SiBOD™
Series
Thyristors (SiBOD™Breakover Devices)
Crydom’s SiBOD Series Equals
“Crow Bar” Protection
To protect sensitive telecommunications
circuitry, Crydom Thyristors (SiBOD™
Breakover Devices) “crow bar” potential-
ly dangerous transients – switching them
to ground and dissipating the voltage to
zero. This approach can handle more
energy than TVS diode “clamping.”
FEATURES
• Glass passivated junction
• Bi-directional transient voltage
protection
• Nano second clamping response
• Surge capability up to 500 amps
• No performance degradation under
service life
BENEFITS
• One component cost for +ve
and -ve protection
• Excellent voltage protection levels
• Can be used for primary or secondary
protection
• No replacement required ie,
no maintenance cost
• Highest level of quality and reliability
• Low cost auto assembly
MECHANICAL CHARACTERISTICS
• Transfer molded, void free epoxy body
• Tin/Lead plated leads
• Maximum case temperature for solder-
ing purposes: 230°C for 10 seconds
SiBOD™
Series
To Order: 1-877-502-5500 Fax: 1-858-715-7280
Specify Crydom
… for these industry-leading
components and products:
• Solid State Relays
Printed Circuit Board Mount
Panel Mount
DIN Rail Mount
• Power Cubes
• I/O Modules
• Transient Voltage
Suppression Components
TVS Diodes
Thyristor Suppression
Devices
Gas Discharge Tubes (GDT)
Zeners/Studs
Hybrid Arrester Devices
Get TVS Insurance From
The People Who Know
There’s too much riding on over-voltage
surge protection to take chances. That’s
why more and more people are turning
to Crydom.
Why?
To start with, we don’t just sell TVS compo-
nents – we’re the only company develop-
ing, designing and manufacturing all five
of the basic product families: Transient
Voltage Suppression (TVS) Diodes. SiBOD™
Thyristor Suppression Devices. Gas Discharge
Tubes (GDT). Hybrid Arrester Over-Voltage
Surge Protectors. Zeners/Studs. And the
only company employing all three voltage
protection technologies – gas tube, semi-
conductor and hybrid.
That means we're the only one who knows
them inside and out. What each type can
and can't do. Which type to use for differ-
ent applications. How to provide as much
or little technical support as you need.
How to work with you to develop special
devices should you require them. And
even assist you in formulating design
requirements and testing procedures to
meet both your specifications and inter-
national standards.
DC SUPPLY
R
Equipment
to be
protected
VC
IH > VC
R
SLIC PROTECTION
CR0640SB
CR0640SB
To SLIC
Line
Line
(-)
CR0640SB To SLIC
Line
Line (-)
(+)
(-)
or
COMPLETE PC BOARD
OPERATION PROTECTION
(-)
CR0640
SB
(-)
(+)(-)
Integrated
SLIC
-V
Battery
Line
Line Secondary
protection
off-hook
Primary
protection
on-hook
CR2300
SB
Ring
relay
On-hook
Off-hook
On-hook
Off-hook
Ring
Generator
or Ring
Detection
Circuit
PABX PROTECTION
CR1300SB
CR1300SB
2To Order: 1-877-502-5500 Fax: 1-858-715-7280
Thyristors (SiBOD™Breakover Devices)
SiBOD
Series
Application Notes
The Added Crydom Benefit
Crydom Thyristors (SiBOD™Breakover
Devices) offer the highest quality and
performance. They also come with an
added benefit – service and technical
assistance to help ensure optimum p ro-
tection for your telecommunications
application.
SiBOD Series
The Crydom SiBOD is a four-layer thyristor-
based protector designed specifically for
telecommunications applications. It has
greater capacity for diverting surge cur-
rents than an avalanche TVS device.
The Crydom series protector is based on
the proven technology of the SiBOD prod-
uct. Designed for transient voltage protec-
tion of telecommunications equipment, it
provides higher power handling than a
conventional avalanche diode (TVS), and
when compared to a GDT offers lower volt-
age clamping levels and infinite surge life.
