AON2240
40V N-Channel MOSFET
General Description Product Summary
V
DS
I
D
(at V
GS
=10V) 8A
R
DS(ON)
(at V
GS
=10V) < 21mΩ
R
DS(ON)
(at V
GS
=4.5V) < 29mΩ
Symbol
V
The AON2240 combines advanced trench MOSFET
technology with a low resistance package to provide
extremely low R
DS(ON)
. This device is ideal for load switch
and battery protection applications.
V
Maximum Units
40V
Drain-Source Voltage
40
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
DFN 2x2B
Top View Bottom View
Pin 1
D
D
G
D
D
SD
SPin 1
G
D
S
V
DS
V
GS
I
DM
T
J
, T
STG
Symbol
t ≤ 10s
Steady-State
V
A
Continuous Drain
Current
G
I
D
T
A
=25°C
°C
Thermal Characteristics
Typ Max
Maximum Junction-to-Ambient
A
°C/W
R
θJA
37
66 °C/W
8
Gate-Source Voltage
W
T
A
=25°C
T
A
=70°C 1.8
Drain-Source Voltage
40
Maximum Junction-to-Ambient
A D
80
-55 to 150
Units
Junction and Storage Temperature Range
45
Parameter
V
2.8
T
A
=100°C
±20
Power Dissipation
A
32Pulsed Drain Current
C
P
D
6
Rev 0 : Dec 2011
www.aosmd.com Page 1 of 5
AON2240
Symbol Min Typ Max Units
BV
DSS
40 V
V
DS
=40V, V
GS
=0V 1
T
J
=55°C 5
I
GSS
±100 nA
V
GS(th)
Gate Threshold Voltage 1.4 1.9 2.4 V
I
D(ON)
32 A
16.8 21
T
J
=125°C 24.5 31
22.6 29 mΩ
g
FS
33 S
V
SD
0.75 1 V
I
S
3.5 A
C
iss
415 pF
C
oss
112 pF
C
rss
11 pF
R
g
1 2.2 3.5 Ω
Q
g
(10V)
6.5 12 nC
Q
g
(4.5V)
3 6 nC
Q
gs
1.2 nC
Q
gd
1.1 nC
t
D(on)
4 ns
t
3
ns
mΩ
Electrical Characteristics (T
J
=25°C unless otherwise noted)
STATIC PARAMETERS
Parameter Conditions
On state drain current
I
D
=250µA, V
GS
=0V
Drain-Source Breakdown Voltage
R
DS(ON)
Static Drain-Source On-Resistance
I
DSS
V
DS
=0V, V
GS
=±20V
V
GS
=0V, V
DS
=20V, f=1MHz
µA
V
DS
=V
GS，
I
D
=250µA
V
GS
=10V, I
D
=8A
Zero Gate Voltage Drain Current
Gate-Body leakage current
V
GS
=4.5V, I
D
=4A
Gate Drain Charge
Gate resistance
Total Gate Charge
Reverse Transfer Capacitance
Total Gate Charge
SWITCHING PARAMETERS
V
DS
=5V, I
D
=8A
Forward Transconductance
V
GS
=10V, V
DS
=5V
I
S
=1A,V
GS
=0V
Turn-On DelayTime
Diode Forward Voltage
V
GS
=0V, V
DS
=0V, f=1MHz
Gate Source Charge
Input Capacitance
Output Capacitance
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
V
GS
=10V, V
DS
=20V, I
D
=8A
V
=10V, V
=20V, R
=2.5
Ω
,
Turn-On Rise Time
t
r
3
ns
t
D(off)
15 ns
t
f
2 ns
t
rr
12.5 ns
Q
rr
3.5 nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Turn-Off DelayTime
V
GS
=10V, V
DS
=20V, R
L
=2.5
Ω
,
R
GEN
=3Ω
Body Diode Reverse Recovery Charge I
F
=8A, dI/dt=100A/µs
Body Diode Reverse Recovery Time I
F
=8A, dI/dt=100A/µs
Turn-On Rise Time
Turn-Off Fall Time
A. The value of RθJA is measured with the device mounted on 1in2FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The
Power dissipation PDSM is based on R θJA t ≤10s value and the maximum allowed junction temperature of 150°C. The value in any given
application depends on the user's specific board design.
B. The power dissipation PDis based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
Rev 0 : Dec. 2011 www.aosmd.com Page 2 of 5
AON2240
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
5
10
15
20
0123456
ID(A)
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
0
10
20
30
40
50
0 4 8 12
RDS(ON) (mΩ)
ID(A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
0.8
1
1.2
1.4
1.6
1.8
0 25 50 75 100 125 150 175
Normalized On-Resistance
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
VGS=10V
ID=8A
VGS=4.5V
ID=4A
25°C
125°C
VDS=5V
VGS=10V
VGS=4.5V
0
5
10
15
20
25
30
0 1 2 3 4 5
ID(A)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
V
GS
=2.5V
3.5V
4.5V
3V
10V
Voltage (Note E)
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
1.0E+02
0.0 0.2 0.4 0.6 0.8 1.0 1.2
IS(A)
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
25°C
125°C
(Note E)
0
10
20
30
40
50
60
2 4 6 8 10
RDS(ON) (mΩ)
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
ID=8A
25°C
125°C
Rev 0: Dec 2011 www.aosmd.com Page 3 of 5
AON2240
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
2
4
6
8
10
02468
VGS (Volts)
Qg(nC)
Figure 7: Gate-Charge Characteristics
0
100
200
300
400
500
600
0 10 20 30 40
Capacitance (pF)
VDS (Volts)
Figure 8: Capacitance Characteristics
Ciss
Coss
Crss
VDS=20V
ID=8A
10
µ
s
0.0
0.1
1.0
10.0
100.0
0.01 0.1 1 10 100
ID(Amps)
VDS (Volts)
Figure 9: Maximum Forward Biased Safe
10
µ
s
10ms
1ms
DC
RDS(ON)
limited
TJ(Max)=150°C
TC=25°C
100µs
1
10
100
1000
10000
0.00001 0.001 0.1 10 1000
Power (W)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction
-
to
-
TA=25°C
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
Figure 10: Single Pulse Power Rating Junction
-
to
-
Ambient (Note H)
0.001
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
ZθJA Normalized Transient
Thermal Resistance
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note H)
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Single Pulse
RθJA=80°C/W
Rev 0: Dec 2011 www.aosmd.com Page 4 of 5
AON2240
-
+
VDC
Ig
Vds
DUT
-
+
VDC
Vgs
Vgs
10V
Qg
Qgs Qgd
Charge
Gate Charge Test Circuit & Waveform
D iod e R ecovery T est C ircuit & W av eform s
Vds +
Q = - Idt
-
+
V D C
D U T Vdd
Vgs
V ds
Vgs
R L
R g
V gs
V d s
10 %
90 %
R e sis tiv e S w itching T est C ircuit & W a vefo rm s
t t
r
d(on)
t
on
t
d(o ff)
t
f
t
off
Ig
Vgs
-
+
V D C
DUT
L
V g s
Vds
Isd
Isd
V ds -
Vds +
I
F
dI/dt
I
R M
rr
Vdd
Vdd
Q = - Idt
t
rr
Rev 0: Dec 2011 www.aosmd.com Page 5 of 5
