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CONNECTORIZED MODULES - SWITCHES
11
HMC-C019
HIGH ISOLATION SPST SWITCH
MODULE, DC - 20 GHz
v02.1007
General Description
Features
Functional Diagram The HMC-C019 is a high speed, high isolation GaAs
MESFET SPST switch housed in a miniature hermetic
module with eld replaceable SMA connectors.
Covering DC to 20 GHz, the switch features 100 dB
isolation up to 4 GHz and 65 dB isolation up to 20
GHz. CMOS interface allows a positive +5V bias
voltage at very low DC currents. This non-re ective
switch exhibits very fast switching speeds, with very
low switching transients making it ideal for high speed
RF pulse modulation applications.
High Isolation: 100 dB up to 4 GHz
65 dB up to 20 GHz
Low Insertion Loss: 3.5 dB @ 10 GHz
4.0 dB @ 16 GHz
Fast Switching RF Pulse Modulator
Non-Re ective Topology
Hermetically Sealed Module
Field Replaceable SMA connectors
-55 to +85 °C Operating Temperature
Electrical Speci cations
TA = +25° C, With Vdc1, Vdc2 = +5V & 0/+5V Control, 50 Ohm System
Typical Applications
The HMC-C019 is ideal for:
• Basestation Infrastructure
• Fiber Optics & Broadband Telecom
• Microwave Radio & VSAT
• Military Radios, Radar, & ECM
• Test Instrumentation
Parameter Frequency Min. Typ. Max. Units
Insertion Loss
DC - 4.0 GHz
DC - 16.0 GHz
DC - 20.0 GHz
3.0
4.0
6.0
3.5
5.5
9.0
dB
dB
dB
Isolation
DC - 4.0 GHz
DC - 10.0 GHz
DC - 16.0 GHz
DC - 20.0 GHz
90
75
70
60
100
80
75
65
dB
dB
dB
dB
Return Loss RF1 & RF2 “On State & Off State” DC - 12.0 GHz
DC - 20.0 GHz
12
8
dB
dB
Input Power for 1 dB Compression 0.5 - 20.0 GHz 20 23 dBm
Input Third Order Intercept
(Two-Tone Input Power= +7 dBm Each Tone)
0.5 - 10.0 GHz
0.5 - 20.0 GHz
45
43
dBm
dBm
Switching Characteristics
tRISE, tFALL (10/90% RF)
tON, tOFF (50% CTL to 10/90% RF)
DC - 20 GHz 2.5
8.5
ns
ns
Switching Transients DC - 20 GHz 20 mVpp