Electrical Characteristics
The electrical characteristics of the
SiBOD devices are similar to those of a
self-gated Triac, but the SiBOD are two-
terminal devices with no gate. The gate
function is achieved by an internal c urrent
controlled mechanism.
Like the TVS diodes, the SiBOD have a
stand-off voltage (VRM) that should be equal
to or greater than the operating voltage of
the system to be protected. At this voltage
(VRM) the current consumption of the SiBOD
are negligible and will not effect the pro-
tected system.
When a transient occurs, the voltage across
the SiBOD will increase until the breakdown
voltage (VBR) is reached. At this point the
device will operate in a similar way to a
TVS device and is in an avalanche mode.
The voltage of the transient will now be
limited and will only increase by a few
volts as the device diverts more current.
As this transient current rises, a level of
current through the device is reached
(IBO), causing the device to switch to a
fully conductive state such that the volt-
age across the device is now only a few
volts (VT). The voltage at which the device
switches from the avalanche mode to the
fully conductive state (VT) is known as the
breakover voltage (VBO). When the device
is in the VTstate, high currents can be
diverted without damage to the SiBOD
due to the low voltage across the device,
since the limiting factor in such devices is
dissipated power (V X I).
Resetting of the device to the nonconduct-
ing state is controlled by the current flowing
through the device. When the current falls
below a certain value, known as the holding
current (IH), the device resets automatically.
As with the avalanche TVS device, if the
SiBOD device is subjected to a surge
current that is beyond its maximum rating,
the device will fail in short-circuit mode,
which ensures that the equipment is
ultimately protected.
Selecting a SiBOD Device
1. When selecting a device, it is important
that the VRM of the device be equal to or
greater than the operating voltage of the
system. For example, when protecting
the ringing circuit of a telephone handset,
SiBOD VRM > VDC + RINGING VOLTAGE
SiBOD VRM > VDC + V√2X RINGING VOL TAGE
2. The minimum holding current (IH) of the
device must be carefully selected if the
SiBOD is to reset after diverting a surge.
The minimum IHvalue of the SiBOD must
be greater than the current the system is
capable of delivering, otherwise the
device will remain conducting following
a transient condition.
To Order: 1-877-502-5500 Fax: 1-858-715-7280 3
Thyristors (SiBOD™Breakover Devices)
SiBOD
Series
Application Notes
VOLTAGE
VOLTS
800
1500
1000
1500
600
1000
1000
2500
1000
1500
1000
1500
4000
1500
1000
2000
2000
Level 3
Level 4
2000
WAVEFORM
µSEC
10x560
10x160
9x720
9x720
10x1000
10x360
10x1000
2x10
10x360
10x700
10x700
10x700
10x700
.5x700
.5x700
10x700
1.2x50
10x700
1.2x50
10x700
CURRENT
AMPS
100
200
25
37.5
100
100
100
500
25
37.5
25/100
37.5
100
38
25
50
50
50
100
50
WAVEFORM
µSEC
10x560
10x160
5x320
5x320
10x1000
10x360
10x1000
2x10
10x360
5x310
5x310
5x310
5x310
.2x310
.8x310
5x310
1x20
5x310
8x20
5x310
I
H
> SYSTEM VOLTAGE
SOURCE IMPEDANCE
The SiBOD range can be used to protect against surges
as defined in the following International Standards
Standard
FCC Part 68
Surge A Metallic
Surge A Longitudinal
Surge B Metallic
Surge B Longitudinal
Bellcore GR 1089
1
2
3
4
5
ITU K.17
ITU K.20
ITU K.21
RLM 88, CNET
CNET 131-24
VDE 0433
VDE 0878
IEC 61000-4-5
FTZ R12
SIBOD
SERIES
B or C
C
A, B or C
A, B or C
C
B or C
C
C
A, B or C
A, B or C
A, B or C
A, B or C
B or C
A, B or C
A, B or C
A, B or C
A, B or C
A, B or C
A, B or C
A, B or C
4To Order: 1-877-502-5500 Fax: 1-858-715-7280
I
RM
I
BO
I
H
I
T
V
RM
V
T
V
BR
MIN. V
BO
V-I Graph Illustrating Symbols and Terms
for the SiBOD Surge Protection Devices
Thyristors (SiBOD™Breakover Devices)
SiBOD
Series
ELECTRICAL CHARACTERISTICS
(Tj = 25°C)
SYMBOL PARAMETER
VRM Stand-off voltage
VBR Breakdown voltage
VBO/VSBreakover voltage
VTOn-state voltage
IRM Stand-off current
IBO Breakover current
IHHolding current
Co Off state Capacitance
Ipp Peak pulse current
PARAMETER
Storage and operating junction
temperature range
Maximum temperature for soldering
(For period of 10 seconds max.)
