© Semiconductor Components Industries, LLC, 2017
February, 2018 − Rev. 0
1Publication Order Number:
NVMFS5C638NL/D
NVMFS5C638NL
Power MOSFET
60 V, 3.0 mW, 133 A, Single N−Channel
Features
•Small Footprint (5x6 mm) for Compact Design
•Low RDS(on) to Minimize Conduction Losses
•Low QG and Capacitance to Minimize Driver Losses
•NVMFS5C638NLWF − Wettable Flank Option for Enhanced Optical
Inspection
•AEC−Q101 Qualified and PPAP Capable
•These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter Symbol Value Unit
Drain−to−Source Voltage VDSS 60 V
Gate−to−Source Voltage VGS ±20 V
Continuous Drain
Current RqJC
(Notes 1, 3) Steady
State
TC = 25°CID133 A
TC = 100°C 94
Power Dissipation
RqJC (Note 1)
TC = 25°CPD100 W
TC = 100°C 50
Continuous Drain
Current RqJA
(Notes 1, 2, 3) Steady
State
TA = 25°CID26 A
TA = 100°C 18
Power Dissipation
RqJA (Notes 1 & 2)
TA = 25°CPD4W
TA = 100°C 2
Pulsed Drain Current TA = 25°C, tp = 10 msIDM 811 A
Operating Junction and Storage Temperature TJ, Tstg −55 to
+ 175
°C
Source Current (Body Diode) IS84 A
Single Pulse Drain−to−Source Avalanche
Energy (IL(pk) = 13 A)
EAS 180 mJ
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
TL260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter Symbol Value Unit
Junction−to−Case − Steady State RqJC 1.5 °C/W
Junction−to−Ambient − Steady State (Note 2) RqJA 40.1
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad.
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
MARKING
DIAGRAM
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XXXXXX
AYWZZ
G (4)
S (1,2,3)
N−CHANNEL MOSFET
D (5)
S
S
S
G
D
D
D
D
DFN5
(SO−8FL)
CASE 488AA
STYLE 1
1
See detailed ordering, marking and shipping information on
page 5 of this data sheet.
ORDERING INFORMATION
XXXXXX = 5C638L
XXXXXX = (NVMFS5C638NL) or
XXXXXX = 638LWF
XXXXXX = (NVMFS5C638NLWF)
A = Assembly Location
Y = Year
W = Work Week
ZZ = Lot Traceability
V(BR)DSS RDS(ON) MAX ID MAX
60 V
3.0 mW @ 10 V
133 A
4.2 mW @ 4.5 V
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2
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter Symbol Test Condition Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA60 V
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/
TJ
26 mV/°C
Zero Gate Voltage Drain Current IDSS VGS = 0 V,
VDS = 60 V
TJ = 25 °C 10
mA
TJ = 125°C 250
Gate−to−Source Leakage Current IGSS VDS = 0 V, VGS = 20 V 100 nA
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 250 mA1.2 2.0 V
Threshold Temperature Coefficient VGS(TH)/TJ−5.0 mV/°C
Drain−to−Source On Resistance RDS(on) VGS = 10 V ID = 50 A 2.6 3.0
mW
VGS = 4.5 V ID = 50 A 3.6 4.2
Forward Transconductance gFS VDS =15 V, ID = 50 A 130 S
CHARGES AND CAPACITANCES
Input Capacitance CISS
VGS = 0 V, f = 1 MHz, VDS = 25 V
2880
pF
Output Capacitance COSS 1680
Reverse Transfer Capacitance CRSS 22
Total Gate Charge QG(TOT) VGS = 4.5 V, VDS = 48 V; ID = 50 A 18.4 nC
Total Gate Charge QG(TOT) VGS = 10 V, VDS = 48 V; ID = 50 A 40.7 nC
Threshold Gate Charge QG(TH)
VGS = 10 V, VDS = 48 V; ID = 50 A
4.5
nC
Gate−to−Source Charge QGS 8.6
Gate−to−Drain Charge QGD 3.8
Plateau Voltage VGP 3.0 V
SWITCHING CHARACTERISTICS (Note 5)
Turn−On Delay Time td(ON)
VGS = 10 V, VDS = 48 V,
ID = 50 A, RG = 1 W
15
ns
Rise Time tr58
Turn−Off Delay Time td(OFF) 66
Fall Time tf96
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage VSD VGS = 0 V,
IS = 50 A
TJ = 25°C 0.84 1.2
V
TJ = 125°C 0.73
Reverse Recovery Time tRR
VGS = 0 V, dIs/dt = 100 A/ms,
IS = 50 A
42
ns
Charge Time ta21
Discharge Time tb22
Reverse Recovery Charge QRR 28 nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
