MSD52
MSD52-Rev 1 www.microsemi.com
Dec, 2009 1/3
Module Type
TYPE VRRM VRSM
MSD52 – 08
MSD52 – 12
MSD52 – 16
MSD52 – 18
800V
1200V
1600V
1800V
900V
1300V
1700V
1900V
Maximum Ra tings
Symbol Conditions Values Units
ID Tc=110℃ 50 A
IFSM t=10mS Tv
j
=45℃460 A
i2t t=10mS Tv
j
=45℃1050 A2s
Visol a.c.50Hz;r.m.s.;1min 3000 V
Tvj -40 to 150 ℃
Tstg -40 to 125 ℃
Mt To terminals(M5) 5±15% Nm
Ms To heatsink(M5) 5±15% Nm
Weight Module 135 g
Thermal Charac teristics
Symbol Conditions Values Units
Rth(j-c) Per diode 1.45 ℃
/
W
Rth(c-s) Module 0.07
℃
/
W
Electrical Characteristics
Circuit
Glass Passivated Three
Phase Rectifier Bridge
VRRM 800 to 1800V
ID 50 Amp
Features
y Three phase bridge rectifier
y Blocking voltage: 800 to 1800V
y Heat transfer through aluminum oxide DCB
ceramic isolated metal baseplate
y Glass passivated chip
Applications
y Three phase rectifiers for power supplies
y Rectifiers for DC motor field supplies
y Battery charger rectifiers
yIn
p
ut rectifiers for variable fre
q
uenc
y
drives
-
+
~
~
~
MSD
Symbol Conditions Values Units
VFM T=25℃ IFM =150A 1.8 V
IRD Tvj =25℃ VRD=VRRM
Tvj =150℃ VRD=VRRM
≤0.3
≤5
mA
mA
MSD52
MSD52-Rev 1 www.microsemi.com
Dec, 2009 2/3
Performance Curves
Fig1. Forward Characteristics
Fig3. Transient thermal impedance
Fi
g
2. Power dissi
p
ation
Fig4. Max Non-Repetitive Forward Surge
Current
Fig5.Forward Current Derating Curve
Typ.
25℃
125℃
Zth(j-C
200
A
150
100
50
IF
0
0 VF 0.5 1.0 1.5 2.0 V
1 10 cycles 100
600
A
400
200
0
0 Tc 50 100 150 °C
ID
100
A
80
60
0
40
20
0.001 0.01 0.1 1 10 100 S
1.5
1.0
0.5
0
2.0
℃
/W
50Hz
W
0
120
60
Pvtot
0 ID 25 50 A
MSD52
MSD52-Rev 1 www.microsemi.com
Dec, 2009 3/3
Package Outline Information
CASE-M2
Dimensions in mm
