Advanced Power P-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET
▼ Simple Drive Requirement BVDSS -20V
▼ Small Package Outline RDS(ON) 90mΩ
▼ Surface Mount Device ID- 3A
▼ RoHS Compliant & Halogen-Free
Description
Absolute Maximum Ratings
Symbol Units
VDS V
VGS V
ID@TA=25℃A
ID@TA=70℃A
IDM A
PD@TA=25℃W
TSTG ℃
TJ℃
Symbol Value Unit
Rthj-a Maximum Thermal Resistance, Junction-ambient3100 ℃/W
Data and specifications subject to change without notice
-55 to 150
1.25
-55 to 150
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3, VGS @ 4.5V
Thermal Data Parameter
Total Power Dissipation
Operating Junction Temperature Range
Storage Temperature Range
Continuous Drain Current3, VGS @ 4.5V -2.4
Pulsed Drain Current1-12
201112071
1
AP2325GEN-HF
Rating
- 20
+12
-3
Halogen-Free Product
Advanced Power MOSFETs from APEC provide the designer with the best
combination of fast switching,low on-resistance and cost-effectiveness.
The SOT-23 package is widely preferred for commercial-industrial surface
mount applications and suited for low voltage applications such as DC/DC
converters.
D
G
S
SOT-23
G
D
S
AP2325GEN-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=-250uA -20 - - V
RDS(ON) Static Drain-Source On-Resistance2VGS=-4.5V, ID=-3A - 70 90 mΩ
VGS=-2.5V, ID=-2A - 95 130 mΩ
VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250uA -0.3 -0.7 -1 V
gfs Forward Transconductance VDS=-5V, ID=-3A - 8 - S
IDSS Drain-Source Leakage Current VDS=-16V, VGS=0V - - -10 uA
IGSS Gate-Source Leakage VGS=+12V, VDS=0V - - +30 uA
QgTotal Gate Charge ID=-3A - 6 9.6 nC
Qgs Gate-Source Charge VDS=-10V - 1 - nC
Qgd Gate-Drain ("Miller") Charge VGS=-4.5V - 1.7 - nC
td(on) Turn-on Delay Time VDS=-10V - 7 - ns
trRise Time ID=-1A - 16 - ns
td(off) Turn-off Delay Time RG=3.3Ω-21-ns
tfFall Time VGS=-5V - 5 - ns
Ciss Input Capacitance VGS=0V - 520 830 pF
Coss Output Capacitance VDS=-10V - 70 pF
Crss Reverse Transfer Capacitance f=1.0MHz - 55 - pF
Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
VSD Forward On Voltage2IS=-1.2A, VGS=0V - - -1.2 V
trr Reverse Recovery Time IS=-3A, VGS=0V, - 15 - ns
Qrr Reverse Recovery Charge dI/dt=100A/µs - 7 - nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board ; 270℃/W when mounted on min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
A
P2325GEN-HF
65mΩ
Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2.01E+08
Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s.
Reverse Diode Junction Temperature
3
0
0.4
0.8
1.2
1.6
2
-50 0 50 100 150
Tj , Junction Temperature ( oC)
Normalized RDS(ON)
I
D= -3A
VGS = -4.5V
0
2
4
6
8
10
12
012345
-VDS , Drain-to-Source Voltage (V)
-ID , Drain Current (A)
TA=25 oC-5.0V
-4.5V
-3.5V
-2.5V
VG= -2.0V
0
2
4
6
8
10
12
012345
-VDS , Drain-to-Source Voltage (V)
-ID , Drain Current (A)
-5.0V
-4.5V
-3.5V
-2.5V
VG= -2.0V
TA= 150 oC
0
1
2
3
4
0 0.2 0.4 0.6 0.8 1 1.2 1.4
-VSD , Source-to-Drain Voltage (V)
-IS(A)
Tj=25 oCTj=150 oC
0
0.4
0.8
1.2
1.6
2
-50 0 50 100 150
Tj, Junction Temperature ( oC)
Normalized -VGS(th) (V)
ID= -250uA
50
70
90
110
130
150
123456
-VGS , Gate-to-Source Voltage (V)
RDS(ON) (m
Ω
)
I
D= -2A
TA=25 oC
AP2325GEN-HF
65mΩ
Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area Fi
g
10. Effective Transient Thermal Im
p
edance
Fig 11. Maximum Continuous Drain Fig 12. Gate Charge Waveform
Current v.s. Ambient Temperature
4
0
2
4
6
8
0246810
QG , Total Gate Charge (nC)
-VGS , Gate to Source Voltage (V)
I
D= -3A
VDS = -10V
0.01
0.1
1
10
100
0.01 0.1 1 10 100
-VDS , Drain-to-Source Voltage (V)
-ID (A)
TA=25oC
Single Pulse
100us
1ms
10ms
100ms
1s
DC
0.001
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10 100 1000
t , Pulse Width (s)
Normalized Th e rmal Re sponse (Rthja)
0.01
0.05
0.1
0.2
DUTY=0.5
Single Pulse
PDM
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
tT
Rthja = 270℃/W
0
200
400
600
800
1 5 9 13172125
-VDS , Drain-to-Source Voltage (V)
C (pF)
f
=1.0MHz
Ciss
Coss
Crss
0.02
0
1
2
3
4
25 50 75 100 125 150
TA , Ambient Temperature ( oC )
-ID , Drain Current (A)
Operation in this area
limited by RDS(ON)
Q
VG
-4.5V
QGS QGD
QG
Charge
