Single Diode Super Fast Recovery Diode Msi OUTLINE D2FK60 Package : 2F Unit!mm Weight 0.16g(Typ) tyY-EeF7 600V 1 5A / Cathode mark | Yon | wx s (be e/\ZSMD Small SMD N > | *SmEz High Voltage | \ trr=75ns trr-75ns hn ea EA tyb Ads (fal) {VF=1.3V Low Vr=1.3V Type Dis: * Giese Datecode _ e24vF/I98RR Switching Regulator a + DC/DCAYN\ DC/DC Converter a eo X.0A Home Appliance, Office Automation ( | ! Fp ems Communication 737mhIL Fly Wheel GIB LOU TIL Webt 4 b MIS CRAKE Re) & COBH Favs, lOve RAL CHR F Se For details of the outline dimensions, refer to our web site or Semiconductor Short Form Catalog. As for the marking, refer to the specification "Marking, Terminal Connection". MewX RATINGS @MxtRAZH Absolute Maximum Ratings Gh#eoOez ie TI=25C) H ae | 2 ff ih BLA, Item Symbol] Conditions Type No. D2FK60 Unit Bete ia a ; Storage Temperature Tstg 55~ 150 Cc Tey bike : 5 Operation Junction Temperature Tj 150 Cc +f A SEE 7 Maximum Reverse Voltage Va 600 V Tr=101T 15 th J ati I 5OHz EG, BE a pa=30C FY FE 11 A Average Rectified Forward Current 0 50Hz sine wave, Resistance load a On alumina substrate z + cory 7 & bE Ta=28 On glass-epoxy substrate 0.9 tt AL 2 MT RE i 50Hz ksh, SHAR OR LAAT 2 eat AA, Ti = 250 40 A Peak Surge Forward Current M 50Hz sine wave, Non-repetitive 1 cycle peak value, T)=25C OBA - RAH Electrical Characteristics GH#Oe VHA TI=25T) RCL -=15 Ol AE Forward Voltage Vr Ir =15A, Pulse measurement MAX 1.3 V sui it To = VY. a0 Ai se Reverse Current Tr Vr= Veo, Pulse measurement MAX 10 HA Fee covery Time trr | Ir=0.5A, I= 1.0A, 0.25Ik MAX 75 ns feet . ~1MH- -1nV ae Capacitance Cj f= 1MHz, Ve= 10V TYP 16 pF : EA: FY Ail | Sunction to lead MAX 24 SL TS THEME fl Thermal Resistance * 4-6 - EEL) On alumina substrate MAX 90 c/w Bia Junction to ambient Ti) > ba MAX 120 On glass-epoxy substrate 5 168 = (J532-1) www.shindengen.co.jp/product/semilSmall SMD Super FRD (Single) D2FK60 Mist CHARACTERISTIC DIAGRAMS NGF Ta et Forward Voltage Ti= 1S7C(MAN)} + T= IC (TYP) = Ti= 29C(MAX) + TH= 25C(TYP) Forward Current Ir (A) [Pulse measurement] Forward Voltage Vr (V] NEF 7798 thee Forward Power Dissipation Forward Power Dissipation Pr (W) Average Rectified Forward Current lo (A) AR Y IBt m Peak Surge Forward Current Capability Sine wave A) WOms 10ms' Toyele eet") Non-repetit |Tj=25C Peak Surge Forward Current Ivsm CA) Number of Cycles [cycle] FaAlLF4AyINT Trlo pL Derating Curve Ti-lo TL Ve mo ' Vr=Vew a | D=1p/T a] ze Average Rectified Forward Current fo [A) Lead Temperature Ti (C) F4LF4YINT Ta-lo Derating Curve Ta-lo Average Rectified Forward Current fo [A] Ambient Temperature Ta [C] F4lF4vINT Ta-lo Derating Curve Ta-lo aL Va es | Vr = Vem : ee 4 D=1p/T (On glass-epoxy substrate Average Rectified Forward Current lo [A] Ambient Temperature Ta (C) Hea Junction Capacitance f= [MHz THC Junction Capacitance Cj (pF) Reverse Voltage Vr (V] * Sine wave (50Hz THE LTV ET, * 50Hz sine wave is used for measurements. PRETO TES MAIL eae TEHET. Typical SHANKS RL ET * Semiconductor products generally have characteristic variation. Typical is a statistical average of the device's ability. www.shindengen.co.jp/product/semil (J532-1) 169