VS-SA61BA60 - Vishay Presicion Group

VS-SA61BA60

www.vishay.com Vishay Semiconductors

Revision: 29-Feb-12 1Document Number: 94688

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Single Phase Fast Recovery Bridge (Power Modules), 61 A

FEATURES

• Fast recovery time characteristic

• Electrically isolated base plate

• Simplified mechanical designs, rapid assembly

• UL pending

• Excellent power/volume ratio

• Compliant to RoHS Directive 2011/65/EU

• Designed and qualified for industrial and consumer level

DESCRIPTION

The semiconductor in the SOT-227 package is isolated from

the copper base plate, allowing for common heatsinks and

compact assemblies to be built.

ELECTRICAL SPECIFICATIONS

PRODUCT SUMMARY

IT(AV) 61 A

Type Modules - Bridge, Fast

SOT-227

MAJOR RATINGS AND CHARACTERISTICS

SYMBOL CHARACTERISTICS VALUES UNITS

61 A

TC57 °C

IFSM

50 Hz 300 A

60 Hz 310

I2t50 Hz 442 A2s

60 Hz 402

VRRM 600 V

TJ- 55 to 150 °C

VOLTAGE RATINGS

TYPE NUMBER VOLTAGE

CODE

VRRM, MAXIMUM

REPETITIVE PEAK

REVERSE VOLTAGE

VRSM, MAXIMUM

NON-REPETITIVE PEAK

REVERSE VOLTAGE

IRRM MAXIMUM

AT TJ MAXIMUM

SA61BA60 60 600 700 10

VS-SA61BA60

www.vishay.com Vishay Semiconductors

Revision: 29-Feb-12 2Document Number: 94688

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

FORWARD CONDUCTION

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum DC output current

at case temperature IO

Resistive or inductive load 61 A

57 °C

Maximum peak, one-cycle

non-repetitive forward current IFSM

t = 10 ms No voltage

reapplied

Initial TJ =

TJ maximum

300

t = 8.3 ms 310

t = 10 ms 100 % VRRM

reapplied

250

t = 8.3 ms 260

Maximum I2t for fusing I2t

t = 10 ms No voltage

reapplied

442

A2s

t = 8.3 ms 402

t = 10 ms 100 % VRRM

reapplied

313

t = 8.3 ms 284

Maximum I2t for fusing I2tI

2t for time tx = I2t x tx0.1  tx  10 ms, VRRM = 0 V 4.4 kA2s

Value of threshold voltage VF(TO) TJ maximum 0.914 V

Forward slope resistance rt10.5 m

Maximum forward voltage drop VFM

TJ = 25 °C, IFM = 30 Apk tp = 400 μs 1.33

VTJ = TJ maximum, IFM = 30 Apk 1.23

RMS isolation voltage base plate VINS f = 50 Hz, t = 1 s 3000

RECOVERY CHARACTERISTICS

PARAMETER SYMB

OL TEST CONDITIONS VALUES UNITS

Reverse recovery time, typical trr

TJ = 25 °C, IF = 20 A, VR = 30 V,

dIF/dt = 100 A/μs 170

TJ = 125 °C, IF = 20 A, VR = 30 V,

dIF/dt = 100 A/μs 250

Reverse recovery current,

typical Irr

TJ = 25 °C, IF = 20 A, VR = 30 V,

dIF/dt = 100 A/μs 10.5

TJ = 125 °C, IF = 20 A, VR = 30 V,

dIF/dt = 100 A/μs 16

Reverse recovery charge,

typical Qrr

TJ = 25 °C, IF = 20 A, VR = 30 V,

dIF/dt = 100 A/μs 900

TJ = 125 °C, IF = 20 A, VR = 30 V,

dIF/dt = 100 A/μs 1970

Snap factor, typical S TJ = 25 °C 0.6 -

Junction capacitance, typical CTVR = 600 V 67 pF

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Junction and storage

temperature range TJ, TStg - 55 to 150 °C

Maximum thermal resistance

junction to case per bridge RthJC 0.30

°C/W

Typical thermal resistance,

case to heatsink per module RthCS Mounting surface, smooth, flat and greased 0.05

Approximate weight 30 g

Mounting torque ± 10 % Bridge to heatsink 1.3 Nm

Case style SOT-227

IFM trr

dIR

dt IRM(REC)

Qrr

VS-SA61BA60

www.vishay.com Vishay Semiconductors

Revision: 29-Feb-12 3Document Number: 94688

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Fig. 1 - Typical Forward Voltage Drop Characteristics

Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage

Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage

Fig. 4 - Current Rating Characteristics

Fig. 5 - Forward Power Loss Characteristics

VFM - Forward Voltage Drop (V)

IF - Instantaneous Forward Current (A)

