MMBF4119 - ON SEMICONDUCTOR

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MMBF4117 / MMBF4118 / MMBF4 119 — N-Channel Switch

MMBF4117 / MMBF4118 / MMBF4119 Rev. 1.4

February 2015

MMBF4117 / MMBF4118 / MMBF4119

N-Channel Switch

Ordering Information

Absolute Maximum Ratings(1), (2)

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-

ble above the re co mmen ded operating conditions and s tres si ng the parts to these level s i s not recommended. In addi-

tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The

absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.

Notes:

1. These ratings are based on a maximum junction temperature of 150°C.

2. These are steady-state limits. Fairchild Semiconductor should be consulted on applic ations involving pulsed or

low-duty-cycle operations.

Part Number Top Mark Package Packing Method

MMBF4117 61A SOT-23 3L Tape and Reel

MMBF4118 61C SOT-23 3L Tape and Reel

MMBF4119 61E SOT-23 3L Tape and Reel

Symbol Parameter Value Unit

VDG Drain-Gate Voltage 40 V

VGS Gate-Source Voltage -40 V

IGF Forward Gate Current 50 mA

TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 °C

Description

This device is designed for low current DC and audio

applications. These devices provide excellent perfor-

mance as input stages for sub-picoamp instrumenta-

tion or any high impedance signal sources. Sourced

from proc ess 53. SOT-23

Note: Sourc e & Dr ain

are interchangeable

MMBF4117 / MMBF4118 / MMBF4 119 — N-Channel Switch

MMBF4117 / MMBF4118 / MMBF4119 Rev. 1.4 2

Thermal Characteristics(3)

Values are at TA = 25°C unless otherwise noted.

Note:

3. Device mounted on FR-4 PCB 1.6 inch X 1.6 inch X 0.06 inch.

Electrical Characteristics

Values are at TA = 25°C unless otherwise noted.

Note:

4. Pulse test: pulse width ≤ 300 μs, duty cycle ≤ 1.0%

Symbol Parameter Max. Unit

PDTotal Device Dissipation 225 mW

Derate Above 25°C1.8mW/°C

RθJA Thermal Resistance, Junction-to-Ambient 556 °C/W

Symbol Parameter Conditions Min. Max. Unit

Off Characteristics

V(BR)GSS Gate-Source Breakdown Voltage IG = -1.0 μA, VDS = 0 -40 V

IGSS Gate Reverse Current VGS = -20 V, VDS = 0 -10 pA

VGS = -20 V, VDS = 0, TA = 150°C -25 nA

VGS(off) Gate-Source Cut-Off Voltage VDS = -10 V, ID = 1.0 nA MMBF4117 -0.6 -1.8 VMMBF4118 -1.0 -3.0

MMBF4119 -2.0 -6.0

On Characteristics

IDSS Zero-Gate Voltage Drain

Current(4) VDS = 10 V, VGS = 0 MMBF4117 30 90

μAMMBF4118 80 240

MMBF4119 200 600

Small Signal Characteristics

gfs Common-Source Forward

Transconductance VDS = 10 V, VGS = 0,

f = 1.0 kHz

MMBF4117 70 210

μmhosMMBF4118 80 250

MMBF4119 100 330

goss Common-Source Output

Conductance VDS = 10 V, VGS = 0,

f = 1.0 kHz

MMBF4117 3.0

μmhosMMBF4118 5.0

MMBF4119 10.0

Re(yfs) Common-Source Forward

Transconductance VDS = 10 V, VGS = 0,

f = 30 MHz

MMBF4117 60

μmhosMMBF4118 70

MMBF4119 90

Ciss Input Capacitance VDS = 10 V, VGS = 0, f = 1.0 kHz 3.0 pF

Crss Reverse Transfer Capacitance VDS = 10 V, VGS = 0, f = 1.0 MHz 1.5 pF

MMBF4117 / MMBF4118 / MMBF4 119 — N-Channel Switch

MMBF4117 / MMBF4118 / MMBF4119 Rev. 1.4 3

Typical Performance Characteristics

Figure 1. Parameter Interactions Figure 2. Transfer Characteristics

Figure 3. Transfer Characteristics Figure 4. Transfer Characteristics

Figure 5. Transfer Characteristics Figure 6. Transfer Characteristics

MMBF4117 / MMBF4118 / MMBF4 119 — N-Channel Switch

MMBF4117 / MMBF4118 / MMBF4119 Rev. 1.4 4

Typical Performance Characteristics (Continued)

Figure 7. Leakage Current vs. Voltage Figure 8. Common Drain-Source

Figure 9. Output Conductance vs. Drain Current Figure 10. Conductance vs. Voltage

Figure 11. Transconductance vs. Drain Current Figure 12. Noise Voltage vs. Frequency

MMBF4117 / MMBF4118 / MMBF4 119 — N-Channel Switch

MMBF4117 / MMBF4118 / MMBF4119 Rev. 1.4 5

Physical Dimensions

Figure 13. 3-LEAD, SOT23, JEDEC TO-236, LOW PROFILE

LAND PATTERN

RECOMMENDATION

NOTES: UNLESS OTHERWISE SPECIFIED

A) REFERENCE JEDEC REGISTRATION

TO-236, VARIATION AB, ISSUE H.

B) ALL DIMENSIONS ARE IN MILLIMETERS.

C) DIMENSIONS ARE INCLUSIVE OF BURRS,

MOLD FLASH AND TIE BAR EXTRUSIONS.

D) DIMENSIONING AND TOLERANCING PER

ASME Y14.5M - 1994.

E) DRAWING FILE NAME: MA03DREV10

SEE DETAIL A

SEATING

PLANE

SCALE: 2X

GAGE PLANE

(0.55)

(0.93)

1.20 MAX

0.10

0.00

0.10 C

2.40±0.30

2.92±0.20

1.30+0.20

-0.15

0.60

0.37

0.20 A B

1.90

0.95

(0.29)

0.95

1.40

2.20

1.00

1.90

0.25

0.23

0.08

0.20 MIN

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Rev. I73

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regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or

specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer

application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not

designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification

in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized

application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and

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