DATA SHEET NPN SILICON RF TRANSISTOR NE664M04 / 2SC5754 UT NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (0.4 W) FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) FEATURES * Ideal for 460 MHz to 2.4 GHz medium output power amplification * PO (1 dB) = 26.0 dBm TYP. @ VCE = 3.6 V, f = 1.8 GHz, Pin = 15 dBm * High collector efficiency: C = 60% * UHS0-HV technology (fT = 25 GHz) adopted O * High reliability through use of gold electrodes * Flat-lead 4-pin thin-type super minimold (M04) package ORDERING INFORMATION Quantity Supplying Form AS E- Part Number NE664M04-A 2SC5754-A 50 pcs (Non reel) NE664M04-T2-A 2SC5754-T2-A 3 kpcs/reel * 8 mm wide embossed taping * Pin 1 (Emitter), Pin 2 (Collector) face the perforation side of the tape Remark To order evaluation samples, contact your nearby sales office. PH The unit sample quantity is 50 pcs. Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Document No. PU10008EJ02V0DS (2nd edition) Date Published March 2003 CP(K) JEITA Part No. The mark * shows major revised points. NE664M04 / 2SC5754 ABSOLUTE MAXIMUM RATINGS (TA = +25C) Symbol Ratings Unit Collector to Base Voltage VCBO 13 V Collector to Emitter Voltage VCEO 5.0 V Emitter to Base Voltage VEBO 1.5 V IC 500 mA Ptot 735 Collector Current Total Power Dissipation Note Junction Temperature Tj 150 Storage Temperature Tstg -65 to +150 THERMAL RESISTANCE Parameter C C Test Conditions Ratings Unit Rth j-a1 Mounted on 38 x 38 mm, t = 0.4 mm polyimide PCB 170 C/W Rth j-a2 Stand alone device in free air 570 C/W PH AS E- Junction to Ambient Resistance Symbol mW O Note Mounted on 38 x 38 mm, t = 0.4 mm polyimide PCB UT Parameter 2 Data Sheet PU10008EJ02V0DS NE664M04 / 2SC5754 ELECTRICAL CHARACTERISTICS (TA = +25C) Parameter Symbol Test Conditions MIN. TYP. MAX. Unit DC Characteristics ICBO VCB = 5 V, IE = 0 mA - - 1 000 nA Emitter Cut-off Current IEBO VBE = 1 V, IC = 0 mA - - 1 000 nA VCE = 3 V, IC = 100 mA 40 60 100 - VCE = 3 V, IC = 100 mA, f = 0.5 GHz 16 20 - GHz 5.0 6.5 - dB hFE DC Current Gain Note 1 RF Characteristics Gain Bandwidth Product fT UT Collector Cut-off Current S21e VCE = 3 V, IC = 100 mA, f = 2 GHz Reverse Transfer Capacitance Cre VCB = 3 V, IE = 0 mA, f = 1 MHz - 1.0 1.5 pF VCE = 3 V, IC = 100 mA, f = 2 GHz - 12.0 - dB GL VCE = 3.6 V, ICq = 20 mA, f = 1.8 GHz, Pin = 0 dBm, 1/2 Duty - 12.0 - dB PO (1 dB) VCE = 3.6 V, ICq = 4 mA, f = 1.8 GHz, Pin = 15 dBm, 1/2 Duty - 26.0 - dBm C VCE = 3.6 V, ICq = 4 mA, f = 1.8 GHz, Pin = 15 dBm, 1/2 Duty - 60 - % Maximum Available Power Gain Linear Gain Gain 1 dB Compression Output Power Collector Efficiency Note 2 MAG Note 3 O Insertion Power Gain 2 AS E- Notes 