1
ASDL-4262
High Power T-1¾ (5mm) AlGaAs/GaAs Infrared (940nm) Lamp
Data Sheet
Description
ASDL-4262 is a high power Infrared emitter that utilizes
AlGaAs on GaAs LED technology. It is optimized for
high eciency at emission wavelength of 940nm and
is designed for application that requires high radiant
intensity, low forward voltage at wide viewing angle. The
emitter is encapsulated in T-1¾ (5mm) package and is
suitable for high performance replacements of standard
emitters.
Features
• T-1¾ Package
• 940nm wavelength
• Wide Viewing Angle
• High Power
• Pulse Operating
• Low Forward Voltage
• Ideal for high current and low forward voltage
application
• Lead Free & ROHS Compliant
• Available in Tape & Reel
Applications
• IR Remote Control for Consumer Devices
• IR Remote Control for Industrial Equipment
• Photo-interrupters
• Infrared Illuminator Security Camera
• Reective Applications
2
Notes:
1. All dimensions are in millimeters (inches)
2. Tolerance is + 0.25mm (.010”) unless otherwise noted
3. Protuded resin under ange is 1.5mm (.059”) max
4. Lead spacing is measured where leads emerge from package
5. Specications are subject to change without notice
Package Dimensions
Ordering Information
Part Number Lead Form Color Packaging Shipping Option
ASDL-4262-C22
ASDL-4262-C31
Straight Clear Tape & Reel
Bulk
4000pcs
8000pcs / Carton
3
Absolute Maximum Ratings at 25°C
Parameter Symbol Min. Max Unit Reference
Peak Forward Current IFPK 2 A 300pps
DC Forward Current IFDC 100 mA
Power Dissipation PDISS 150 mW
Reverse Voltage VR5 V
Operating Temperature TO-40 85 °C
Storage Temperature TS-55 100 °C
LED Junction Temperature TJ110 °C
Lead Soldering Temperature
[4.0mm (0.157”) From Body]
320 °C for 3 sec
Electrical Characteristics at 25°C
Parameter Symbol Min. Typ. Max. Unit Condition
Forward Voltage VF1.25 1.6 V IFDC=50mA
Reverse Voltage VR5 V IR=100uA
Thermal Resistance,
Junction to Ambient
RqJA 350 °C/W
Optical Characteristics at 25°C
Parameter Symbol Min. Typ. Max. Unit Condition
Radiant On-Axis Intensity IE30 - mW/Sr IFDC=100mA
Viewing Angle 2θ1/2 50 deg
Peak wavelength λPK 940 nm IFDC = 20mA
Spectral Width Δλ 50 nm IFDC = 20mA
Optical Rise Time tr/tf1 us IFPK=100mA
Duty Factor=50%
Pulse Width=10us
Optical Fall Time tf 1 us IFPK=100mA
Duty Factor=50%
Pulse Width=10us
1.0 1.5 2.0 2.5 3.0
1000
100
10
0
0 200 400 600 800 1000
40
32
24
16
8
0
0
0.5
1.0
1040940840 100806040200-20
120
100
80
60
40
20
-40
0
4
12
20
28
36
Relative Radiant Intensity
Wavelength (nm)
Figure 1. SPECTRAL DISTRIBUTION
Forward Current IF (mA)
Ambient Temperature Ta ( C)
Figure 2. FORWARD CURRENT VS. AMBIENT TEMPERATURE
Forward Current (mA)
Figure 3. FORWARD CURRENT VS. FORWARD VOLTAGE
Forward Voltage (V)
Figure 4. RELATIVE RADIANT INTENSITY VS. AMBIENT TEMPERATURE
0.6
Output Power Relative To
Value at IF=20mA
0.2
0
0.4
0.8
1.2
1.0
-20 20 40 600 80
Value at IF=20mA
Output Power Relative To
Figure 5. RELATIVE RADIANT INTENSITY VS. FORWARD CURRENT
Foward Current (mA)
Relative Radiant Intensity
Figure 6. RADIATION DIAGRAM
0.60.5 0.3 0.1 0.2 0.4
0 2010 oo o
80 o
90 o
70
60
o
o
50
40
o
o
30 o
0.9
0.7
0.8
1.0
o
Ambient Temperature Ta ( C)
o
Typical Electrical/Optical Characteristics Curves (TA=25˚C unless otherwise indicated)
For product information and a complete list of distributors, please go to our web site: www.avagotech.com
Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies, Limited in the United States and other countries.
Data subject to change. Copyright © 2007 Avago Technologies Limited. All rights reserved.
AV02-0016EN - January 22, 2007