Maximum case temperature
VALUE
ABSOLUTE RATINGS
SYMBOL
T stg
Tj
TL
TC
30
100
50
10 20 30 40 50 60 70
90
tr
t1
t2
td = 50 µs
VRSM
VRSM
tr=1.67 x (t2-t1)=1.2µs
Time (µs)
Percentage Peak Voltage
10
100
50
Percentage Peak Current
10 2 0 30 40 50
90
t1
t2
tr 1RSM
1RSM
1SM
tr = 1.25 x (t2-t1) = 8 µs
td=
20 µs
or
Time (µs)
DO-214
-40 to 150
150
230
75
TO-220
-40 to 150
150
230
115
T10
-40 to 150
150
230
75
UNIT
C˚
C˚
C˚
C˚
5.21/5.59
4.06/4.57
.102
.203
0.76/1.27
Seating Plane
0.076 max.
2.0 3.30-3.81
2.18/2.44
2.26
Solder pads
All dimensions in mm
2.1 2.74 2.16
To Order: 1-877-502-5500 Fax: 1-858-715-7280 5
Thyristors (SiBOD™Breakover Devices)
SiBOD
Series
DO-214
TAPE & REEL PACKAGING Our surface-mount components are
placed in embossed cavities of anti-stat-
ic/conductive carrier tape and sealed
with a cover tape. The taped devices are
supplied in reels in protective boxes. The
standard Crydom lead-tape packaging of
surface-mount components follow the
requirements of EIA 481-1, shown below:
• Cover Tape: This will not extend over
the edge of the carrier tape or extend
over any part of the sprocket holes.
• Carrier Tape: This will release from the
reel hub as the last portion of the tape
unwinds from the reel without damage to
the carrier tape and with the components
remaining in the cavities.
• Leader Tape: A minimum length of
300mm leader (and trailer) of tape will
be provided before the first (and after
the last) component on the reel, with a
minimum of forty empty component car-
rier pockets covered with tape.
Direction of tape feed
Sprocket holes
Cover tape
Embossed carrier
JEDEC CASE
TYPE
DO-214AA
TAPE
WIDTH
(mm)
12
QUANTITY PER REEL
330mm Reel
(øD) (T3)
3000
CR S
Voltage
PP
Maximum
A = 50A (10 x 560
µ
s)
B = 100A (10 x 560
µ
s)
C = 500A (2 x 10
µ
s)
Peak Pulse
2/10µs
8/20µs
10/160µs
10/560µs
10/1000µs
SA
-
150
100
50
-
SB
-
250
150
100
-
SC
500
400
200
-
100
Stock Device Code Reverse Maximum Maximum Maximum Maximum Minimum Typical
Number Stand-off Breakover Voltage Reverse Breakover Holding Capacitance
Voltage Voltage Turnon Leakage Current Current @1MHz
(VR)(V
BO) @ IBO (VT) @ 1A (IR) @ VR(IBO)(IH)2V Bias
VVVµAmAmApF
CR0300 SA, SB, SC
CR0640 SA, SB, SC
CR0720 SA, SB, SC
CR0800 SA, SB, SC
CR1100 SA, SB, SC
CR1300 SA, SB, SC
CR1500 SA, SB, SC
CR1800 SA, SB, SC
CR2300 SA, SB, SC
CR2600 SA, SB, SC
CR3100 SA, SB, SC
CR3500 SA, SB, SC
CR4000 SA, SB, SC
030 A, B, or C
064 A, B, or C
072 A, B, or C
080 A, B, or C
110 A, B, or C
130 A, B, or C
150 A, B, or C
180 A, B, or C
230 A, B, or C
260 A, B, or C
310 A, B, or C
350 A, B, or C
400 A, B or C
Electrical Characteristics
DO-214
800.0
800.0
800.0
800.0
800.0
800.0
800.0
800.0
800.0
800.0
800.0
800.0
800.0
150.0
150.0
150.0
150.0
150.0
150.0
150.0
150.0
150.0
150.0
150.0
150.0
150.0
5
5
5
5
5
5
5
5
5
5
5
5
5
200.0
120.0
90.0
90.0
90.0
60.0
60.0
60.0
45.0
45.0
45.0
45.0
45.0
40
77
88
98
130
160
180
220
260
300
350
400
450
5
5
5
5
5
5
5
5
5
5
5
5
5
25
58
65
75
90
120
140
160
190
220
275
320
375
*Note: The typical capacitance values listed in this chart are for SA and SB. SC capacitance is approximately double that of SA and SB.
