1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
NPN Silicon
MAXIMUM RATINGS
Rating Symbol BC846 BC847
BC850 BC848
BC849 Unit
Collector–Emitter Voltage VCEO 65 45 30 V
Collector–Base Voltage VCBO 80 50 30 V
Emitter–Base Voltage VEBO 6.0 6.0 5.0 V
Collector Current — Continuous IC100 100 100 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR–5 Board, (1)
TA = 25°C
Derate above 25°C
PD225
1.8 mW
mW/°C
Thermal Resistance, Junction to Ambient R
q
JA 556 °C/W
Total Device Dissipation
Alumina Substrate, (2) TA = 25°C
Derate above 25°C
PD300
2.4 mW
mW/°C
Thermal Resistance, Junction to Ambient R
q
JA 417 °C/W
Junction and Storage Temperature TJ, Tstg –55 to +150 °C
DEVICE MARKING
BC846ALT1 = 1A; BC846BLT1 = 1B; BC847ALT1 = 1E; BC847BLT1 = 1F;
BC847CLT1 = 1G; BC848ALT1 = 1J; BC848BLT1 = 1K; BC848CLT1 = 1L
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage BC846A,B
(IC = 10 mA) BC847A,B,C, BC850A,B,C
BC848A,B,C, BC849A,B,C
V(BR)CEO 65
45
30
—
—
—
—
—
—
V
Collector–Emitter Breakdown Voltage BC846A,B
(IC = 10 µA, VEB = 0) BC847A,B,C, BC850A,B,C
BC848A,B,C, BC849A,B,C
V(BR)CES 80
50
30
—
—
—
—
—
—
V
Collector–Base Breakdown Voltage BC846A,B
(IC = 10
m
A) BC847A,B,C, BC850A,B,C
BC848A,B,C, BC849A,B,C
V(BR)CBO 80
50
30
—
—
—
—
—
—
V
Emitter–Base Breakdown Voltage BC846A,B
(IE = 1.0
m
A) BC847A,B,C
BC848A,B,C, BC849A,B,C, BC850A,B,C
V(BR)EBO 6.0
6.0
5.0
—
—
—
—
—
—
V
Collector Cutoff Current (VCB = 30 V)
(VCB = 30 V, TA = 150°C) ICBO —
——
—15
5.0 nA
µA
1. FR–5 = 1.0 x 0.75 x 0.062 in 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
Thermal Clad is a trademark of the Bergquist Company.
Preferred devices are Motorola recommended choices for future use and best overall value.
Order this document
by BC846ALT1/D
SEMICONDUCTOR TECHNICAL DATA
BC846, BC847 and BC848 are
Motorola Preferred Devices
12
3
CASE 318–08, STYLE 6
SOT–23 (TO–236AB)
Motorola, Inc. 1996
COLLECTOR
3
1
BASE
2
EMITTER
2 Motorola Small–Signal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Typ Max Unit
ON CHARACTERISTICS
DC Current Gain BC846A, BC847A, BC848A
(IC = 10 µA, VCE = 5.0 V) BC846B, BC847B, BC848B
BC847C, BC848C
(IC = 2.0 mA, VCE = 5.0 V) BC846A, BC847A, BC848A, BC849A, BC850A
BC846B, BC847B, BC848B, BC849B, BC850B
BC847C, BC848C, BC849C, BC850C
hFE —
—
—
110
200
420
90
150
270
180
290
520
—
—
—
220
450
800
—
Collector–Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA)
Collector–Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA) VCE(sat) —
——
—0.25
0.6 V
Base–Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA)
Base–Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA) VBE(sat) —
—0.7
0.9 —
—V
Base–Emitter Voltage (IC = 2.0 mA, VCE = 5.0 V)
Base–Emitter Voltage (IC = 10 mA, VCE = 5.0 V) VBE(on) 580
—660
—700
770 mV
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
(IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz) fT100 — — MHz
Output Capacitance (VCB = 10 V, f = 1.0 MHz) Cobo — — 4.5 pF
Noise Figure (IC = 0.2 mA, BC846A, BC847A, BC848A
VCE = 5.0 Vdc, RS = 2.0 kΩ, BC846B, BC847B, BC848B
