DMG2302UQ
Document number: DS38036 Rev. 1 - 2
1 of 6
www.diodes.com
July 2015
© Diodes Incorporated
DMG2302UQ
D
S
G
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS
RDS(ON) max
ID max
TA = +25°C
20V
90mΩ @ VGS = 4.5V
4.2A
120mΩ @ VGS = 2.5V
2.7A
Description and Applications
This MOSFET is designed to minimize the on-state resistance
(RDS(on)) and yet maintain superior switching performance, making it
ideal for high-efficiency power management applications.
General Purpose Interfacing Switch
Power Management Functions
Boost Application
Analog Switch
Features
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)
Mechanical Data
Case: SOT23
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Finish Matte Tin Annealed over Copper
Leadframe. Solderable per MIL-STD-202, Method 208
Weight: 0.008 grams (Approximate)
Ordering Information (Note 5)
Part Number
Case
Packaging
DMG2302UQ-7
SOT-23
3,000/Tape & Reel
DMG2302UQ-13
SOT-23
10,000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the
same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_grade_definitions/.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
Date Code Key
Year
2009
2010
2011
2012
2013
2014
2015
2016
2017
2018
2019
Code
W
X
Y
Z
A
B
C
D
E
F
G
Month
Jan
Feb
Mar
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
1
2
3
4
5
6
7
8
9
O
N
D
Top View
Internal Schematic
Top View
D
GS
G23 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: C = 2015)
M = Month (ex: 9 = September)
G23
YM
DMG2302UQ
Document number: DS38036 Rev. 1 - 2
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July 2015
© Diodes Incorporated
DMG2302UQ
Maximum Ratings (@TA = +25°C unless otherwise specified.)
Characteristic
Symbol
Value
Units
Drain-Source Voltage
VDSS
20
V
Gate-Source Voltage
VGSS
±8
V
Continuous Drain Current (Note 6)
Steady
State
TA = +25°C
TA = +70°C
ID
4.2
3.4
A
Pulsed Drain Current (Note 7)
IDM
27
A
Thermal Characteristics
Characteristic
Symbol
Value
Unit
Power Dissipation (Note 6)
TA = +25°C
TA = +70°C
PD
0.8
0.5
W
Thermal Resistance, Junction to Ambient @TA = +25°C
RθJA
156
°C/W
Operating and Storage Temperature Range
TJ, TSTG
-55 to +150
°C
Notes: 6. Device mounted on FR-4 PCB, with minimum recommended pad layout.
7. Repetitive rating, pulse width limited by junction temperature.
Electrical Characteristics (@TA = +25°C unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
BVDSS
20
–
–
V
VGS = 0V, ID = 10μA
Zero Gate Voltage Drain Current TJ = +25°C
IDSS
–
–
1.0
µA
VDS = 20V, VGS = 0V
Gate-Source Leakage
IGSS
–
–
±100
nA
VGS = ±8V, VDS = 0V
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
VGS(th)
0.4
–
1.0
V
VDS = VGS, ID = 50μA
Static Drain-Source On-Resistance
RDS (ON)
–
–
90
120
mΩ
VGS = 4.5V, ID = 3.6A
VGS = 2.5V, ID = 3.1A
Forward Transfer Admittance
|Yfs|
–
13
–
S
VDS = 5V, ID = 3.6A
Diode Forward Voltage
VSD
–
0.75
1.0
V
VGS = 0V, IS = 1A
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Ciss
–
594.3
–
pF
VDS = 10V, VGS = 0V,
f = 1.0MHz
Output Capacitance
Coss
–
64.5
–
pF
Reverse Transfer Capacitance
Crss
–
57.7
–
pF
Gate Resistance
Rg
–
1.5
–
Ω
VDS = 0V, VGS = 0V, f = 1MHz
Total Gate Charge
Qg
–
7.0
–
nC
VGS = 4.5V, VDS = 10V,
ID = 3.6A
Gate-Source Charge
Qgs
–
0.9
–
nC
Gate-Drain Charge
Qgd
–
1.4
–
nC
Turn-On Delay Time
tD(on)
–
7.4
–
ns
VDD = 10V, VGS = 4.5V,
RL = 2.78Ω, RG = 1.0Ω
Turn-On Rise Time
tr
–
9.8
–
ns
Turn-Off Delay Time
tD(off)
–
28.1
–
ns
Turn-Off Fall Time
tf
–
6.7
–
ns
Notes: 8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to production testing.