5. Switching characteristics are independent of operating junction temperatures.
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3
TYPICAL CHARACTERISTICS
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
VGS, GATE−TO−SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW)
RDS(on), NORMALIZED DRAIN−TO−
SOURCE RESISTANCE
IDSS, LEAKAGE (nA)
TJ = 125°C
TJ = 25°C
TJ = −55°C
TJ = 25°C
ID = 50 A
TJ = 25°C
VGS = 10 V
VGS = 10 V
ID = 50 A
TJ = 125°C
TJ = 85°C
TJ = 150°C
3.6 V to 10 V
0
20
40
60
80
100
0 0.5 1.0 1.5 2.0
2.8 V
2
4
6
8
10
12
2 4 5 6 7 9 10 30 50 110 150
5
0
90
0.6
0.8
1.4
−50 −25 0 25 50 75 100 125 150 175
10
100
1K
100K
51525
16
18
20
4
3
2
1
10
35 45
8
VGS = 4.5 V
3.0 V
14
6
2.5
120
0
20
40
60
80
012345
100
120
1.6
1.0
1.8
2.0
3.2 V
55
3
1.2
70 130
10K
NVMFS5C638NL
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4
TYPICAL CHARACTERISTICS
Figure 7. Capacitance Variation Figure 8. Gate−to−Source Voltage vs. Total
Charge
VDS, DRAIN−TO−SOURCE VOLTAGE (V) QG, TOTAL GATE CHARGE (nC)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
RG, GATE RESISTANCE (W)VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. IPEAK vs. Time in Avalanche
VDS, DRAIN−TO−SOURCE VOLTAGE(V) TIME IN AVALANCHE (s)
C, CAPACITANCE (pF)
VGS, GATE−TO−SOURCE VOLTAGE (V)
t, TIME (ns)
IS, SOURCE CURRENT (A)
ID, DRAIN CURRENT (A)
IPEAK, (A)
VGS = 0 V
TJ = 25°C
f = 1 MHz
CISS
COSS
CRSS
VDS = 48 V
ID = 50 A
TJ = 25°C
QGS QGD
VGS = 10 V
VDS = 48 V
td(off)
td(on)
tf
tr
TJ = 25°CTJ = −55°C
TJ (initial) = 100°C
TJ (initial) = 25°C
RDS(on) Limit
Thermal Limit
Package Limit
10 ms
1 ms
10 ms
TC = 25°C
VGS ≤ 10 V
Single Pulse
1
100
10K
02040
0
2
4
10
0152030
1
10
111
40
0.3 0.6 0.8 0.9 1.0
1000
1 10 1000.1
100
10
1
0.1 1
10
100
0.00001 0.001 0.01
10 5
1
3
5
TJ = 125°C
VGS = 0 V
10 25
1K
0
10
30
1000
0.5 ms
0.0001
0.7
4035
10
50
6050
6
7
8
9
20
1K
100
21 31 41 0.50.4
30
NVMFS5C638NL
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5
TYPICAL CHARACTERISTICS
0.01
0.1
1
10
100
0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Figure 13. Thermal Characteristics
PULSE TIME (sec)
RqJA (°C/W)
Single Pulse
50% Duty Cycle
20%
10%
5%
2%
1%
DEVICE ORDERING INFORMATION
Device Marking Package Shipping†
NVMFS5C638NLT1G 5C638L DFN5
(Pb−Free)
1500 / Tape & Reel
NVMFS5C638NLWFT1G 638LWF DFN5
(Pb−Free, Wettable Flanks)
1500 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
NVMFS5C638NL
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6
PACKAGE DIMENSIONS
M3.00 3.40
q0 −−−
_
3.80
12
_
DFN5 5x6, 1.27P
(SO−8FL)
CASE 488AA
ISSUE M
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION D1 AND E1 DO NOT INCLUDE
MOLD FLASH PROTRUSIONS OR GATE
BURRS.
1234
TOP VIEW
SIDE VIEW
BOTTOM VIEW
D1
E1 q
D
E
2
2
B
A
0.20 C
0.20 C
2 X
2 X
DIM MIN NOM
MILLIMETERS
A0.90 1.00
A1 0.00 −−−
b0.33 0.41
c0.23 0.28
D5.15
D1 4.70 4.90
D2 3.80 4.00
E6.15
E1 5.70 5.90
E2 3.45 3.65
e1.27 BSC
G0.51 0.575
K1.20 1.35
L0.51 0.575
L1 0.125 REF
A
0.10 C
0.10 C
DETAIL A
14
L1
e/2
8X
D2
G
E2
K
b
A0.10 B
C
0.05 cL
DETAIL A
A1
c
4 X
C
SEATING
PLANE
MAX
1.10
0.05
0.51
0.33
5.10
4.20
6.10
3.85
0.71
1.50
0.71
STYLE 1:
PIN 1. SOURCE
2. SOURCE
3. SOURCE
4. GATE
5. DRAIN
M
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
1.270
2X
0.750
1.000
0.905
4.530
1.530
4.5600.495
3.200
1.330
0.965
2X
2X
4X
4X
PIN 5
(EXPOSED PAD)
5.00 5.30
6.00 6.30
PITCH
DIMENSIONS: MILLIMETERS
1
RECOMMENDED
e
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Phone: 421 33 790 2910
NVMFD5C638NL/D
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