© 2000 IXYS All rights reserved 1 - 2
Pulse test: Pulse Width = 5 ms, Duty Cycle < 2.0 %
Data according to IEC 60747 and per diode unless otherwise specified
IXYS reserves the right to change limits, Conditions and dimensions.
Power Schottky Rectifier
Features
International standard package
Very low VF
Extremely low switching losses
Low IRM-values
Epoxy meets UL 94V-0
Applications
Rectifiers in switch mode power
supplies (SMPS)
Free wheeling diode in low voltage
converters
Advantages
High reliability circuit operation
Low voltage peaks for reduced
protection circuits
Low noise switching
Low losses
Dimensions see outlines.pdf
A
C
C (TAB)
TO-263 AB TO-220 AC
(AS-Type) (A-Type)
CA
C (TAB)
A = Anode, C = Cathode , TAB = Cathode
AC
Symbol Conditions Maximum Ratings
IFRMS 35 A
IFAV TC = 155°C; rectangular, d = 0.5 16 A
IFSM TVJ = 45°C; tp = 10 ms (50 Hz), sinev 230 A
EAS IAS = 9.5 A; L = 180 µH; TVJ = 25°C; non repetitive 10 mJ
IAR VA =1.5 • VRRM typ.; f=10 kHz; repetitive 1 A
(dv/dt)cr 5000 V/ms
TVJ -55...+175 °C
TVJM 175 °C
Tstg -55...+150 °C
Ptot TC = 25°C 105 W
Mdmounting torque (A-Type only) 0.4...0.6 Nm
Weight typical 2 g
IFAV = 16 A
VRRM = 100 V
VF= 0.64 V
007
DSS 16-01A
DSS 16-01AS
VRSM VRRM Type
V V
100 100 DSS 16-01A DSS 16-01AS
Symbol Conditions Characteristic Values
typ. max.
IR TVJ = 25°C VR= VRRM 0.5 mA
TVJ = 125°C VR= VRRM 5mA
VFIF = 15 A; TVJ = 125°C 0.64 V
IF = 15 A; TVJ = 25°C 0.79 V
IF = 30 A; TVJ = 125°C 0.76 V
RthJC 1.4 K/W
RthCH 0.5 K/W
© 2000 IXYS All rights reserved 2 - 2
DSS 16-01A
DSS 16-01AS
0.0 0.2 0.4 0.6 0.8 1.0
1
10
100
0 20406080100
0.0001
0.001
0.01
0.1
1
10
515250102030
0
5
10
15
20
25
30
0.0001 0.001 0.01 0.1 1 10
0.01
0.1
1
04080120160
0
5
10
15
20
25
30
35
40
IF(AV)
TC
°C IF(AV)
ts
K/W
10 100 1000 10000
100
1000
10000
IFSM
tP
A
0 20406080100
10
100
1000
CT
IR
IF
A
VFVRVR
V
pF
V
mA
A
P(AV)
W
ZthJC
V
Single Pulse
(Thermal Resistance)
DSS 16-01A
A
µs
TVJ=175°C
150°C
125°C
100°C
50°C
25°C
TVJ =
175°C
150°C
125°C
25°C
TVJ= 2 5°C
d=0.5
d =
DC
0.5
0.33
0.25
0.17
0.08
75°C
DC
0.08
D=0.5
0.33
0.25
0.17
007
Fig. 3 Typ. junction capacitance CT
versus reverse voltage VR
Fig. 2 Typ. value of reverse current IR
versus reverse voltage VR
Fig. 1 Maximum forward voltage
drop characteristics
Fig. 4 Average forward current IF(AV)
versus case temperature TC
Fig. 5 Forward power loss
characteristics
Fig. 6 Transient thermal impedance junction to case at various duty cycles Note: All curves are per diode