Advanced Power N-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET
▼ Simple Drive Requirement BVDSS 25V
▼ Small package outline RDS(ON) 117mΩ
▼ Surface mount package ID2.7A
▼ RoHS Compliant & Halogen-Free
Description
Absolute Maximum Ratings
Symbol Units
VDS V
VGS V
ID@TA=25℃A
ID@TA=70℃A
IDM A
PD@TA=25℃W
W/℃
TSTG ℃
TJ℃
Symbol Value Unit
Rthj-a Maximum Thermal Resistance, Junction-ambient390 ℃/W
Data and specifications subject to change without notice
AP2304GN-HF
Halogen-Free Product
Parameter Rating
Drain-Source Voltage 25
Gate-Source Voltage +20
Continuous Drain Current3, VGS @ 10V 2.7
Continuous Drain Current3, VGS @ 10V 2.2
Pulsed Drain Current110
Operating Junction Temperature Range -55 to 150
Linear Derating Factor 0.01
Storage Temperature Range
Total Power Dissipation 1.38
-55 to 150
200908315
Thermal Data
Parameter
1
G
D
S
D
G
S
SOT-23
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
low on-resistance and cost-effectiveness.
AP2304GN-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 25 - - V
RDS(ON) Static Drain-Source On-Resistance2VGS=10V, ID=2.5A - - 117 mΩ
VGS=4.5V, ID=2A - - 190 mΩ
VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1 - 3 V
gfs Forward Transconductance VDS=4.5V, ID=2.5A - 3.4 - S
IDSS Drain-Source Leakage Current VDS=25V, VGS=0V - - 1 uA
Drain-Source Leakage Current (Tj=55oC) VDS=20V ,VGS=0V - - 10 uA
IGSS Gate-Source Leakage VGS=+20V, VDS=0V - - +100 nA
QgTotal Gate Charge2ID=2.5A - 5.9 10 nC
Qgs Gate-Source Charge VDS=15V - 0.8 - nC
Qgd Gate-Drain ("Miller") Charge VGS=10V - 2.1 - nC
td(on) Turn-on Delay Time2VDS=15V - 4.5 - ns
trRise Time ID=1A - 11.5 - ns
td(off) Turn-off Delay Time RG=6Ω,VGS=10V - 12 - ns
tfFall Time RD=15Ω-3-
ns
Ciss Input Capacitance VGS=0V - 110 - pF
Coss Output Capacitance VDS=15V - 85 - pF
Crss Reverse Transfer Capacitance f=1.0MHz - 39 - pF
Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
ISContinuous Source Current ( Body Diode ) VD=VG=0V , VS=1.2V - - 1 A
ISM Pulsed Source Current ( Body Diode )1--10
A
VSD Forward On Voltage2IS=1.25A, VGS=0V - - 1.2 V
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board ; 270℃/W when mounted on min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP2304GN-HF
Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s.
Reverse Diode Junction Temperature
3
0
2
4
6
8
10
0246810
VDS , Drain-to-Source Voltage (V)
ID , Drain Current (A)
TA=25 oC
VGS =3V
VGS =10V - 5V
VGS =4V
0
2
4
6
8
10
0246810
VDS , Drain-to-Source Voltage (V)
ID , Drain Current (A)
TA=150 oC
VGS =4V
VGS =10V - 5V
VGS =3V
0
100
200
300
400
500
600
700
0246810
VGS , Gate-to-Source Voltage (V)
RDS(ON) (m
Ω
)
I
D=2A
TA=25 ℃
0.6
0.8
1.0
1.2
1.4
1.6
1.8
-50 0 50 100 150
Tj , Junction Temperature ( oC)
Normalized RDS(ON)
VGS =10V
I
D=2.5A
0
1
10
0.1 0.5 0.9 1.3
VSD , Source-to-Drain Voltage (V)
IF (A)
Tj=25 oCTj=150 oC
1.45
1.65
1.85
2.05
2.25
-50 0 50 100 150
Tj , Junction Temperature ( oC)
VGS(th) (V)
AP2304GN-HF
Fig7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area Fig10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform
4
0
0
1
10
100
0.1 1 10 100
VDS , Drain-to-Source Voltage (V)
ID (A)
TA=25oC
Single Pulse 1s
1ms
10ms
100ms
DC 0.001
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10 100 1000
t , Pulse Width (s)
Normalized Th e rmal Re sponse (Rthja)
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
PDM
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja = 270℃/W
tT
0
2
4
6
8
10
0123456
QG , Total Gate Charge (nC)
VGS , Gate to Sourc e Voltage ( V)
VDS =15V
ID=2.5A
10
100
1000
1 5 9 1317212529
VDS , Drain-to-Source Voltage (V)
C (pF)
f
=1.0MH
z
Ciss
Coss
Crss
td(on) trtd(off) tf
VDS
VGS
10%
90%
Q
VG
10V
QGS QGD
QG
Charge
