN, JANTX, JANTXV and JANS qualifications are available per MIL-PRF-19500/610 on 1N6677UR-1 only. RoHS compliant versions are available on all commercial types. Also available in: DO-35 (DO-204AH) package (axial-leaded) 1N6675-1 - 1N6677-1 APPLICATIONS / BENEFITS * * * Leadless package for surface mounting. Ideal for high-density situations. Non-sensitive to ESD per MIL-STD-750 method 1020. MAXIMUM RATINGS @ T A = 25 C unless otherwise stated Parameters/Test Conditions Junction Temperature Storage Temperature Thermal Resistance, Junction-to-End Cap Surge Peak Forward Current at 8.3 ms half-sine wave for 1N6677UR-1 Average Rectified Output Current: (1) 1N6675UR-1 - 1N6677UR-1 CDLL0.5A20 - CDLL0.5A40 Solder Temperature @ 10 s Symbol TJ T STG R JEC I FSM Value -65 to +125 -65 to +150 100 5 Unit C C C/W A (pk) IO 200 500 260 mA NOTES: 1. See Figure 1 for derating. o C MSC - Lawrence 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 Tel: (978) 620-2600 Fax: (978) 689-0803 MSC - Ireland Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Website: www.microsemi.com T4-LDS-0302-1, Rev. 1 (6/13/13) (c)2013 Microsemi Corporation Page 1 of 6 1N6675UR-1 - 1N6677UR-1 plus CDLL0.5A20 - CDLL0.5A40 MECHANICAL and PACKAGING * * * * * * * * CASE: Hermetically sealed glass case package. TERMINALS: Tin/lead plated or RoHS compliant matte-tin (commercial grade only) over copper clad steel. Solderable per MILSTD-750, method 2026. POLARITY: Cathode end is banded. MOUNTING: The axial coefficient of expansion (COE) of this device is approximately +6PPM/C. The COE of the mounting surface system should be selected to provide a suitable match with this device. MARKING: Part number. TAPE & REEL option: Standard per EIA-296. Consult factory for quantities. WEIGHT: Approximately 0.04 grams. See Package Dimensions on last page. PART NOMENCLATURE 1N6675UR-1 - 1N6677UR-1: 1N6675 UR -1 (e3) JEDEC type number (see Electrical Characteristics table) RoHS Compliance e3 = RoHS compliant Blank = non-RoHS compliant MELF Surface Mount Metallurgically Bonded 1N6677UR-1 only: JAN 1N6677 UR -1 (e3) Reliability Level* JAN = JAN level JANTX = JANTX level JANTXV = JANTXV level JANS = JANS level RoHS Compliance e3 = RoHS compliant (on commercial grade only) Blank = non-RoHS compliant Metallurgically Bonded JEDEC type number (see Electrical Characteristics table) MELF Surface Mount CDLL0.5A20 - CDLL0.5A40: CDLL 0.2A 20 (e3) Microsemi Designation RoHS Compliance e3 = RoHS compliant Blank = non-RoHS compliant Amp Rating Working Peak Reverse Voltage Rating (V RWM ) T4-LDS-0302-1, Rev. 1 (6/13/13) (c)2013 Microsemi Corporation Page 2 of 6 1N6675UR-1 - 1N6677UR-1 plus CDLL0.5A20 - CDLL0.5A40 SYMBOLS & DEFINITIONS Definition Symbol C f IR Capacitance: The capacitance in pF at a frequency of 1 MHz and specified voltage. frequency Reverse Current: The dc current flowing from the external circuit into the cathode terminal at the specified voltage V R . Surge Peak Forward Current: The forward current including all nonrepetitive transient currents but excluding all repetitive transients (ref JESD282-B) Average Rectified Output Current: The Output Current averaged over a full cycle