f = 1.0 kHz, BW = 200 Hz) BC847C, BC848C
BC849A,B,C, BC850A,B,C
NF
—
——
—10
4.0
dB
Figure 1. Normalized DC Current Gain
IC, COLLECTOR CURRENT (mAdc)
2.0
Figure 2. “Saturation” and “On” Voltages
IC, COLLECTOR CURRENT (mAdc)
0.2 0.5 1.0 10 20 50
0.2 100
Figure 3. Collector Saturation Region
IB, BASE CURRENT (mA)
Figure 4. Base–Emitter Temperature Coefficient
IC, COLLECTOR CURRENT (mA)
2.0 5.0 200
0.6
0.7
0.8
0.9
1.0
0.5
0
0.2
0.4
0.1
0.3
1.6
1.2
2.0
2.8
2.4
1.2
1.6
2.0
0.02 1.0 10
020
0.1
0.4
0.8
hFE, NORMALIZED DC CURRENT GAIN
V, VOLTAGE (VOLTS)
VCE, COLLECTOR–EMITTER VOLTAGE (V)
VB, TEMPERATURE COEFFICIENT (mV/ C)
°θ
1.5
1.0
0.8
0.6
0.4
0.3
0.2 0.5 1.0 10 20 50
2.0 10070
307.05.03.00.70.30.1
0.2 1.0 10 100
TA = 25
°
C
VBE(sat) @ IC/IB = 10
VCE(sat) @ IC/IB = 10
VBE(on) @ VCE = 10 V
VCE = 10 V
TA = 25
°
C
–55
°
C to +125
°
CTA = 25
°
C
IC = 50 mA IC = 100 mA
IC = 200 mA
IC =
20 mA
IC =
10 mA
1.0
3
Motorola Small–Signal Transistors, FETs and Diodes Device Data
BC847/BC848
Figure 5. Capacitances
VR, REVERSE VOLTAGE (VOLTS)
10
Figure 6. Current–Gain – Bandwidth Product
IC, COLLECTOR CURRENT (mAdc)
0.4 0.6 1.0 10 20
1.0
Figure 7. DC Current Gain
IC, COLLECTOR CURRENT (mA)
Figure 8. “On” Voltage
IC, COLLECTOR CURRENT (mA)
2.0 6.0 40
80
100
200
300
400
60
20
40
30
0.8
1.0
0.6
0.2
0.4
1.0
2.0
0.1 1.0 10 100
0.2
0.2
0.5
7.0
5.0
3.0
2.0
0.7 1.0 10 202.0 50
307.05.03.00.5
0.2 1.0 10 200
TA = 25
°
C
VBE(sat) @ IC/IB = 10
VCE(sat) @ IC/IB = 10
VBE @ VCE = 5.0 V
VCE = 10 V
TA = 25
°
C
Figure 9. Collector Saturation Region
IB, BASE CURRENT (mA)
Figure 10. Base–Emitter Temperature Coefficient
IC, COLLECTOR CURRENT (mA)
–1.0
1.2
1.6
2.0
0.02 1.0 10
020
0.1
0.4
0.8
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
VB, TEMPERATURE COEFFICIENT (mV/ C)
°θ
0.2 2.0 10 200
1.0
TA = 25
°
C
200 mA
50 mA
IC =
10 mA
hFE, DC CURRENT GAIN (NORMALIZED)
V, VOLTAGE (VOLTS)
C, CAPACITANCE (pF)
f, CURRENT–GAIN – BANDWIDTH PRODUCT (MHz)
T
0.8 4.0 8.0
TA = 25
°
C
Cob
Cib
VCE = 5 V
TA = 25
°
C
00.5 2.0 5.0 20 50 100
0.05 0.2 0.5 2.0 5.0
100 mA
20 mA
–1.4
–1.8
–2.2
–2.6
–3.0 0.5 5.0 20 50 100
–55
°
C to 125
°
C
θ
VB for VBE
4 Motorola Small–Signal Transistors, FETs and Diodes Device Data
BC846
Figure 11. Capacitance
VR, REVERSE VOLTAGE (VOLTS)
40
Figure 12. Current–Gain – Bandwidth Product
IC, COLLECTOR CURRENT (mA)
0.1 0.2 1.0 50
2.0 2.0 10 100
100
200
500
50
20
20
10
6.0
4.0
1.0 10 50 100
5.0
VCE = 5 V
TA = 25
°
C
C, CAPACITANCE (pF)
f, CURRENT–GAIN – BANDWIDTH PRODUCT
T
0.5 5.0 20
TA = 25
°
C
Cob
Cib
5
Motorola Small–Signal Transistors, FETs and Diodes Device Data
INFORMATION FOR USING THE SOT–23 SURFACE MOUNT PACKAGE
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS
Surface mount board layout is a critical portion of the total
design. The footprint for the semiconductor packages must
be the correct size to insure proper solder connection
interface between the board and the package. With the
correct pad geometry, the packages will self align when
subjected to a solder reflow process.
