QSB363C — Subminiature Plastic Silicon Infrared Phototransistor
©2011 Fairchild Semiconductor Corporation www.fairchildsemi.com
QSB363C Rev. 1.0.3
March 2011
QSB363C
Subminiature Plastic Silicon Infrared Phototransistor
Features
■
NPN Silicon Phototransistor
■
T-3/4 (2mm) Surface Mount Package
■
Medium Wide Beam Angle, 24°
■
Clear Plastic Package
■
Matched Emitters: QEB363 or QEB373
■
Tape & Reel Option (See Tape & Reel Specifications)
■
Lead Form Options: Gullwing, Yoke, Z-Bend
Description
The QSB363 is a silicon phototransistor encapsulated in
a clear infrared T-3/4 package.
Package Dimensions
0.074 (1.9)
0.008 (0.21)
0.004 (0.11) 0.106 (2.7)
0.091 (2.3)
0.055 (1.4)
0.024 (0.6)
0.016 (0.4)
0.087 (2.2)
0.071 (1.8)
0.019 (0.5)
0.012 (0.3)
0.276 (7.0)
MIN
0.024 (0.6)
.059 (1.5)
.051 (1.3)
.118 (3.0)
.102 (2.6)
EMITTER
NOTES:
1. Dimensions are in inches (mm).
2. Tolerance of ± .010 (.25) on all non nominal dimensions
unless otherwise specified.
Schematic
EMITTER
COLLECTOR
©2011 Fairchild Semiconductor Corporation www.fairchildsemi.com
QSB363C Rev. 1.0.3 2
QSB363C — Subminiature Plastic Silicon Infrared Phototransistor
Absolute Maximum Ratings
(T
A
= 25°C unless otherwise specified)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
)
Notes
1. Derate power dissipation linearly 1.33mW/°C above 25°C.
2. RMA flux is recommended.
3. Methanol or isopropyl alcohols are recommended as cleaning agents.
4. Pulse conditions: tp = 100µs, T = 10ms.
5. D = 940nm, GaAs.
Electrical/Optical Characteristics
(T
A
= 25°C)
Symbol Parameter Rating Unit
T
OPR
Operating Temperature -25 to +85 °C
T
STG
Storage Temperature -40 to +85 °C
T
SOL
Soldering Temperature (Iron)
(2,3,4)
260 °C
T
SOL
Soldering Temperature (Flow)
(2,3)
260 °C
V
CEO
Collector Emitter Voltage 30 V
V
ECO
Emitter Collector Voltage 5 V
P
C
Power Dissipation
(1)
75 mW
Symbol Parameters Test Conditions Min. Typ. Max. Units
λ
P
Peak Sensitivity Wavelength 940 nm
Θ
Reception Angle ±12
I
CEO
Collector Dark Current V
CE
= 20V, Ee = 0mW/cm
2
100 nA
BV
CEO
Collector-Emitter Breakdown Voltage I
C
= 100µA, Ee = 0mW/cm
2
30 V
BV
ECO
Emitter-Collector Breakdown Voltage I
E
= 100µA, Ee = 0mW/cm
2
5V
I
C(on)
On-State Collector Current V
CE
= 5V, Ee = 0.5mW/cm
2
1.0 1.5 mA
V
CE (SAT)
Collector-Emitter Saturation Voltage I
C
= 2mA, Ee = 1mW/cm
2
0.4 V
t
r
t
f
Rise Time
Fall Time
V
CE
= 5 V, I
C
= 1mA,
R
L
= 1000
Ω
15
15
µs
µs
©2011 Fairchild Semiconductor Corporation www.fairchildsemi.com
QSB363C Rev. 1.0.3 3
QSB363C — Subminiature Plastic Silicon Infrared Phototransistor
Typical Performance Curves
Collector Dark Current ICEO (A)
Ambient Temperature (°C)
10
-10
10
-9
10
-8
10
-7
10
-6
5
2
5
2
5
2
5
2
025 50 75 100
Fig. 5 Collector Dark Current vs.
Ambient Temperature
100
80
60
40
20
0
-25
025
50 75 85 100
Ambient Temperature T
A
(˚C) Wavelength λ (nm)
Fig. 1 Collector Power Dissipation vs.
Ambient Temperature
Collector Power
Dissipation Pd (mW)
Fig. 3 Relative Collector Current vs.