with a 50 Hz or 60 Hz sine-wave input and a 180 degree conduction angle. Breakdown Voltage: A voltage in the breakdown region. Forward Voltage: A positive dc anode-cathode voltage the device will exhibit at a specified forward current. Reverse Voltage: A positive dc cathode-anode voltage below the breakdown region. Working Peak Reverse Voltage: The peak voltage excluding all transient voltages (ref JESD282-B). Also sometimes known historically as PIV. I FSM IO V (BR) VF VR V RWM o ELECTRICAL CHARACTERISTICS @ 25 C unless otherwise specified 200 mA options: TYPE NUMBER (Note 1) 1N6675UR-1 1N6676UR-1 1N6677UR-1 WORKING PEAK REVERSE VOLTAGE MAXIMUM FORWARD VOLTAGE V RWM V F @ 20 mA V (pk) 20 30 40 Volts 0.37 0.37 0.37 MAXIMUM FORWARD VOLTAGE MAXIMUM FORWARD VOLTAGE V F @ 200 mA Volts 0.50 0.50 0.50 V F @ 630 mA Volts 0.70 0.70 0.70 MAXIMUM REVERSE LEAKAGE CURRENT I RM @ V RM T J = +25 C A 5.0 5.0 5.0 MAXIMUM CAPACITANCE @ VR = 0 VOLTS f = 1.0 MHz T J = 100 C mA 0.60 0.60 0.60 CT pF 50 50 50 NOTE: 1. These numbers can also be ordered as CDLL6675 or CDLL0.2A20, CDLL6676 or CDLL0.2A30, and CDLL6677 or CDLL0.2A40. 500 mA options: TYPE NUMBER WORKING PEAK REVERSE VOLTAGE CDLL0.5A20 CDLL0.5A30 CDLL0.5A40 T4-LDS-0302-1, Rev. 1 (6/13/13) MAXIMUM FORWARD VOLTAGE V RWM V F @ 100 mA V (pk) 20 30 40 Volts 0.50 0.50 0.50 MAXIMUM FORWARD VOLTAGE V F @ 500 mA Volts 0.65 0.65 0.65 MAXIMUM REVERSE LEAKAGE CURRENT I RM @ V RM TJ = T J = 100 +25 C C mA A 10.0 1.0 10.0 1.0 10.0 1.0 (c)2013 Microsemi Corporation MAXIMUM CAPACITANCE @ VR = 0 VOLTS f = 1.0 MHz CT pF 50 50 50 Page 3 of 6 1N6675UR-1 - 1N6677UR-1 plus CDLL0.5A20 - CDLL0.5A40 Sinewave Operation Maximum Io Rating (mA) GRAPHS T EC (C) (Solder Points) FIGURE 1 Temperature power derating for 1N6677UR-1 NOTES: 1. Maximum theoretical derate design curve. This is the true inverse of the worst case thermal resistance value. All devices are capable of operating at TJ specified on this curve. Any parallel line to this curve will intersect the appropriate power for the desired maximum TJ allowed. 2. Derate design curve constrained by the maximum junction temperatures and power rating specified. (See Maximum Ratings.) 3. Derate design curve chosen at TJ 110 C to show power rating where most users want to limit TJ in their application. T4-LDS-0302-1, Rev. 1 (6/13/13) (c)2013 Microsemi Corporation Page 4 of 6 1N6675UR-1 - 1N6677UR-1 plus CDLL0.5A20 - CDLL0.5A40 Theta (C/W) GRAPHS Time (s) FIGURE 2 Thermal impedance curve for 1N6677UR-1 T4-LDS-0302-1, Rev. 1 (6/13/13) (c)2013 Microsemi Corporation Page 5 of 6 1N6675UR-1 - 1N6677UR-1 plus CDLL0.5A20 - CDLL0.5A40 PACKAGE DIMENSIONS DIM BD BL ECT S INCH MIN MAX 0.063 0.067 0.130 0.146 0.016 0.022 0.001 - MILLIMETERS MIN MAX 1.60 1.70 3.30 3.71 0.41 0.56 0.03 - NOTES: 1. Dimensions are in inches. Millimeters are given for information only. 2. Dimensions are pre-solder dip. 3. Referencing to dimension S, minimum clearance of glass body to mounting surface on all orientations. 4. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. PAD LAYOUT A B C T4-LDS-0302-1, Rev. 1 (6/13/13) (c)2013 Microsemi Corporation INCH 0.200 0.055 0.080 mm 5.08 1.40 2.03 Page 6 of 6