SOT–23
mm
inches
0.037
0.95
0.037
0.95
0.079
2.0
0.035
0.9
0.031
0.8
SOT–23 POWER DISSIPATION
The power dissipation of the SOT–23 is a function of the
pad size. This can vary from the minimum pad size for
soldering to a pad size given for maximum power dissipation.
Power dissipation for a surface mount device is determined
by TJ(max), the maximum rated junction temperature of the
die, RθJA, the thermal resistance from the device junction to
ambient, and the operating temperature, TA. Using the
values provided on the data sheet for the SOT–23 package,
PD can be calculated as follows:
PD = TJ(max) – TA
RθJA
The values for the equation are found in the maximum
ratings table on the data sheet. Substituting these values into
the equation for an ambient temperature T A of 25°C, one can
calculate the power dissipation of the device which in this
case is 225 milliwatts.
PD = 150°C – 25°C
556°C/W = 225 milliwatts
The 556°C/W for the SOT–23 package assumes the use
of the recommended footprint on a glass epoxy printed circuit
board to achieve a power dissipation of 225 milliwatts. There
are other alternatives to achieving higher power dissipation
from the SOT–23 package. Another alternative would be to
use a ceramic substrate or an aluminum core board such as
Thermal Clad. Using a board material such as Thermal
Clad, an aluminum core board, the power dissipation can be
doubled using the same footprint.
SOLDERING PRECAUTIONS
The melting temperature of solder is higher than the rated
temperature of the device. When the entire device is heated
to a high temperature, failure to complete soldering within a
short time could result in device failure. Therefore, the
following items should always be observed in order to
minimize the thermal stress to which the devices are
subjected.
•Always preheat the device.
•The delta temperature between the preheat and
soldering should be 100°C or less.*
•When preheating and soldering, the temperature of the
leads and the case must not exceed the maximum
temperature ratings as shown on the data sheet. When
using infrared heating with the reflow soldering method,
the difference shall be a maximum of 10°C.
•The soldering temperature and time shall not exceed
260°C for more than 10 seconds.
•When shifting from preheating to soldering, the
maximum temperature gradient shall be 5°C or less.
•After soldering has been completed, the device should
be allowed to cool naturally for at least three minutes.
Gradual cooling should be used as the use of forced
cooling will increase the temperature gradient and result
in latent failure due to mechanical stress.
•Mechanical stress or shock should not be applied during
cooling.
* Soldering a device without preheating can cause excessive
thermal shock and stress which can result in damage to the
device.
6 Motorola Small–Signal Transistors, FETs and Diodes Device Data
PACKAGE DIMENSIONS
DJ
K
L
A
C
BS
H
GV
3
12
CASE 318–08
ISSUE AE
SOT–23 (TO–236AB)
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
DIM
AMIN MAX MIN MAX
MILLIMETERS
0.1102 0.1197 2.80 3.04
INCHES
B0.0472 0.0551 1.20 1.40
C0.0350 0.0440 0.89 1.11
D0.0150 0.0200 0.37 0.50
G0.0701 0.0807 1.78 2.04
H0.0005 0.0040 0.013 0.100
J0.0034 0.0070 0.085 0.177
K0.0180 0.0236 0.45 0.60
L0.0350 0.0401 0.89 1.02
S0.0830 0.0984 2.10 2.50
V0.0177 0.0236 0.45 0.60
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE
MATERIAL.
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty , representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
and specifically disclaims any and all liability , including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different
applications. All operating parameters, including “T ypicals” must be validated for each customer application by customer’s technical experts. Motorola does
not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in
systems intended for surgical implant into the body , or other applications intended to support or sustain life, or for any other application in which the failure of
the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such
unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless
against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part.
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BC846ALT1/D
◊
