RPI-124B - ROHM SEMICONDUCTOR

TC74LCX08F/FK

2018-08-02

Toshiba Electronic Devices & Storage Corporation

TOS HIBA CMO S Dig ital Inte grate d Circuit Silicon M o n olithic

TC74LCX08F, TC74LCX08FK

Low-Voltage Quad 2-Input AND Gate with 5-V Tolerant Inputs and Outputs

The TC74LCX08 is a high-performance CMOS 2-input AND gate.

Designed for use in 3.3-V systems, it achieves high-speed operation

while maintaining the CMOS low power dissipation.

The device is designed for low-voltage (3.3 V) VCC applications, but it

could be used to interface to 5-V supply environment for inputs.

All inputs are equipped with protection circuits against static

discharge.

Features

• Low-voltage operation: VCC = 2.0 to 3.6 V

• High-speed operation: tpd = 5.5 ns (max) (VCC = 3.0 to 3.6 V)

• Output current: |IOH|/IOL = 24 mA (min) (VCC = 3.0 V)

• Latch-up performance: −500 mA

• Available in JEITA S O P, VSSOP (US)

• Power-down protection provided on all inputs and outputs

• Pin and function compatible with the 74 series

(74AC/VHC/HC/F/ALS/LS etc.) 08 type

TC74LCX08F

TC74LCX08FK

Weight

SOP14

-P-300-1.27A : 0.18 g ( typ.)

VSSOP14-P-0030-0.50 : 0.02 g ( typ.)

Start of commercial production

1994-10

TC74LCX08F/FK

2018-08-02

Toshiba Electronic Devices & Storage Corporation

Pin Assignment (top view) IEC Logic Symbol

Truth Table

Inputs Outputs

A B Y

L L L

L H L

H L L

H H H

Absolute Maximum Ratings (No te 1)

Characteristics Symbol Rating Unit

Power supply voltage VCC

−0.5 to 7.0 V

DC input voltage VIN −0.5 to 7.0 V

DC output voltage VOUT −0.5 to 7.0 (Not e 2) V

−0.5 to VCC + 0.5

(Note 3)

Input diode current IIK

−50 mA

Output diode current IOK ±50 (Note 4) mA

DC output current IOUT ±50 mA

Power dissipation PD 180 mW

DC VCC/ground current ICC/IGND

±100 mA

Storage temperature Tstg −65 to 150 °C

Note 1: Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or even

destruction.

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant

change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating

conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the

operating ranges.

Please d esign the appr o priate reliability upo n r ev iew ing t he Toshiba Semicon du ctor Re liabili ty H andboo k (“H a ndl ing

Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated

failure rate, etc).

Note 2: VCC = 0 V

Note 3: High or low state. IOUT absolute maximum rating must be observed.

Note 4: VOUT < GND, VOUT > VCC

VCC

GND

TC74LCX08F/FK

2018-08-02

Toshiba Electronic Devices & Storage Corporation

Operating Ranges (Note 1)

Characteristics Symbol Rating Unit

Power Supply voltage VCC 2.0 to 3.6 V

1.5 to 3.6 (Note 2)

Input volt age VIN 0 to 5.5 V

Output voltage VOUT 0 to 5.5 (Note 3)

0 to VCC (Note 4)

Output current IOH/IOL ±24 (Note 5) mA

±12 (Note 6)

Operating temperature Topr −40 to 85 °C

Input rise and fall time dt/dv 0 to 10 (Note 7) ns/V

Note 1: The operating ranges must be maintain ed to ensure the normal operation of the device.

Unused inputs must be tied to either VCC or GND.

Note 2: Data retention only

Note 3: VCC = 0 V

Note 4: High or low state

Note 5: VCC = 3.0 to 3.6 V

Note 6: VCC = 2.7 to 3.0 V

Note 7: VIN = 0.8 to 2.0 V, VCC = 3.0 V

Electrical Characteristics

DC Characteristics (Ta = −40 to 85°C)

Characteristics Symbol Test Condition Min Max Unit

VCC (V)

Input volt age H-level VIH  2.7 to 3.6 2.0  V

L-level VIL  2.7 to 3.6  0.8

Output voltage

H-level VOH VIN = VIH

IOH = −100 µA 2.7 to 3.6 VCC

− 0.2 

IOH = −12 mA 2.7 2.2 

IOH = −18 mA 3.0 2.4 

IOH = −24 mA 3.0 2.2 

L-level VOL VIN = VIH or VIL

IOL = 100 µA 2.7 to 3.6  0.2

IOL = 12 mA 2.7  0.4

IOL = 16 mA 3.0  0.4

IOL = 24 mA 3.0  0.55

Input leakage current IIN VIN = 0 to 5.5 V 2.7 to 3.6  ±5.0 µA

Power-off leakage current IOFF VIN/VOUT = 5.5 V 0  10.0 µA

Quiescent supply current ICC VIN = VCC or GND 2.7 to 3.6  10.0

µA

VIN = 3.6 to 5.5 V 2.7 to 3.6  ±10.0

Increase in ICC per input ∆ICC VIH = VCC − 0.6 V (per 1 input) 2.7 to 3.6  500

TC74LCX08F/FK

2018-08-02

Toshiba Electronic Devices & Storage Corporation

AC Characteristics (Ta = −40 to 85°C)

Characteristics Symbol Test Condition Min Max Unit

VCC (V)

Propagation delay time tpLH

tpHL Figure 1, Figure 2 2.7  6.2 ns

3.3 ± 0.3 1.5 5.5

Output to output skew tosLH

tosHL (Note)

2.7   ns

3.3 ± 0.3  1.0

Note: Parameter guaranteed by design.

(tosLH = |tpLHm − tpLHn|, tosHL = |tpHLm − tpHLn|)

Dynamic Switching Characteristics (Ta = 25°C, input: tr = tf = 2.5 ns, CL = 50 pF, RL = 500 Ω)

Characteristics Symbol Test Condition Typ. Unit

VCC (V)

Quiet output maximum dynamic VOL VOLP VIH = 3.3 V, VIL = 0 V 3.3 0.8 V

Quiet output minimum dynamic VOL |VOLV| VIH = 3.3 V, VIL = 0 V 3.3 0.8 V

Capacitive Characteristics (Ta = 25°C)

Characteristics Symbol Test Condition Typ. Unit

VCC (V)

Input capacitance CIN  3.3 7 pF

Output capacitance COUT  0 8 pF

Power dissipation capacitance CPD fIN = 10 MHz (Note)

3.3 25 pF

Note: CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current

consumptio n w ithout loa d.

Average operating current can be obtained by the equation:

ICC (opr) = CPD･VCC･fIN + ICC/4 (per gate)

TC74LCX08F/FK

2018-08-02

Toshiba Electronic Devices & Storage Corporation

AC Test Circuit

AC Waveform

Output

Measure

L = 50 pF

L = 500 Ω

Figure 1

90%

10%

Output

Input

VOL

VOH

GND

2.7 V

1.5 V

tpLH

tpHL

tr 2.5 ns

tf 2.5 ns

1.5 V

Figure 2 tpLH, tpHL

TC74LCX08F/FK

2018-08-02

Toshiba Electronic Devices & Storage Corporation

Package Dimensions

Weight: 0.18 g (typ.)

TC74LCX08F/FK

2018-08-02

Toshiba Electronic Devices & Storage Corporation

Package Dimensions

Weight : 0.02 g (typ.)

TC74LCX08F/FK

2018-08-02

Toshiba Electronic Devices & Storage Corporation

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