*
Part Reverse Maximum Reverse Maximum Typical Maximum Maximum Minimum Typical
Number Stand-off Breakover Stand-off Breakover Voltage Reverse Breakover Holding Cap.
Voltage Voltage Voltage Voltage Turnon Leakage Current Current @1MHz
(VR)(V
BO) @ IBO (VR)(V
BO) @ IBO (VT) @ 1A (IR) @ VR(IBO)(IH)2V Bias
pins 1-2 & 3-2 pins 1-3
VV V VVµAmAmApF
CR1553 AA, AB, AC
CR1803 AA, AB, AC
CR2103 AA, AB, AC
CR2353 AA, AB, AC
CR2703 AA, AB, AC
CR3203 AA, AB, AC
CR3403 AA, AB, AC
5.0
5.0
5.0
5.0
5.0
5.0
5.0
10.0
10.0
10.0
10.0
10.0
10.0
10.0
800.0
800.0
800.0
800.0
800.0
800.0
800.0
150.0
150.0
150.0
150.0
150.0
150.0
150.0
60.0
60.0
60.0
60.0
45.0
45.0
45.0
180.0
210.0
250.0
270.0
300.0
350.0
400.0
130.0
150.0
170.0
200.0
230.0
270.0
300.0
180.0
210.0
250.0
270.0
300.0
350.0
400.0
130.0
150.0
170.0
200.0
230.0
270.0
300.0
Electrical Characteristics (3 chip)
6To Order: 1-877-502-5500 Fax: 1-858-715-7280
Thyristors (SiBOD™Breakover Devices)
CR A
Voltage
PP
Maximum
A = 50A (10 x 560
µ
s)
B = 100A (10 x 560
µ
s)
C = 500A (2 x 10
µ
s)
Peak Pulse
2/10µs
8/20µs
10/160µs
10/560µs
10/1000µs
AA
-
150
100
50
-
AB
-
250
150
100
-
AC
500
400
200
-
100
SiBOD
Series
TO-220
Part Reverse Maximum Reverse Maximum Typical Maximum Maximum Minimum Typical
Number Stand-off Breakover Stand-off Breakover Voltage Reverse Breakover Holding Cap.
Voltage Voltage Voltage Voltage Turnon Leakage Current Current @1MHz
(VR)(V
BO) @ IBO (VR)(V
BO) @ IBO (VT) @ 1A (IR) @ VR(IBO)(IH)2V Bias
pins 1-2 & 3-2 pins 1-3
VV V VVµAmAmApF
CR0602 AA, AB, AC
CR1402 AA, AB, AC
CR1602 AA, AB, AC
CR2202 AA, AB, AC
CR2702 AA, AB, AC
CR3002 AA, AB, AC
CR3602 AA, AB, AC
CR4202 AA, AB, AC
CR4802 AA, AB, AC
CR6002 AA, AB, AC
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
800.0
800.0
800.0
800.0
800.0
800.0
800.0
800.0
800.0
800.0
150.0
150.0
150.0
150.0
150.0
150.0
150.0
150.0
150.0
150.0
200.0
120.0
90.0
90.0
60.0
60.0
60.0
45.0
45.0
45.0
80.0
154.0
190.0
260.0
320.0
360.0
440.0
500.0
600.0
700.0
50.0
116.0
130.0
180.0
240.0
280.0
320.0
380.0
440.0
550.0
40.0
77.0
95.0
130.0
160.0
180.0
220.0
250.0
300.0
350.0
25.0
58.0
65.0
90.0
120.0
140.0
160.0
190.0
220.0
275.0
Electrical Characteristics (2 chip)
*Note: The typical capacitance values listed in this chart are for AA and AB. AC capacitance is approximately double that of AA and AB.
