Specifications and information are subject to change without notice
TriQuint Semiconductor, Inc • Phone 503-615-9000 • FAX: 503-615-8900 • e-mail: info-sales@tqs.com • Web site: www.TriQuint.com Page 1 of 4 June 2011
WJA1020
+5V Active-Bias InGaP HBT Gain Block
Product Features
• Cascadable gain block
• 50 – 4000 MHz
• 17 dB Gain @ 1.9GHz
• +17 dBm P1dB @ 1.9GHz
• +34 dBm OIP3 @ 1.9GHz
• Operates from +5V @70mA
• Robust 1000V ESD, Class 1C
• RoHS-compliant SOT-89 package
Applications
• Wireless Infrastructure
• General Purpose
• Cellular GSM, PCS, UMTS
•
W-CDMA
,
TD-SCDMA
,
WiMAX
Product Description
The WJA1020 is a cascadable gain block that offers high
linearity in a low-cost surface-mount package. At 1.9 GHz,
the WJA1020 typically provides 17 dB gain, +34 dBm
OIP3, and +17 dBm P1dB. The device is housed in a
RoHS-compliant SOT-89 industry-standard SMT package
using a NiPdAu plating to eliminate the possibility of tin
whiskering.
The WJA1020 consists of Darlington pair amplifiers using
a high reliability InGaP/GaAs HBT process technology.
The MMIC amplifier is internally matched to 50Ω and only
requires DC-blocking capacitors and a bias inductor for
operation. An internal active bias is designed to enable
stable performance over temperature. A dropping bias
resistor is not required allowing the device to be biased
directly from a +5V supply voltage.
The broadband amplifier can be directly applied to various
current and next generation wireless technologies such as
GSM, CDMA, W-CDMA, WiBro, and WiMAX. The
WJA1020 is ideal for general purpose applications such as
LO buffering, IF amplification and pre-driver stages within
the 50 to 4000 MHz frequency range.
Functional Diagram
RF IN GND
RF OUT
GND
1
2
3
4
Function Pin No.
Input 1
Output/Bias 3
Ground 2, 4
Specifications
(1)
Parameter Units Min Typ Max
Operational Bandwidth MHz 50 4000
Test Frequency MHz 1900
Gain dB 15.5 17.2 18.5
Input Return Loss dB 14
Output Return Loss dB 10
Output P1dB dBm +16.9
Output IP3
(2)
dBm +32 +33.7
Output IP2 dBm +41
Noise Figure dB 5.8
Device Voltage V 5
Device Current mA 59 70 79
1. Test conditions: 25 ºC, Supply Voltage = +5 V, 50 Ω System. S-parameters and 3OIP measured at
device pins. All other specifications measured on evaluation board.
2. 3OIP measured with two tones at an output power of 6 dBm/tone separated by 1 MHz. The
suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
Absolute Maximum Rating
Parameter Rating
Storage Temperature -55 to +150 °C
Supply Voltage +6.5 V
Input Power +24 dBm
θ
jc
(junction to paddle) 83.8
°
C / W
Maximum Junction Temperature
150
°
C
Operation of this device above any of these parameters may cause permanent damage.
Typical Performance
(3)
Parameter
Units
Typical
Frequency MHz 500 900 1900 2140 2500
S21 dB 18.8 18.4 16.7 16.2 15.4
S11 dB -14 -16 -35 -32 -27
S22 dB -18 -15 -9 -10 -11
Output P1dB dBm +19.3 +18.7 +16.9 +16.4 +15
Output IP3
(2)