100

1000

0 0.5 1 1.5 2 2.5 3 3.5

TJ = 150 °C

TJ = 25 °C

TJ = 125 °C

VR - Reverse Voltage (V)

- Reverse Current (μA)

0.1

100

1000

10 000

0 100 200 300 400 500 600

TJ = 150 °C

TJ = 125 °C

TJ = 25 °C

VR - Reverse Voltage (V)

C T - Junction Capacitance (pF)

100

1000

10 100 1000

F(AV)

Average

Forward Current (A)

Average Power Loss (W)

100

120

140

160

180

200

220

0 10 20 30 40 50 60

180˚

(Sine)

180˚

(Rect)

IF(AV) - Average Forward Current (A)

Allowable Case Temperature (°C)

100

110

120

130

140

150

0 10 20 30 40 50 60 70

180˚

(Rect)

180˚

(Sine)

VS-SA61BA60

www.vishay.com Vishay Semiconductors

Revision: 29-Feb-12 4Document Number: 94688

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Fig. 6 - Typical Forward Voltage Drop Characteristics

Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt

Fig. 8 - Typical Stored Charge vs. dIF/dt

Fig. 9 - Typical Reverse Recovery Current vs. dIF/dt

thJC - Thermal Impedance (°C/W)

tp - Square Wave Pulse Duration (μs)

0 .01

0.1

0.00001 0.0001 0.001 0.01 0.1 1

Single Pulse

(Thermal Resistance)

D = 0.50

D = 0.20

D = 0.10

D = 0.05

D = 0.02

D = 0.01 2

Notes:

1. Duty factor D = t1/ t2

2. Peak TJ = Pdm x ZthJC + Tc

trr (ns)

dIF/dt (A/μs)

100

150

200

250

300

100 1000

IF = 30 A

IF = 20 A IF = 10 A

VR = 30 V

125 °C

25 °C

(nC)

/dt (A/μs)

125 °C

500

1000

1500

2000

2500

3000

3500

4000

100 1000

25 °C

IF = 30 A

IF = 20 A

IF = 10 A

VR = 30 V

dIF/dt (A/μs)

IRR (A)

100 1000

IF = 30 A

IF = 20 A

IF = 10 A

VR = 30 V

125 °C

25 °C

VS-SA61BA60

www.vishay.com Vishay Semiconductors

Revision: 29-Feb-12 5Document Number: 94688

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Fig. 10 - Reverse Recovery Parameter Test Circuit

Fig. 11 - Reverse Recovery Waveform and Definitions

IRFP250

D.U.T.

L = 70 μH

= 200 V

0.01 Ω

dIF/dt

adjust

0.5 I

RRM

(rec)M

/dt

0.75 I

RRM

/dt

(1)

(2)

(3)

(4)

(5)

(1) dIF/dt - rate of change of current

through zero crossing

(2) IRRM - peak reverse recovery current

(3) trr - reverse recovery time measured

from zero crossing point of negative

going IF to point where a line passing

through 0.75 IRRM and 0.50 IRRM

extrapolated to zero current.

(4) Qrr - area under curve dened by trr

and IRRM

trr x IRRM

Qrr =

(5) dI(rec)M/dt - peak rate of change of

current during tb portion of trr

VS-SA61BA60

www.vishay.com Vishay Semiconductors

Revision: 29-Feb-12 6Document Number: 94688

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

ORDERING INFORMATION TABLE

CIRCUIT CONFIGURATION

CIRCUIT CIRCUIT CONFIGURATION CODE CIRCUIT DRAWING

Single phase bridge B

- S = Fast recovery diode

- Vishay Semiconductors product

- A = Present Silicon Generation

- Current rating (61 = 61 A)

- Voltage rating (60 = 600 V)

- Circuit configuration:

B = Single phase bridge

- Package indicator:

A = SOT-227, standard insulated base

Device code

51 32 4 6 7

SVS- A 61 B A 60

Legal Disclaimer Notice

www.vishay.com Vishay

Revision: 02-Oct-12 1Document Number: 91000

Disclaimer

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE

RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,

“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other

disclosure relating to any product.

Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or

the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all

liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,

consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular

purpose, non-infringement and merchantability.

Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical

requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements

about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular

product with the properties described in the product specification is suitable for use in a particular application. Parameters

provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All

operating parameters, including typical parameters, must be validated for each customer application by the customer’s

technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,

including but not limited to the warranty expressed therein.

Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining

applications or for any other application in which the failure of the Vishay product could result in personal injury or death.

Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please

contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by

any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.

Material Category Policy

Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the

definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council

of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment

(EEE) - recast, unless otherwise specified as non-compliant.

Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that

all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.

Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free

requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference

to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21

conform to JEDEC JS709A standards.