Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM800HA-24B
HIGH POWER SWITCHING USE
INSULATED TYPE
QM800HA-24B
OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm
APPLICATION
AC motor controllers, UPS, CVCF, DC motor controllers, NC equipment, Welders
145
9
19 28
27
3728
8–φ6.5
74
3973
74
6565
27
9
163
51 47 25
B
E
BX
C
E
16 316 334 334
3–M4 2–M8
45
50MAX.
47MAX.
44.5
42
8
B
BX
E
E
C
LABEL
ICCollector current ........................ 800A
VCEX Collector-emitter voltage ......... 1200V
hFE DC current gain............................. 750
Insulated Type
UL Recognized
Yellow Card No. E80276 (N)
File No. E80271
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM800HA-24B
HIGH POWER SWITCHING USE
INSULATED TYPE
ABSOLUTE MAXIMUM RATINGS (Tj=25°C, unless otherwise noted)
Symbol
VCEX (SUS)
VCEX
VCBO
VEBO
IC
–IC
PC
IB
–ICSM
Tj
Tstg
Viso
Parameter
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Collector reverse current
Collector dissipation
Base current
Surge collector reverse current
(forward diode current)
Junction temperature
Storage temperature
Isolation voltage
Mounting torque
Weight
Conditions
IC=1A, VEB=2V
VEB=2V
Emitter open
Collector open
DC
DC (forward diode current)
TC=25°C
DC
Peak value of one cycle of 60Hz (half wave)
Charged part to case, AC for 1 minute
Main terminal screw M8
Mounting screw M6
B(E) terminal screw M4
BX terminal screw M4
Typical value
Ratings
1200
1200
1200
7
800
800
5300
40
8000
–40~+150
–40~+125
2500
8.83~10.8
90~110
1.96~2.94
20~30
0.98~1.47
12~18
0.98~1.47
12~18
2100
Unit
V
V
V
V
A
A
W
A
A
°C
°C
V
N·m
kg·cm
N·m
kg·cm
N·m
kg·cm
N·m
kg·cm
g
ELECTRICAL CHARACTERISTICS (Tj=25°C, unless otherwise noted)
Unit
mA
mA
mA
V
V
V
µs
µs
µs
°C/W
°C/W
°C/W
Limits
Min.
750
Symbol
ICEX
ICBO
IEBO
VCE (sat)
VBE (sat)
–VCEO
hFE
ton
ts
tf
Rth (j-c) Q
Rth (j-c) R
Rth (c-f)
Parameter
Collector cutoff current
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector-emitter reverse voltage
DC current gain
Switching time
Thermal resistance
(junction to case)
Contact thermal resistance
(case to fin)
Test conditions
VCE=1200V, VEB=2V
VCB=1200V,Emitter open
VEB=7V, Collector open
IC=800A, IB=1.06A
IC=–800A (diode forward voltage)
IC=800A, VCE=4.0V
VCC=600V, IC=800A, IB1=1.6A, –IB2=16A
Transistor part
Diode part
Conductive grease applied
Typ.
Max.
8.0
8.0
600
4.0
4.2
1.8
2.5
20
5.0
0.023
0.12
0.01
Feb.1999
7
5
4
3
2
7
5
4
3
2
2.6 3.0 3.4 3.8
V
CE
=4V
T
j
=25°C
4.2 4.6
–1
10
0
10
1
10
–2
10
753275327532
5
4
3
2
1
0
T
j
=25°C
T
j
=125°C
0
10
–1
10
1
10
I
C
=600A
I
C
=1000A
I
C
=800A
23457
7
5
4
3
2
7
5
4
3
2
23457
T
j
=25°C
T
j
=125°C
4
10
3
10
2
10
1
10
2
10
3
10
V
CE
=4.0V
7
5
4
3
2
7
5
4
3
2
23457 23457
T
j
=25°C
T
j
=125°C
–1
10
I
B
=1.06A
V
BE(sat)
V
CE(sat)
1
10
0
10
1
10
2
10
3
10
7
5
4
3
2
7
5
4
3
2
0 0.4 0.8 1.2 1.6 2.0
T
j
=25°C
T
j
=125°C
1
10
2
10
3
10
1000
800
600
400
200
0012345
T
j
=25°C
I
B
=250mA
I
B
=1.06A
I
B
=4A
I
B
=0.5A
PERFORMANCE CURVES
COMMON EMITTER OUTPUT
CHARACTERISTICS (TYPICAL)
COMMON EMITTER INPUT
CHARACTERISTIC (TYPICAL)
SATURATION VOLTAGE
CHARACTERISTICS (TYPICAL)
COLLECTOR-EMITTER SATURATION
VOLTAGE (TYPICAL)
DC CURRENT GAIN VS.
COLLECTOR CURRENT (TYPICAL)
COLLECTOR CURRENT IC (A)
DC CURRENT GAIN hFE
COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A)
BASE CURRENT IB (A)
COLLECTOR-EMITTER SATURATION
VOLTAGE VCE (sat) (V)
SATURATION VOLTAGE VCE (sat), VBE (sat) (V)
COLLECTOR CURRENT IC (A)BASE-EMITTER VOLTAGE VBE (V)
BASE CURRENT IB (A)
MITSUBISHI TRANSISTOR MODULES
QM800HA-24B
HIGH POWER SWITCHING USE
INSULATED TYPE
REVERSE COLLECTOR CURRENT VS.
COLLECTOR-EMITTER REVERSE
VOLTAGE (DIODE FORWARD
CHARACTERISTICS) (TYPICAL)
COLLECTOR-EMITTER REVERSE VOLTAGE
–VCEO (V)
COLLECTOR REVERSE CURRENT –IC (A)
Feb.1999
1600
00
400
800
1200
400 800 1200 1600
T
j
=125°C
I
B
=–16A
MITSUBISHI TRANSISTOR MODULES
QM800HA-24B
HIGH POWER SWITCHING USE
INSULATED TYPE
REVERSE BIAS SAFE OPERATING AREA
COLLECTOR-EMITTER VOLTAGE VCE (V)
COLLECTOR CURRENT IC (A)