1
Item Symbol Rating Unit Remarks
Drain-source voltage V DS 30
Continuous drain current ID±50
Pulsed drain current ID[puls] ±200
Gate-source peak voltage VGS ±16
Maximum avalanche energy EAV 520
Maximum power dissipation PD60
Operating and storage Tch +150
temperature range Tstg
2SK2687-01 FUJI POWER MOSFET
N-CHANNEL SILICON POWER MOSFET
Equivalent circuit schematic
Maximum ratings and characteristics
Absolute maximum ratings (Tc=25°C unless otherwise specified)
V
A
A
V
mJ
W
°C
°C
-55 to +150
FAP-IIIB SERIES
Electrical characteristics (Tc =25°C unless otherwise specified)
Thermal characteristics
Item Symbol
Zero gate voltage drain current IDSS
Min. Typ. Max. Units
V
V
µA
mA
nA
mΩ
mΩ
S
pF
ns
A
V
ns
µC
Min. Typ. Max. Units
Thermal resistance Rth(ch-c)
Rth(ch-a)
2.08
75.0 °C/W
°C/W
Symbol
V(BR)DSS
VGS(th)
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
IAV
VSD
trr
Qrr
Test Conditions
ID=1mA VGS=0V
ID=1mA VDS=VGS
VDS=30V VGS=0V Tch=25°C
Tch=125°C
VGS=±16V VDS=0V
ID=25A VGS=10V
ID=25A VDS=25V
VDS=25V
VGS=0V
f=1MHz
VCC=15V RG=10 Ω
ID=50A
VGS=10V
L=100µH Tch=25°C
IF=2xIDR VGS=0V Tch=25°C
IF=2xIDR VGS=0V
-di/dt=100A/µs Tch=25°C
30
1.0 1.5 2.0
10 500
0.2 1.0
10 100
12 17
7.5 10
22 45
2750 4130
1300 1950
600 900
13 20
55 83
180 270
150 230
50 1.14 1.71
85 130
0.17
Gate(G)
Source(S)
Drain(D)
Outline Drawings
Features
High speed switching
Low on-resistance
No secondary breakdown
Low driving power
High voltage
Avalanche-proof
Applications
Switching regulators
DC-DC converters
General purpose power amplifier
www.fujielectric.co.jp/fdt/scd
*1 L=0.277mH, Vcc=12V
Item
Drain-source breakdown voltage
Gate threshold voltage
Gate-source leakage current
Drain-source on-state resistance
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time
Turn-off time
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
TO-220AB
*1
VGS=4V
VGS=10V
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