1. Pulse measurement: PW 350 s, Duty Cycle 2% 2. Collector to base capacitance when the emitter grounded 3. MAG = S21 (K - (K2 - 1) ) S12 hFE CLASSIFICATION FB Marking R57 hFE Value 40 to 100 PH Rank Data Sheet PU10008EJ02V0DS 3 NE664M04 / 2SC5754 TYPICAL CHARACTERISTICS (Unless otherwise specified, TA = +25C) Mounted on Polyimide PCB 800 (38 x 38 mm, t = 0.4 mm) 735 600 400 Stand alone device in free air 205 200 0 25 50 75 100 125 150 1.0 0.5 0 2 450 VCE = 3 V 400 100 Collector Current IC (mA) 10 1 0.1 0.01 4 0.6 0.7 0.8 0.9 350 300 250 6 mA 5 mA 4 mA 200 3 mA 150 2 mA 100 1.0 0 1 mA PH VCE = 3 V 100 10 100 1 2 3 4 IB = 0.5 mA 5 6 Collector to Emitter Voltage VCE (V) DC CURRENT GAIN vs. COLLECTOR CURRENT 1 5 IB : 0.5 mA step 7 mA 50 1 000 10 3 COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE Base to Emitter Voltage VBE (V) DC Current Gain hFE 1 AS E- Collector Current IC (mA) 1.5 O COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE 0.001 0.5 1 000 Collector Current IC (mA) 4 f = 1 MHz Collector to Base Voltage VCB (V) Ambient Temperature TA (C) 1 000 2.0 UT Reverse Transfer Capacitance Cre (pF) 1 000 Total Power Dissipation Ptot (mW) REVERSE TRANSFER CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE Data Sheet PU10008EJ02V0DS NE664M04 / 2SC5754 10 5 0 1 10 100 1 000 MAG 15 |S21e|2 10 5 0 1 10 100 VCE = 3 V IC = 100 mA MSG MAG 25 20 15 10 5 |S21e|2 0 0.1 1 10 INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT O MSG 30 20 VCE = 3 V f = 2 GHz 15 MSG AS E- Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT VCE = 3 V f = 1 GHz 35 Frequency f (GHz) Collector Current IC (mA) 20 INSERTION POWER GAIN, MAG, MSG vs. FREQUENCY UT 15 Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) 20 VCE = 3 V f = 0.5 GHz Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) Gain Bandwidth Product fT (GHz) 25 GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT 1 000 Collector Current IC (mA) MAG 10 |S21e|2 5 0 1 10 100 1 000 Collector Current IC (mA) 20 VCE = 3 V f = 2.5 GHz 15 PH Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT MSG 10 MAG 5 0 1 10 |S21e|2 100 1 000 Collector Current IC (mA) Data Sheet PU10008EJ02V0DS 5 100 5 50 0 -15 C -10 -5 0 5 0 15 10 30 25 20 15 10 5 300 VCE = 3.2 V, f = 1.8 GHz ICq = 4 mA, 1/2 Duty 250 Pout 200 IC GP 150 100 50 C 0 -10 -5 0 5 10 0 20 15 OUTPUT POWER, POWER GAIN, COLLECTOR CURRENT, COLLECTOR EFFICIENCY vs. INPUT POWER 25 300 VCE = 3.6 V, f = 1.8 GHz ICq = 4 mA, 1/2 Duty PH Output Power Pout (dBm), Power Gain GP (dB) Input Power Pin (dBm) 30 200 IC 15 250 Pout 20 200 IC 15 10 GP 0 -10 50 C -5 0 5 10 Input Power Pin (dBm) 150 100 5 15 0 20 GP 10 100 5 50 C 0 -5 