MITSUBISHI TRANSISTOR MODULES QM200DY-HB HIGH POWER SWITCHING USE INSULATED TYPE QM200DY-HB * * * * * IC Collector current ........................ 200A VCEX Collector-emitter voltage ........... 600V hFE DC current gain............................. 750 Insulated Type UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICATION Inverters, Servo drives, DC motor controllers, NC equipment, Welders OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 3-M6 B2X 6 14 C2E1 C1 B2 B2 E2 62 8 5 5 8 48 E2 15 30 B2X E2 E1 B1X 6 B1 23.5 23 C2E1 23 93 E2 C1 6.5 108 B1X E1 B1 30 16 LABEL Tab#110, t=0.5 7 7.5 18 5 18 5 18 Feb.1999 MITSUBISHI TRANSISTOR MODULES QM200DY-HB HIGH POWER SWITCHING USE INSULATED TYPE ABSOLUTE MAXIMUM RATINGS Symbol (Tj=25C, unless otherwise noted) Ratings Unit VCEX (SUS) Collector-emitter voltage IC=1A, VEB=2V 600 V VCEX Collector-emitter voltage VEB=2V 600 V VCBO Collector-base voltage Emitter open 600 V VEBO Emitter-base voltage Collector open IC Collector current DC -IC Collector reverse current DC (forward diode current) 200 A PC Collector dissipation TC=25C 1240 W IB Base current DC 12 A -ICSM Surge collector reverse current (forward diode current) Peak value of one cycle of 60Hz (half wave) 2000 A Tj Junction temperature -40~+150 C Tstg Storage temperature -40~+125 C Viso Isolation voltage Parameter Conditions Charged part to case, AC for 1 minute Main terminal screw M6 -- Mounting torque Mounting screw M6 -- Typical value Weight ELECTRICAL CHARACTERISTICS 7 V 200 A 2500 V 1.96~2.94 N*m 20~30 kg*cm 1.96~2.94 N*m 20~30 kg*cm 470 g (Tj=25C, unless otherwise noted) Limits Symbol Test conditions Parameter Min. Typ. Max. Unit ICEX Collector cutoff current VCE=600V, VEB=2V -- -- 4.0 mA ICBO Collector cutoff current VCB=600V, Emitter open -- -- 4.0 mA IEBO Emitter cutoff current VEB=7V -- -- 200 mA VCE (sat) Collector-emitter saturation voltage -- -- 2.5 V VBE (sat) Base-emitter saturation voltage -- -- 3.0 V -VCEO Collector-emitter reverse voltage -IC=200A (diode forward voltage) -- -- 1.8 V hFE DC current gain IC=200A, VCE=2.5V 750 -- -- -- -- -- 2.5 s Switching time VCC=300V, IC=200A, IB1=400mA, -IB2=4A -- -- 10 s -- -- 2.0 s Transistor part (per 1/2 module) -- -- 0.1 C/ W Diode part (per 1/2 module) -- -- 0.33 C/ W Conductive grease applied (per 1/2 module) -- -- 0.075 C/ W IC=200A, IB=260A ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal resistance (case to fin) Feb.1999 MITSUBISHI TRANSISTOR MODULES QM200DY-HB HIGH POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES COMMON EMITTER OUTPUT CHARACTERISTICS (TYPICAL) DC CURRENT GAIN VS. COLLECTOR CURRENT (TYPICAL) A Tj=25C IB=1 DC CURRENT GAIN hFE 0mA IB=50 mA IB=260 400 300 A IB=100m 200 IB=50mA 100 0 0 1 2 3 4 COLLECTOR-EMITTER VOLTAGE 10 0 7 5 4 3 2 Tj=25C VCE=2.5V 3.0 3.4 3.8 BASE-EMITTER VOLTAGE VCE=2.5V 10 3 7 5 4 3 2 4.2 10 1 7 5 4 3 2 VBE(sat) 10 0 7 5 4 3 10 1 ton, ts, tf (s) IC=200A IC=100A Tj=25C Tj=125C 