DMG2302UQ
Document number: DS38036 Rev. 1 - 2
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July 2015
© Diodes Incorporated
DMG2302UQ
0
2
4
6
8
10
0 0.5 1 1.5 2 2.5 3
Fig. 1 Typical Output Characteristics
V , DRAIN-SOURCE VOLTAGE (V)
DS
I , DRAIN CURRENT (A)
D
V = 1.2V
GS
V = 1.5V
GS
V = 2.0V
GS
V = 2.5V
GS
V = 3.0V
GS
V = 4.5V
GS
V = 8.0V
GS
0
2
4
6
8
10
0 0.5 1 1.5 2
Fig. 2 Typical Transfer Characteristics
V , GATE SOURCE VOLTAGE (V)
GS
I , DRAIN CURRENT (A)
D
V = 5V
DS
T = -55°C
A
T = 25°C
A
T = 125°C
A
T = 150°C
A
T = 85°C
A
0.02
0.025
0.03
0.035
0.04
0.045
0.05
0.055
0.06
0.1 1 10
Fig. 3 Typical On-Resistance
vs. Drain Current and Gate Voltage
I , DRAIN-SOURCE CURRENT (A)
D
R , DRAIN-SOURCE ON-RESISTANCE ( )
DS(ON)
V = 1.8V
GS
V = 4.5V
GS
V = 2.5V
GS
0.01
0.015
0.02
0.025
0.03
0.035
0.04
0.045
0.05
0.055
0.06
0 2 4 6 8 10
I , DRAIN CURRENT (A)
Fig. 4 Typical Drain-Source On-Resistance
vs. Drain Current and Temperature
D
R , DRAIN-SOURCE ON-RESISTANCE ( )
DS(ON)
V = 4.5V
GS
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
Fig. 5 On-Resistance Variation with Temperature
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE (°C)
J
0.6
0.8
1.0
1.2
1.4
1.6
1.8
R , DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
DS(ON)
V = 4.5V
I = 10A
GS
D
V = 2.5V
I = 5A
GS
D
Fig. 6 On-Resistance Variation with Temperature
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE (°C)
J
0
0.01
0.02
0.03
0.04
0.06
R , DRAIN-SOURCE ON-RESISTANCE ( )
DS(ON)
0.05
V = 4.5V
I = 10A
GS
D
V = 2.5V
I = 5A
GS
D
DMG2302UQ
Document number: DS38036 Rev. 1 - 2
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July 2015
© Diodes Incorporated
DMG2302UQ
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
A
0
0.2
0.4
0.6
0.8
1.0
1.4
V , GATE THRESHOLD VOLTAGE (V)
GS(TH)
1.2
I = 1mA
D
I = 250µA
D
0
2
4
6
8
10
0 0.2 0.4 0.6 0.8 1.0 1.2
V , SOURCE-DRAIN VOLTAGE (V)
SD
Fig. 8 Diode Forward Voltage vs. Current
I , SOURCE CURRENT (A)
S
T = 25°C
A
10
100
1,000
0 4 8 12 16 20
Fig. 9 Typical Capacitance
V , DRAIN-SOURCE VOLTAGE (V)
DS
C, CAPACITANCE (pF)
f = 1MHz
Ciss
Coss
Crss
Fig. 10 Typical Drain-Source Leakage Current
vs. Drain-Source Voltage
0 2 4 6 8 10 12 14 16 18 20
V , DRAIN-SOURCE VOLTAGE (V)
DS
0.1
1
10
100
1,000
10,000
I , DRAIN-SOURCE LEAKAGE CURRENT (nA)
DSS
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
Fig. 11 Transient Thermal Response
t , PULSE DURATION TIME (s)
1
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000
0.001
0.01
0.1
1
r(t), TRANSIENT THERMAL RESISTANCE
T - T = P * R (t)
Duty Cycle, D = t /t
J A JA
12
R (t) = r(t) *
JA R
R = 157°C/W
JA
JA
P(pk) t1
t2
D = 0.7
D = 0.5
D = 0.3
D = 0.05
D = 0.02
D = 0.01
D = 0.005
D = Single Pulse
D = 0.9
D = 0.1
DMG2302UQ
Document number: DS38036 Rev. 1 - 2
5 of 6
www.diodes.com
July 2015
© Diodes Incorporated
DMG2302UQ
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.
SOT23
Dim
Min
Max
Typ
A
0.37
0.51
0.40
B
1.20
1.40
1.30
C
2.30
2.50
2.40
D
0.89
1.03
0.915
F
0.45
0.60
0.535
G
1.78
2.05
1.83
H
2.80
3.00
2.90
J
0.013
0.10
0.05
K
0.890
1.00
0.975
K1
0.903
1.10
1.025
L
0.45
0.61
0.55
L1
0.25
0.55
0.40
M
0.085
0.150
0.110
8°
All Dimensions in mm
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
J
K1 K
L1
GAUGE PLANE
0.25
H
L
M
All 7°
A
CB
D
G
F
a
Dimensions
Value (in mm)
Z
2.9
X
0.8
Y
0.9
C
2.0
E
1.35
XE
Y
C
Z
DMG2302UQ
Document number: DS38036 Rev. 1 - 2
6 of 6
www.diodes.com
July 2015
© Diodes Incorporated
DMG2302UQ
IMPORTANT NOTICE
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INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
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