0 5 10 15 0 25 20 Input Power Pin (dBm) OUTPUT POWER, POWER GAIN, COLLECTOR CURRENT, COLLECTOR EFFICIENCY vs. INPUT POWER 30 25 300 VCE = 3.2 V, f = 1.8 GHz ICq = 20 mA, 1/2 Duty 15 250 Pout 20 200 IC GP 50 5 0 -10 -5 0 150 100 10 C 5 10 0 20 15 Input Power Pin (dBm) OUTPUT POWER, POWER GAIN, COLLECTOR CURRENT, COLLECTOR EFFICIENCY vs. INPUT POWER 30 25 300 VCE = 3.6 V, f = 1.8 GHz ICq = 20 mA, 1/2 Duty 20 15 250 Pout 200 IC GP 50 5 0 -10 Data Sheet PU10008EJ02V0DS 150 100 10 Remark The graphs indicate nominal characteristics. 6 150 O OUTPUT POWER, POWER GAIN, COLLECTOR CURRENT, COLLECTOR EFFICIENCY vs. INPUT POWER 20 AS E- Output Power Pout (dBm), Power Gain GP (dB) Input Power Pin (dBm) 250 Pout Collector Current IC (mA), Collector Efficiency C (%) 10 25 300 VCE = 3.2 V, f = 2.4 GHz ICq = 20 mA, 1/2 Duty C -5 0 5 10 Input Power Pin (dBm) 15 0 20 Collector Current IC (mA), Collector Efficiency C (%) 150 30 Collector Current IC (mA), Collector Efficiency C (%) 15 OUTPUT POWER, POWER GAIN, COLLECTOR CURRENT, COLLECTOR EFFICIENCY vs. INPUT POWER UT 200 GP Output Power Pout (dBm), Power Gain GP (dB) 20 IC Output Power Pout (dBm), Power Gain GP (dB) 250 Pout Output Power Pout (dBm), Power Gain GP (dB) 25 300 VCE = 3.2 V, f = 0.9 GHz ICq = 20 mA, 1/2 Duty Collector Current IC (mA), Collector Efficiency C (%) 30 Collector Current IC (mA), Collector Efficiency C (%) OUTPUT POWER, POWER GAIN, COLLECTOR CURRENT, COLLECTOR EFFICIENCY vs. INPUT POWER Collector Current IC (mA), Collector Efficiency C (%) Output Power Pout (dBm), Power Gain GP (dB) NE664M04 / 2SC5754 NE664M04 / 2SC5754 POWER SUPPLY IMPEDANCE, LOAD IMPEDANCE (Recommended value) Collector to Emitter Voltage VCE (V) Supply Impedance ZS () Load Impedance ZL () 0.9 2.8 to 3.6 8.4 - 5.2 j 15.1 - 4.3 j 1.8 2.8 to 3.6 6.3 - 16.4 j 15.8 - 6.9 j 2.4 2.8 to 3.6 5.9 - 22.1 j 15.2 - 17.9 j ZL ZS RF input line ZS Tr. UT Frequency f (GHz) GND B E E C GND RF output line f = 1.8 GHz AS E- f = 0.9 GHz O ZL ZL ZL ZS ZS PH f = 2.4 GHz ZL ZS Data Sheet PU10008EJ02V0DS 7 NE664M04 / 2SC5754 APPLICATION EXAMPLE (Low-cost PA solution) Bluetooth Power Class 1 f = 2.4 GHz R57 0 dBm 13 dBm NE663M04 2SC5509 22 dBm UT T80 NE664M04 2SC5754 SS Cordless Phone f = 2.4 GHz O R57 20 dBm 26 dBm AS E- NE664M04 2SC5754 DCS1800 (GSM1800) Cellular Phone f = 1.8 GHz R57 R55 5 dBm 16 dBm NE678M04 2SC5753 PH -3 dBm NE664M04 2SC5754 8 1 00 9Z NE5520379A (MOS FET) R57 9 dBm NE680M03 2SC5434 (3-pin TUSMM) 3 25 dBm Cordless Phone f = 0.9 GHz TH A 25 dBm NE664M04 2SC5754 Data Sheet PU10008EJ02V0DS 35 dBm NE664M04 / 2SC5754 EVALUATION CIRCUIT EXAMPLE : 1.8 GHz PA EVALUATION BOARD PCB Pattern and Element Layout VB VC C2 RF in SL4 C3 C1 C5 SL1 UT C4 SL3 SL5 Remarks 1. 