dBm +34.8 +33.4 +33.0 +32.3 +30.5
Output IP2 dBm +46 +44.2 +41 +37.8 +35.6
Noise Figure dB 4.8 5.1 5.8 6.1 6.4
3. Listed typical performance parameters measured on evaluation board.
Ordering Information
Part No. Description
WJA1020 +5V Active Bias InGaP HBT Gain Block
(lead-free/green/RoHS-compliant SOT-89 Package)
Standard tape / reel size = 1000 pieces on a 7″ Reel
Not Recommended For
New Designs
Recommended replacement parts:
TQP3M9008
Specifications and information are subject to change without notice
TriQuint Semiconductor, Inc • Phone 503-615-9000 • FAX: 503-615-8900 • e-mail: info-sales@tqs.com • Web site: www.TriQuint.com Page 2 of 4 June 2011
WJA1020
+5V Active-Bias InGaP HBT Gain Block
Typical Evaluation Board RF Performance
Supply Bias = +5 V, I
cc
= 70 mA
Gain vs. Frequency
10
12
14
16
18
20
0 1000 2000 3000 4000
Frequency (MHz)
Gain (dB)
-40C +25C +85C
Return Loss
T = 25°C
-40
-35
-30
-25
-20
-15
-10
-5
0
0 1000 2000 3000 4000
Frequency (MHz)
S11, S22 (dB)
S11 S22
Noise Figure vs. Frequency
2
3
4
5
6
7
8
9
10
11
12
0 1000 2000 3000 4000
Frequency(MHz)
NF(dB)
-40C +25C +85C
OIP3 vs. Output Power
26
28
30
32
34
36
0 2 4 6 8 10
Output Power per tone (dBm)
OIP3 (dBm)
OIP3 vs. Frequency
Pout=6 dBm/tone
26
28
30
32
34
36
0 1000 2000 3000
Frequency (MHz)
OIP3 (dBm)
OIP3 vs. Vcc
Freq = 1900MHz
26
28
30
32
34
36
4.7 4.8 4.9 5.0 5.1 5.2
Vcc (V)
OIP3 (dBm)
OIP2 vs. Frequency
Pout=6 dBm/tone
25
30
35
40
45
50
0 1000 2000 3000
Frequency (MHz)
OIP2 (dBm)
P1dB vs. Frequency
10
12
14
16
18
20
0 1000 2000 3000 4000
Frequency(MHz)
P1dB(dBm)
-40C +25C +85C
P1dB vs. Vcc
Freq = 1900MHz
10
12
14
16
18
20
4.7 4.8 4.9 5.0 5.1 5.2
Vcc (V)
P1dB (dBm)
Icc vs. Temperature
Vcc = +5V
65
70
75
80
85
-50 -25 0 25 50 75 100
Temperature (°C)
Icc (mA)
Icc vs. Vcc
Freq = 1900MHz
20
40
60
80
100
120
4.0 4.5 5.0 5.5 6.0
Vcc (V)
Icc (mA)
-40C +25C +85C
Specifications and information are subject to change without notice
TriQuint Semiconductor, Inc • Phone 503-615-9000 • FAX: 503-615-8900 • e-mail: info-sales@tqs.com • Web site: www.TriQuint.com Page 3 of 4 June 2011
WJA1020
+5V Active-Bias InGaP HBT Gain Block
Application Circuit
Recommended Component Values
(1)
Ref. Name Value / Type Size
L1 470 nH ferrite core wire wound inductor
(2)
0805
C1, C2 1000 pF NPO chip capacitor 0603
C3 0.018
µ
F chip capacitor 0603
R1, R2, R4 0
Ω
(3)
0603
C4, R3, R5 Do Not Place
(3)
