DATA SH EET
Product specification
Supersedes data of September 1995
File under Discrete Semiconductors, SC14
1998 Aug 27
DISCRETE SEMICONDUCTORS
BFQ67
NPN 8 GHz wideband transistor
b
ook, halfpage
M3D088
1998 Aug 27 2
Philips Semiconductors Product specification
NPN 8 GHz wideband transistor BFQ67
FEATURES
•High power gain
•Low noise figure
•High transition frequency
•Gold metallization ensures
excellent reliability.
APPLICATIONS
Satellite TV tuners and RF portable
communications equipment up to
2 GHz.
DESCRIPTION
Silicon NPN wideband transistor in a
plastic SOT23 package.
PINNING
PIN DESCRIPTION
1 base
2 emitter
3 collector
Fig.1 SOT23.
al
fpage
MSB003
Top view
12
3
Marking code: V2p.
QUICK REFERENCE DATA
Note
1. Ts is the temperature at the soldering point of the collector tab.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Ts is the temperature at the soldering point of the collector tab.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
VCBO collector-base voltage open emitter −−20 V
VCEO collector-emitter voltage open base −−10 V
ICcollector current (DC) −−50 mA
Ptot total power dissipation Ts≤97 °C; note 1 −−300 mW
hFE DC current gain IC= 15 mA; VCE = 5 V 60 100 −
fTtransition frequency IC= 15 mA; VCE =8V −8−GHz
GUM maximum unilateral
power gain IC= 15 mA; VCE = 8 V; f = 1 GHz −14 −dB
F noise figure IC= 5 mA; VCE = 8 V; f = 1 GHz −1.3 −dB
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter −20 V
VCEO collector-emitter voltage open base −10 V
VEBO emitter-base voltage open collector −2.5 V
ICcollector current (DC) −50 mA
Ptot total power dissipation Ts≤97 °C; note 1 −300 mW
Tstg storage temperature range −65 +150 °C
Tjjunction temperature −175 °C
1998 Aug 27 3
Philips Semiconductors Product specification
NPN 8 GHz wideband transistor BFQ67
THERMAL CHARACTERISTICS
Note
1. Ts is the temperature at the soldering point of the collector lead.
CHARACTERISTICS
Tj=25°C unless otherwise specified.
Note
1. GUM is the maximum unilateral power gain, assuming S12 is zero and .
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-s thermal resistance from junction to soldering point note 1 260 K/W
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
ICBO collector cut-off current IE= 0; VCB =5V −−50 nA
hFE DC current gain IC= 15 mA; VCE = 5 V 60 100 −
Cccollector capacitance IE=i
e= 0; VCB = 8 V; f = 1 MHz −0.7 −pF
Ceemitter capacitance IC=i
c= 0; VEB = 0.5 V; f = 1 MHz −1.3 −pF
Cre feedback capacitance IC= 0; VCB = 8 V; f = 1 MHz −0.5 −pF
fTtransition frequency IC= 15 mA; VCE =8V −8−GHz
GUM maximum unilateral power gain
(note 1) IC= 15 mA; VCE =8V;
T
amb =25°C; f = 1 GHz −14 −dB
IC= 15 mA; VCE =8V; f=2GHz −8−dB
F noise figure Γs=Γopt; IC= 5 mA; VCE =8V;
T
amb =25°C; f = 1 GHz −1.3 −dB
Γs=Γopt; IC= 15 mA; VCE =8V;
T
amb =25°C; f = 1 GHz −1.7 −dB
Γs=Γopt; IC= 5 mA; VCE =8V;
T
amb =25°C; f = 2 GHz −2.2 −dB
IC= 5 mA; VCE =8V;
T
amb =25°C; f = 2 GHz; Zs=60Ω−2.5 −dB
Γs=Γopt; IC= 15 mA; VCE =8V;
T
amb =25°C; f = 2 GHz −2.7 −dB
IC= 15 mA; VCE =8V;
T
amb =25°C; f = 2 GHz; Zs=60Ω−3−dB
GUM 10 log
S
21 2
1
S
11 2
–
1
S
22 2
–
-------------------------------------------------------------- dB=
1998 Aug 27 4
Philips Semiconductors Product specification
NPN 8 GHz wideband transistor BFQ67
Fig.2 Power derating curve.
handbook, halfpage
0 50 100 200
400
300
100
0
200
150
MRA614
Ptot
(mW)
Ts (oC)
Fig.3 DC current gain as a function of collector
current, typical values.
VCE =5V.
handbook, halfpage
0
120
80
40
020 40
MBB301
60
I (mA)
C
FE
h
Fig.4 Feedback capacitance as a function of
collector-base voltage, typical values.
IC=i
c= 0; f = 1 MHz.
handbook, halfpage
0 5 10 15
VCB (V)
Cre
(pF)
0.8
0.6
0.2
0
0.4
MRA607
Fig.5 Transition frequency as a function of
collector current, typical values.
VCE = 8 V; Tamb =25°C; f = 2 GHz.
handbook, halfpage
01020 40
8
6
2
0
4
MBB303
30 I (mA)
C
(GHz)
T
f10
1998 Aug 27 5
Philips Semiconductors Product specification
NPN 8 GHz wideband transistor BFQ67
Fig.6 Gain as a function of collector current,
typical values.