Ambient Temperature
Relative Collector Current (%)
Ambient Temperature T
A
(˚C)
0
20
40
60
80
100
010 20 30 40 50 60 70
120
140
160
V
CE
= 5 V
Ee = 1 mW/cm
2
14
12
10
8
6
4
2
0
01234
Collector Current I
C
(mA)
Collector Emitter Voltage VCE (V)
Fig. 6 Collector Current vs.
Collector Emitter Voltage
Fig. 4 Collector Current vs.
Irradiance
Collector Current I
C
(mA)
Irradiance E
e
(mW/cm
2
)
0.01 0.1 110
0.001
0.01
0.1
1
10 V
CE
= 5 V
T
A
= 25˚C
Fig. 2 Spectral Sensitivity
0
0.2
0.4
0.6
0.8
1.0
Relative Spectral Sensitivity
100 300 500 700 900 1100 1300
V
Ee=1.50mW/cm
2
Ee=1.25mW/cm
2
Ee=1.0mW/cm
2
Ee=0.75mW/cm
2
Ee=0.5mW/cm
2
CE
= 20 V
T
A
= 25˚C
©2011 Fairchild Semiconductor Corporation www.fairchildsemi.com
QSB363C Rev. 1.0.3 4
QSB363C — Subminiature Plastic Silicon Infrared Phototransistor
Package Dimensions
Features
■
Three lead forming options: Gull Wing, Yoke and Z-Bend
■
Compatible with automatic placement equipment
■
Supplied on tape and reel or in bulk packaging
■
Compatible with vapor phase reflow solder processes
Gull Wing Lead Configuration Z-Bend Lead Configuration
0.098±0.004
(2.5±0.1)
Emitter
0.157±0.008
(4.0±0.2)
0.043±0.008
(1.1±0.2)
0.055±0.008
(1.4±0.2)
0.012±0.004
(0.3±0.1)
0.029±0.004
(0.75±0.1)
R0.031±.004
(0.8±0.1)
(0.83 )
+0.13
–0
0.032 +0.005
–0
C
L
C
L
0.020±0.004
(0.5±0.1)
0.006±0.002
(0.15±0.05)
0.016±0.004
(0.4±0.1)
0.079±0.008
(2.0±0.2)
0.106±0.008
(2.7±0.2)
0.055±0.004
(1.4±0.1)
0.051±0.004
(1.3±0.1)
0.025±0.004
(0.65±0.1)
ø0.075±0.008
(ø1.9±0.2)
(0.6 )
+0.13
–0
0.023 +0.005
–0
0.098±0.004
(2.5±0.1)
0.043±0.008
(1.1±0.2)
0.055±0.008
(1.4±0.2)
0.12±0.008
(3.05±0.2)
0.169±0.008 (4.3±0.2)
0.228±0.008 (5.8±0.2) 0.029±0.004
(0.75±0.1)
R0.031±.004
(0.8±0.1)
C
L
C
L
0.020±0.004
(0.5±0.1)
0.006±0.002
(0.15±0.05)
0.016±0.004
(0.4±0.1)
0.079±0.008
(2.0±0.2)
0.106±0.008
(2.7±0.2)
0.055±0.004
(1.4±0.1)
0.051±0.004
(1.3±0.1)
0.025±0.004
(0.65±0.1)
ø0.075±0.008
(1.9±0.2)
Emitter
Yoke Lead Configuration
0.098±0.004
(2.5±0.1)
0.043±0.008
(1.1±0.2)
0.055±0.008
(1.4±0.2)
0.185±0.008 (4.7±0.2)
0.291±0.008 (7.4±0.2)
0.029±0.004
(0.75±0.1)
R0.031±.004
(0.8±0.1)
R0.016±.004
(0.4±0.1)
C
L
C
L
0.020±0.004
(0.5±0.1)
0.006±0.002
(0.15±0.05)
0.016±0.004
(0.4±0.1)
0.079±0.008
(2.0±0.2)
0.106±0.008
(2.7±0.2)
0.055±0.004
(1.4±0.1)
0.051±0.004
(1.3±0.1)
0.025±0.004
(0.65±0.1)
ø0.075±0.008
(1.9±0.2)
Emitter
©2011 Fairchild Semiconductor Corporation www.fairchildsemi.com
QSB363C Rev. 1.0.3 5
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Rev. I51
QSB363C — Subminiature Plastic Silicon Infrared Phototransistor