1. The listed values are contained on the evaluation board to achieve optimal broadband performance
2. For lower cost and performance (500 – 4000 MHz) option use 18 nH air core wire wound inductor.
3. Place holders for the 0Ω resistors and “Do Not Place” references are not needed for final design.
Typical Device Data
S-Parameters (V
device
= +5 V, I
CC
= 70 mA, T = 25 °C, calibrated to device leads)
Freq (GHz) S11 (dB) S11ang S21 (dB) S21ang S12(dB) S12ang S22 (dB) S22ang
10 -13.21 -71.88 22.38 166.31 -25.38 19.43 -9.15 -44.39
50 -14.19 -149.89 19.83 167.94 -22.93 5.99 -17.44 -106.14
100 -14.19 -164.77 19.54 168.38 -22.79 2.21 -20.02 -128.26
200 -14.10 -172.83 19.36 163.00 -22.71 -0.67 -20.85 -141.05
400 -13.56 -177.18 19.31 150.11 -22.67 -4.42 -20.08 -143.75
600 -12.78 179.13 19.14 136.20 -22.65 -8.02 -18.59 -146.95
800 -12.36 173.83 18.92 122.43 -22.55 -11.50 -16.77 -149.03
1000 -12.35 164.48 18.75 109.01 -22.51 -14.61 -14.57 -153.10
1200 -12.46 153.18 18.43 94.69 -22.51 -18.13 -12.90 -157.75
1400 -12.47 142.40 18.09 81.36 -22.35 -21.65 -11.70 -163.21
1600 -12.79 132.81 17.80 67.30 -22.41 -25.07 -11.00 -170.09
1800 -13.55 125.48 17.45 53.42 -22.32 -28.18 -10.48 -177.67
2000 -15.49 117.30 17.10 39.70 -22.29 -32.33 -9.83 174.89
2200 -19.05 105.63 16.60 25.94 -22.32 -35.40 -9.15 166.75
2400 -26.23 84.72 15.96 12.15 -22.29 -38.75 -8.46 160.33
2600 -42.16 -52.66 15.39 -1.86 -22.24 -42.28 -8.10 154.19
2800 -23.19 -115.58 14.67 -14.57 -22.23 -45.97 -7.91 148.03
3000 -16.98 -128.62 13.81 -28.54 -22.06 -49.59 -7.79 141.09
3200 -13.33 -138.45 12.97 -41.03 -22.14 -52.88 -7.55 134.83
3400 -10.97 -146.10 11.97 -53.73 -22.00 -57.15 -7.26 128.58
3600 -9.29 -155.79 10.96 -65.64 -21.89 -61.39 -6.87 124.69
3800 -8.09 -167.06 10.07 -76.69 -21.85 -64.87 -6.62 122.60
4000 -7.00 -178.82 9.00 -87.89 -21.74 -69.25 -6.72 119.44
Device S-parameters are available for Download from the website at: http://www.triquint.com
C1
Blocking
Capacitor
RF OUT
L1
RF Choke
C3
Bypass
Capacitor
R4
0 Ω
RF IN
C2
Blocking
Capacitor
Vcc =+5.00V
Icc = 75mA
WJA1020
R1
0 Ω
R2
0 Ω
Specifications and information are subject to change without notice
TriQuint Semiconductor, Inc • Phone 503-615-9000 • FAX: 503-615-8900 • e-mail: info-sales@tqs.com • Web site: www.TriQuint.com Page 4 of 4 June 2011
WJA1020
+5V Active-Bias InGaP HBT Gain Block
Mechanical Information
This package is lead-free/Green/RoHS-compliant. It is compatible with both lead-free (maximum 260 °C reflow temperature) and leaded
(maximum 245 °C reflow temperature) soldering processes. The plating material on the leads is NiPdAu.
Outline Drawing
Land Pattern
Product Marking
The WJA1020 will be marked with an “A1020”
designator with an alphanumeric lot code
marked below the part designator.
Tape and reel specifications for this part are
located on the website in the “Application
Notes” section.
MSL / ESD Rating
ESD Rating: Class 1C
Value: Passes ≥ 1000V min.
Test: Human Body Model (HBM)
Standard: JEDEC Standard JESD22-A114
ESD Rating: Class IV
Value: Passes ≥ 1000V min.
Test: Charged Device Model (CDM)
Standard: JEDEC Standard JESD22-C101
MSL Rating: Level 3 at +260 °C convection reflow
Standard: JEDEC Standard J-STD-020
Mounting Config. Notes
1. Ground / thermal vias are critical for the proper
performance of this device. Vias should use a .35mm
(#80 / .0135”) diameter drill and have a final plated thru
diameter of .25 mm (.010”).
2. Add as much copper as possible to inner and outer layers
near the part to ensure optimal thermal performance.
3. Mounting screws can be added near the part to fasten the
board to a heatsink. Ensure that the ground / thermal via
region contacts the heatsink.
4. Do not put solder mask on the backside of the PC board in
the region where the board contacts the heatsink.
5. RF trace width depends upon the PC board material and
construction.
6. Use 1 oz. Copper minimum.
7. All dimensions are in millimeters (inches). Angles are in
degrees.
A1020
