AON2240 40V N-Channel MOSFET General Description Product Summary The AON2240 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications. ID (at VGS=10V) 40V 8A RDS(ON) (at VGS =10V) < 21m RDS(ON) (at VGS =4.5V) < 29m VDS DFN 2x2B Top View S D Bottom View D D D S Pin 1 D G Pin 1 D G S Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TA=25C Continuous Drain Current G Pulsed Drain Current C Power Dissipation Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Rev 0 : Dec 2011 Steady-State A 2.8 W 1.8 TJ, TSTG Symbol t 10s V 32 PD TA=70C 20 6 IDM TA=25C A Units V 8 ID TA=100C Maximum 40 RJA www.aosmd.com -55 to 150 Typ 37 66 C Max 45 80 Units C/W C/W Page 1 of 5 AON2240 Electrical Characteristics (TJ=25C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250A, VGS=0V IGSS Gate-Body leakage current VDS=0V, VGS=20V VGS(th) Gate Threshold Voltage VDS=VGSID=250A 1.4 ID(ON) On state drain current VGS=10V, VDS=5V 32 TJ=55C TJ=125C VGS=4.5V, ID=4A 100 nA 1.9 2.4 V 16.8 21 24.5 31 22.6 29 m 1 V 3.5 A A gFS Forward Transconductance VDS=5V, ID=8A 33 VSD Diode Forward Voltage IS=1A,VGS=0V 0.75 IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Input Capacitance Ciss Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=20V, f=1MHz Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime VGS=10V, VDS=20V, ID=8A VGS=10V, VDS=20V, RL=2.5, RGEN=3 1 m S 415 pF 112 pF 11 VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) A 5 VGS=10V, ID=8A Units V 1 Zero Gate Voltage Drain Current Static Drain-Source On-Resistance Max 40 VDS=40V, VGS=0V IDSS RDS(ON) Typ pF 2.2 3.5 6.5 12 nC 3 6 nC 1.2 nC 1.1 nC 4 ns 3 ns 15 ns tf Turn-Off Fall Time 2 ns trr Body Diode Reverse Recovery Time IF=8A, dI/dt=100A/s 12.5 Qrr Body Diode Reverse Recovery Charge IF=8A, dI/dt=100A/s 3.5 ns nC A. The value of RJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The Power dissipation PDSM is based on R JA t 10s value and the maximum allowed junction temperature of 150C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150C. Ratings are based on low frequency and duty cycles to keep initial TJ =25C. D. The RJA is the sum of the thermal impedance from junction to case RJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 0 : Dec. 2011 www.aosmd.com Page 2 of 5 AON2240 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 20 10V 4.5V VDS=5V 25 15 3.5V ID(A) ID (A) 20 15 10 3V 10 125C 5 25C 5 VGS=2.5V 0 0 0 1 2 3 4 0 5 2 3 4 5 6 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) 50 Normalized On-Resistance 1.8 40 RDS(ON) (m) 1 30 VGS=4.5V 20 VGS=10V 10 1.6 VGS=10V ID=8A 1.4 1.2 VGS=4.5V ID=4A 1 0.8 0 0 4 8 0 12 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature (Note E) ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 1.0E+02 60 ID=8A 1.0E+01 IS (A) 50 RDS(ON) (m) 40 125C 1.0E+00 1.0E-01 30 125C 25C 1.0E-02 20 1.0E-03 10 25C 1.0E-04 0 2 4 6 8 10 1.0E-05 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev 0: Dec 2011 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 5 AON2240 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 600 VDS=20V ID=8A 500 Ciss Capacitance (pF) VGS (Volts) 8 6 4 400 300 200 Coss 2 100 0 Crss 0 0 2 4 6 8 0 Qg (nC) Figure 7: Gate-Charge Characteristics 20 30 40 VDS (Volts) Figure 8: Capacitance Characteristics 10000 100.0 RDS(ON) limited 1000 100s 1.0 1ms TJ(Max)=150C TC=25C 10ms Power (W) 10.0 TA=25C 10s 10s ID (Amps) 10 100 10 0.1 DC 0.0 0.01 0.1 1 10 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 100 1 0.00001 0.001 0.1 10 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note H) ZJA Normalized Transient Thermal Resistance 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TA+PDM.ZJA.RJA 1 RJA=80C/W 0.1 Single Pulse 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note H) Rev 0: Dec 2011 www.aosmd.com Page 4 of 5 AON2240 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge R es istiv e S w itch ing T e st C ircu it & W a ve fo rm s RL V ds Vds DUT Vgs + VDC 90 % Vdd - Rg 1 0% Vgs V gs t d (o n ) tr t d (o ff) to n tf t o ff D iode R ecovery T est C ircuit & W aveform s Q rr = - V ds + DUT V ds - Isd V gs Ig Rev 0: Dec 2011 Idt V gs L Isd + VD C - IF t rr dI/dt I RM V dd V dd V ds www.aosmd.com Page 5 of 5