38 x 38 mm, t = 0.4 mm, O SL2 RF out C6 r = 4.55 double-sided Tr. (NE664M04 / 2SC5754) copper-clad polyimide board AS E- 2. Back side : GND pattern Equivalent Circuit C2 VB VC SL3 3. Solder plating on pattern 4. : Through holes C4 SL4 SL5 C6 SL1 RF in SL2 C1 Tr. RF out C5 C3 PH Parts List Parts Value Size Classification C1, C6 18 pF Multiplayer ceramic chip capacitor C2 3 300 pF Multiplayer ceramic chip capacitor C3 3 pF Multiplayer ceramic chip capacitor C4 15 pF Multiplayer ceramic chip capacitor C5 1.5 pF Multiplayer ceramic chip capacitor SL1, SL4 w = 0.20 mm Strip line SL2 w = 0.76 mm, l = 2.5 mm Strip line SL3 w = 0.76 mm, l = 5 mm Strip line SL5 w = 0.76 mm, l = 1.5 mm Strip line Data Sheet PU10008EJ02V0DS 9 NE664M04 / 2SC5754 15 100 GP 10 150 50 5 C -5 0 5 10 0 20 15 Input Power Pin (dBm) 30 25 20 15 10 5 300 VCE = 3.6 V, f = 1.8 GHz ICq = 4 mA, 1/2 Duty Pout 20 IC 15 0 -10 250 Pout IC 200 150 GP 100 50 C -5 0 5 10 Input Power Pin (dBm) 15 0 20 100 10 50 5 C 0 -10 -5 0 5 10 0 20 15 Input Power Pin (dBm) OUTPUT POWER, POWER GAIN, COLLECTOR CURRENT, COLLECTOR EFFICIENCY vs. INPUT POWER 30 25 300 VCE = 3.6 V, f = 1.8 GHz ICq = 20 mA, 1/2 Duty 15 250 Pout 20 IC 200 150 GP 10 100 5 50 0 -10 Remark The graphs indicate nominal characteristics. PH S-PARAMETERS 10 200 150 GP AS E- Output Power Pout (dBm), Power Gain GP (dB) OUTPUT POWER, POWER GAIN, COLLECTOR CURRENT, COLLECTOR EFFICIENCY vs. INPUT POWER 250 O 0 -10 25 300 VCE = 3.2 V, f = 1.8 GHz ICq = 20 mA, 1/2 Duty Collector Current IC (mA), Collector Efficiency C (%) IC 200 30 Data Sheet PU10008EJ02V0DS -5 0 C 5 10 Input Power Pin (dBm) 15 0 20 Collector Current IC (mA), Collector Efficiency C (%) Pout 20 OUTPUT POWER, POWER GAIN, COLLECTOR CURRENT, COLLECTOR EFFICIENCY vs. INPUT POWER UT 250 Output Power Pout (dBm), Power Gain GP (dB) 25 300 VCE = 3.2 V, f = 1.8 GHz ICq = 4 mA, 1/2 Duty Output Power Pout (dBm), Power Gain GP (dB) 30 Collector Current IC (mA), Collector Efficiency C (%) Output Power Pout (dBm), Power Gain GP (dB) OUTPUT POWER, POWER GAIN, COLLECTOR CURRENT, COLLECTOR EFFICIENCY vs. INPUT POWER Collector Current IC (mA), Collector Efficiency C (%) EXAMPLE OF CHARACTERISTICS FOR 1.8 GHz PA EVALUATION BOARD NE664M04 / 2SC5754 PACKAGE DIMENSIONS 3 0.65 0.65 1.30 O 0.60 0.65 4 0.11+0.1 -0.05 0.59 0.05 0.30 +0.1 -0.05 0.30+0.1 -0.05 1 AS E- 1.25 R57 2.0 0.1 2 1.25 0.1 0.30+0.1 -0.05 0.40+0.1 -0.05 2.05 0.1 UT FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) (UNIT: mm) PIN CONNECTIONS Emitter Collector Emitter Base PH 1. 2. 3. 4. 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