VCE = 8 V; f = 1 GHz.
handbook, halfpage
010 I
C
(mA)
20 30
25
0
20
15
gain
(dB)
10
5
MRA611
MSG
GUM
Gmax
Fig.7 Gain as a function of frequency, typical
values.
VCE = 8 V; IC= 5 mA.
handbook, halfpage
50
gain
(dB)
010
MRA610
102103104
10
20
30
f (MHz)
40
MSG
GUM
Gmax
Fig.8 Gain as a function of frequency, typical
values.
VCE = 8 V; IC=15mA.
handbook, halfpage
50
gain
(dB)
010
MRA608
102103104
10
20
30
f (MHz)
40
Gmax
GUM
MSG
Fig.9 Gain as a function of frequency, typical
values.
VCE = 8 V; IC=30mA.
handbook, halfpage
50
gain
(dB)
010
MRA609
102103104
10
20
30
f (MHz)
40
Gmax
GUM
MSG
1998 Aug 27 6
Philips Semiconductors Product specification
NPN 8 GHz wideband transistor BFQ67
Fig.10 Minimum noise figure as a function of
collector current, typical values.
VCE =8V.
handbook, halfpage
4
2
1
0100
MBB308
101
3
F
(dB)
I (mA)
C
f = 2 GHz
1 GHz
900 MHz
500 MHz
Fig.11 Noise figure as a function of collector
current, typical values.
VCE = 6 V; f = 900 MHz.
handbook, halfpage
5
0
1
2
3
F
(dB)
IC (mA)
4
MRA613
1102
10
optimum
source
ZS = 60 Ω
Fig.12 Minimum noise figure as a function of
frequency, typical values.
VCE =8V.
handbook, halfpage
4
2
1
0
MBB309
3
F
(dB)
f (MHz) 104
103
102
5 mA
I = 30 mA
C
15 mA
Fig.13 Minimum noise figure as a function of
frequency, typical values.
VCE =1V.
handbook, halfpage
5
0
1
2
3
F
(dB)
f (MHz)
4
MRA612
102104
103
IC = 0.5 mA
1 mA
2 mA
1998 Aug 27 7
Philips Semiconductors Product specification
NPN 8 GHz wideband transistor BFQ67
handbook, full pagewidth
MBC968
0.2
0.5
1
2
5
10
∞
0.2
0.5
1
2
5
10
0
+ j
− j
3 GHz
40 MHz
10.2 5210
Fig.14 Common emitter input reflection coefficient (S11), typical values.
VCE = 8 V; IC= 15 mA; Zo=50Ω.
Fig.15 Common emitter forward transmission coefficient (S21), typical values.
VCE = 8 V; IC=15mA.
handbook, full pagewidth
MBC967
+ ϕ
− ϕ
0°
30°
60°
90°
120°
150°
180°
150°
120°
90°
60°
30°
0.2 0.1 3 GHz
40 MHz
1998 Aug 27 8
Philips Semiconductors Product specification
NPN 8 GHz wideband transistor BFQ67
Fig.16 Common emitter reverse transmission coefficient (S12), typical values.
VCE = 8 V; IC= 15 mA.
handbook, full pagewidth
MBC966
+ ϕ
− ϕ
0°
30o
60°
90°
120°
150°
180°
150°
120°
90°
60°
30°
0.2 0.1
3 GHz
40 MHz
Fig.17 Common emitter output reflection coefficient (S22), typical values.
VCE = 8 V; IC= 15 mA; Zo=50Ω.
handbook, full pagewidth
MBC965
0.2
0.5
1
2
5
10
∞
0.2
0.5
1
2
5
10
0
+ j
− j 3 GHz
0.2 0.5 1 1052
40 MHz
1998 Aug 27 9
Philips Semiconductors Product specification
NPN 8 GHz wideband transistor BFQ67
PACKAGE OUTLINE
UNIT A1
max. bpcDE e1HELpQwv
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
97-02-28
IEC JEDEC EIAJ
mm 0.1 0.48
0.38 0.15
0.09 3.0
2.8 1.4
1.2 0.95
e
1.9 2.5
2.1 0.55
0.45 0.1
0.2
DIMENSIONS (mm are the original dimensions)
0.45
0.15
SOT23
bp
D
e1
e
A
A1
Lp
Q
detail X
HE
E
wM
vMA
B
AB
0 1 2 mm
scale
A
1.1
0.9
c
X
12
3
Plastic surface mounted package; 3 leads SOT23
1998 Aug 27 10
Philips Semiconductors Product specification
NPN 8 GHz wideband transistor BFQ67
DEFINITIONS
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
Data Sheet Status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
1998 Aug 27 11
Philips Semiconductors Product specification
NPN 8 GHz wideband transistor BFQ67
NOTES
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Philips Semiconductors – a worldwide company
© Philips Electronics N.V. 1998 SCA60
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Printed in The Netherlands 125104/00/04/pp12 Date of release: 1998 Aug 27 Document order number: 9397 750 04295