*Note: The typical capacitance values listed in this chart are for AA and AB. AC capacitance is approximately double that of AA and AB.
2.54
All dimensions in mm
5.08
0.8
10.16 10.42 4.52 4.78
0.61
0.46
7.9 8.2
11.1 11.3
9.14 9.53
3.2
3.1
Modified
TO-220
*
*
To Order: 1-877-502-5500 Fax: 1-858-715-7280 7
Thyristors (SiBOD™Breakover Devices)
SiBOD
Series
T10A, T10B, T10C
MINIMUM HOLDING CURRENTS IHMIN.
Suffix IH
B120
E180
T10
Package
A = DO15
B = DO-201
C = GDT outline
Voltage
Holding current
B = 120 IH min.
E = 180 IH min.
FEATURES
• High current diverting capability,
150 A, 8 X 20 µs)
• Low capacitance, less than 100 pF
Peak Pulse
8/20µs
10/700 1-5kv
10/1000µs
T10A
150
37.5
50
T10B
250
125
100
T10C
250
125
100
Electrical Characteristics
T10A
T10C
Ø1.016±0.050
25.4 min.
25.4 min.
Ø5.080
+0.127
-0.254
9.400+0.127
-0.254
All dimensions in mm
T10B
DEVICE
TYPE
T10 A, B, C 080
T10 A, B, C 110
T10 A, B, C 140
T10 A, B, C 180
T10 A, B, C 220
T10 A, B, C 270
IRM
@ VRM
(µA)
1
1
1
1
1
1
VBR
MIN. @ 1 mA
(V)
80
110
140
180
215
270
VBO
MAX.
(V)
120
135
170
210
265
360
VTTYP
@ 1A
(V)
2
2
2
4
4
4
IBO TYP
(mA)
50
50
50
50
50
50
IH
MIN.
(mA)
B or E
B or E
B or E
B or E
B or E
B or E
VRM
(V)
70
100
120
170
200
240
Ordering Information
For recommended applications and more
information contact:
Sales: 1-877-502-5500
Technical support: 1-877-702-7700
Corporate Headquarters: 1-858-715-7200
Fax: 1-858-715-7280
E-mail: sales@crydom.com
Website: www.crydom.com
FASTFAX Product Info: 1-888-267-9191
Thyristors (SiBOD™Breakover Devices)
SiBOD™
Series
About Crydom
Over the years Crydom has become the
supplier of choice for advanced, high-quality
products like those featured here. It's the
result of our teams of design and production
engineers – material, production control,
and quality assurance experts, and more –
working seamlessly together to create, pro-
duce, and deliver superior components and
products that satisfy the most demanding
environmental and performance require-
ments. We focus on timely delivery and
competitive pricing aimed at meeting your
needs and helping you succeed in today's
fast-paced, fast-changing global markets.
Crydom
9525 Chesapeake Drive
San Diego, CA 92123 USA
©1999 Crydom
Specifications subject to change without notice.
CRYDOM SiBOBSeries 1099-5000 Ver A
Specify Crydom
… for these industry-leading
components and products:
• Solid State Relays
Printed Circuit Board Mount
Panel Mount
DIN Rail Mount
• Power Cubes
• I/O Modules
• Transient Voltage
Suppression Components
TVS Diodes
Thyristor Suppression
Devices
Gas Discharge Tubes (GDT)
Zeners/Studs
Hybrid Arrester Devices