0 10 -2 2 3 4 5 710 -1 2 3 4 5 7 10 0 2 3 4 5 7 10 1 BASE CURRENT IB (A) VCE(sat) 2 3 4 5 7 10 2 2 3 4 5 7 10 3 SWITCHING TIME VS. COLLECTOR CURRENT (TYPICAL) SWITCHING TIME COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) IC=300A 1 IB=260mA Tj=25C Tj=125C 2 COLLECTOR CURRENT IC (A) 5 3 2 3 4 5 7 10 3 3 VBE (V) 4 2 3 4 5 7 10 2 SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE (TYPICAL) 2 Tj=25C Tj=125C COLLECTOR CURRENT IC (A) VCE (sat), VBE (sat) (V) BASE CURRENT IB (A) 3 2 2.6 VCE=5.0V VCE (V) COMMON EMITTER INPUT CHARACTERISTIC (TYPICAL) 10 -1 7 5 4 3 2.2 10 4 7 5 4 3 2 10 2 10 1 5 SATURATION VOLTAGE COLLECTOR CURRENT IC (A) 500 101 7 5 4 3 2 ts ton 10 0 7 5 4 3 2 10 -1 10 1 VCC=300V IB1=400mA IB2=-4A Tj=25C Tj=125C tf 2 3 4 5 7 10 2 2 3 4 5 7 10 3 COLLECTOR CURRENT IC (A) Feb.1999 MITSUBISHI TRANSISTOR MODULES QM200DY-HB HIGH POWER SWITCHING USE INSULATED TYPE SWITCHING TIME VS. BASE CURRENT (TYPICAL) REVERSE BIAS SAFE OPERATING AREA 400 3 ts, tf (s) SWITCHING TIME 10 1 7 5 4 3 2 ts 10 0 7 5 4 3 10 0 tf 2 3 4 5 7 10 1 IB2=-3.5A COLLECTOR CURRENT IC (A) VCC=300V IC=200A IB1=400mA Tj=25C Tj=125C 2 350 IB2=-10A 300 200 150 100 50 0 2 3 4 5 7 10 2 BASE REVERSE CURRENT -IB2 (A) 0.09 0.08 Zth (j-c) (C/ W) DERATING FACTOR (%) 80 70 60 50 COLLECTOR DISSIPATION 40 30 20 10 0 0 VCE (V) TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (TRANSISTOR) 10 0 2 3 5 7 10 1 0.10 0.07 0.06 0.05 0.04 0.03 0.02 0.01 0 10 -3 2 3 4 5 7 10 -2 2 3 4 5 7 10 -1 2 3 4 5 7 10 0 TIME (s) SECOND BREAKDOWN AREA 90 20 40 60 80 100 120 140 160 CASE TEMPERATURE COLLECTOR REVERSE CURRENT -IC (A) COLLECTOR CURRENT IC (A) 10 1 7 5 3 2 TC =25C NON-REPETITIVE 10 0 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 COLLECTOR-EMITTER VOLTAGE VCE (V) 100 s DC 100 200 300 400 500 600 700 800 DERATING FACTOR OF F. B. S. O. A. 50 s 0 10 s 0 50 s 1m ms 10 10 2 7 5 3 2 0 COLLECTOR-EMITTER VOLTAGE FORWARD BIAS SAFE OPERATING AREA 10 3 7 5 3 2 Tj=125C 250 10 3 7 5 4 3 2 TC (C) REVERSE COLLECTOR CURRENT VS. COLLECTOR-EMITTER REVERSE VOLTAGE (DIODE FORWARD CHARACTERISTICS) (TYPICAL) 10 2 7 5 4 3 2 10 1 0.4 Tj=25C Tj=125C 0.8 1.2 1.6 2.0 2.4 COLLECTOR-EMITTER REVERSE VOLTAGE -VCEO (V) Feb.1999 MITSUBISHI TRANSISTOR MODULES QM200DY-HB HIGH POWER SWITCHING USE INSULATED TYPE REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 3 3 2000 2 1600 Irr (A), Qrr (c) 10 2 1200 800 400 0 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 CONDUCTION TIME (CYCLES AT 60Hz) 10 0 Irr 7 5 4 Qrr 3 2 trr 10 1 7 5 4 3 10 1 trr (s) SURGE COLLECTOR REVERSE CURRENT -ICSM (A) RATED SURGE COLLECTOR REVERSE CURRENT (DIODE FORWARD SURGE CURRENT) 2 3 4 5 7 10 2 VCC=300V IB1=400mA 10 -1 IB2=-4A Tj=25C Tj=125C 3 2 3 4 5 7 10 3 FORWARD CURRENT IF (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (DIODE) 10 0 2 3 4 5 7 10 1 2 0.40 Zth (j-c) (C/ W) 0.32 0.24 0.16 0.08 0 10 -3 2 3 4 5 7 10 -2 2 3 4 5 7 10 -1 2 3 4 5 7 10 0 TIME (s) Feb.1999