Features
l
TO-8 style 5-pin package
S7516 : flat glass window
S7516-01: lens window
l
Large active area
S7516 :
f
3 mm
S7516-01:
f
9 mm (lens)
l
Wide bandwidth: fc=170 MHz (R
L
=50
W
)
fc=200 MHz (R
L
=500
W
)
Applications
l
Spatial light transmission, etc.
PHOTODIODE
Si PIN photodiode with preamp
Wide band detector for spatial light transmission
S7516 series
S7516 series is a Si PIN photodiode incorporating a wide band preamplifier chip, hermetically sealed in a TO-8 package. The photodiode has a
large active area (
f
3 mm) yet offers a wide bandwidth, making S7516 series suitable for spatial light transmission. A lens (
f
9 mm) window type
(S7516-01) is also available.
■ Absolute maximum ratings (Ta=25 °C)
Parameter Symbol Value Unit
Power suppl
y
(
for Op amp
)
Vcc ±6 V
Reverse voltage (for photodiode) VR50 V
Operating temperature Topr -30 to +60 °C
Storage temperature Tstg -40 to +80 °C
■ Electrical and optical characteristics (Ta=25 °C, Vcc=±5 V, V4=30 V)
S7516 S7516-01
Parameter Symbol Condition Min. Typ. Max. Min. Typ. Max. Unit
Spectral response range l-320 to
1060 --
320 to
1060 -nm
Peak sensitivity wavelength lp-840 - - 840 -nm
l=lp, RL=50 W-88- -84-
Photo sensitivity S l=lp, RL=500 W-160- -154- V/W
-3 dB, RL=50 W140 170 -140 170 -
Cut-off frequency fc -3 dB, RL=500 W160 200 -160 200 -MHz
Dark state, f=170 MHz, RL=50 9-9- -9-
Dark state, f=200 MHz, RL=500 9-15- -15- nV/Hz1/2
Dark state, f=100 kHz~170 MHz, RL=50 9-130- -130-
Output noise voltage Vn
Dark state, f=100 kHz~200 MHz, RL=500 9-240- -240- µVrms
f=170 MHz, RL=50 W-0.16 - - 0.16 -
Noise equivalent power NEP f=200 MHz, RL=500 W-0.13 - - 0.13 -nWrms/Hz1/2
Power supply current Is Dark state - 5 15 - 5 15 mA
● ESD
S7516 series may be damaged or their performance may deteriorate by such factors as electro static discharge from the human body,
surge voltages from measurement equipment, leakage voltages from soldering irons and packing materials, etc. As a countermeasure
against electro static discharge, the device, operator, work place and measuring jigs must all be set at the same potential. The following
precautions must be observed during use:
· To protect the device from electro static discharge which accumulate on the operator or the operator's clothes, use a wrist strap or similar
tools to ground the operator's body via a high impedance resistor (1 MΩ).
· A semiconductive sheet (1 MΩ to 100 MΩ) should be laid on both the work table and the floor in the work area.
· When soldering, use an electrically grounded soldering iron with an isolation resistance of more than 10 MΩ.
· For containers and packing, use of a conductive material or aluminum foil is effective. When using an antistatic material, use one with a
resistance of 0.1 MΩ/cm2 to 1 GΩ/cm2.
● Wiring
If electric current or voltage is applied in reverse polarity to an electronic device such as a preamplifier, this can degrade device performance
or destroy the device. Always check the wiring and dimensional outline to avoid misconnection.
Precautions for use
1
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: (81) 053-434-3311, Fax: (81) 053-434-5184, http://www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2003 Hamamatsu Photonics K.K.
Si PIN photodiode with preamp
S7516 series
Cat. No. KPIN1037E05
Feb. 2003 DN
LENS
9.0
14.0 ± 0.2
7.0
15.6 ± 0.3
1.2 MAX.
(3.3)
0.5 MAX.
4.2
10.16 ± 0.2
10.16 ± 0.2
OUT
Vcc-
GND
PD (CATHODE)
Vcc+
0.75
LEAD
5.1 ± 0.3
2.54 ± 0.2
PHOTOSENSITIVE
SURFACE
■ NEP characteristics■ Spectral response
FREQUENCY
RELATIVE OUTPUT (dB)
5
0
-5
-10
-15
-20
100 kHz 1 MHz 10 MHz 100 MHz 1 GHz
(Typ. Ta=25 ˚C, Vcc=±5 V, V
R
=30 V)
R
L
=500 Ω
R
L
=50 Ω
■ Frequency response
10
-11
100 kHz 1 MHz 10 MHz
FREQUENCY
100 MHz 1 GH
z
10
-10
10
-9
10
-8
(Typ. Ta=25 ˚C, Vcc=±5 V, V
R
=30 V)
R
L
=500 Ω
R
L
=50 Ω
NEP (Wrms/Hz
)
1
2
■ Dimensional outlines (unit: mm)
KPINA0057EA
■ Equivalent circuit
0
100 kHz 1 MHz 10 MHz
FREQUENCY
100 MHz 1 GHz
10
20
OUTPUT NOISE VOLTAGE (nV/Hz
1/2
)
30 (Typ. Ta=25 ˚C, Vcc=±5 V, VR=30 V)
RL=500 Ω
RL=50 Ω
■ Output noise voltage
characteristics
KPINB0120EC KPINB0202EA
■ Output noise integration
characteristics
KPINC0013EA
WAVELENGTH (nm)
PHOTO SENSITIVITY (V/W)
300
0
40
60
100
140
120
80
20
160
180
500 700 900 1100
(Typ. Ta=25 ˚C, Vcc=±5 V, V
R
=30 V)
S7516
(R
L
=50 Ω)
S7516 (R
L
=500 Ω)
S7516-01 (R
L
=500 Ω)
S7516-01
(R
L
=50 Ω)
FREQUENCY
OUTPUT NOISE INTEGRATION (µVrms)
100 kHz 1 MHz 10 MHz 100 MHz 1 GHz
(Typ. Ta=25 ˚C, Vcc=±5 V, VR=30 V)
0
50
100
150
250
300
200
RL=500 Ω
RL=50 Ω
Vcc+
PACKAGE
0.1 µF
Vcc-GNDPD (K)
0.1 µF
0.1 µF
68 Ω
470 Ω
51 Ω
OUT
39 Ω
-
+
WINDOW
10.0 ± 0.1
14.0 ± 0.2
5.1 ± 0.3
15.6 ± 0.3
1.2 MAX.
(3.3)
0.5 MAX.
4.2
10.16 ± 0.2
10.16 ± 0.2
OUT
Vcc-
GND
PD (CATHODE)
Vcc+
The glass window may extend
a maximum of 0.3 mm beyond
the upper surface of the cap.
0.75
LEAD
2.54 ± 0.2
PHOTOSENSITIVE
SURFACE
KPINA0064EA
KPINB0201EB KPINB0127EB KPINB0119EC
S7516 S7516-01
■ Sensitivity uniformity
60
40
20
-6 -4 -2 0 2 4 6
RELATIVE SENSITIVITY (%)
POSITION ON ACTIVE AREA (mm)
(Typ. Ta=25 ˚C, spot light size= 500 µm)
0
120
100
80
S7516
S7516-01
KPINB0237EA
2
